CN103628042A - 一种改善晶硅电池镀膜质量的方法 - Google Patents
一种改善晶硅电池镀膜质量的方法 Download PDFInfo
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- CN103628042A CN103628042A CN201310671374.1A CN201310671374A CN103628042A CN 103628042 A CN103628042 A CN 103628042A CN 201310671374 A CN201310671374 A CN 201310671374A CN 103628042 A CN103628042 A CN 103628042A
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- temperature
- tube furnace
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- arcing
- deposition
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000007888 film coating Substances 0.000 title abstract description 4
- 238000009501 film coating Methods 0.000 title abstract description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 44
- 239000010439 graphite Substances 0.000 claims abstract description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 18
- 230000008021 deposition Effects 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims description 29
- 239000006117 anti-reflective coating Substances 0.000 claims description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000001816 cooling Methods 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 230000008569 process Effects 0.000 description 9
- 230000004075 alteration Effects 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical Vapour Deposition (AREA)
Abstract
Description
取片格数 | Uoc/V | Isc/A | Rs/Ω | FF/% | Efficiency/% |
1,2 | 0.6265 | 8.5244 | 0.00306 | 78.316 | 17.188 |
5,6 | 0.6269 | 8.5072 | 0.00302 | 78.399 | 17.182 |
9,10 | 0.6268 | 8.4844 | 0.00300 | 78.353 | 17.123 |
工艺 | 膜厚极差 | 折射率极差 | 色差返工 | 效率 |
专利工艺 | 1.5nm | 0.020 | 0.17% | 17.305% |
常规工艺 | 4.0nm | 0.035 | 0.23% | 17.282% |
Claims (9)
Priority Applications (1)
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CN201310671374.1A CN103628042B (zh) | 2013-12-10 | 2013-12-10 | 一种改善晶硅电池镀膜质量的方法 |
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CN201310671374.1A CN103628042B (zh) | 2013-12-10 | 2013-12-10 | 一种改善晶硅电池镀膜质量的方法 |
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Publication Number | Publication Date |
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CN103628042A true CN103628042A (zh) | 2014-03-12 |
CN103628042B CN103628042B (zh) | 2016-04-27 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108183149A (zh) * | 2017-12-27 | 2018-06-19 | 安徽银欣新能源科技有限公司 | 一种太阳能电池片的生产方法 |
CN109084693A (zh) * | 2018-07-20 | 2018-12-25 | 东莞富亚电子有限公司 | 彩色图像测膜厚法 |
CN113481488A (zh) * | 2021-07-23 | 2021-10-08 | 常州时创能源股份有限公司 | Pecvd管式设备的补镀判断方法 |
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CN102598158A (zh) * | 2009-10-30 | 2012-07-18 | 住友化学株式会社 | 层叠膜的制造方法 |
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CN102983211A (zh) * | 2012-10-22 | 2013-03-20 | 江苏晨电太阳能光电科技有限公司 | 一种制备用于多晶硅太阳能电池的三层减反射膜的方法 |
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2013
- 2013-12-10 CN CN201310671374.1A patent/CN103628042B/zh active Active
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KR930010126B1 (ko) * | 1990-09-29 | 1993-10-14 | 주식회사 금성사 | 단결정 실리콘 확산 태양전지의 제조방법 |
JP2000269133A (ja) * | 1999-03-16 | 2000-09-29 | Seiko Epson Corp | 薄膜半導体装置の製造方法 |
KR20030034304A (ko) * | 2001-10-22 | 2003-05-09 | 김형준 | 탄화규소 박막증착방법 및 장치 |
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CN102598158A (zh) * | 2009-10-30 | 2012-07-18 | 住友化学株式会社 | 层叠膜的制造方法 |
CN102769069A (zh) * | 2012-07-16 | 2012-11-07 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池的硼扩散方法 |
CN102983211A (zh) * | 2012-10-22 | 2013-03-20 | 江苏晨电太阳能光电科技有限公司 | 一种制备用于多晶硅太阳能电池的三层减反射膜的方法 |
CN102969398A (zh) * | 2012-11-20 | 2013-03-13 | 宁波尤利卡太阳能科技发展有限公司 | 背面钝化晶体硅太阳能电池的制备方法 |
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刘长友等: "ZnSe多晶料预处理原理与方法", 《材料导报》 * |
吕伟等: "二维纳米结构――氧化铋纳米片的制备与表征", 《山东大学学报(工学版)》 * |
赵柏儒等: "溅射Nb-Ge膜中高T_cA15相的形成规律", 《中国科学A辑》 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108183149A (zh) * | 2017-12-27 | 2018-06-19 | 安徽银欣新能源科技有限公司 | 一种太阳能电池片的生产方法 |
CN109084693A (zh) * | 2018-07-20 | 2018-12-25 | 东莞富亚电子有限公司 | 彩色图像测膜厚法 |
CN113481488A (zh) * | 2021-07-23 | 2021-10-08 | 常州时创能源股份有限公司 | Pecvd管式设备的补镀判断方法 |
CN113481488B (zh) * | 2021-07-23 | 2023-01-03 | 常州时创能源股份有限公司 | Pecvd管式设备的补镀判断方法 |
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Inventor after: Xu Hongzheng Inventor after: Li Xiu Inventor after: Lu Yurong Inventor after: Jiang Qianshao Inventor after: Huang Haiyan Inventor after: Lu Chuan Inventor before: Li Xiu Inventor before: Lu Yurong Inventor before: Jiang Qianshao Inventor before: Huang Haiyan Inventor before: Lu Chuan |
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Free format text: CORRECT: INVENTOR; FROM: LI XIU LU YURONG JIANG QIANSHAO HUANG HAIYAN LU CHUAN TO: XU HONGZHENG LI XIU LU YURONG JIANG QIANSHAO HUANG HAIYAN LU CHUAN |
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Effective date of registration: 20220602 Address after: 314417 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province Patentee after: Zhengtai Xinneng Technology Co.,Ltd. Address before: 310053 No. 1335 Bin'an Road, Binjiang District, Hangzhou City, Zhejiang Province Patentee before: CHINT SOLAR (ZHEJIANG) Co.,Ltd. |
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Address after: 314417 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province Patentee after: Zhengtai Xinneng Technology Co.,Ltd. Address before: 314417 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province Patentee before: Zhengtai Xinneng Technology Co.,Ltd. |