CN103578919A - 一种mos器件的钝化层形成方法以及一种mos器件 - Google Patents

一种mos器件的钝化层形成方法以及一种mos器件 Download PDF

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CN103578919A
CN103578919A CN201210260811.6A CN201210260811A CN103578919A CN 103578919 A CN103578919 A CN 103578919A CN 201210260811 A CN201210260811 A CN 201210260811A CN 103578919 A CN103578919 A CN 103578919A
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psg
dusts
teos
thickness
mos device
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王者伟
陈雪磊
高留春
刘斌斌
赵宏星
黄国民
焦骥斌
蒋龙
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CSMC Technologies Corp
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CSMC Technologies Corp
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Priority to CN201210260811.6A priority Critical patent/CN103578919A/zh
Priority to PCT/CN2013/080149 priority patent/WO2014015820A1/zh
Priority to US14/412,445 priority patent/US9559032B2/en
Priority to EP13822224.5A priority patent/EP2879172A4/en
Publication of CN103578919A publication Critical patent/CN103578919A/zh
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Abstract

本发明提供一种MOS器件的钝化层形成方法以及一种MOS器件。所述MOS器件的钝化层形成方法包括：形成衬底；在衬底上形成介质；图案化介质以露出部分衬底；在露出的衬底部分和介质上形成金属；在金属上形成正硅酸乙酯TEOS；在TEOS上形成磷硅玻璃PSG；以及在PSG上形成氮氧化合物。利用本发明，可以改善钝化层开裂的问题。

Description

一种MOS器件的钝化层形成方法以及一种MOS器件
技术领域
本发明属于半导体器件制造领域，尤其涉及一种MOS器件的钝化层形成方法以及一种MOS器件。
背景技术
如图1所示，示出了现有技术的DMOS产品的结构。该DMOS产品包括衬底1、介质2、金属3和钝化层4。其中该钝化层4为10000埃的氮化硅层。
通常，高压DMOS产品需要做HTRB测试（高温/反向高压可靠性测试）和HTGB测试（高温高压（栅极）可靠性测试），因其应用不同，其要求也不同。一些低端产品只要求通过168小时的测试，而一些高端产品则需要通过1000小时的测试。在实际生产中发现，很多产品在500小时以上的考核中，由于在进行盐酸浸泡（即针孔实验）后，有大量的铝被侵蚀，钝化层4存在开裂现象，从而很容易发生漏电问题。
发明内容
有鉴于此，本发明需要提供一种新的钝化层形成方法和MOS器件，以改善钝化层开裂问题。
本发明提供了一种MOS器件的钝化层形成方法，所述方法包括：
形成衬底；
在衬底上形成介质；
图案化介质以露出部分衬底；
在露出的衬底部分和介质上形成金属；
在金属上形成正硅酸乙酯TEOS；
在TEOS上形成磷硅玻璃PSG；以及
在PSG上形成氮硅化合物。
优选地，在本发明的上述方法中，所述TEOS的厚度为9000埃-11000埃，所述PSG的厚度为2700埃-3300埃，所述氮硅化合物可为SiON，所述SiON的厚度为2700埃-3300埃，另外，所述氮硅化合物还可为SiN。
优选地，在本发明的上述方法中，所述TEOS的厚度为10000埃，所述PSG的厚度为3000埃，所述SiON的厚度为3000埃。
优选地，在本发明的上述方法中，以化学气相淀积方式形成TEOS、PSG、SiON或TEOS、PSG、SiN。
优选地，在本发明的上述方法中，所述MOS器件为CMOS器件或DMOS器件。
本发明还提供一种MOS器件，所述MOS器件包括衬底、形成在部分衬底上的介质、形成在介质和衬底上的金属以及形成在金属上的钝化层，其中所述钝化层包括：
形成在金属上的正硅酸乙酯TEOS；
形成在TEOS上的磷硅玻璃PSG；以及
形成在PSG上的氮硅化合物。
优选地，在本发明的上述MOS器件中，所述TEOS的厚度为9000埃-11000埃，所述PSG的厚度为2700埃-3300埃，所述氮硅化合物可为SiON，所述SiON的厚度为2700埃-3300埃，另外，所述氮硅化合物还可为SiN。
优选地，在本发明的上述MOS器件中，所述TEOS的厚度为10000埃，所述PSG的厚度为3000埃，所述SiON的厚度为3000埃。
优选地，在本发明的上述MOS器件中，以化学气相淀积方式形成TEOS、PSG、SiON或TEOS、PSG、SiN。
优选地，在本发明的上述MOS器件中，所述MOS器件为CMOS器件或DMOS器件。
利用本发明，由于底层的TEOS和PSG可以有效缓解顶层的应力，同时顶层氮氧化硅的应力比原来的氮化硅应力小，从而有效改善钝化层开裂问题。
利用本发明，可以有效降低产品报废率，提高生成效率。
附图说明
图1为根据现有技术的DMOS产品的结构示意图；
图2为根据本发明的示意性实施例的MOS器件的钝化层形成方法；以及
图3为根据本发明的示意性实施例的MOS器件的结构示意图。
具体实施方式
下面将结合附图详细描述本发明的优选实施例，在附图中相同的参考标号表示相同的元件。
图2为根据本发明的示意性实施例的MOS器件的钝化层形成方法。如图所示，该方法包括以下步骤：
S1:形成衬底。衬底可以例如为<100晶向>，电阻15~25欧姆的单晶硅。
S2:在衬底上形成介质。介质可以例如为氧化层，例如为氧化硅层。
S3:图案化介质以露出部分衬底。
S4:在露出的衬底部分和介质上形成金属。金属可以例如为铝。
S5:在金属上形成正硅酸乙酯TEOS。优选地，TEOS的厚度为9000埃-11000埃。更优选地，TEOS的厚度为10000埃。
S6:在TEOS上形成磷硅玻璃PSG。优选地，PSG的厚度为2700埃-3300埃。更优选地，PSG的厚度为3000埃。
S7:在PSG上形成氮硅化合物。优选地，SiON的厚度为3000埃。更优选地，SiON的厚度为3000埃。另外，SiON可用SiN替换。
优选地，以化学气相淀积方式形成TEOS、PSG、SiON。
优选地，上述MOS器件为CMOS器件或DMOS器件。
图3为根据本发明的示意性实施例的MOS器件的结构示意图。在形成钝化层过程的氮氧化合物可为SiON或SiN等，下面实施例中氮氧化合物仅以SiON为例，如图所示，MOS器件包括衬底1、形成在部分衬底上的介质2、形成在介质和衬底上的金属3以及形成在金属上的钝化层4’，其中所述钝化层4’包括：
形成在金属3上的正硅酸乙酯TEOS 41；
形成在TEOS 41上的磷硅玻璃PSG 42；以及
形成在PSG 42上的氮氧化硅SiON 43。
优选地，TEOS 41的厚度为9000埃-11000埃，PSG 42的厚度为2700埃-3300埃，SiON 43的厚度为2700埃-3300埃。
更优选地，TEOS 41的厚度为10000埃，PSG 42的厚度为3000埃，SiON 43的厚度为3000埃。
优选地，以化学气相淀积方式形成TEOS 41、PSG 42、SiON 43。
优选地，上述MOS器件可以为CMOS器件或DMOS器件。
鉴于这些教导，熟悉本领域的技术人员将容易想到本发明的其它实施例、组合和修改。因此，当结合上述说明和附图进行阅读时，本发明仅仅由权利要求限定。

Claims (10)

1.一种MOS器件的钝化层形成方法，其特征在于，所述方法包括：
形成衬底；
在衬底上形成介质；
图案化介质以露出部分衬底；
在露出的衬底部分和介质上形成金属；
在金属上形成正硅酸乙酯TEOS；
在TEOS上形成磷硅玻璃PSG；以及
在PSG上形成氮氧化合物。
2.如权利要求1所述的方法，其特征在于，所述TEOS的厚度为9000埃-11000埃，所述PSG的厚度为2700埃-3300埃，所述氮硅化合物可为SiON，所述SiON的厚度为2700埃-3300埃，另外，所述氮硅化合物还可为SiN。
3.如权利要求2所述的方法，其特征在于，所述TEOS的厚度为10000埃，所述PSG的厚度为3000埃，所述SiON的厚度为3000埃。
4.如权利要求1-3之一所述的方法，其特征在于，以化学气相淀积方式形成TEOS、PSG、SiON或TEOS、PSG、SiN。
5.如权利要求1-3之一所述的方法，其特征在于，所述MOS器件为CMOS器件或DMOS器件。
6.一种MOS器件，其特征在于，所述MOS器件包括衬底、形成在部分衬底上的介质、形成在介质和衬底上的金属以及形成在金属上的钝化层，其中所述钝化层包括：
形成在金属上的正硅酸乙酯TEOS；
形成在TEOS上的磷硅玻璃PSG；以及
形成在PSG上的氮硅化合物。
7.如权利要求6所述的MOS器件，其特征在于，所述TEOS的厚度为9000埃-11000埃，所述PSG的厚度为2700埃-3300埃，所述氮硅化合物可为SiON，所述SiON的厚度为2700埃-3300埃，另外，所述氮硅化合物还可为SiN。
8.如权利要求7所述的MOS器件，其特征在于，所述TEOS的厚度为10000埃，所述PSG的厚度为3000埃，所述SiON的厚度为3000埃。
9.如权利要求6-8之一所述的MOS器件，其特征在于，以化学气相淀积方式形成TEOS、PSG、SiON或TEOS、PSG、SiN。
10.如权利要求6-8之一所述的MOS器件，其特征在于，所述MOS器件为CMOS器件或DMOS器件。
CN201210260811.6A 2012-07-26 2012-07-26 一种mos器件的钝化层形成方法以及一种mos器件 Pending CN103578919A (zh)

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