CN103713346A - Aviation tail gas detection filter with central wavelength of 2700 nm - Google Patents
Aviation tail gas detection filter with central wavelength of 2700 nm Download PDFInfo
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- CN103713346A CN103713346A CN201310631477.5A CN201310631477A CN103713346A CN 103713346 A CN103713346 A CN 103713346A CN 201310631477 A CN201310631477 A CN 201310631477A CN 103713346 A CN103713346 A CN 103713346A
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Abstract
The invention designs an aviation tail gas detection filter with a central wavelength of 2700 nm, the aviation tail gas detection filter being high in measurement precision and capable of substantially increasing the signal-to-noise ratio. The aviation tail gas detection filter comprises a substrate taking Ge as the raw material, a first film coating layer made of Ge and SiO, and a second film coating layer made of Ge and SiO. The substrate is located between the first film coating layer and the second film coating layer. According to the aviation tail gas detection filter of the invention, the central wavelength of the filter is 2700 +/- 5 nm so that during the aviation tail gas detection process, the signal-to-noise ratio can be substantially increased and the measurement precision can be increased. Certain parameters of the filter are that: peak transmittance Tp >= 80%; bandwidth = 200 +/- 20 nm; and 1000-3500 nm (except the passband), Tavg < 0.5%.
Description
Technical field
The present invention relates to aviation tail gas gas and detect optical filter, the aviation tail gas gas of especially a kind of centre wavelength 2700nm detects optical filter.
Background technology
Infrared fileter filters, cut-off visible ray allows to pass through infrared ray simultaneously.Ultrared wavelength penetrates any object at an easy rate, and namely infrared ray can not reflect when through object.Utilize ultrared this characteristic, only allow long wavelength's infrared ray pass through, filtering short wavelength's ultraviolet ray and visible ray.Be applied to a lot of fields, the problem existing for the optical filter using in aviation tail gas gas testing process is at present that the signal to noise ratio (S/N ratio) of transmitance and cut-off region is not high, can not meet high-precision measurement requirement.
Summary of the invention
The object of the invention is to provide in order to solve the deficiency of above-mentioned technology that a kind of measuring accuracy is high, the aviation tail gas gas of the centre wavelength 2700nm that can greatly improve signal to noise ratio (S/N ratio) detects optical filter.
In order to achieve the above object, the aviation tail gas gas of the centre wavelength 2700nm that the present invention is designed detects optical filter, comprise and take Ge as raw-material substrate, with Ge, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 96nm thickness, the SiO layer of 304nm thickness, the Ge layer of 132nm thickness, the SiO layer of 159nm thickness, the Ge layer of 82nm thickness, the SiO layer of 338nm thickness, the Ge layer of 140nm thickness, the SiO layer of 339nm thickness, the Ge layer of 137nm thickness, the SiO layer of 349nm thickness, the Ge layer of 70nm thickness, the SiO layer of 169nm thickness, the Ge layer of 136nm thickness, the SiO layer of 343nm thickness, the Ge layer of 149nm thickness, the SiO layer of 473nm thickness, the Ge layer of 232nm thickness, the SiO layer of 668nm thickness, the Ge layer of 103nm thickness and the SiO layer of 226nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of 178nm thickness, the SiO layer of 166nm thickness, the Ge layer of 92nm thickness, the Ge layer of the SiO layer of 222nm thickness, 102nm thickness, the Ge layer of the SiO layer of 277nm thickness, 135nm thickness, the Ge layer of the SiO layer of 150nm thickness, 55nm thickness and the SiO layer of 150nm thickness.
Thickness corresponding to above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Conventionally the tolerance of thickness is in 10nm left and right.
The aviation tail gas gas of the resulting centre wavelength 2700nm of the present invention detects optical filter, its centre wavelength 2700 ± 5nm, and it,, in aviation tail gas gas testing process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree.Peak transmittance Tp >=80% of this optical filter, bandwidth=200 ± 20nm, 1000~3500nm(is except passband), Tavg<0.5%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram;
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
Embodiment
Below by embodiment, the invention will be further described by reference to the accompanying drawings.
Embodiment 1:
As Fig. 1, shown in Fig. 2, the aviation tail gas gas of the centre wavelength 2700nm that the present embodiment is described detects optical filter, comprise and take Ge as raw-material substrate 2, with Ge, SiO is the first filming layer 1 and with Ge, SiO is the second film plating layer 3, and described substrate 2 is between the first filming layer 1 and the second film plating layer 3, described the first filming layer 1 is arranged in order and includes from inside to outside: the Ge layer of 96nm thickness, the SiO layer of 304nm thickness, the Ge layer of 132nm thickness, the SiO layer of 159nm thickness, the Ge layer of 82nm thickness, the SiO layer of 338nm thickness, the Ge layer of 140nm thickness, the SiO layer of 339nm thickness, the Ge layer of 137nm thickness, the SiO layer of 349nm thickness, the Ge layer of 70nm thickness, the SiO layer of 169nm thickness, the Ge layer of 136nm thickness, the SiO layer of 343nm thickness, the Ge layer of 149nm thickness, the SiO layer of 473nm thickness, the Ge layer of 232nm thickness, the SiO layer of 668nm thickness, the Ge layer of 103nm thickness and the SiO layer of 226nm thickness, described the second film plating layer 3 is arranged in order and includes from inside to outside: the Ge layer of 178nm thickness, the SiO layer of 166nm thickness, the Ge layer of 92nm thickness, the Ge layer of the SiO layer of 222nm thickness, 102nm thickness, the Ge layer of the SiO layer of 277nm thickness, 135nm thickness, the Ge layer of the SiO layer of 150nm thickness, 55nm thickness and the SiO layer of 150nm thickness.
Claims (1)
1. the aviation tail gas gas of a centre wavelength 2700nm detects optical filter, comprise and take Ge as raw-material substrate, with Ge, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, it is characterized in that: described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 96nm thickness, the SiO layer of 304nm thickness, the Ge layer of 132nm thickness, the SiO layer of 159nm thickness, the Ge layer of 82nm thickness, the SiO layer of 338nm thickness, the Ge layer of 140nm thickness, the SiO layer of 339nm thickness, the Ge layer of 137nm thickness, the SiO layer of 349nm thickness, the Ge layer of 70nm thickness, the SiO layer of 169nm thickness, the Ge layer of 136nm thickness, the SiO layer of 343nm thickness, the Ge layer of 149nm thickness, the SiO layer of 473nm thickness, the Ge layer of 232nm thickness, the SiO layer of 668nm thickness, the Ge layer of 103nm thickness and the SiO layer of 226nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of 178nm thickness, the SiO layer of 166nm thickness, the Ge layer of 92nm thickness, the Ge layer of the SiO layer of 222nm thickness, 102nm thickness, the Ge layer of the SiO layer of 277nm thickness, 135nm thickness, the Ge layer of the SiO layer of 150nm thickness, 55nm thickness and the SiO layer of 150nm thickness.
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CN201310631477.5A CN103713346B (en) | 2013-11-29 | 2013-11-29 | The aviation exhaust gas of centre wavelength 2700nm detects optical filter |
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CN201310631477.5A CN103713346B (en) | 2013-11-29 | 2013-11-29 | The aviation exhaust gas of centre wavelength 2700nm detects optical filter |
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CN103713346A true CN103713346A (en) | 2014-04-09 |
CN103713346B CN103713346B (en) | 2016-02-10 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4158133A (en) * | 1976-08-20 | 1979-06-12 | Siemens Aktiengesellschaft | Filters for photo-detectors |
US20040207920A1 (en) * | 2003-04-15 | 2004-10-21 | Alps Electric Co., Ltd | Multilayer optical filter and optical component |
WO2010025536A1 (en) * | 2008-09-08 | 2010-03-11 | National Research Council Of Canada | Thin film optical filters with an integral air layer |
CN102590917A (en) * | 2012-03-12 | 2012-07-18 | 杭州麦乐克电子科技有限公司 | Infrared filter with broadband of 3.65 to 5 microns, and manufacturing method for infrared filter |
CN203551825U (en) * | 2013-11-29 | 2014-04-16 | 杭州麦乐克电子科技有限公司 | Aviation tail gas detection optical filter with central wavelength of 2700 nm |
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2013
- 2013-11-29 CN CN201310631477.5A patent/CN103713346B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4158133A (en) * | 1976-08-20 | 1979-06-12 | Siemens Aktiengesellschaft | Filters for photo-detectors |
US20040207920A1 (en) * | 2003-04-15 | 2004-10-21 | Alps Electric Co., Ltd | Multilayer optical filter and optical component |
WO2010025536A1 (en) * | 2008-09-08 | 2010-03-11 | National Research Council Of Canada | Thin film optical filters with an integral air layer |
CN102590917A (en) * | 2012-03-12 | 2012-07-18 | 杭州麦乐克电子科技有限公司 | Infrared filter with broadband of 3.65 to 5 microns, and manufacturing method for infrared filter |
CN203551825U (en) * | 2013-11-29 | 2014-04-16 | 杭州麦乐克电子科技有限公司 | Aviation tail gas detection optical filter with central wavelength of 2700 nm |
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Address after: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee after: Hangzhou Mai peak Polytron Technologies Inc Address before: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee before: Multi IR Optoelectronics Co., Ltd. |