CN103531675A - Led 的制造方法 - Google Patents
Led 的制造方法 Download PDFInfo
- Publication number
- CN103531675A CN103531675A CN201310269366.4A CN201310269366A CN103531675A CN 103531675 A CN103531675 A CN 103531675A CN 201310269366 A CN201310269366 A CN 201310269366A CN 103531675 A CN103531675 A CN 103531675A
- Authority
- CN
- China
- Prior art keywords
- led wafer
- led
- reflector
- substrate
- thermal endurance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 34
- 239000010410 layer Substances 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 description 69
- 238000005520 cutting process Methods 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000004821 Contact adhesive Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000004604 Blowing Agent Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000004062 sedimentation Methods 0.000 description 5
- 229910005540 GaP Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002148 esters Chemical group 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229920005575 poly(amic acid) Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 239000004088 foaming agent Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- -1 gallium nitride series compound Chemical class 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 150000003349 semicarbazides Chemical class 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- PXIPVTKHYLBLMZ-UHFFFAOYSA-N sodium azide Substances [Na+].[N-]=[N+]=[N-] PXIPVTKHYLBLMZ-UHFFFAOYSA-N 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
本发明提供一种LED的制造方法，根据本发明的实施方式的LED的制造方法包括：在LED晶圆的基板的外侧形成反射层，所述LED晶圆包括所述基板和在所述基板的一面上的发光元件；以及在形成反射层之前，将耐热性压敏粘合片贴附到所述发光元件的外侧。
Description
本申请要求2012年6月28日提交的日本专利申请No.2012-145450的优先权，该日本专利申请的内容通过引用合并于此。
技术领域
本发明涉及一种LED的制造方法。
背景技术
通常，LED包括基板和形成在基板上的发光元件。为了提高亮度，在一些情况中，LED包括形成在基板的发光元件相反侧的面上的反射层（例如，日本特开2001-085746号公报）。例如，通过诸如MOCVD法和离子辅助电子束沉积法等气相沉积法形成反射层。在使用MOCVD方法的情况中，在LED晶圆以反射层形成侧向上（也就是，基板的外侧向上）的方式放置在工作台上之后，基板的外侧面经受气相沉积处理。此外，在使用离子辅助电子束沉积法的情况中，LED晶圆在反射层形成侧的相反侧（也就是，发光元件侧）覆盖有盖，并且露出反射层形成面（也就是，基板的外侧面）。露出的面经受气相沉积处理。然而，在这种传统的制造方法中，可能发生如下问题。金属进入到LED晶圆的反射层形成面的相反侧的面（也就是，发光元件侧的面）和工作台或盖之间的空隙，因而在发光元件的外侧还形成金属层。因而，LED的亮度受到负面地影响。当待形成反射层的LED晶圆翘曲时以及当LED晶圆在反射层形成期间翘曲时，这个问题变得更显著。
发明内容
已经做出本发明以解决上述传统的问题，并且本发明的目的在于提供一种LED的制造方法，该方法能够防止在发光元件的外侧形成金属层。
根据本发明的实施方式的LED的制造方法包括：
在LED晶圆的基板的外侧形成反射层，所述LED晶圆包括所述基板和在所述基板的一面上的发光元件；以及
在形成反射层之前，将耐热性压敏粘合片贴附到所述发光元件的外侧。
在本发明的实施方式中，所述耐热性压敏粘合片包括硬质基体构件和压敏粘合层。
根据本发明，上述方法包括：在LED晶圆的基板的外侧形成反射层，LED晶圆包括基板和在基板的一面上的发光元件。在形成反射层之前，耐热性压敏粘合片贴附到发光元件的外侧。采用这种方式，可以防止在发光元件的外侧形成金属层。此外，耐热性压敏粘合片还具有保护LED晶圆的功能，因此根据本发明，在形成反射层前后，可以防止LED晶圆受到损伤以高产量地制造LED。
附图说明
在附图中：
图1是在根据本发明的实施方式的LED的制造方法中使用的LED晶圆的示意性截面图；
图2的A至图2的C是示出根据本发明的实施方式的LED的制造方法中的反射层形成步骤的示意图；
图3A至图3D是示出根据本发明的实施方式的LED的制造方法中的各步骤的示意图；以及
图4A至图4G是示出根据本发明的另一实施方式的LED的制造方法中的各步骤的示意图。
具体实施方式
A.LED晶圆
在本发明的制造方法中，在预处理中已经适当地处理的LED晶圆经受反射层形成步骤。图1是待经受反射层形成步骤的LED晶圆的示意性截面图。 LED晶圆10包括基板11和发光元件12。基板11由任意适当的材料制成。用于构成基板11的材料的示例包括：蓝宝石、SiC、GaAs、GaN和GaP。注意，基板11优选地被研磨（背面研磨）以薄化成任意适当的厚度。基板11的厚度优选地是10μm至500μm，更优选地是50μm至300μm，最优选地是80μm至150μm。发光元件12包括缓冲层1、n型半导体层2、发光层3、p型半导体层4、透明电极5和电极6、7。发光层3包括：例如，氮化镓系化合物（例如，GaN、AlGaN和InGaN）、磷化镓系化合物（例如，GaP和GaAsP）、砷化镓系化合物（例如，GaAs、AlGaAs和AlGaInP）和氧化锌（ZnO）系化合物。注意，尽管未示出，但是发光元件12可以包括任意其它适当的构件。
B.反射层形成步骤
图2的A至图2的C是示出根据本发明的实施方式的LED的制造方法中的反射层形成步骤的示意图。图2的A至图2的C示出了作为代表性示例的实施方式，在该实施方式中，通过金属有机化学气相沉积法（MOCVD法）在LED晶圆的基板的外侧形成反射层。在本发明的LED的制造方法中，贴附有耐热性压敏粘合片20的LED晶圆10经受反射层形成步骤（图2的A）。此时，耐热性压敏粘合片20贴附到LED晶圆10的发光元件12侧。
只要可以得到本发明的效果，可以使用任意适当的压敏粘合片作为耐热性压敏粘合片20。优选地使用如下耐热性压敏粘合片：即使在后续处理的反射层形成步骤中的气相沉积处理时该耐热性压敏粘合片暴露在高温（例如，135°C至200°C）下时，该耐热性压敏粘合片不会熔融和产生气体，并且可维持其粘合性。
耐热性压敏粘合片20包括：例如，基体构件和压敏粘合层。可以在基体构件的一面上设置压敏粘合层，或者可以在基体构件的两面的每一面上设置压敏粘合层。
只要可以得到本发明的效果，可以使用任意适当的材料作为用于构成基体构件的材料。用于构成基体构件的材料的示例包括诸如聚酰亚胺和聚萘二甲酸乙二醇酯等树脂。利用这种树脂，可得到耐热性能优异的耐热性压敏粘 合片。
当基体构件由树脂制成时，基体构件的厚度优选地是10μm至1000μm，更优选地是25μm至700μm。
根据本实施方式，基体构件是硬质基体构件。在本说明书中，硬质基体构件是指由25°C下的杨氏模量为70GPa或更高的无机材料制成的基体构件。利用包括硬质基体构件的耐热性压敏粘合片，可在LED晶圆的翘曲被矫正之后进行反射层形成步骤，此外，可防止在反射层形成步骤期间发生翘曲。结果，本发明的效果（即防止在发光元件12的外侧形成金属层）变得更显著。
作为用于构成硬质基体构件的材料，可以采用，例如：硅、玻璃、诸如不锈钢等金属和陶瓷。
当基体构件是硬质基体构件时，硬质基体构件的厚度优选地是0.2mm至50mm，更优选地是0.3mm至10mm。
可以使用任意适当的压敏粘合剂作为构成压敏粘合层的压敏粘合剂。优选地使用如下的压敏粘合剂：该压敏粘合剂即使在气相沉积时的高温（例如，135°C至200°C）下也不会熔融和产生气体，并且可维持其粘合性。此外，优选地，该压敏粘合剂甚至在加热之后剥离而不残留粘合剂。压敏粘合剂的示例包括：丙烯酸系压敏粘合剂、硅酮系压敏粘合剂和聚酰亚胺系压敏粘合剂。聚酰亚胺系压敏粘合剂的示例包括通过将聚酰胺酸进行酰亚胺化得到，聚酰胺酸是通过酸酐和具有酯结构的二胺的反应得到的。优选地，当聚酰胺酸与具有酯结构的二胺反应时，具有酯结构的二胺的混合率相对于酸酐的100重量部分是5重量部分至90重量部分。
此外，可以向压敏粘合层添加发泡剂。添加有发泡剂的压敏粘合层通过加热显示剥离特性。具体地，在添加有发泡剂的压敏粘合层中，通过加热使发泡剂发泡或膨胀，因而粘合性降低或者消失。包括这种压敏粘合层的耐热性压敏粘合片可被紧密地粘合到LED晶圆，并且当从LED晶圆去除该耐热性压敏粘合片时可容易地剥离该耐热性压敏粘合片。利用这种耐热性压敏粘合片，能够显著地防止在剥离耐热性压敏粘合片期间LED晶圆受到损伤。此外， 可简单地设计自动化步骤。可以使用任意适当的发泡剂作为上述发泡剂。发泡剂的示例包括：诸如碳酸铵、碳酸氢铵、碳酸氢钠、亚硝酸胺、硼氢化钠和叠氮化物等的无机发泡剂；以及诸如氯氟烷烃、偶氮系化合物、肼系化合物、氨基脲系化合物、三唑系化合物和N-亚硝基系化合物等的有机发泡剂。包含如上所述的发泡剂的压敏粘合层的细节在日本特开平5-043851号公报、特开平2-305878号公报和特开昭63-33487号公报中说明了，据此通过引用将上述文献的内容并入本说明书。
压敏粘合层的厚度优选地为1μm至100μm，更优选地为3μm至60μm。
具有耐热性压敏粘合片的LED晶圆经由耐热性压敏粘合片20放置在工作台100上，并且在LED晶圆10的基板11的外侧形成反射层30（图2的B）。此时，LED晶圆10以发光元件12侧向下的方式放置。通过形成反射层30，可提高从发光元件12提取的光的量。
只要来自于发光元件12的光可以被令人满意地反射，可以使用任意适当的材料作为用于构成反射层30的材料。用于构成反射层30的材料的示例包括：诸如铝、银、金、钯、铂、铑和钌等的金属。例如，由金属制成的反射层30可以通过气相沉积法（例如，如在示例中说明的，MOCVD法）形成。优选地，例如由SiO2、TiO2、ZrO2和/或MgF2制成的底层形成在LED晶圆10的基板11的外侧，然后由金属制成的反射层30通过气相沉积法形成。根据本发明，具有贴附到发光元件12的外侧的耐热性压敏粘合片20的LED晶圆10经受反射层形成步骤。因此，耐热性压敏粘合片20被用作所谓的掩片（masking sheet），因此可以防止金属进入到LED晶圆10的背侧并且沉积在发光元件12上。此外，如上所述，当硬质基体构件被用作耐热性压敏粘合片的基体构件时，可矫正LED晶圆的翘曲，因此可以提供在防止金属沉积在发光元件12的方面具有高可靠性的制造方法。根据本发明的制造方法，金属层难以形成在发光元件12上，因此可得到具有高亮度的LED。
在本发明中，形成反射层30的方法不限于MOCVD法，可以采用任意其它适当的方法。其它适当的方法的示例包括离子辅助电子束沉积法。在离子 辅助电子束沉积法中，通常，LED晶圆在反射层形成侧的相反侧（也就是，发光元件侧）覆盖有盖，并且露出反射层形成面（也就是，基板的外侧面）。露出的面经受气相沉积处理。根据本发明，通过将耐热性压敏粘合片贴附到发光元件的外侧，还有在采用离子辅助电子束沉积法的情况中，可以防止金属进入LED晶圆的背侧和沉积在发光元件。
如上所述，可得到形成有反射层30的LED晶圆10（图2的C）。耐热性压敏粘合片20可以在反射层形成步骤之后立即被剥离，或者在耐热性压敏粘合片20仍然贴附在LED晶圆10上的状态下，LED晶圆10可以经受后续处理。当LED晶圆10在耐热性压敏粘合片20仍然贴附在LED晶圆10上的状态下经受后续处理时，可防止LED晶圆10在后续处理期间以及在步骤之间的处理期间受到损伤。
C.其它步骤
本发明的LED的制造方法进一步包括任意其它适当的步骤。其它适当的步骤的示例包括切割LED晶圆10以单片化成小元件片的步骤（切割步骤）。
图3A至图3D是示出根据本发明的实施方式的LED的制造方法的切割步骤的示意图。在本实施方式中，经历反射层形成步骤的LED晶圆10经受切割步骤。具体地，LED晶圆10以LED晶圆10的形成有反射层30的反射层30侧向下的方式被保持在切割带200上（图3A）。当在如示例说明地耐热性压敏粘合片20仍然贴附在LED晶圆10上的状态下、LED晶圆10经受切割步骤时，优选地，耐热性压敏粘合片20在LED晶圆10被保持在切割带200上之后被剥离（图3B）。此后，在厚度方向上半切割LED晶圆10（实质上是基板11）（图3C）。此后，扩展切割带200，使得形成有反射层30的LED晶圆10以切割部作为起点（origin）断开以得到单片化成小元件片的（多个）LED40（图3D）。
参考图3C和图3D，已经对如下的实施方式做出了说明：在该实施方式中，半切割LED晶圆10使得LED晶圆10以切割部作为起点断开（划线切割）。在图3C中，从发光元件12侧半切割LED晶圆10。然而，可以可选地以基板11（反射层30）侧向上的方式贴附切割带200，并且可以从基板11侧（反射层 30侧）半切割LED晶圆10。此外，除了上述划线切割之外，可以采用任意适当的方法作为切割LED晶圆的方法。其它方法的示例包括：在整个厚度方向上切割LED晶圆以通过扩展而使LED晶圆单片化成小元件片的方法，和在厚度方向上仅激光切割LED晶圆10的中心部从而以切割部作为起点断开LED晶圆10的方法（隐形切割（stealth dicing））。
图4A至图4G是示出根据本发明的另一实施方式的LED的制造方法的各步骤的示意图。在本实施方式中，在形成用于断开的分割部之后形成反射层30。在本实施方式中，首先，LED晶圆10（例如，已经经受背面研磨步骤的LED晶圆）被保持在切割带200上（图4A），然后从发光元件12侧半切割LED晶圆10（图4B）。随后，耐热性压敏粘合片20贴附到LED晶圆10的发光元件12的外侧（图4C）。随后，具有耐热性压敏粘合片的LED晶圆10以基板11侧向上的方式放置在工作台100上，并且反射层30形成在LED晶圆10的基板11侧（图4D）。随后，形成有反射层30的耐热性压敏粘合片的LED晶圆10以形成切割部的那一侧（耐热性压敏粘合片20侧）向上的方式再次被保持在切割带200上（图4E）。然后，在耐热性压敏粘合片20被剥离之后（图4F），LED晶圆以切割部作为起点断开，由此得到单片化成小元件片的（多个）LED40（图4G）。
在图3A至图3D和图4A至图4G示出的实施方式中，LED晶圆经由耐热性压敏粘合片20被放置在工作台上，然后反射层30形成在LED晶圆10上。此后，具有耐热性热敏粘合片的LED晶圆经受后续处理（图3A和图4E）。根据那些实施方式，耐热性压敏粘合片20保护LED晶圆10，因而可防止LED晶圆10在处理期间受到损伤。
Claims (2)
1.一种LED的制造方法，所述制造方法包括：
在LED晶圆的基板的外侧形成反射层，所述LED晶圆包括所述基板和在所述基板的一面上的发光元件；以及
在形成反射层之前，将耐热性压敏粘合片贴附到所述发光元件的外侧。
2.根据权利要求1所述的LED的制造方法，其特征在于，所述耐热性压敏粘合片包括硬质基体构件和压敏粘合层。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012-145450 | 2012-06-28 | ||
| JP2012145450A JP2014011243A (ja) | 2012-06-28 | 2012-06-28 | Ｌｅｄの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103531675A true CN103531675A (zh) | 2014-01-22 |
Family
ID=48577618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310269366.4A Pending CN103531675A (zh) | 2012-06-28 | 2013-06-28 | Led 的制造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20140004635A1 (zh) |
| EP (1) | EP2680324A1 (zh) |
| JP (1) | JP2014011243A (zh) |
| KR (1) | KR20140001781A (zh) |
| CN (1) | CN103531675A (zh) |
| TW (1) | TW201403889A (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014117591A1 (de) * | 2014-12-01 | 2016-06-02 | Osram Opto Semiconductors Gmbh | Halbleiterchip, Verfahren zur Herstellung einer Vielzahl an Halbleiterchips und Verfahren zur Herstellung eines elektronischen oder optoelektronischen Bauelements und elektronisches oder optoelektronisches Bauelement |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2613389B2 (ja) | 1987-04-17 | 1997-05-28 | 日東電工株式会社 | 発泡型粘着シート |
| JP2698881B2 (ja) | 1989-05-19 | 1998-01-19 | 日東電工株式会社 | 膨脹型粘着部材 |
| DE4011145A1 (de) * | 1990-04-06 | 1991-10-10 | Telefunken Electronic Gmbh | Lumineszenz-halbleiterelement |
| JP2970963B2 (ja) | 1991-08-14 | 1999-11-02 | 日東電工株式会社 | 剥離性感圧接着剤及びその粘着部材 |
| JP3784202B2 (ja) * | 1998-08-26 | 2006-06-07 | リンテック株式会社 | 両面粘着シートおよびその使用方法 |
| JP4418057B2 (ja) | 1999-09-14 | 2010-02-17 | 星和電機株式会社 | Ｌｅｄチップ |
| JP2002083785A (ja) * | 2000-09-07 | 2002-03-22 | Nec Kansai Ltd | 半導体素子の製造方法 |
| JP2003273042A (ja) * | 2002-03-13 | 2003-09-26 | Lintec Corp | 半導体装置の製造方法 |
| US20040000672A1 (en) * | 2002-06-28 | 2004-01-01 | Kopin Corporation | High-power light-emitting diode structures |
| TWI234298B (en) * | 2003-11-18 | 2005-06-11 | Itswell Co Ltd | Semiconductor light emitting diode and method for manufacturing the same |
| WO2007001144A1 (en) * | 2005-06-27 | 2007-01-04 | Lg Chem, Ltd. | Method for preparing light emitting diode device having heat dissipation rate enhancement |
| KR100632004B1 (ko) * | 2005-08-12 | 2006-10-09 | 삼성전기주식회사 | 질화물 단결정 기판 제조방법 및 질화물 반도체 발광소자 제조방법 |
| JP4970863B2 (ja) * | 2006-07-13 | 2012-07-11 | 日東電工株式会社 | 被加工物の加工方法 |
| JP2008060151A (ja) * | 2006-08-29 | 2008-03-13 | Nitto Denko Corp | 半導体ウエハ裏面加工方法、基板裏面加工方法、及び放射線硬化型粘着シート |
| TWI419355B (zh) * | 2007-09-21 | 2013-12-11 | Nat Univ Chung Hsing | 高光取出率的發光二極體晶片及其製造方法 |
| US7998768B1 (en) * | 2010-10-13 | 2011-08-16 | Ray-Hua Horng | Method for forming a light emitting diode |
-
2012
- 2012-06-28 JP JP2012145450A patent/JP2014011243A/ja active Pending
-
2013
- 2013-06-11 EP EP13171548.4A patent/EP2680324A1/en not_active Withdrawn
- 2013-06-12 US US13/915,988 patent/US20140004635A1/en not_active Abandoned
- 2013-06-19 TW TW102121806A patent/TW201403889A/zh unknown
- 2013-06-27 KR KR1020130074521A patent/KR20140001781A/ko not_active Application Discontinuation
- 2013-06-28 CN CN201310269366.4A patent/CN103531675A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014011243A (ja) | 2014-01-20 |
| EP2680324A1 (en) | 2014-01-01 |
| KR20140001781A (ko) | 2014-01-07 |
| TW201403889A (zh) | 2014-01-16 |
| US20140004635A1 (en) | 2014-01-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2063469B1 (en) | Method of manufacturing vertical light emitting diode | |
| TWI500183B (zh) | 發光二極體的製造方法 | |
| JP2015216378A (ja) | 窒化物半導体素子ならびにその製法 | |
| US8299481B2 (en) | Wafer-scaled light-emitting structure | |
| CN102187480A (zh) | 氮化物基半导体发光元件、制造氮化物基半导体发光元件的方法和发光装置 | |
| JP2015533456A (ja) | 波長変換発光デバイス | |
| CN103531674A (zh) | Led的制造方法 | |
| JP2006074019A (ja) | 半導体発光素子用の透光性電極 | |
| JP2010093186A (ja) | 窒化ガリウム系化合物半導体発光素子の製造方法、窒化ガリウム系化合物半導体素子の積層構造及び窒化ガリウム系化合物半導体発光素子、並びにランプ | |
| US20080305570A1 (en) | Led chip production method | |
| CN102576781A (zh) | 发光二极管用金属基板、发光二极管及其制造方法 | |
| CN103531676A (zh) | Led的制造方法 | |
| US20150048301A1 (en) | Engineered substrates having mechanically weak structures and associated systems and methods | |
| CN103531675A (zh) | Led 的制造方法 | |
| JP2007165626A (ja) | 発光素子及びその製造方法 | |
| JP2010087218A (ja) | Ｉｉｉ族窒化物半導体からなる発光素子およびその製造方法 | |
| US20140004636A1 (en) | Method of manufacturing an led | |
| JP2006253724A (ja) | Ｉｉｉ族窒化物系化合物半導体発光素子 | |
| US20100025655A1 (en) | Photon tunneling light emitting diodes and methods | |
| JP2006245555A (ja) | 透光性電極 | |
| JP2007081360A (ja) | 垂直型発光ダイオードおよびその製造方法 | |
| US20120021545A1 (en) | Method of manufacturing vertical light emitting diode | |
| JP2001358363A (ja) | 半導体発光素子の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140122 |