CN105719979B - 用于形状记忆合金导线的晶片级集成的方法 - Google Patents

用于形状记忆合金导线的晶片级集成的方法 Download PDF

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CN105719979B
CN105719979B CN201610090270.5A CN201610090270A CN105719979B CN 105719979 B CN105719979 B CN 105719979B CN 201610090270 A CN201610090270 A CN 201610090270A CN 105719979 B CN105719979 B CN 105719979B
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wire
substrate
free air
structures
air ball
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CN105719979A (zh
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S.布劳恩
F.尼克劳斯
A.菲舍尔
H.格拉丁
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SenseAir AB
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SenseAir AB
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    • B81—MICROSTRUCTURAL TECHNOLOGY
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    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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Abstract

本发明公开了一种将导线附着到基板的方法，其中所述导线被机械地附着到作为所述基板的一部分的3D结构。包括至少一个夹持结构，并且该方法包括下面的步骤：通过在所述导线的一部分与所述3D结构之间产生摩擦力或进行锚定，来固定所述导线，以及通过施加力来截断所述导线。本发明还公开了一种包括附着到基板的导线的装置，所述导线被配置为机械地附着到所述基板上的3D结构。所述基板包括具有至少一个夹持结构的固定对，并且所述导线被配置为至少通过所述固定对而被机械地固定到所述基板，并且通过导线结合器的结合毛细管和所施加的力被截断。本发明还公开了一种导线结合器。

Description

用于形状记忆合金导线的晶片级集成的方法
本申请是申请日为2011年11月22日、申请号为201180066886.4的同名称申请的分案申请。
技术领域
本发明涉及将形状记忆合金导线附着到基板的方法，以及包括附着到基板的形状记忆合金导线的装置。
背景技术
当需要高的力和功时，形状记忆合金（SMA）是在微机电系统（MEMS）中使用的有吸引力的驱动器材料。因为SMA提供的高功密度，在微尺度，SMA胜过大多数其它驱动原理一个以上的数量级，参见M.Kohl等人的“Shape memory microactuators”,Springer, pp.23-24,(2004)。
传统上主要有两种方法将SMA材料集成到微系统中。第一种方法是拾取和放置方法，其中所述SMA材料和所述微系统被分别制作，并且然后在随后的步骤中被组合，参见K.Skrobanek等人的“stress-optimized shape memory microvalves”, MEMS Proc.,pp.256-261, (1997)。这个方法具有允许体SMA材料集成的优点，所述体SMA材料是市售的并且以相对低的材料成本在宽的厚度范围中被提供。然而，SMA集成是基于每个装置级（per-device level）被实施，其产生高组装成本。第二个方法基于直接将薄NiTi膜溅射沉积到微结构上，参见P.Krulevitch等人的“Thin film shape memory alloymicroactuators”, J. Microelectromech. Syst., vol.5, no.4, pp.270-82 (1996)，其具有允许晶片级加工的益处。然而，由于难的沉积可控性，该工艺在变换温度和应变的再生上被限制并且NiTi溅射沉积主要对于小于10μm的厚度是可行的，参见S.Miyazaki等人的“Development of high-speed microactuators utilizing sputterdeposited TiNi-base shape memory alloy thin films”, Actuator Proc.,pp.372-377(2008)。
SMA导线晶片级集成到硅微结构上具有晶片级集成和使用体SMA材料两者的益处，已经被表明用于具有极好性能的微驱动器，参见D.Clausi等人的“Design and wafer-level fabrication of SMA wire microactuators on silicon”, JMEMS, vol.19,no.4(2010)。然而，还没有建立或者提出标准的制作工艺。导线的放置需要具有手工导线处理、对准和集成的专门设计的工具。相比之下，导线结合是用于电气互连的极其成熟的、节省成本的和广泛可用的后端工艺，参见W.J..Greig等人的“Integrated circuit packaging,assembly and interconnections”, Springer, pp.103-128,(2007)。由于就稳定性、产量和放置准确性而言这种标准技术的非常好的可用性和高性能，以及高达每秒22个结合的速度和2μm内的放置准确性，使用这种标准技术是非常有吸引力的。然而，由于当与例如金和铝的普通导线结合材料相比时，NiTi材料的维氏硬度（Vickers hardness）高出一个数量级，NiTi SMA导线的直接导线结合是不可行的，参见K.Gall等人的“Instrumented micro-indentation of NiTi shape-memory alloys”,Acta Materialia,vol.49, no.16,pp.3205-3217(2001)。
发明内容
本发明提出用于通过使用传统导线结合工具将NiTi SMA导线结合到硅基板之上的第一晶片级集成构思。
使用导线结合器的SMA导线的晶片级集成允许所述导线的快速放置和固定。不需要另外的对准步骤。因为NiTi导线的坚硬，这些导线在标准金或者铝焊盘上的直接导线结合是不可行的。本发明教导所述导线替代地通过在所述晶片上的Si夹持和锚结构被机械地固定。这些机械固定结构通过使用标准的和未修改的导线结合器，使得能够集成所述NiTi导线。
在一个锚和一个夹持结构的帮助下，所述SMA导线被机械地固定，其中每个固定对被放在所述晶片边缘的相对侧。
本发明教导虽然使用导线结合器，自由空气球通过电气放电产生，所述球然后被锚定在其锚定结构中，所述SMA导线在整个晶片区域上被馈送和导引到其第二固定结构，并且所述SMA导线被夹持在硅悬臂中间并最终通过由结合毛细管和高结合力截断所述导线而被切断。
优点
可以与根据本发明的方法和装置最相关联的优点是它提供使用标准导线结合器将SMA导线第一集成到硅基MEMS结构中。这个方法允许NiTi基SMA导线的快速和高效的放置、对准以及机械地附着到硅基MEMS。所述导线被机械地锚定并且夹持到晶片上的深蚀刻的硅结构中。所述放置精度是高的，具有4μm的平均偏差，并且所述机械夹持是坚固的，允许所述SMA导线的成功驱动。
附图说明
现在将参照附图详细地描述根据本发明的方法和装置，在附图中：
图1是晶片级集成构思的图示，
图2是集成流程的截面图，
图3是锚结构的SEM图像，所述锚结构是通过在三个步骤中的组合的各向异性和各向同性的深反应离子蚀刻制作的，
图4是夹持固定的SEM图像，具有对一个夹持特征放大的视图，
图5是截断的SMA导线的SEM图像，
图6是针对SMA导线的对准精度的白光干涉测量数据的曲线图，
图7示出提出的导线固定方法的机械稳定性的验证，其中图7a是截面图，红虚线轮廓代表在热状态中的芯片，图7b示出在具有70℃温度的加热板上被轻微驱动的装置的图像，并且图7c示出在90℃时具有增加驱动的装置的图像，
图8是在基板上制备钩入（hook-in）结构并且用于SMA导线的钩入的构思的示意性图示，
图9是SMA导线末端的挤压配合的示意和简化图示，
图10是将SMA导线末端挤压配合到由各向异性蚀刻制作的硅基板中的V凹槽中的示意和简化图示，
图11是将SMA导线末端挤压配合到弹性可变形结构中的示意和简化图示，
图12是用于机械和电气互连的在基板上具有金属里衬的SMA导线末端挤压配合的示意和简化图示，
图13是用于机械和电气互连的SMA导线末端挤压配合到在基板上具有金属里衬的V凹槽中的示意和简化图示，
图14是用于机械和电气互连的SMA导线末端挤压配合到在基板上具有金属里衬的弹性可变形结构中的示意和简化图示，
图15是自由空气球的粘性固定的示意和简化图示，
图16是将自由空气球粘性固定到V凹槽中的示意和简化的图示，
图17是自由空气球的咬接固定的示意和简化图示，
图18是使用弹簧负载的自由空气球的咬接固定的示意和简化图示，
图19是SMA导线的挤压配合的示意和简化图示，
图20是将SMA导线挤压配合到由各向异性蚀刻制作的硅基板中的V凹槽中的示意和简化图示，
图21是将SMA导线挤压配合到弹性可变形结构中的示意和简化图示，
图22是用于机械和电气互连的在基板上具有金属里衬的SMA导线的挤压配合的示意和简化图示，
图23是用于机械和电气互连的SMA导线挤压配合到在基板上具有金属里衬的V凹槽中的示意和简化图示，
图24是用于机械和电气互连的SMA导线挤压配合到在基板上具有金属里衬的弹性可变形结构中的示意和简化图示，
图25是在金属里衬挤压配合结构和SMA导线上使用球结合的附加固定的示意和简化图示，
图26是在直沟槽中SMA导线的粘性固定的示意和简化图示，
图27是在V形状的凹槽中SMA导线的粘性固定的示意和简化图示，
图28是使用第二基板作为夹持支撑，将SMA导线粘性固定在直的（a）和v形状的（b）沟槽中的示意和简化图示，
图29是使用第二基板的基于金属的结合作为夹持支撑的挤压配合结构的示意和简化图示，
图30是导线的咬接固定的示意和简化图示，
图31是使用弹簧负载的导线的咬接固定的示意和简化图示，
图32是使用导线结合器将SMA导线集成的工艺方案，
图33是使用导线结合器将SMA导线集成以及利用活塞将导线挤入的工艺方案。
具体实施方式
现在将参照图1描述本发明，图1示出晶片级集成构思的图示。在一个锚和一个夹持结构的帮助下，SMA导线被机械地固定。每个固定对被放置在晶片边缘的相对侧。
在图1中描述基本的集成构思。SMA导线的集成被分成晶片级集成和芯片级集成。晶片级集成将在硅晶片上的SMA导线的对准和固定相组合。然后可以以芯片级实施最终的机械和电气集成以形成驱动器本身。
图2示出集成流程的截面图。首先，自由空气球由电气放电产生（a）。然后将所述球锚定在其锚定结构中。SMA导线（37.5μm直径）在整个晶片区域上被馈送和导引到其第二固定结构（b）。SMA导线被夹持在硅悬臂中间并最终通过由结合毛细管和高结合力截断所述导线而被切断（c）。
在晶片级上，跨越整个晶片使用在限定位置中的两种不同的机械结构以高放置精度附着SMA导线。如在图1a中示出的，基于球楔（ballwedge）导线结合工艺，产生并且随后在第一集成结构中锚定自由空气球。如在图1b中所示，SMA导线被固定并且可跨越晶片朝向夹持结构被导引，其中SMA导线被机械地附着。这个晶片级集成允许在第二步骤中的也在芯片级上的另一个附着。然而，本发明的重点在于晶片级集成的设计和开发。
使用这个集成构思，整个晶片可以以高放置精确度布有SMA导线。而且使用导线结合器提供集成工艺的高生产能力和高再现性。SMA导线的完全集成在室温下进行，从而避免引起在通常90℃的高温时发生的SMA变形。因此，这使得能够集成预应变的SMA导线。此外，这个集成构思是CMOS兼容的，提供了将微电子器件与微驱动器集成的可能性。
作为实例，示出了可被制作在100mm硅基板上的导线钩住和夹持结构。N.Roxhed等人的出版物：“A method for tapered deep reactive ion etching using a modifiedBosch process”，JMM，vol.17，pp.1087-1092，（2007）示出可以通过一系列各向异性和各向同性DIRE步骤实现两种类型的结构。两种集成结构的蚀刻都在STS ICP蚀刻反应器中进行。
在这个实例中，两种固定结构每种的制作需要一个光刻和DRIE工艺。第一个光刻利用通过旋涂施加的标准光致抗蚀剂来进行。第二个光致抗蚀剂施加通过喷涂稀释的抗蚀剂来进行以确保由第一DRIE工艺生成的深蚀刻结构的完全保护。作为最后步骤，所有光致抗蚀剂残留物通过等离子体灰化被去除。
本发明提出了在图1a和图3中描绘的固定所述导线的始端的锚结构。它由两个功能部件构成，即着落区和锚部件。着落区能够使SMA球下降到锚结构中并且随后使SMA球固定到相邻锚部件中。对于SMA球的适当锚定，蚀刻几何形状至关重要。SMA球的锚定通过锚结构自身的特定底切蚀刻轮廓来实现。首先蚀刻各向异性沟槽，接着钝化垂直侧壁。随后各向同性蚀刻在各向异性蚀刻轮廓下面产生底切。
用于导线末端的硅结构组合两个功能部件，即夹持结构和切断区。图1b和图4描绘了具有一对面对的垂直悬臂的夹持结构。两对面对的垂直悬臂在它们中间夹持SMA导线。第一对固定并且对准SMA导线。第二对稳定SMA导线用以截断。夹持结构的各向异性蚀刻轮廓包含在悬臂的上部分中的小斜面，所述小斜面通过短的各向同性蚀刻实现。如在图4中描绘的，斜面确保了所述SMA导线在夹具中的恒定高度。
使用例如Delvotec 5410的半自动导线结合器来集成所述导线是可能的。这可以与市售的具有90℃的变形温度的预应变NiTi SMA导线一起使用，例如直径为37.5μm的Flexinol®。因为所述导线已经预应变，所以不需要用于预应变所述导线的特殊工具。在图2中描绘的导线集成从通过电气放电引起形成自由空气球开始，所述电气放电在结合毛细管的末端上局部地熔化所述导线。在SMA导线的末端的液态金属卷起并且形成自由空气球。因为在通过辉光放电的快速熔化期间，TiNi合金易于在空气中氧化，所以在氦气氛中实施电子点火（Electrical Flame Off，EFO），参见T.Goryczka 等人的“Characterization ofnitrided/oxidized layers covering NiTi shape memory alloy”, Solid StatePhenomena, vol.54, pp.151-154, (2007)。然后自由空气球被降低到着落区中并且随后被钩到其相邻锚部件中。通过利用导线结合器，SMA导线在晶片上被放置到夹持结构，其中它被推到面对的悬臂对中间。最后，SMA导线通过由结合毛细管和高结合力截断所述导线而被切断。
用于SMA导线的这个集成方法开启了在芯片级上的宽范围的不同集成方法，然后可使用所述集成方法利用例如聚合体固定，或者通过使用也在单个芯片上固定SMA导线的夹持结构来制作高性能驱动器。
图3描绘了通过在随后的三个步骤中组合的各向异性和各向同性的深反应离子蚀刻制作的锚结构。被底切的（平面外）侧壁结构和楔形的（平面内）设计两者都稳妥地将SMA导线和其锚固定在一起。对于不均匀地形成的和/或定尺寸的自由空气球，这种设计是非常能容忍错误的，并且因此确保SMA导线的可靠锚定。
图4是夹持固定的SEM图像，具有对一个夹持特征放大的视图。提出在导线结合器的帮助下，将所述导线推到面对的悬臂对中间。可以使用四个相似的夹具来固定每个导线。
如在图4中描绘的，已经发现具有50×500×220μm的悬臂尺寸的夹持结构最稳定地将SMA导线机械地固定。
所述导线集成的最后步骤是可类似于缝合结合来实施的导线截断。然而，使用非常高的结合力和超声波产生所述导线的直切并且与常规的未变形的导线结合和所述导线到表面的微焊接形成对比，如在图5中描绘的。这也表明依靠传统的导线结合将SMA导线固定是不可行的。
使用高结合力和超声波产生所述导线的直切并且与常规的未变形的导线结合和所述导线到表面的微焊接形成对比，如在图5中示出的。
提出的晶片级集成方法也包括SMA导线在芯片级上的对准。这个集成方法的放置精确度已经利用光学轮廓仪Wyko NT9300分析。如在图6中描绘的，确定相对于理想几何锚对夹具中心导线的面内导线放置偏差以及从所述导线到基板的距离，即芯片级。样品，具有37.5μm的直径的75mm长的SMA导线被集成在100mm硅基板上。如在图6中所示，面内平均偏差是4.19±4.22（σ）μm，具有最大值13.9μm。SMA导线到基板的面外距离平均是15.6±4.5（σ）μm并且最大是23.2μm。对于SMA导线的芯片级固定的设计，这是重要的度量，所述度量可例如在随后的步骤中利用Ni电镀进行，参见D.Clausi等人的“Wafer-level mechanical andelectrical integration of SMA wires to silicon MEMS using electroplating”,MEMS Proc.(2011)。
此外，通过实现简单的驱动器来对锚和夹持结构的机械鲁棒性进行基础评估。这个驱动器基于作为冷态重置的300μm厚的硅悬臂和作为驱动的两个平行集成的75mm长的SMA导线，硅悬臂具有100mm的长度和2mm的宽度。能量输入由加热板提供，在加热板上，驱动器被固定在一侧以增强热接触。
图7a示出驱动器在驱动位置和空闲位置两者中的截面。图7b描绘在半驱动状态中的驱动器以及图7c描绘在完全驱动状态中的驱动器。它揭示两个SMA导线固定元件都承受了由SMA导线产生的力，根据导线数据表，该力是200mN，参见DYNALLOY,Inc.,“Technicalcharacteristics of flexinol actuator wires”,数据表，F1140Rev H,pp.6。所述驱动被执行了几百次而未失败。
图6也示出针对具有75mm长度和37.5μm直径的SMA导线的对准精确度的白光干涉测量数据。如在图中所示的，面外测量（蓝色的直线图）确定在所述导线和基板之间的距离，面内测量（红色的虚线图）确定相对于理想几何锚对夹具中心线的横向导线放置偏差。
为了验证所提出的导线固定方法的机械稳定性，如在图7中所示，已经将两个75mm长的SMA导线平行地集成在具有3×100mm大小的硅芯片上。图7a是截面图；红色的虚线轮廓代表在热状态中的芯片。图7b示出在具有70℃温度的加热板上被稍微驱动的器件的图像，并且图7c示出在90℃时具有增加的驱动的器件。
使用标准导线结合器设备，形状记忆合金导线的晶片级集成已经被成功地演示。即使使用半自动导线结合器进行SMA导线集成，在这个工作中可实现极好的放置准确性。使用全自动导线结合设备以及光学图像识别和对准系统潜在地进一步改进这些结果并且使这些技术的实施能够用于大规模生产。SMA导线的锚定和夹持显示了极好的鲁棒性，所述鲁棒性表明这个集成构思也可应用在芯片级/驱动器级上。
现在将示出用于形状记忆合金导线的机械固定以及用于形状记忆合金导线的电气连接的不同实施例。
所述导线通过导线结合器的结合毛细管被馈送。为了允许对导线的牵拉，所述导线的末端必须被固定在基板上。在这个构思中，所述导线的末端被变形，使得导线末端的直径比结合毛细管和其余导线的直径更大。这允许钩入所述导线末端或者将所述导线挤压到基板中的挤压配合结构中。
图8示出已经关于图1，2和3示出的一个构思。在基板中形成钩入结构，图8a，然后形成自由空气球，图8b，自由空气球被钩入到在基板中的结构中，图8c，并且允许通过结合毛细管牵拉SMA导线，图8d。
如在图9中示意地示出的，另一个构思是使用自由空气球的挤压配合锚定到基板上的挤压配合结构中。SMA导线（901）通过结合毛细管（902）被馈送并且形成自由空气球（903）。在基板（904）中，形成具有小于自由空气球的直径的直径的沟槽（905）（图9a）。自由空气球的直径比结合毛细管的直径更大，这允许将自由空气球挤压到在基板中的沟槽中（图9b）。SMA导线的末端通过将自由空气球挤压配合到基板的沟槽中来被锚定（图9c）。
如在图10中示意地示出的，同样的构思适合于将自由空气球挤压配合到V成形的沟槽中，沟槽如例如在利用特殊工艺蚀刻硅基板时得到。SMA导线（1001）通过结合毛细管（1002）被馈送并且形成自由空气球（1003）。在基板（1004）中，形成V形状的沟槽（1005）（图10a）。自由空气球的直径比结合毛细管的直径更大，这允许将自由空气球挤压到在基板中的沟槽中（图10b）。SMA导线的末端通过将自由空气球挤压配合到基板的沟槽中来被锚定（图10c）。
图11示意地示出挤压配合构思的另一个变型，其中可变形夹持结构形成在允许SMA导线的直径变化的基板中。SMA导线（1101）通过结合毛细管（1102）被馈送并且形成自由空气球（1103）。在基板（1104）中，形成可变形夹持结构（1105）（图11a）。自由空气球的直径比结合毛细管的直径更大，这允许将自由空气球挤压到在基板中的可变形结构中（图11b）。在自由空气球的挤压期间，夹持结构弹性地变形（图11b）并且因而适应于SMA导线的直径的变化并将它们保持在合适位置（图11c）。
在图9到11中示意地示出的所有上面描述的构思可适于使得能够在进行机械固定的同时电接触SMA导线。这允许在转换温度以上SMA导线的简单接触和焦耳加热。图12到14示意地示出该构思。SMA导线（1201，1301，1401）通过结合毛细管（1202，1302，1402）被馈送并且形成自由空气球（1203，1303，1403）。在基板（1204，1304，1404）上形成沟槽（1205，1305）或者可变形夹持结构（1405）。最后，金属膜（1206，1306，1406）被沉积到基板上（图12a，13a，14a）。自由空气球的直径比结合毛细管的直径更大，这允许将自由空气球挤压到在基板中的沟槽中（图12b，13b，14b）。在挤压期间，在SMA上的自然氧化物破碎并且SMA直接与基板上的金属接触。因此，SMA可通过金属膜被电接触（1207，1307，1407）（图12c，13c，14c）。
取代使用如在图9到14中示出的具有和/或不具有金属里衬的挤压配合，在基板中的沟槽可被填充有粘合剂以在沟槽中粘性地锚定自由空气球和所述导线。图15和16示意地示出这个构思，其中图15用于与图9相似的直沟槽以及图16用于与图10相似的V形状的沟槽。SMA导线（1501，1601）通过结合毛细管（1502，1602）被馈送并且形成自由空气球（1503，1603）。在基板（1504，1604）中，形成直的（1505）或者V形状的沟槽（1605），沟槽然后被部分地填充有粘合剂（1506，1606）（图15a，图16a）。自由空气球的直径比结合毛细管的直径更大，这允许将自由空气球挤压到在基板中的沟槽中的粘合剂中（图15b，16b）。自由空气球被嵌入在弯曲（1507，1607）的粘合剂中并因此锚定自由空气球（图15c，16c）。
除了挤压配合和粘性锚定之外，还可制作咬合结构以咬合自由空气球。图17示意地示出这个构思。SMA导线（1701）通过结合毛细管（1702）被馈送并且形成自由空气球（1703）。在基板（1704）中形成沟槽（1706），并且在基板的顶部形成较薄层（1705），该较薄层部分地覆盖沟槽（1706），但在沟槽的中心具有开口，从而形成咬合结构（1707）（图17a）。自由空气球的直径比结合毛细管的直径更大，这允许推动自由空气球穿过顶层（1705）的开口进入基板中的沟槽（图17b）。所述顶层很快恢复（1708）并且将自由空气球保持在适当位置（图17c）。
在图17中示意地示出的构思的变型是在沟槽中提供弹簧，所述弹簧将自由空气球压靠在顶层中的咬接结构。图18示意地示出该构思。SMA导线（1801）通过结合毛细管（1802）被馈送并且形成自由空气球（1803）。在基板（1804）中形成沟槽（1805），并且在基板的顶部形成较薄层（1806），该较薄层部分地覆盖沟槽（1805），但在沟槽的中心具有开口，从而形成咬合结构（1807）（图18a）。在沟槽（1805）的底部中形成弹性可变形的层（1808）。在将自由空气球挤压通过该咬合结构后，自由空气球压缩该可变形层（1809）（图18b）。当去除结合毛细管时，弹性可变形层将自由空气球挤压到咬合结构(1810)中，所述咬合结构足够坚固以承受得住由弹性可变形层产生的力（图18c）。
在用自由空气球将所述导线的末端固定后，所述导线被牵拉通过结合毛细管并且跨过基板到达下一个夹持结构。在这个夹持结构中，所述导线被夹持并且因此在图9到18中示出的所有构思是可改编的。
图19到21示意地示出适应于SMA导线的挤压装配的挤压配合方案。使用导线结合器，SMA导线（1901，2001，2101）被放置在形成于基板（1903，2003，2103）中的沟槽（1902，2002，2102）上，其直径小于SMA导线的直径（图19a，20a，21a）。图19和20示出分别具有直的和V形状的沟槽的挤压装配。图21基于在图11中所示的构思并且以在允许SMA导线的直径变化的基板中的可变形夹持结构（2105）为特征。使用活塞（1904，2004，2104）将所述导线挤压到沟槽和/或可变形夹持结构中，所述活塞例如可以是第二基板，其在晶片结合器中被挤压到所述导线和第二基板上（图19b，20b，21b）。遵循与在图9，10和11中所示的构思相同的原理，所述活塞然后被去除并且所述导线保持在沟槽中（图19c，20c，21c）。
在图19到21中示意地示出的构思可适于使得能够在进行机械固定的同时电接触SMA导线。这允许在转换温度以上SMA导线的简单接触和焦耳加热。图22到24示意地示出该构思。SMA导线（2201，2301，2401）被放置在形成在基板（2203，2303，2403）中并且覆盖有金属里衬（2204，2304，2404）的沟槽（2202，2302，2402）上面。沟槽直径小于SMA导线的直径（图22a，23a，24a）。图22和23分别示出具有直的和V形状的沟槽的挤压装配。图24基于图11和21中示出的构思并且以在允许SMA导线的直径变化的基板中的可变形夹持结构（2407）为特征。使用活塞（2205，2305，2405）将所述导线挤压到沟槽和/或可变形夹持结构中，所述活塞例如可以是第二基板，其在晶片结合器中被挤压到所述导线和第二基板上（图22b，23b，24b）。在挤压期间，在SMA上的自然氧化物破碎并且SMA直接与基板上的金属接触。因此，SMA可通过金属膜被电接触（2206，2306，2406）（图22c，23c，24c）。
在图22到24中示出的在夹持结构上具有金属里衬的构思可通过在如图25中示出的球结合被加强。在图22到24的最终结构上的金属之上，几个自由空气球被结合以机械地支撑将所述导线夹持到夹持结构中。SMA导线（2501）通过结合毛细管（2502）被馈送并且形成自由空气球（2503）（图25a，b，c的左边）。自由空气球被结合到基板（2506）上的被夹持导线（2504）和毗邻的金属里衬（2505）之上（图25b）。然后，使用高结合能量（2507）切断所述导线（图25c）。
与在图15到16中示出的构思相似，在基板中的沟槽可被填充有粘合剂以在沟槽中粘性地锚定所述导线。图26和27示意地示出这个构思，其中图26用于直沟槽以及图27用于V形状的沟槽。SMA导线（2601，2701）被放置在沟槽/凹槽（2602，2702）上面，所述沟槽/凹槽形成在基板（2603，2703）中并且部分地填充有粘合剂（2604，2704）（图26a，27a）。使用活塞（2605，2705）将所述导线挤压到沟槽中的粘合剂中，所述活塞例如可以是第二基板，其在晶片结合器中被挤压到所述导线和第二基板上（图26b，27b）。然后所述导线被嵌入在粘合剂中，所述粘合剂被固化（2606，2706）并因而锚定所述导线（图26c，27c）。
在图26和27中示出的粘性锚定构思可与粘性晶片结合组合以支撑所述导线的夹持。图28示出了该构思，其对于直的和V形状的沟槽两者是相似的。SMA导线（2801）被放置在沟槽/凹槽（2802，2803）上面，所述沟槽/凹槽形成在基板（2804）中并且部分地填充有粘合剂（2804）。使用第二基板（2805），所述导线被挤压到沟槽中的粘合剂中，第二基板覆盖有粘合剂（2806）并且被挤压到所述导线和第一基板（2803）上。然后，所有粘合剂被固化并且所述导线通过顶部上的第二基板和粘合剂两者被锚定。这样的方法对于具有加金属里衬的夹持结构的挤压配合也是可行的。图29示出该构思。所述导线（2901）被放置在第一基板（2904）中的加金属里衬的（2902）沟槽（2903）中。使用第二基板（2905）将所述导线挤压到加金属里衬的沟槽中，第二基板覆盖有金属（2906）并且被挤压到所述导线和第一基板（2904）上。然后，第二基板及其金属被结合到第一基板上的金属。因此，SMA可通过金属膜被电接触，并且所述夹持由结合的第二基板支撑。
与在图17和18中示出的构思相似，可制作咬合结构以咬合所述导线。图30示意地示出这个构思。在基板（3001）中形成沟槽（3002），并且在基板的顶部形成较薄层（3003），该较薄层部分地覆盖沟槽，但在沟槽的中心具有开口，从而形成咬合结构（3004）。SMA导线（3005）被放置在咬合结构上面（图30a）。使用活塞（3006）将所述导线挤压通过顶层的开口到达基板中的沟槽中，所述活塞例如可以是第二基板，其在晶片结合器中被挤压到所述导线和第二基板上（图30b）。所述顶层很快恢复（3007）并且将所述导线保持在适当位置（图30c）。
在图30中示意地示出的构思的变型是在沟槽中提供弹簧，所述弹簧将所述导线压靠在顶层中的咬接结构。图31示意地示出该构思。在该基板（3101）中形成沟槽（3102），并且在基板的顶部形成较薄层（3103），该较薄层部分地覆盖沟槽，但在沟槽的中心具有开口，从而形成咬合结构（3104）。在沟槽的底部形成弹性可变形的层（3105）（图31a）。在利用活塞（3107）将导线（3106）挤压通过咬合结构后，所述导线压缩可变形层（3108）（图31b）。当去除活塞时，弹性变形层将所述导线挤压到咬合结构中，所述咬合结构足够坚固以承受得住由弹性变形层产生的力（图31c）。
图32和33示出用于使用导线结合器将SMA导线集成的工艺方案。在图32中的流程示出其中通过锚定自由空气球来提供第一固定的工艺。然后，所有下面需要的固定通过将利用导线结合器将导线夹持到夹持结构中来执行。在最后的夹持结构成一行之后，通过到基板表面上的高能楔入/缝合结合，所述导线被切断。如果需要，可以重复这些步骤以集成更多导线。如果不需要，所述导线被集成并且可被进一步加工。
在图33中的流程示出其中通过锚定自由空气球来提供第一固定的工艺。然后，所述导线跨越成行的所有夹持结构的上方并且最终通过到基板表面上的高能楔入/缝合结合，所述导线被切断。如果需要，可以重复这些步骤以放置更多导线。如果所有导线在合适位置，使用活塞将它们挤压到下面的夹持结构中。如果所述夹持足够坚固，基板可被进一步加工。如果不需要，在夹持结构中的导线上可放置另外的球结合，或者在挤压期间第二基板可被结合到所述导线和第一基板上。
应该理解到本发明不被其前面描述的和示出的示例性实施例所限制，并且可以在如由所附权利要求限定的本发明的范围内作出修改。

Claims (18)

1.将导线附着到基板的方法，其中所述导线被机械地附着到作为所述基板的一部分的3D结构中，所述基板包括至少一个夹持结构，并且所述方法还包括步骤：
通过在所述导线的一部分与所述3D结构之间产生摩擦力或进行锚定来固定所述导线，以及
通过施加力来截断所述导线，
其中所述导线通过锚定而在第一附着点被机械地附着到锚结构，并且通过在所述导线与所述基板上的所述3D结构之间产生摩擦力而在第二附着点附着到至少一个夹持结构。
2.根据权利要求1的方法，其中所述导线和/或所述夹持结构是可变形的。
3.根据权利要求1的方法，其中该方法还包括步骤：
当使用导线结合器时，通过电气放电在所述导线的一个末端产生自由空气球，以便被所述锚结构锚定，以及
将所述导线的另一末端导引到所述夹持结构，以便所述导线的所述另一末端被夹持在所述夹持结构的至少一对悬臂之间。
4.根据权利要求1的方法，其中所述导线被导线结合器的结合毛细管和结合力截断。
5.根据权利要求1的方法，其中锚定包括钩住、挤压配合或在所述3D结构中固定导线的所述一部分。
6.根据权利要求3的方法，其中所述自由空气球被挤压配合到作为所述3D结构的一部分的可变形结构中。
7.根据权利要求3的方法，其中所述自由空气球被挤压配合到形成为V沟槽的所述3D结构中。
8.根据权利要求3的方法，其中所述自由空气球被利用活塞来挤压配合。
9.根据权利要求3的方法，其中金属膜被沉积到所述3D结构上。
10.根据权利要求6的方法，其中被挤压配合到所述3D结构中的所述自由空气球与附着到导线的一个末端的另一自由空气球结合，该导线由此被截断。
11.根据权利要求3的方法，其中所述自由空气球通过使用粘合剂而被固定到所述3D结构。
12.根据权利要求11的方法，其中所述3D结构形成为V沟槽。
13.根据权利要求3的方法，其中3D结构是咬接结构。
14.根据权利要求13的方法，其中所述咬接结构包括弹簧负载。
15.导线结合器，包括用于馈送导线以便该导线被机械地附着到作为基板的一部分并且包括至少一个夹持结构的3D结构的结合毛细管，并且所述导线结合器被适配为执行根据权利要求1的步骤。
16.根据权利要求1的方法，其中所述导线是SMA导线。
17.包括附着到基板的导线的装置，其中所述导线被配置为机械地附着到所述基板上的3D结构，其中所述基板包括具有至少一个夹持结构的固定对，并且所述导线被配置为至少通过所述固定对而被机械地固定到所述基板并且通过导线结合器的结合毛细管和所施加的力而被截断，
其中所述导线在第一附着点被锚定到锚结构，并且通过在所述基板上产生的摩擦力而在第二附着点附着到至少一个夹持结构。
18.根据权利要求17的装置，其中所述锚结构被锚定在所述导线的一个末端处，该末端具有通过所述导线结合器的电气放电产生的自由空气球，并且所述夹持结构被夹持在位于所述夹持结构的至少一对悬臂之间的所述导线的另一末端处。
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