CN103500765B - 基于砷阀开关的ii类超晶格结构及制备方法 - Google Patents
基于砷阀开关的ii类超晶格结构及制备方法 Download PDFInfo
- Publication number
- CN103500765B CN103500765B CN201310470180.5A CN201310470180A CN103500765B CN 103500765 B CN103500765 B CN 103500765B CN 201310470180 A CN201310470180 A CN 201310470180A CN 103500765 B CN103500765 B CN 103500765B
- Authority
- CN
- China
- Prior art keywords
- layer
- inas
- class superlattice
- growth
- gasb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 229910052785 arsenic Inorganic materials 0.000 title claims abstract description 10
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 title claims abstract description 7
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910000673 Indium arsenide Inorganic materials 0.000 claims abstract description 50
- 229910005542 GaSb Inorganic materials 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 238000010792 warming Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 17
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 6
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 abstract description 2
- 239000004094 surface-active agent Substances 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 7
- 238000000197 pyrolysis Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Recrystallisation Techniques (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310470180.5A CN103500765B (zh) | 2013-10-10 | 2013-10-10 | 基于砷阀开关的ii类超晶格结构及制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310470180.5A CN103500765B (zh) | 2013-10-10 | 2013-10-10 | 基于砷阀开关的ii类超晶格结构及制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103500765A CN103500765A (zh) | 2014-01-08 |
CN103500765B true CN103500765B (zh) | 2016-01-13 |
Family
ID=49865953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310470180.5A Active CN103500765B (zh) | 2013-10-10 | 2013-10-10 | 基于砷阀开关的ii类超晶格结构及制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103500765B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107507877A (zh) * | 2017-08-23 | 2017-12-22 | 苏州焜原光电有限公司 | 一种中长波红外波段ii类超晶格 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105514189A (zh) * | 2016-01-13 | 2016-04-20 | 中国科学院上海技术物理研究所 | 一种基于砷化铟衬底的ii类超晶格结构及制备方法 |
CN105789355A (zh) * | 2016-04-19 | 2016-07-20 | 中国科学院上海技术物理研究所 | 一种砷化铟基ii类超晶格结构及制备方法 |
CN105932106B (zh) * | 2016-05-26 | 2018-01-02 | 中国科学院半导体研究所 | InAs/InSb/GaSb/InSbⅡ类超晶格材料制造方法及产品 |
JP7096684B2 (ja) * | 2018-03-23 | 2022-07-06 | 旭化成エレクトロニクス株式会社 | 赤外線発光素子 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102436532A (zh) * | 2011-11-28 | 2012-05-02 | 华北电力大学 | InAs/GaSb超晶格电子结构的设计方法 |
CN102544229A (zh) * | 2012-02-17 | 2012-07-04 | 中国科学院半导体研究所 | 甚长波InAs/GaSb二类超晶格红外探测器材料的制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6911716B2 (en) * | 2002-09-09 | 2005-06-28 | Lucent Technologies, Inc. | Bipolar transistors with vertical structures |
US8674406B2 (en) * | 2009-07-17 | 2014-03-18 | Lockheed Martin Corp. | Extended wavelength digital alloy NBN detector |
-
2013
- 2013-10-10 CN CN201310470180.5A patent/CN103500765B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102436532A (zh) * | 2011-11-28 | 2012-05-02 | 华北电力大学 | InAs/GaSb超晶格电子结构的设计方法 |
CN102544229A (zh) * | 2012-02-17 | 2012-07-04 | 中国科学院半导体研究所 | 甚长波InAs/GaSb二类超晶格红外探测器材料的制备方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107507877A (zh) * | 2017-08-23 | 2017-12-22 | 苏州焜原光电有限公司 | 一种中长波红外波段ii类超晶格 |
Also Published As
Publication number | Publication date |
---|---|
CN103500765A (zh) | 2014-01-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103500765B (zh) | 基于砷阀开关的ii类超晶格结构及制备方法 | |
Sayed et al. | Quantum well solar cells: principles, recent progress, and potential | |
CN101814429B (zh) | 包含超晶格隔离层的大晶格失配外延材料缓冲层结构及其制备 | |
CN103233271B (zh) | 一种在GaAs衬底上外延生长InAs/GaSb二类超晶格的方法 | |
CN105448675B (zh) | 一种GaAs/Si外延材料的MOCVD制备方法 | |
US9890472B2 (en) | Monolithic integrated lattice mismatched crystal template and preparation method thereof | |
CN105932106A (zh) | InAs/InSb/GaSb/InSbⅡ类超晶格材料制造方法及产品 | |
CN102820368A (zh) | 三族氮化物基光电晶体管探测器件及其制作方法 | |
CN102254954A (zh) | 含有数字合金位错隔离层的大失配外延缓冲层结构及制备 | |
CN106711252A (zh) | 一种包含缓冲层的外延结构及其制备方法 | |
CN114197055A (zh) | InAs/InSb应变超晶格材料及其制备方法 | |
CN205542814U (zh) | 一种基于砷化铟衬底的ii类超晶格结构 | |
Wang | Lattice engineering: technology and applications | |
CN103066157B (zh) | 一种降低InP基InGaAs异变材料表面粗糙度的方法 | |
CN103151710B (zh) | GaAs基含B高应变量子阱及其制备方法、半导体激光器 | |
CN106409937A (zh) | 一种砷化铟基ii类超晶格结构及制备方法 | |
CN103367567B (zh) | 基于铋元素的非矩形iii-v族半导体量子阱的制备方法 | |
CN105185846A (zh) | PBN型InGaAs红外探测器 | |
CN104377279A (zh) | 大失配体系硅基无位错异质外延方法 | |
CN111223948A (zh) | 一种基于锑快门开关的无失配ii类超晶格结构及制备方法 | |
CN103820848A (zh) | 一种在InP衬底上外延生长II型GaSb/InGaAs量子点的方法 | |
CN211208457U (zh) | 一种基于锑快门开关的无失配ii类超晶格结构 | |
CN104518054B (zh) | 在硅衬底上变温生长InAs/GaSb超晶格红外探测器GaSb缓冲层的方法 | |
CN102140695A (zh) | 一种生长高铟组分铟镓砷的方法 | |
CN107611221A (zh) | 提高锑化物基ⅱ类超晶格材料质量的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210119 Address after: 213022 No.23, middle Huashan Road, Xinbei District, Changzhou City, Jiangsu Province Patentee after: Changzhou Zhongke Decai Technology Development Co.,Ltd. Address before: 200083 No. 500, Yutian Road, Shanghai, Hongkou District Patentee before: Shanghai Institute of Technical Physics, Chinese Academy of Sciences |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210622 Address after: 23 Huashan Middle Road, Xinbei District, Changzhou City, Jiangsu Province 213000 Patentee after: Zhongke aibisaisi (Changzhou) Photoelectric Technology Co.,Ltd. Address before: 213022 No.23, middle Huashan Road, Xinbei District, Changzhou City, Jiangsu Province Patentee before: Changzhou Zhongke Decai Technology Development Co.,Ltd. |