CN105514189A - 一种基于砷化铟衬底的ii类超晶格结构及制备方法 - Google Patents

一种基于砷化铟衬底的ii类超晶格结构及制备方法 Download PDF

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CN105514189A
CN105514189A CN201610020793.2A CN201610020793A CN105514189A CN 105514189 A CN105514189 A CN 105514189A CN 201610020793 A CN201610020793 A CN 201610020793A CN 105514189 A CN105514189 A CN 105514189A
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王芳芳
陈建新
徐志成
周易
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Shanghai Institute of Technical Physics of CAS
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Abstract

本发明公开了一种基于砷化铟衬底的II类超晶格结构及制备方法。其结构自下而上依次为GaAsxSb1-x层和InAs层。与传统的II类超晶格结构相比，其特点在于：(1)原有的GaSb衬底被InAs衬底替代，使得超晶格生长温度大幅度提高，生长温度的提高有利于表面原子扩散长度的增加，因此更有利于材料的二维生长和材料缺陷密度的降低；(2)原有的四层结构生长模式(InAs/InSb/GaSb/InSb)被两层结构生长模式(InAs/GaAsSb)替代，结构更加简单,更有利于实现高质量超晶格的生长；(3)InAs层厚度的变化对InAs基II类超晶格的失配影响较小，极大地降低了长波、尤其是甚长波材料的生长难度，更易于提高材料的性能和质量。

Description

一种基于砷化铟衬底的II类超晶格结构及制备方法
技术领域
本发明涉及一种II类超晶格材料，特别涉及一种基于砷化铟衬底的新型II类超晶格结构及制备方法，它应用于长波、甚长波红外焦平面探测器。
背景技术
InAs/GaSbII类超晶格材料是第三代红外焦平面探测器的优选材料，近年来，美国、德国、日本等国都在大力发展基于该II类超晶格的红外探测技术。InAs/GaSb异质材料体系具有十分特殊的能带排列结构，InAs禁带宽度小于InAs/GaSb的价带偏移，因此InAs的导带底在GaSb的价带顶之下，构成II类超晶格。这就导致(1)电子和空穴在空间上是分离的，电子限制在InAs层中，而空穴限制在GaSb层中，其有效禁带宽度为电子微带至重空穴微带的能量差；(2)改变超晶格周期厚度，可有效地调节InAs/GaSb超晶格的有效禁带宽度。InAs/GaSbII类超晶格的优势还在于能吸收正入射光，具有高的量子效率、低的俄歇复合和漏电流，易于实现高的工作温度。此外，成熟的III-V族化合物的分子束外延生长技术为高性能II类超晶格的制备提供了技术支持，采用分子束外延技术制备超晶格可使得超晶格中各膜层材料的生长速率和组分高度可控。
目前GaSb基InAs/GaSbII类超晶格结构主要包含GaSb层、InAs-on-GaSb界面层、InAs层和GaSb-on-InAs界面层。其中As源和Sb源分别是由As带阀的裂解炉和Sb带阀的裂解炉提供的。但(1)由于InAs与衬底GaSb之间存在着0.6％的晶格失配，故需要晶格常数比GaSb大的InSb界面层进行应变补偿，而InSb与GaSb之间的晶格失配高达6.3％，因此要生长厚的InSb界面层必会引起更多的缺陷和位错，从而降低材料的质量；(2)InAs/GaSb为应变超晶格,对于实现光学厚度的吸收层难度很大；(3)由于InAs和GaSb之间没有共同原子，故其界面处的互扩散现象比较严重；(4)Sb的蒸气压较低、迁移率较小，易于形成团簇，而Sb晶格空位又容易被Ga占据，形成双受主Ga反位(GaSb)缺陷。
发明内容
本发明的目的是提供一种基于砷化铟衬底的新型InAs/GaAsSbII类超晶格结构，解决目前存在的以下技术问题：
1.由于InSb界面补偿层存在导致的超晶格生长温度低的问题；
2.InAs层厚度增加需要厚的InSb层进行补偿，而生长厚InSb界面层会引起较多缺陷和位错的问题；
3.成千上万个界面层极大增加了超晶格生长难度的问题；
4.各膜层界面处互扩散现象严重的技术问题。
如附图1所示，本发明的II类超晶格结构为：由InAs衬底自下而上依次为GaAsxSb1-x层1和InAs层2。其中：
所述的GaAsxSb1-x层1的厚度为2.1nm-3.6nm，组分x为0.0-0.5；
所述的InAs层2的厚度为2.1nm-10.5nm；
具体制备方法步骤如下：
1)将In炉和Ga炉调至所需生长温度；
2)将InAs衬底装入分子束外延真空系统；
3)将InAs衬底温度升至InAs/GaAsSbII类超晶格生长温度；
4)将As阀和Sb阀开至II类超晶格生长所用阀位；
5)采用分子束外延方法在InAs衬底上依次外延GaAsxSb1-x层1和InAs层2。
本发明的优点在于：(1)InAs衬底替代GaSb衬底使得超晶格的生长温度大幅度提高，生长温度的提高有利于表面原子扩散长度的提高，因此更有利于材料的二维生长和材料缺陷密度的降低；(2)InAs/GaAsSb两层超晶格结构替代InAs/InSb/GaSb/InSb四层超晶格结构，结构更加简单,更有利于实现高质量超晶格的生长；(3)InAs层厚度的变化对InAs基II类超晶格的失配没有影响，这一点极大地降低了长波、尤其是甚长波材料的生长难；度(4)GaAsSb与InAs衬底晶格匹配,因此InAs/GaAsSb是晶格匹配的超晶格结构,而目前通用的InAs/GaSb超晶格是应变材料,晶格匹配材料更易于提高材料的性能和质量；(5)As原子表面活性剂作用，增加了Sb原子的迁移率，降低了Sb团簇的形成几率，减少了材料本身的缺陷，提高了材料性能。
附图说明：
图1是基于InAs衬底的新型InAs/GaAsSbII类超晶格两层结构模型：(1)为GaAsxSb1-x层，(2)为InAs层。
图2是InAs基InAs/GaAsSbII类超晶格材料一个生长周期内快门开关示意图。如图2所示，在InAs/GaAsSbII类超晶格的一个生长周期内，第一步将Ga、Sb的快门打开，第二步将Ga、Sb快门关闭，将In、As快门打开。之后循环往复，直至材料生长结束。在整个超晶格生长过程中，As阀位不变，只有As快门的开关。故第一步形成了GaAsxSb1-x层，第二步形成了InAs层。
具体实施方式
实施例1
根据发明内容，我们制备了第一种II类超晶格材料，其具体结构为：
GaAsxSb1-x层1的厚度为2.1nm，组分x为0.0；
InAs层2的厚度为2.1nm；
实施例2
根据发明内容，我们制备了第二种II类超晶格材料，其具体结构为：
GaAsxSb1-x层1的厚度为2.7nm，组分x为0.2；
InAs层2的厚度为6.6nm；
实施例3
根据发明内容，我们制备了第三种II类超晶格材料，其具体结构为：
GaAsxSb1-x层1的厚度为3.6nm，组分x为0.5；
InAs层2的厚度为10.5nm。

Claims (2)

1.一种基于砷化铟衬底的II类超晶格结构，其结构自下而上依次为GaAsxSb1-x层(1)和InAs层(2)，其特征在于：
所述的GaAsxSb1-x层(1)的厚度为2.1nm-3.6nm，组分x为0.0-0.5；
所述的InAs层(2)的厚度为2.1nm-10.5nm。
2.一种制备如权利要求1所述的一种基于砷化铟衬底的II类超晶格结构的方法，其特征在于包括以下步骤：
1)将In炉和Ga炉调至所需生长温度；
2)将InAs衬底装入分子束外延真空系统；
3)将InAs衬底温度升至InAs/GaAsSbII类超晶格生长温度；
4)将As阀和Sb阀开至II类超晶格生长所用阀位；
5)采用分子束外延方法在InAs衬底上依次外延GaAsxSb1-x层(1)和InAs层(2)。
CN201610020793.2A 2016-01-13 2016-01-13 一种基于砷化铟衬底的ii类超晶格结构及制备方法 Pending CN105514189A (zh)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102509700A (zh) * 2011-12-21 2012-06-20 华北电力大学 InAs/GaAsSb量子点的分子束外延生长方法
CN103500765A (zh) * 2013-10-10 2014-01-08 中国科学院上海技术物理研究所 基于砷阀开关的ii类超晶格结构及制备方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102509700A (zh) * 2011-12-21 2012-06-20 华北电力大学 InAs/GaAsSb量子点的分子束外延生长方法
CN103500765A (zh) * 2013-10-10 2014-01-08 中国科学院上海技术物理研究所 基于砷阀开关的ii类超晶格结构及制备方法

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