CN111223948A - 一种基于锑快门开关的无失配ii类超晶格结构及制备方法 - Google Patents

一种基于锑快门开关的无失配ii类超晶格结构及制备方法 Download PDF

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CN111223948A
CN111223948A CN202010126548.6A CN202010126548A CN111223948A CN 111223948 A CN111223948 A CN 111223948A CN 202010126548 A CN202010126548 A CN 202010126548A CN 111223948 A CN111223948 A CN 111223948A
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徐志成
朱艺红
梁钊铭
陈凯豪
陈建新
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Abstract

本发明公开了一种基于锑快门开关的无失配II类超晶格结构及制备方法。其单周期结构包括GaSb层，InAs层和InAsSb界面层三层结构。其制备方法是在II类超晶格周期性结构生长过程中，GaSb生长后直接生长InAs层，InAs生长后，打开Sb快门，使得Sb和InAs层中的As进行元素置换，从而形成InAsSb界面层。其特点在于：由于取消了InSb界面层的直接生长，仅在InAs生长后通过引入Sb浸润形成InAsSb界面层，既满足了应力补偿的需求，又简化了界面制备工艺难度，此外，避免了大失配InSb界面直接生长时引入的岛装结构缺陷，提高了材料性能。

Description

一种基于锑快门开关的无失配II类超晶格结构及制备方法
技术领域
本发明涉及一种超晶格材料，特别涉及一种基于锑快门开关的无失配II类超晶格结构及制备方法，它应用于红外焦平面探测器。
背景技术
20世纪70年代初，IBM实验室的科学家L.Esaki和Sakaki提出了InAs/GaSbⅡ类超晶格的概念，接着，在80年代末期，Smith和Maihiot提出了InAs/GaSbⅡ类超晶格可以应用于红外探测技术的设想。InAs/GaSb II类超晶格通过改变InAs和GaSb层厚，可以实现探测波长从3μm到30μm的调控，是新一代高性能红外探测器制备的优选材料体系。基于超晶格在红外探测器应用方面的诸多理论优势及特点，国内外研究机构在II类超晶格材料物理特性、材料生长技术、器件制备技术等方面开展了大量的研究工作。从90年代材料生长技术的研究和材料质量的提高到2000年左右具有器件质量的外延材料的成功制备，从单元器件的获得到21世纪初陆续出现的焦平面探测器以及各种势垒结构器件和双色、多色探测器的研制，InAs/GaSb超晶格红外探测技术得到了长足的发展。
目前高质量的InAs/GaSb II类超晶格材料通常生长在GaSb衬底上，由于InAs与衬底GaSb之间存在着0.6％的晶格失配，为了获得波长级厚度的超晶格材料，需要生长晶格常数比GaSb大的InSb界面层进行应变补偿，通常情况下InAs/GaSb II类超晶格结构主要包含GaSb层、InAs-on-GaSb界面层、InAs层和GaSb-on-InAs界面层四层结构，其中InAs-on-GaSb界面和GaSb-on-InAs界面是由生长的InSb界面层构成，此方法解决了InAs/GaSb超晶格与衬底的晶格不匹配问题，不过通过该方法获得无失配材料为超晶格的生长制备带来了一些困难，如(1)由于InSb与GaSb之间的晶格失配高达6.3％，当直接在GaSb或InAs上外延InSb界面层时，其将以岛状结构进行生长，增加了超晶格材料的表面粗糙度，随着外延材料厚度的增加材料表面将越来越粗糙，严重制约了超晶格红外探测材料外延层厚度，制约了红外探测器量子效率的提高。(2)为了外延生长InSb界面层，不仅需要严格控制In、As、Ga、Sb四种元素的快门开关时间，还需要对界面处的快门开关次第顺序进行精心的设计，增加了超晶格材料MBE生长工艺的复杂度，同时过于频繁的快门开关增加了表面点缺陷引入的几率。(3)由于InSb与GaSb之间晶格失配大，因此在外延生长InSb界面层时非常容易引入缺陷和位错，降低了材料的晶体质量。(4)InAs生长结束后，由于As较高的饱和蒸气压，MBE腔体内残余的As会进入GaSb层中形成GaAsSb，增加了超晶格材料与衬底的失配度。
发明内容
本发明的目的是提供一种基于锑快门开关的无失配II类超晶格结构及制备方法，解决目前存在以下技术问题：
1.大失配InSb界面层外延生长时岛状结构引起表面粗糙的问题；
2.InSb界面层直接外延生长时工艺复杂的问题；
3.InSb界面层直接外延生长时易引入缺陷和位错的问题；
4.InAs生长结束后As背景压高的问题；
如附图1所示，本发明的II类超晶格结构为：由衬底自下而上依次为GaSb层1、InAs层2和InAsxSb1-x层3。其中：
所述的GaSb层1的厚度为1.05nm-2.4nm；
所述的InAs层2的厚度为1.2nm-3.0nm；
所述的InAsxSb1-x层3的厚度为0.3nm，组分x为0.01-0.5；
具体制备方法步骤如下：
1)将GaSb衬底升温至脱氧温度，并且在Sb束流保护下去除其表面的氧化层，脱氧温度560℃至580℃之间，Sb束流不小于1×10-6Torr；
2)将GaSb衬底降温至II类超晶格生长温度，生长温度范围395℃至405℃之间；
3)将As/In和Sb/Ga生长束流比设定至II类超晶格生长所用范围；
4)采用分子束外延方法在GaSb衬底上生长InAs/GaSb II类超晶格，第一步将Ga、Sb的快门打开外延GaSb层1，第二步将In、As快门打开外延InAs层2，第三步只打开Sb快门，引入Sb束流浸润1-6s，通过与InAs层中的As进行元素置换形成InAsxSb1-x层3。之后循环往复，直至材料生长结束。
本发明的优点在于：(1)取消了GaSb之后的InSb界面层，并且InAs生长结束后仅通过打开Sb快门束流浸润形成InAsSb界面层，极大地简化了II类超晶格材料界面制备的工艺步骤，降低了无失配超晶格材料快门开关控制的复杂度，降低了因快门频繁开关导致的表面点缺陷增加的问题；(2)通过Sb束流浸润以元素置换的形式形成InAsSb界面层，避免了因InSb界面层直接外延生长引起的岛状结构生长问题，降低了超晶格材料的表面粗糙度；(3)避免了InSb界面直接外延生长导致的界面缺陷和位错；(4)InAs层之后的Sb束流浸润降低了As进入GaSb层的几率，提高了材料的纯度。
附图说明：
图1是InAs/GaSb II类超晶格三层结构模型；1为GaSb层，2为InAs层，3为InAsxSb1-x层。
图2是InAs/GaSb II类超晶格材料一个生长周期内快门开关次第顺序示意图。
具体实施方式
实施例1
根据发明内容，我们制备了一种II类超晶格材料，其具体结构为：
GaSb层1的厚度为1.05nm；
InAs层2的厚度为2.45nm；
InAsxSb1-x层3的厚度为0.3nm，组分x为0.20；
其具体制备方法为：
1)将GaSb衬底升温至脱氧温度，并且在Sb束流保护下去除其表面的氧化层，脱氧温度560℃，Sb束流为2×10-6Torr；
2)将GaSb衬底降温至II类超晶格生长温度395℃；
3)将As/In和Sb/Ga生长束流比分别设定至为4和5；
4)采用分子束外延方法在GaSb衬底上生长InAs/GaSb II类超晶格，第一步将Ga、Sb的快门打开外延GaSb层1，第二步将In、As快门打开外延InAs层2，第三步只打开Sb快门，引入Sb束流浸润3s，通过与InAs层中的As进行元素置换形成InAsxSb1-x层3。之后循环往复，直至材料生长结束。
实施例2
根据发明内容，我们制备了一种II类超晶格材料，其具体结构为：
GaSb层1的厚度为2.1nm；
InAs层2的厚度为1.2nm；
InAsxSb1-x层3的厚度为0.3nm，组分x为0.39，Sb浸润时间1s；
其具体制备方法为：
1)将GaSb衬底升温至脱氧温度，并且在Sb束流保护下去除其表面的氧化层，脱氧温度570℃，Sb束流为2×10-6Torr；
2)将GaSb衬底降温至II类超晶格生长温度400℃；
3)将As/In和Sb/Ga生长束流比分别设定至为4和5；
4)采用分子束外延方法在GaSb衬底上生长InAs/GaSb II类超晶格，第一步将Ga、Sb的快门打开外延GaSb层1，第二步将In、As快门打开外延InAs层2，第三步只打开Sb快门，引入Sb束流浸润1s，通过与InAs层中的As进行元素置换形成InAsxSb1-x层3。之后循环往复，直至材料生长结束。
实施例3
根据发明内容，我们制备了第三种II类超晶格材料，其具体结构为：
GaSb层1的厚度为2.4nm；
InAs层2的厚度为3.0nm；
InAsxSb1-x层3的厚度为0.3nm，组分x为0.02；
其具体制备方法为：
1)将GaSb衬底升温至脱氧温度，并且在Sb束流保护下去除其表面的氧化层，脱氧温度580℃，Sb束流为2×10-6Torr；
2)将GaSb衬底降温至II类超晶格生长温度405℃；
3)将As/In和Sb/Ga生长束流比分别设定至为4和5；
4)采用分子束外延方法在GaSb衬底上生长InAs/GaSb II类超晶格，第一步将Ga、Sb的快门打开外延GaSb层1，第二步将In、As快门打开外延InAs层2，第三步只打开Sb快门，引入Sb束流浸润6s，通过与InAs层中的As进行元素置换形成InAsxSb1-x层3。之后循环往复，直至材料生长结束。

Claims (2)

1.一种基于锑快门开关的无失配II类超晶格结构，其特征在于：
所述的超晶格结构为：由衬底自下而上依次为GaSb层(1)、InAs层(2)和InAsxSb1-x层(3)；
所述的GaSb层(1)的厚度为1.05nm-2.4nm；
所述的InAs层(2)的厚度为1.2nm-3.0nm；
所述的InAsxSb1-x层(3)的厚度为0.3nm，组分x为0.01-0.5。
2.一种如权利要求1所述的基于锑快门开关的无失配II类超晶格结构的制备方法，其特征在于包括以下步骤：
1)将GaSb衬底升温至脱氧温度，并且在Sb束流保护下去除其表面的氧化层；
2)将GaSb衬底降温至II类超晶格生长温度；
3)将As/In和Sb/Ga生长束流比设定至II类超晶格生长所用范围；
4)采用分子束外延方法在GaSb衬底上依次外延GaSb层(1)和InAs层(2)，然后打开Sb快门浸润1-6秒，形成InAsxSb1-x层(3)。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117293229A (zh) * 2023-11-23 2023-12-26 苏州焜原光电有限公司 一种超晶格材料生长界面控制方法、加工设备及探测器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117293229A (zh) * 2023-11-23 2023-12-26 苏州焜原光电有限公司 一种超晶格材料生长界面控制方法、加工设备及探测器
CN117293229B (zh) * 2023-11-23 2024-01-26 苏州焜原光电有限公司 一种超晶格材料生长界面控制方法、加工设备及探测器

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