CN103502138A - 用于形状记忆合金线的晶片级集成的方法 - Google Patents
用于形状记忆合金线的晶片级集成的方法 Download PDFInfo
- Publication number
- CN103502138A CN103502138A CN201180066886.4A CN201180066886A CN103502138A CN 103502138 A CN103502138 A CN 103502138A CN 201180066886 A CN201180066886 A CN 201180066886A CN 103502138 A CN103502138 A CN 103502138A
- Authority
- CN
- China
- Prior art keywords
- line
- sma
- substrate
- groove
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
- B23K20/007—Ball bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45155—Nickel (Ni) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
- H01L2224/48451—Shape
- H01L2224/48453—Shape of the interface with the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85095—Temperature settings
- H01L2224/85099—Ambient temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8534—Bonding interfaces of the connector
- H01L2224/85345—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8536—Bonding interfaces of the semiconductor or solid state body
- H01L2224/85375—Bonding interfaces of the semiconductor or solid state body having an external coating, e.g. protective bond-through coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/858—Bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/858—Bonding techniques
- H01L2224/8585—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/85855—Hardening the adhesive by curing, i.e. thermosetting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/858—Bonding techniques
- H01L2224/85899—Combinations of bonding methods provided for in at least two different groups from H01L2224/858 - H01L2224/85898
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Micromachines (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
本发明涉及将形状记忆合金线附着到基板的方法,其中所述线被机械地附着到基板上的3D结构中。本发明也涉及包括附着到基板的形状记忆合金线的装置,其中所述线被机械地附着到基板上的3D结构中。
Description
技术背景和总体描述
请参见附件中的会议记录。
技术细节
第2到第5页上的描述解释了本方法的背景和核心构思。在后面各页示出了用于形状记忆合金线的机械固定以及用于形状记忆合金线的电连接的不同实施例。
自由空气球的固定
所述线通过线结合器的结合毛细管被馈送。为了允许线的牵拉,所述线的末端必须被固定在基板上。在这个构思中,所述线的末端被变形,使得线末端的直径比剩余线和结合毛细管的直径大。这允许钩入所述线末端或者将所述线挤入基板中的挤压配合结构(squeeze fitstructure)。
Fei!Hittar inte .说明了已经在背景段落中示出的构思。在基板中形成钩入结构(Fei!Hittar inte),然后形成自由空气球(Fei!Hittar inte .b),其被钩入基板中的结构(Fel!Hittar inte.c)并且允许通过结合毛细管牵拉SMA线(Fei!Hittar inte.d)。
如图2中示意地示出的,另一个构思是使用自由空气球的挤压配合锚定到基板上的挤压配合结构中。SMA线(201)通过结合毛细管(202)被馈送并且形成自由空气球(203)。在基板(204)中,形成具有比自由空气球的直径更小直径的沟槽(205)(图2a)。自由空气球的直径比结合毛细管的直径更大,这允许将自由空气球挤压到在基板中的沟槽中(图2b)。SMA线的末端通过自由空气球的挤压配合被锚定到基板的沟槽中(图2c)。
如图3中示意地示出的,相同构思适合于将自由空气球挤压配合到V形状的沟槽中,所述沟槽如例如在利用特殊工艺蚀刻硅基板时得到。SMA线(301)通过结合毛细管(302)被馈送并且形成自由空气球(303)。在基板(304)中,形成V形状的沟槽(305)(图3a)。自由空气球的直径比结合毛细管的直径更大,这允许将自由空气球挤压到在基板中的沟槽中(图3b)。SMA线的末端通过自由空气球的挤压配合被锚定到基板的沟槽中(图3c)。
图4示意地示出挤压配合构思的另一个变型,其中可变形夹持结构被形成在基板中,其允许SMA线直径的变化。SMA线(401)通过结合毛细管(402)被馈送并且形成自由空气球(403)。在基板(404)中,形成可变形夹持结构(405)(图4a)。自由空气球的直径比结合毛细管的直径更大,这允许将自由空气球挤压到在基板中的可变形结构中(图4b)。在自由空气球的挤压期间,夹持结构弹性地变形(图4b)并因此适应SMA线的直径变化并且将它们保持在适当位置(图4c)。
在图2到4中示意地示出的所有上面描述的构思可适于使得能够在进行机械固定的同时电接触SMA线。这允许在转换温度以上SMA线的简单接触和焦耳加热。图5到7示意地示出该构思。SMA线(501,601,701)通过结合毛细管(502,602,702)被馈送并且形成自由空气球(503,603,703)。在基板(504,604,704)上形成沟槽(505,605)或者可变形夹持结构(705)。最终地,金属膜(506,606,706)被沉积在基板上(图5a,6a,7a)。自由空气球的直径比结合毛细管的直径更大,这允许将自由空气球挤压到在基板中的沟槽中(图5b,6b,7b)。在挤压期间,在SMA上的自然氧化物破碎并且SMA直接与基板上的金属接触。因此,SMA可通过金属膜被电接触(507,607,707)(图5c,6c,7c)。
取代使用如在图2到7中示出的具有和/或不具有金属里衬的挤压配合,在基板中的沟槽可被填充有粘合剂以在沟槽中粘性地锚定自由空气球和所述线。图8和9示意地示出这个构思,其中图8用于与图2相似的直沟槽并且图9用于与图3相似的V形状的沟槽。SMA线(801,901)通过结合毛细管(802,902)被馈送并且形成自由空气球(803,903)。在基板(804,904)中形成直的(805)或者V形状的沟槽(905),其然后被部分地填充有粘合剂(806,906)(图8a,图9a)。自由空气球的直径比结合毛细管的直径更大,这允许将自由空气球挤压到在基板中的沟槽中的粘合剂中(图8b,9b)。自由空气球被嵌入在弯曲(807,907)的粘合剂中并因此锚定自由空气球(图8c,9c)。
除了挤压配合和粘性锚定之外,还可制作咬合结构以咬合自由空气球。图10示意地示出这个构思。SMA线(1001)通过结合毛细管(1002)被馈送并且形成自由空气球(1003)。在基板(1004)中形成沟槽(1005),并且在基板的顶部形成较薄层(1006),该较薄层部分地覆盖沟槽(1005),但在沟槽的中心具有开口,从而形成咬合结构(1007)(图10a)。自由空气球的直径比结合毛细管的直径更大,这允许推动自由空气球穿过顶层(1005)的开口进入基板中的沟槽(图10b)。所述顶层很快恢复(1007)并且将自由空气球保持在适当位置(图10c)。
在图10中示意地示出的构思的变型是在沟槽中提供弹簧,所述弹簧将自由空气球压靠在顶层中的咬接结构。图11示意地示出该构思。SMA线(1001)通过结合毛细管(1002)被馈送并且形成自由空气球(1003)。在基板(1004)中形成沟槽(1005),并且在基板的顶部形成较薄层(1006),该较薄层部分地覆盖沟槽(1005),但在沟槽的中心具有开口,从而形成咬合结构(1007)(图11a)。在沟槽(1005)的底部中形成弹性可变形的层(1108)。在将自由空气球挤压通过咬合结构后,自由空气球压缩该可变形层(1108)(图11b)。当去除结合毛细管时,弹性可变形的层将自由空气球挤压到咬合结构中,所述咬合结构足够坚固以承受得住由弹性可变形层产生的力(图11c)。
在用自由空气球将所述线的末端固定后,所述线被牵拉通过结合毛细管并且跨过基板到达下一个夹持结构。在这个夹持结构中,所述线被夹持并且因此在图2到11中示出的所有构思是可改编的。
图12到14示意地示出适应于SMA线的挤压装配的挤压配合方案。使用线结合器,SMA线(1201,1301,1401)被放置在形成于基板(1203,1303,1403)中的沟槽(1202,1302,1402)上,其直径小于SMA线的直径(图12a,13a,14a)。图12和13示出分别具有直的和V形状的沟槽的挤压装配。图14基于在图4中所示的构思并且以在允许SMA线的直径变化的基板中的可变形夹持结构(1405)为特征。使用活塞(1204,1304,1404)将所述线挤压到沟槽和/或可变形夹持结构中,所述活塞例如可以是第二基板,其在晶片结合器中被挤压到所述线和第二基板上(图12b,13b,14b)。遵循与在图2,3,4中所示的构思相同的原理,所述活塞然后被去除并且所述线保持在沟槽中(图12c,13c,14c)。
在图12到14中示意地示出的构思可适于使得能够在进行机械固定的同时电接触SMA线。这允许在转换温度以上SMA线的简单接触和焦耳加热。图15到17示意地示出该构思。SMA线(1501,1601,1701)被放置在形成在基板(1503,1603,1703)中并且覆盖有金属里衬(1504,1604,1704)的沟槽(1502,1602,1702)上面。沟槽直径小于SMA线的直径(图15a,16a,17a)。图15和16分别示出具有直的和V形状的沟槽的挤压装配。图17基于图4和14中示出的构思并且以在允许SMA线的直径变化的基板中的可变形夹持结构(1707)为特征。使用活塞(1505,1605,1705)将所述线被挤压到沟槽和/或可变形夹持结构中,所述活塞例如可以是第二基板,其在晶片结合器中被挤压到所述线和第二基板上(图15b,16b,17b)。在挤压期间,在SMA上的自然氧化物破碎并且SMA直接与基板上的金属接触。因此,SMA可通过金属膜被电接触(1506,1606,1706)(图15c,16c,17c)。
在图15到17中示出的在夹持结构上具有金属里衬的构思可通过在如图18中示出的球结合被加强。在图15-17的最终结构上的金属之上,几个自由空气球被结合以机械地支撑将所述线夹持到所述夹持结构中。SMA线(1801)通过结合毛细管(1802)被馈送并且形成自由空气球(1803)(图18a,b,c的左边)。自由空气球被结合到基板(1806)上的被夹持线(1804)和毗邻的金属里衬(1805)之上(图18b)。然后,使用高结合能量(1807)切断所述线(图18c)。
与在图8到9中示出的构思相似,在基板中的沟槽可被填充有粘合剂以在沟槽中粘性地锚定所述线。图19和20示意地示出这个构思,其中图19用于直沟槽以及图20用于V形状的沟槽。SMA线(1901,2001)被放置在沟槽/凹槽(1902,2002)上面,所述沟槽/凹槽形成在基板(1903,2003)中并且部分地填充有粘合剂(1904,2004)(图19a,20a)。使用活塞(1905,2005)将所述线挤压到沟槽中的粘合剂中,所述活塞例如可以是第二基板,其在晶片结合器中被挤压到所述线和第二基板上(图19b,20b)。然后所述线被嵌入在粘合剂中,所述粘合剂被固化(1906,2006)并因而锚定所述线(图19c,20c)。
在图19和20中示出的粘性锚定构思可与粘性晶片结合组合以支撑所述线的夹持。图21示出了该构思,其对于直的和V形状的沟槽两者是相似的。SMA线(2101)被放置在沟槽/凹槽(2102,2103)上面,所述沟槽/凹槽形成在基板(2104)中并且部分地填充有粘合剂(2104)。使用第二基板(2105),所述线被挤压到沟槽中的粘合剂中,第二基板覆盖有粘合剂(2106)并且被挤压到所述线和第一基板(2103)上。然后,所有粘合剂被固化并且所述线通过顶部上的第二基板和粘合剂两者被锚定。这样的方法对于具有加金属里衬的夹持结构的挤压配合也是可行的。图22示出该构思。所述线(2201)被放置在第一基板(2204)中的加金属里衬的(2202)沟槽(2203)中。使用第二基板(2205)将所述线挤压到加金属里衬的沟槽中,第二基板覆盖有金属(2206)并且被挤压到所述线和第一基板(2204)上。然后,第二基板及其金属被结合到第一基板上的金属。因此,SMA可通过金属膜被电接触,并且所述夹持由结合的第二基板支撑。
与在图10和11中示出的构思相似,可制作咬合结构以咬合所述线。图23示意地示出这个构思。在基板(2301)中形成沟槽(2302),并且在基板的顶部形成较薄层(2303),该较薄层部分地覆盖沟槽,但在沟槽的中心具有开口,从而形成咬合结构(2304)。SMA线(2305)被放置在咬合结构上面(图23a)。使用活塞(2306)将所述线挤压通过顶层的开口到达基板中的沟槽中,所述活塞例如可以是第二基板,其在晶片结合器中被挤压到所述线和第二基板上(图23b)。所述顶层很快恢复(2307)并且将所述线保持在适当位置(图23c)。
在图23中示意地示出的构思的变型是在沟槽中提供弹簧,所述弹簧将所述线压靠在顶层中的咬接结构。图24示意地示出该构思。在该基板(2401)中形成沟槽(2302),并且在基板的顶部形成较薄层(2403),该较薄层部分地覆盖沟槽,但在沟槽的中心具有开口,从而形成咬合结构(2404)。在沟槽的底部形成弹性可变形的层(2405)(图24a)。在将具有所述活塞(2407)的线(2406)挤压通过咬合结构后,所述线压缩可变形层(2408)(图22b)。当去除所述活塞时,弹性变形层将所述线挤压到咬合结构中,所述咬合结构足够坚固以承受得住由弹性变形层产生的力(图24c)。
工艺方案
图25和26示出用于使用线结合器将SMA线集成的工艺方案。在图25中的流程示出其中通过锚定自由空气球来提供第一固定的工艺。然后,所有下面需要的固定通过将利用线结合器将线夹持到夹持结构中来执行。在最后的夹持结构成一行之后,通过到基板表面上的高能楔入/缝合结合,所述线被切断。如果需要,可以重复这些步骤以集成更多线。如果不需要,所述线被集成并且可被进一步加工。
在图26中的流程示出其中通过锚定自由空气球来提供第一固定的工艺。然后,所述线跨越成行的所有夹持结构的上方并且最终通过到基板表面上的高能楔入/缝合结合,所述线被切断。如果需要,可以重复这些步骤以放置更多线。如果所有线在合适位置,使用活塞将它们挤压到下面的夹持结构中。如果所述夹持足够坚固,基板可被进一步加工。如果不需要,在夹持结构中的线上可放置另外的球结合,或者在挤压期间第二基板可被结合到所述线和第一基板上。
用于使用标准线结合技术制作微驱动器的NITI形状记忆合金线的晶片级集成
摘要
本文报道了使用标准线结合器将SMA线第一集成到硅基MEMS结构中。这个方法允许NiTi基SMA线的快速和高效的放置、对准以及机械地附着到硅基MEMS。所述线被机械地锚定并且夹持到晶片上的深蚀刻的硅结构中。所述放置精度是高的,具有4μm的平均偏差,并且所述机械夹持是坚固的,允许所述SMA线的成功驱动。
序言
当需要高的力和功时,形状记忆合金(SMA)是在微机电系统(MEMS)中使用的有吸引力的驱动器材料。因为SMA提供的高功密度,在微尺度,SMA胜过大多数其它驱动原理一个以上的数量级[1]。传统上主要有两种方法将SMA材料集成到微系统中。第一种方法是拾取和放置方法,其中所述SMA材料和所述微系统被分别制作,并且然后在随后的步骤中被组合[2]。这个方法具有允许体SMA材料集成的优点,所述体SMA材料是市售的并且以相对低的材料成本在宽的厚度范围中被提供。然而,SMA集成是基于每个装置级(per-device level)被实施,其产生高组装成本。第二个方法基于直接将薄NiTi膜溅射沉积到微结构上[3],其具有允许晶片级加工的益处。然而,由于难的沉积可控性,该工艺在变换温度和应变的再生上被限制并且NiTi溅射沉积主要对于小于10μm的厚度是可行的[4]。
SMA线晶片级集成到硅微结构上具有晶片级集成和使用体SMA材料两者的益处,已经被表明用于具有极好性能的微驱动器[5]。然而,还没有建立或者提出标准的制作工艺。线的放置需要具有手工线处理、对准和集成的专门设计的工具。相比之下,线结合是用于电气互连的极其成熟的、节省成本的和广泛可用的后端工艺[6]。由于就稳定性、产量和放置准确性而言这种标准技术的非常好的可用性和高性能,以及高达每秒22个结合的速度和2μm内的放置准确性,使用这种标准技术是非常有吸引力的。然而,由于当与例如金和铝的普通线结合材料相比时,NiTi材料的维氏硬度(Vickers hardness)高出一个数量级,NiTi SMA线的直接线结合是不可行的[7]。本文提出用于通过使用传统线结合工具将NiTi SMA线结合到硅基板之上的第一晶片级集成构思。
构思
使用线结合器的SMA线的晶片级集成允许所述线的快速放置和固定。不需要另外的对准步骤。因为NiTi线的坚硬,这些线在标准金或者铝焊盘上的直接线结合是不可行的。在本文中,所述线替代地通过在所述晶片上的Si夹持和锚结构被机械地固定。这些机械固定结构通过使用标准的和未修改的线结合器,使得能够集成所述NiTi线。
图1:晶片级集成构思的图示:在一个锚和一个夹持结构的帮助下,SMA线被机械地固定。每个固定对被放置在晶片边缘的相对侧。
在图1中描述基本的集成构思。SMA线的集成被分成晶片级集成和芯片级集成。晶片级集成将在硅晶片上的SMA线的对准和固定相组合。然后可以以芯片级实施最终的机械和电气集成以形成驱动器本身。
图2:集成流程的截面图:首先,自由空气球由电气放电产生(a)。然后将所述球锚定在其锚定结构中。SMA线(37.5μm直径)在整个晶片区域上被馈送和导引到其第二固定结构(b)。SMA线被夹持在硅悬臂中间并最终通过由结合毛细管和高结合力截断所述线而被切断(c)。
在晶片级上,跨越整个晶片使用在限定位置中的两种不同的机械结构以高放置精度附着SMA线。基于球楔(ballwedge)线结合工艺,产生并且随后在第一集成结构中锚定自由空气球(图1a)。SMA线被固定并且可跨越晶片朝向夹持结构被导引(图1b),其中SMA线被机械地附着。这个晶片级集成允许在第二步骤中的也在芯片级上的另一个附着。然而,本文的重点在于晶片级集成的设计和开发。
使用这个集成构思,整个晶片可以以高放置精确度布有SMA线。而且使用线结合器提供集成工艺的高生产能力和高再现性。SMA线的完全集成在室温下进行,从而避免引起在通常90℃的高温时发生的SMA变形。因此,这使得能够集成预应变的SMA线。此外,这个集成构思是CMOS兼容的,提供了将微电子器件与微驱动器集成的可能性。
制作
在100mm硅基板上制作线钩住和夹持结构。通过一系列各向异性和各向同性DIRE步骤实现两种类型的结构[8]。两种集成结构的蚀刻都在STS ICP蚀刻反应器中进行。
两种固定结构每种的制作需要一个光刻和DRIE工艺。第一个光刻利用通过旋涂施加的标准光致抗蚀剂来进行。第二个光致抗蚀剂施加通过喷涂稀释的抗蚀剂来进行以确保由第一DRIE工艺生成的深蚀刻结构的完全保护。作为最后步骤,所有光致抗蚀剂残留物通过等离子体灰化被去除。
在图1a和图3中描绘了固定所述线的始端的锚结构。它由两个功能部件构成,即着落区和锚部件。着落区能够使SMA球下降到锚结构中并且随后使SMA球固定到相邻锚部件中。对于SMA球的适当锚定,蚀刻几何形状至关重要。SMA球的锚定通过锚结构自身的特定底切蚀刻轮廓来实现。首先蚀刻各向异性沟槽,接着钝化垂直侧壁。随后各向同性蚀刻在各向异性蚀刻轮廓下面产生底切。
用于线末端的硅结构组合两个功能部件,即夹持结构和切断区。图1b)和图4描绘了具有一对面对的垂直悬臂的夹持结构。两对面对的垂直悬臂在它们中间夹持SMA线。第一对固定并且对准SMA线。第二对稳定SMA线用以截断。夹持结构的各向异性蚀刻轮廓包含在悬臂的上部分中的小斜面,所述小斜面通过短的各向同性蚀刻实现。如在图4中描绘的,斜面确保了所述SMA线在夹具中的恒定高度。
使用半自动线结合器(Delvotec5410)来集成所述线。使用市售的具有90℃的变形温度的预应变NiTi SMA线(直径为37.5μm的)。因为所述线已经预应变,所以不需要用于预应变所述线的特殊工具[5]。在图2中描绘的线集成从通过电气放电引起形成自由空气球开始,所述电气放电在结合毛细管的末端上局部地熔化所述线。在SMA线的末端的液态金属卷起并且形成自由空气球。因为在通过辉光放电的快速熔化期间,TiNi合金易于在空气中氧化,所以在氦气氛中实施电子点火(Electrical Flame Off,EFO)[10]。然后自由空气球被降低到着落区中并且随后被钩到其相邻锚部件中。通过利用线结合器,SMA线在晶片上被放置到夹持结构,其中它被推到面对的悬臂对中间。最后,SMA线通过由结合毛细管和高结合力截断所述线而被切断。用于SMA线的这个集成方法开启了在芯片级上的宽范围的不同集成方法,然后可使用所述集成方法利用例如聚合体固定[5],或者通过使用也在单个芯片上固定SMA线的夹持结构来制作高性能驱动器。
试验结果
图3描绘了通过在随后的三个步骤中组合的各向异性和各向同性的深反应离子蚀刻制作的锚结构。被底切的(平面外)侧壁结构和楔形的(平面内)设计两者都稳妥地将SMA线和其锚固定在一起。对于不均匀地形成的和/或定尺寸的自由空气球,这种设计是非常能容忍错误的,并且因此确保SMA线的可靠锚定。
图3:锚结构的SEM图像,所述锚结构是通过在三个步骤中组合的各向异性和各向同性的深反应离子蚀刻制作的。
图4:夹持固定的SEM图像,具有对一个夹持特征放大的视图。在线结合器的帮助下,将所述线推到面对的悬臂对中间。使用四个相似的夹具来固定每个线。
如在图4中描绘的,已经发现具有50×500×220μm的悬臂尺寸的夹持结构最稳定地将SMA线机械地固定。为了将所述线咬接到夹持结构中,×××mN的力是必需的。
所述线集成的最后步骤是类似于缝合结合来实施的线截断。然而,使用×××mN的非常高的结合力和超声波产生所述线的直切并且与常规的未变形的线结合和所述线到表面的微焊接形成对比,如在图5中描绘的。这也表明依靠传统的线结合将SMA线固定是不可行的。
图5:截断的SMA线的SEM图像。使用高结合力和超声波产生所述线的直切并且与常规的未变形的线结合和所述线到表面的微焊接形成对比。
提出的晶片级集成方法也包括SMA线在芯片级上的对准。这个集成方法的放置精确度已经利用光学轮廓仪(Wyko NT9300)分析。如在图6中描绘的,确定相对于理想几何锚对夹具中心线的面内线放置偏差以及从所述线到基板的距离(即芯片级)。样品,具有37.5μm的直径的75mm长的SMA线被集成在100mm硅基板上。面内平均偏差是4.19±4.22(σ)μm,具有最大值13.9μm。SMA线到基板的面外距离平均是15.6±4.5(σ)μm并且最大是23.2μm(图6)。对于SMA线的芯片级固定的设计,这是重要的度量,所述度量可例如在随后的步骤中利用Ni电镀进行[9]。此外,通过实现简单的驱动器来对锚和夹持结构的机械鲁棒性进行基础评估。这个驱动器基于作为冷态重置的300μm厚的硅悬臂和作为驱动的两个平行集成的75mm长的SMA线,硅悬臂具有100mm的长度和2mm的宽度。能量输入由加热板提供,在加热板上,驱动器被固定在一侧以增强热接触。图7a)示出驱动器在驱动位置和空闲位置两者中的截面。图7b)描绘在半驱动状态中的驱动器以及图7c)描绘在完全驱动状态中的驱动器。它揭示两个SMA线固定元件都承受了由SMA线产生的力,根据线数据表,该力是200mN[11]。所述驱动被执行了几百次而未失败。
图6:针对具有75mm长度和37.5μm直径的SMA线的对准精确度的白光干涉测量数据。如在图中所示的,面外测量(蓝色的直线图)确定在所述线和基板之间的距离,面内测量(红色的虚线图)确定相对于理想几何锚对夹具中心线的横向线放置偏差。
图7:为了验证所提出的线固定方法的机械稳定性,已经将两个75mm长的SMA线平行地集成在具有3×100mm大小的硅芯片上。a)截面图,红色的虚线轮廓代表在热状态中的芯片。b)示出在具有70℃温度的加热板上被稍微驱动的器件的图像。c)示出在90℃时具有增加的驱动的器件。
讨论和结论
使用标准线结合器设备,我们已经成功地演示了形状记忆合金线的晶片级集成。即使使用半自动线结合器进行SMA线集成,在这个工作中可实现极好的放置准确性。使用全自动线结合设备以及光学图像识别和对准系统潜在地进一步改进这些结果并且使这些技术的实施能够用于大规模生产。SMA线的锚定和夹持显示了极好的鲁棒性,所述鲁棒性表明这个集成构思也可应用在芯片级/驱动器级上。
致谢
作者希望感谢Johnson Matthey Plc提供了sMA线以及他们的支持。
参考文献
[1]M.Kohl et al.:″Shape memory micnoactuators″,Springer,pp.23-24,(2004)
[2]K.Skrobanck et al.:″Stress-optimized shape memory mi-croyaives″,MEMSProc.,pp.256-261,(1997)
[3]P.Kruleyjtch et.al.:″Thin.film shape.memory alloy mi-croactuators″,J.Microelectromech.Syst.,vol.5,no.4,pp.270-82(1996)
[4]S.Miyazaki et al.:″Development of high-speed microac-tuators utilizing sputterdeposited IiNi-base shape mem-ory alloy thin films″,Actuator Proc.,pp.372-377(2008)
[5]D.Clausi et al.:″Design and wafer-level.fabrication ofSMA wire microactuators on silicon″,JMEMS,vol.19,no.4(2010)
[6]W.J.,Greig et al.:″Integraied circuit packaging,as-semblyand interconnections″,Springer.pp.103-128,(2007)
[7]K.Gall et al.:″Instrumeried micro-indentation of NiTishape-memory alloys″,Acta Matcrialia,vol.49.no.16,pp.3205-3217(2001)
[8]N,Roxhed et al.:″A method.for tapered deep reactiyc ionetching using a modified Bosch process″,JMM,vol.17,pp.1087-1092,(2007)
[9]D.Clausi et al.:″Wafer-level mechanical and electricalintegration of SMA wires to silicon MEMS using electro-plating″,MEMS Proc.(2011)
[10]T. Goryczka et al.:″Characterizaion of ,ni-tridedloxidized layers covering NITi shape memoryalloy″.Solid State Phenotmona,vol.54,pp.151-154,(2007)
[11]DYNALLOY,Inc.,″Technical characteristics of fiexinolactuator wires″,Datasheet,Fll40Rey H,pp,6
Claims (2)
1.将线附着到基板的方法,其特征在于:所述线被机械地附着到基板上的3D结构中。
2.包括附着到基板的线的装置,其特征在于所述线被机械地附着到基板上的3D结构中。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610090270.5A CN105719979B (zh) | 2010-11-22 | 2011-11-22 | 用于形状记忆合金导线的晶片级集成的方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE1001126-0 | 2010-11-22 | ||
SE1001126 | 2010-11-22 | ||
PCT/SE2011/051404 WO2012071003A1 (en) | 2010-11-22 | 2011-11-22 | Method for the wafer-level integration of shape memory alloy wires |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610090270.5A Division CN105719979B (zh) | 2010-11-22 | 2011-11-22 | 用于形状记忆合金导线的晶片级集成的方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN103502138A true CN103502138A (zh) | 2014-01-08 |
Family
ID=46146124
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180066886.4A Pending CN103502138A (zh) | 2010-11-22 | 2011-11-22 | 用于形状记忆合金线的晶片级集成的方法 |
CN201610090270.5A Active CN105719979B (zh) | 2010-11-22 | 2011-11-22 | 用于形状记忆合金导线的晶片级集成的方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610090270.5A Active CN105719979B (zh) | 2010-11-22 | 2011-11-22 | 用于形状记忆合金导线的晶片级集成的方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US9054224B2 (zh) |
EP (1) | EP2643261A4 (zh) |
JP (2) | JP2014502422A (zh) |
KR (1) | KR101856996B1 (zh) |
CN (2) | CN103502138A (zh) |
AU (1) | AU2011332334B2 (zh) |
CA (1) | CA2818301A1 (zh) |
SG (1) | SG190201A1 (zh) |
WO (1) | WO2012071003A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113573220A (zh) * | 2021-07-28 | 2021-10-29 | 杭州安普鲁薄膜科技有限公司 | 一种带有防尘透声膜组件的mems复合件 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG190201A1 (en) * | 2010-11-22 | 2013-06-28 | Senseair Ab | Method for the wafer-level integration of shape memory alloy wires |
US9366879B1 (en) | 2014-12-02 | 2016-06-14 | Hutchinson Technology Incorporated | Camera lens suspension with polymer bearings |
US9454016B1 (en) | 2015-03-06 | 2016-09-27 | Hutchinson Technology Incorporated | Camera lens suspension with integrated electrical leads |
JP6637516B2 (ja) | 2015-04-02 | 2020-01-29 | ハッチンソン テクノロジー インコーポレイテッドHutchinson Technology Incorporated | カメラレンズサスペンション用ワイヤ供給及び取り付けシステム |
US9635764B2 (en) * | 2015-09-25 | 2017-04-25 | Intel Corporation | Integrated circuit and method that utilize a shape memory material |
US10670878B2 (en) | 2016-05-19 | 2020-06-02 | Hutchinson Technology Incorporated | Camera lens suspensions |
JP6923563B2 (ja) | 2016-06-09 | 2021-08-18 | ハッチンソン テクノロジー インコーポレイテッドHutchinson Technology Incorporated | サスペンションアセンブリについての接着剤を有する形状記憶合金ワイヤ取付構造体 |
US11662109B2 (en) | 2019-06-05 | 2023-05-30 | Carrier Corporation | Enclosure for gas detector |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1208368A (zh) * | 1995-05-26 | 1999-02-17 | 福姆法克特公司 | 利用牺牲基片制作互连件和接点 |
US20030090282A1 (en) * | 1996-04-01 | 2003-05-15 | Salman Akram | Semiconductor test interconnect with variable flexure contacts |
TW200425448A (en) * | 2003-05-08 | 2004-11-16 | Chipmos Technologies Inc | Wafer level chip scale package with redistribution wires by wire bonding and method for manufacturing the same |
US20070126091A1 (en) * | 2005-12-07 | 2007-06-07 | Wood Alan G | Semiconductor components having through wire interconnects (TWI) |
EP1903613A1 (de) * | 2006-09-18 | 2008-03-26 | Solon AG | Leichtgewichtiges Photovoltaiksystem in einer Ausbildung als Modulplatte |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03209838A (ja) * | 1990-01-12 | 1991-09-12 | Nec Corp | 半導体装置 |
JPH0637132A (ja) | 1992-07-15 | 1994-02-10 | Hitachi Ltd | ボンディングワイヤおよびこれを用いた半導体装置ならびにボンディング方法 |
GB2297626A (en) * | 1995-01-27 | 1996-08-07 | Cambridge Consultants | Miniature mounting grooved substrate |
EP2063466A2 (en) | 1995-05-26 | 2009-05-27 | FormFactor, Inc. | Interconnection element and method of fabrication thereof |
JP2000138254A (ja) * | 1998-10-29 | 2000-05-16 | Fujitsu Ltd | 配線装置及び配線構造及び半導体装置及び半導体装置の製造方法 |
US6285081B1 (en) * | 1999-07-13 | 2001-09-04 | Micron Technology, Inc. | Deflectable interconnect |
JP2001291736A (ja) * | 2000-04-06 | 2001-10-19 | Seiko Epson Corp | ワイヤボンディング用キャピラリ |
US6478212B1 (en) * | 2001-01-16 | 2002-11-12 | International Business Machines Corporation | Bond pad structure and method for reduced downward force wirebonding |
JP3814723B2 (ja) * | 2003-02-07 | 2006-08-30 | 独立行政法人科学技術振興機構 | 形状記憶合金の接合構造形成方法 |
US7073702B2 (en) * | 2003-10-17 | 2006-07-11 | International Business Machines Corporation | Self-locking wire bond structure and method of making the same |
US7475802B2 (en) * | 2004-04-28 | 2009-01-13 | Texas Instruments Incorporated | Method for low loop wire bonding |
US7442641B2 (en) * | 2004-05-12 | 2008-10-28 | Kulicke And Soffa Industries, Inc. | Integrated ball and via package and formation process |
US7750483B1 (en) * | 2004-11-10 | 2010-07-06 | Bridge Semiconductor Corporation | Semiconductor chip assembly with welded metal pillar and enlarged plated contact terminal |
KR100799878B1 (ko) * | 2007-03-05 | 2008-01-30 | 앰코 테크놀로지 코리아 주식회사 | 반도체 칩의 볼 본딩력 향상을 위한 앵커부재 및 이를이용한 와이어 본딩 방법 |
FR2917895B1 (fr) * | 2007-06-21 | 2010-04-09 | Commissariat Energie Atomique | Procede de fabrication d'un assemblage de puces reliees mecaniquement au moyen d'une connexion souple |
SG190201A1 (en) * | 2010-11-22 | 2013-06-28 | Senseair Ab | Method for the wafer-level integration of shape memory alloy wires |
US9362074B2 (en) * | 2013-03-14 | 2016-06-07 | Intel Corporation | Nanowire-based mechanical switching device |
-
2011
- 2011-11-22 SG SG2013035308A patent/SG190201A1/en unknown
- 2011-11-22 CN CN201180066886.4A patent/CN103502138A/zh active Pending
- 2011-11-22 CN CN201610090270.5A patent/CN105719979B/zh active Active
- 2011-11-22 US US13/885,257 patent/US9054224B2/en active Active
- 2011-11-22 JP JP2013539798A patent/JP2014502422A/ja active Pending
- 2011-11-22 EP EP11843548.6A patent/EP2643261A4/en not_active Withdrawn
- 2011-11-22 WO PCT/SE2011/051404 patent/WO2012071003A1/en active Application Filing
- 2011-11-22 CA CA2818301A patent/CA2818301A1/en not_active Abandoned
- 2011-11-22 KR KR1020137016114A patent/KR101856996B1/ko active IP Right Grant
- 2011-11-22 AU AU2011332334A patent/AU2011332334B2/en active Active
-
2016
- 2016-03-01 JP JP2016039342A patent/JP6010242B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1208368A (zh) * | 1995-05-26 | 1999-02-17 | 福姆法克特公司 | 利用牺牲基片制作互连件和接点 |
US20030090282A1 (en) * | 1996-04-01 | 2003-05-15 | Salman Akram | Semiconductor test interconnect with variable flexure contacts |
TW200425448A (en) * | 2003-05-08 | 2004-11-16 | Chipmos Technologies Inc | Wafer level chip scale package with redistribution wires by wire bonding and method for manufacturing the same |
US20070126091A1 (en) * | 2005-12-07 | 2007-06-07 | Wood Alan G | Semiconductor components having through wire interconnects (TWI) |
EP1903613A1 (de) * | 2006-09-18 | 2008-03-26 | Solon AG | Leichtgewichtiges Photovoltaiksystem in einer Ausbildung als Modulplatte |
Non-Patent Citations (1)
Title |
---|
DONATO CLAUSI ET AL: "Design and Wafer-Level Fabrication of SMA Wire Microactuators on Silicon", 《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113573220A (zh) * | 2021-07-28 | 2021-10-29 | 杭州安普鲁薄膜科技有限公司 | 一种带有防尘透声膜组件的mems复合件 |
CN113573220B (zh) * | 2021-07-28 | 2023-01-03 | 杭州安普鲁薄膜科技有限公司 | 一种带有防尘透声膜组件的mems复合件 |
Also Published As
Publication number | Publication date |
---|---|
US9054224B2 (en) | 2015-06-09 |
CA2818301A1 (en) | 2012-05-31 |
EP2643261A1 (en) | 2013-10-02 |
CN105719979B (zh) | 2018-01-16 |
JP2014502422A (ja) | 2014-01-30 |
KR20140002677A (ko) | 2014-01-08 |
EP2643261A4 (en) | 2018-01-17 |
CN105719979A (zh) | 2016-06-29 |
AU2011332334A1 (en) | 2013-06-27 |
SG190201A1 (en) | 2013-06-28 |
WO2012071003A1 (en) | 2012-05-31 |
KR101856996B1 (ko) | 2018-06-20 |
JP6010242B2 (ja) | 2016-10-19 |
AU2011332334B2 (en) | 2015-05-21 |
US20130292856A1 (en) | 2013-11-07 |
JP2016105513A (ja) | 2016-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103502138A (zh) | 用于形状记忆合金线的晶片级集成的方法 | |
US6406636B1 (en) | Methods for wafer to wafer bonding using microstructures | |
WO2006019761A2 (en) | Mems device and interposer and method for integrating mems device and interposer | |
US6643075B2 (en) | Reentrant-walled optical system template and process for optical system fabrication using same | |
US8519534B2 (en) | Microsprings partially embedded in a laminate structure and methods for producing same | |
Fischer et al. | Wafer-level integration of NiTi shape memory alloy wires for the fabrication of microactuators using standard wire bonding technology | |
US20140264841A1 (en) | Surface Treatment in Electroless Process for Adhesion Enhancement | |
CN104677529A (zh) | 一种压力计芯片结构及其制备方法 | |
CN110002396B (zh) | 一种晶圆级三层结构的封装方法 | |
Fischer et al. | Wire-bonder-assisted integration of non-bondable SMA wires into MEMS substrates | |
CN112382599B (zh) | 半导体器件的临时键合与解键合的方法以及半导体器件 | |
CN104355284A (zh) | 一种mems器件双面对通介质隔离结构及制备方法 | |
WO2014036770A1 (zh) | 一种微机械芯片测试探卡及其制作方法 | |
CN1313813C (zh) | 微结构键合工艺检测方法及检测结构 | |
EP2216290A2 (en) | Mitigation of high stress areas in vertically offset structures | |
Fischer et al. | WIRE BONDER ASSISTED INTEGRATION OF NON-BONDABLE SHAPE MEMORY ALLOY (SMA) WIRES INTO MEMS SUBSTRATES | |
KR100806380B1 (ko) | 프로브 카드 제조 방법 및 이에 의한 프로브 카드 | |
Sameoto et al. | Wirebonding Characterization and Optimization on Thick Filmsu-8 MEMS Structures and Actuators | |
Park et al. | 3D integration using self-assembly at air-water interface | |
JP2024501399A (ja) | ファンアウトパッケージまたは相互接続ブリッジのための転写可能ピラー構造 | |
Lai et al. | A claw type of MEMS probe card for the electrical testing of micro-solder ball | |
Sandstrom et al. | Full wafer integration of shape memory alloy microactuators using adhesive bonding | |
CN104051388A (zh) | 用于增强粘附性的无电镀工艺中的表面处理 | |
Hofmann et al. | 3D Wafer Level Packaging By Using Cu-Through Silicon Vias For Thin MEMS Accelerometer Packages | |
CN102491261B (zh) | 一种基于引线键合的mems自组装过程的限位方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140108 |