CN103500765A - 基于砷阀开关的ii类超晶格结构及制备方法 - Google Patents

基于砷阀开关的ii类超晶格结构及制备方法 Download PDF

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CN103500765A
CN103500765A CN201310470180.5A CN201310470180A CN103500765A CN 103500765 A CN103500765 A CN 103500765A CN 201310470180 A CN201310470180 A CN 201310470180A CN 103500765 A CN103500765 A CN 103500765A
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陈建新
王芳芳
徐志成
周易
徐庆庆
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Zhongke aibisaisi (Changzhou) Photoelectric Technology Co.,Ltd.
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Abstract

本发明公开了一种基于砷阀开关的II类超晶格结构及制备方法。与传统的II类超晶格结构相比，原有的二元化合物GaSb和InSb均分别由GaAsSb和InAsSb三元化合物替代。其制备方法是在整个II类超晶格生长过程中，As阀一直处于打开状态，阀位大小与生长InAs层时相同，使得在生长GaSb层和InSb界面层时由于部分As的流出而形成了GaAsSb和InAsSb三元化合物。其特点在于：由于各层中都有共同元素As存在，使得各层的生长温度趋于一致，并使得界面处的互扩散减少。此外，As原子表面活性剂作用，增加了Sb原子的迁移率，降低了Sb团簇的形成几率，减少了材料本身的缺陷，提高了材料性能。

Description

基于砷阀开关的II类超晶格结构及制备方法
技术领域
本发明涉及一种II类超晶格材料，特别涉及一种基于砷阀开关的II类超晶格结构及制备方法，它应用于中、长波红外焦平面探测器。
背景技术
生长在GaSb衬底上的InAs/GaSb II类超晶格是第三代红外焦平面探测器的优选材料，近年来，美国、德国、日本等国都在大力发展基于该II类超晶格的红外探测技术。InAs/GaSb异质材料体系具有十分特殊的能带排列结构，InAs禁带宽度小于InAs/GaSb的价带偏移，因此InAs的导带底在GaSb的价带顶之下，构成II类超晶格。这就导致（1）电子和空穴在空间上是分离的，电子限制在InAs层中，而空穴限制在GaSb层中，其有效禁带宽度为电子微带至重空穴微带的能量差；（2）改变超晶格周期，可有效地调节InAs/GaSb超晶格的有效禁带宽度。InAs/GaSb II类超晶格的优势还在于能吸收正入射光，具有高的量子效率，低的俄歇复合和漏电流，易于实现高的工作温度。此外，成熟的III-V族化合物的分子束外延生长技术为高性能II类超晶格的制备提供了技术支持，采用分子束外延技术制备超晶格可使得超晶格中各膜层材料的生长速率和组分高度可控。
目前InAs/GaSb II类超晶格结构主要包含GaSb层、InAs-on-GaSb界面层、InAs层和GaSb-on-InAs界面层。其中As源和Sb源分别是由As带阀的裂解炉和Sb带阀的裂解炉提供的。生长过程中，除InAs层外，As阀一直处于关闭状态以防As有少量流出而引入一些与As相关的缺陷，降低材料的纯度。但膜层纯度的提高也会给生长带来了一些困难，如（1）GaSb层的生长温度较高，一般在500℃以上，InAs层的生长温度一般在450℃左右，而界面InSb层的生长温度较低，一般在390℃以下，因此要生长一个完整的超晶格，就要兼顾GaSb层、InAs层和界面InSb层的生长温度，给高质量超晶格的制备造成了困难；（2）由于InAs与衬底GaSb之间存在着0.6％的晶格失配，故需要晶格常数比GaSb大的InSb界面层进行应变补偿，而InSb与GaSb之间的晶格失配高达6.3％，因此要生长厚的InSb界面层必会引起更多的缺陷和位错，从而降低材料的质量；（3）由于InAs和GaSb之间没有共同原子，故其界面处的互扩散现象比较严重；（4）Sb的蒸气压较低、迁移率较小，易于形成团簇，而Sb晶格空位又容易被Ga占据，形成双受主Ga反位（GaSb）缺陷；（5）在超晶格的生长过程中，As阀时开时关会造成As压不稳定，致使超晶格材料组分不均匀，质量下降。
发明内容
本发明的目的是提供一种基于砷阀开关的II类超晶格结构及制备方法，解决目前存在以下技术问题：
1.GaSb层生长温度高而界面InSb层生长温度低的问题；
2.生长厚InSb界面层会引起较多缺陷和位错的问题；
3.各膜层界面处互扩散现象严重的技术问题；
4.As阀时开时关会造成As压不稳定，致使超晶格材料组分不均匀的问题。
如附图1所示，本发明的II类超晶格结构为：由衬底自下而上依次为GaAsxSb1-x层（1）、InAsy1Sb1-y1层（2）、InAs层（3）和InAsy2Sb1-y2层（4）。其中：
所述的GaAsxSb1-x层（1）的厚度为1.2nm-3.6nm，组分x为0.01-0.03；
所述的InAsy1Sb1-y1层（2）的厚度为0.15nm-0.25nm，组分y1为0.01-0.3；
所述的InAs层（3）的厚度为2.4nm-4.8nm；
所述的InAsy2Sb1-y2层（4）的厚度为0.15nm-0.25nm，组分y2为0.5-0.99。
具体制备方法步骤如下：
1）将GaSb衬底升温至560℃去除其表面的氧化层；
2）将GaSb衬底降温至400℃至II类超晶格生长温度；
3）将As阀和Sb阀开至II类超晶格生长所用阀位；
4）采用分子束外延方法在GaSb衬底上依次外延GaAsxSb1-x层（1）、InAsy1Sb1-y1层（2）、InAs层（3）和InAsy2Sb1-y2层（4）。
本发明的优点在于：（1）超晶格中各层之间由于有共同的元素As可使界面处互扩散现象减少；（2）As的引入可使得GaSb层的生长温度有所降低而InSb层的生长温度有所提高，从而使整个超晶格中各层的生长温度区间趋于一致；（3）三元化合物InAsSb可使得厚的界面层易于生长；（4）由于As原子的表面活性剂作用，增加了Sb原子的迁移率，从而可降低Sb团簇的形成几率，减少材料本身的缺陷；（5）制备方法不仅避免了外延生长时As阀频繁开关，节省了开关As阀及使As压稳定的时间，还极大地简化了外延生长过程，并节约了材料生长时间。
附图说明：
图1是InAs/GaSb II类超晶格四层结构模型；（1）为GaAsxSb1-x层，（2）为第一个InAsy1Sb1-y1层，（3）为InAs层，（4）为第二个InAsy2Sb1-y2层。
图2是InAs/GaSb II类超晶格材料一个生长周期内快门开关示意图。如图2所示，在InAs/GaSb II类超晶格的一个生长周期内，第一步将Ga、Sb的快门打开，第二步只开Sb快门，第三步只开In快门，第四步将In、As快门打开，第五步只开In快门，第六步只开Sb快门。之后循环往复，直至材料生长结束。在整个超晶格生长过程中，As阀位不变，只有As快门的开关。故第一步形成了GaAsxSb1-x层，第二步和第三步形成了第一个InAsy1Sb1-y1层，第四步形成了InAs层，第五步和第六步形成了第二个InAsy2Sb1-y2层。
具体实施方式
实施例1
根据发明内容，我们制备了一种II类超晶格材料，其具体结构为：
GaAsxSb1-x层（1）的厚度为1.2nm，组分x为0.01；
InAsy1Sb1-y1层（2）的厚度为0.17nm，组分y1为0.1；
InAs层（3）的厚度为2.4nm；
InAsy2Sb1-y2层（4）的厚度为0.17nm，组分y2为0.65。
实施例2
根据发明内容，我们制备了第二种II类超晶格材料，其具体结构为：
GaAsxSb1-x层（1）的厚度为2.1nm，组分x为0.015；
InAsy1Sb1-y1层（2）的厚度为0.21nm，组分y1为0.13；
InAs层（3）的厚度为3.6nm；
InAsy2Sb1-y2层（4）的厚度为0.21nm，组分y2为0.85。
实施例3
根据发明内容，我们制备了第三种II类超晶格材料，其具体结构为：
GaAsxSb1-x层（1）的厚度为1.8nm，组分x为0.02；
InAsy1Sb1-y1层（2）的厚度为0.23nm，组分y1为0.25；
InAs层（3）的厚度为4.8nm；
InAsy2Sb1-y2层（4）的厚度为0.23nm，组分y2为0.9。

Claims (2)

1.一种基于砷阀开关的II类超晶格结构，其结构自下而上依次为GaAsxSb1-x层（1）、InAsy1Sb1-y1层（2）、InAs层（3）和InAsy2Sb1-y2层（4），其特征在于：
所述的GaAsxSb1-x层（1）的厚度为1.2nm-3.6nm，组分x为0.01-0.03；
所述的InAsy1Sb1-y1层（2）的厚度为0.15nm-0.25nm，组分y1为0.01-0.3；
所述的InAs层（3）的厚度为2.4nm-4.8nm；
所述的InAsy2Sb1-y2层（4）的厚度为0.15nm-0.25nm，组分y2为0.5-0.99。
2.一种如权利要求1所述的基于砷阀开关的II类超晶格结构的制备方法，其特征在于包括以下步骤：
1）将GaSb衬底升温至560℃去除其表面的氧化层；
2）将GaSb衬底降温至400℃至II类超晶格生长温度；
3）将As阀和Sb阀开至II类超晶格生长所用阀位；
4）采用分子束外延方法在GaSb衬底上依次外延GaAsxSb1-x层（1）、InAsy1Sb1-y1层（2）、InAs层（3）和InAsy2Sb1-y2层（4）。
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CN107507877A (zh) * 2017-08-23 2017-12-22 苏州焜原光电有限公司 一种中长波红外波段ii类超晶格
JP2019169601A (ja) * 2018-03-23 2019-10-03 旭化成エレクトロニクス株式会社 赤外線発光素子

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US20110037097A1 (en) * 2009-07-17 2011-02-17 Lockheed Martin Corporation Extended wavelength digital alloy nbn detector
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CN105514189A (zh) * 2016-01-13 2016-04-20 中国科学院上海技术物理研究所 一种基于砷化铟衬底的ii类超晶格结构及制备方法
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