CN103603048B - 一种用于生产碳化硅外延片的化学气相沉积设备 - Google Patents
一种用于生产碳化硅外延片的化学气相沉积设备 Download PDFInfo
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- CN103603048B CN103603048B CN201310279780.3A CN201310279780A CN103603048B CN 103603048 B CN103603048 B CN 103603048B CN 201310279780 A CN201310279780 A CN 201310279780A CN 103603048 B CN103603048 B CN 103603048B
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Description
Point | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 均匀性 | mean | 标准偏差 |
传统 | 7.86 | 7.81 | 7.8 | 7.75 | 7.74 | 7.68 | 7.65 | 7.57 | 7.5 | 7.41 | 2.95% | 7.677 | 0.145 |
实施例1 | 7.87 | 7.86 | 7.84 | 7.81 | 7.79 | 7.76 | 7.71 | 7.7 | 7.69 | 7.69 | 1.16% | 7.772 | 0.072 |
实施例2 | 7.88 | 7.87 | 7.84 | 7.82 | 7.78 | 7.75 | 7.69 | 7.67 | 7.66 | 7.66 | 1.42% | 7.762 | 0.088 |
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CN103603048B true CN103603048B (zh) | 2016-08-10 |
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CN109402604A (zh) * | 2019-01-05 | 2019-03-01 | 泰科天润半导体科技(北京)有限公司 | 一种用于生产碳化硅外延片的化学气相沉积装置 |
CN113173799B (zh) * | 2021-04-28 | 2022-05-10 | 嵊州市西格玛科技有限公司 | 一种碳/碳复合材料生产系统及方法 |
CN113235067A (zh) * | 2021-04-28 | 2021-08-10 | 嵊州市西格玛科技有限公司 | 一种碳复合材料生产用气相沉积系统及方法 |
CN115558905B (zh) * | 2022-12-01 | 2023-07-07 | 浙江晶越半导体有限公司 | 一种提高碳化硅沉积速率与均匀性的方法与反应器 |
CN115613139B (zh) * | 2022-12-01 | 2023-04-14 | 浙江晶越半导体有限公司 | 用于外延生长碳化硅薄膜的化学气相沉积反应器及方法 |
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CN102644106A (zh) * | 2012-04-24 | 2012-08-22 | 浙江金瑞泓科技股份有限公司 | 一种单片炉外延层厚度均匀性生长的控制方法 |
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CN203474963U (zh) * | 2013-07-04 | 2014-03-12 | 国家电网公司 | 一种用于生产碳化硅外延片的化学气相沉积设备 |
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CN102644106A (zh) * | 2012-04-24 | 2012-08-22 | 浙江金瑞泓科技股份有限公司 | 一种单片炉外延层厚度均匀性生长的控制方法 |
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Address after: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Co-patentee after: GLOBAL ENERGY INTERCONNECTION Research Institute Patentee after: State Grid Corporation of China Address before: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Co-patentee before: STATE GRID SMART GRID Research Institute Patentee before: State Grid Corporation of China |
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