CN104319307B - PNIN型InGaAs红外探测器 - Google Patents

PNIN型InGaAs红外探测器 Download PDF

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CN104319307B
CN104319307B CN201410508495.9A CN201410508495A CN104319307B CN 104319307 B CN104319307 B CN 104319307B CN 201410508495 A CN201410508495 A CN 201410508495A CN 104319307 B CN104319307 B CN 104319307B
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张志伟
缪国庆
宋航
蒋红
黎大兵
孙晓娟
陈仁
陈一仁
李志明
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

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Abstract

本发明提供一种PNIN型InGaAs红外探测器，涉及光电子材料与器件的应用领域。PNIN型InGaAs红外探测器，该探测器是依次包括衬底、缓冲层、扩展波长的InGaAs吸收层、n型插入层和盖层的PNIN型探测器结构；其中，所述的n型插入层的厚度为50nm～150nm，其组分与所述扩展波长的InGaAs吸收层的组分相同。本发明的红外探测器增加的n型插入层能够通过产生带阶，抑制载流子的输运，导致暗电流降低，进而提高红外探测器的光电性能。同时降低了对InGaAs材料外延生长的要求，并可在更广泛的波长范围工作。本发明的红外探测器适用于背面进光及倒扣封装结构，具有很好的通用性。

Description

PNIN型InGaAs红外探测器
技术领域
本发明涉及光电子材料与器件的应用领域，具体涉及一种PNIN型InGaAs红外探测器。
背景技术
目前在InGaAs红外探测器结构设计中，特别是半导体光伏型红外探测器中，都采用PIN结构。但随着材料制备工艺和器件结构设计的迅速发展，人们渴望发展新型红外探测器，以改善目前光电子器件的性能。特别是对于空间遥感用探测器来说，急需设计出可以有效抑制器件的暗电流噪声并提高探测范围的红外探测器件结构。
研究发现由于InGaAs材料为全组分直接带隙材料，通过提高In组分，可有效扩展探测器的应用范围。但提高In组分同时必然导致InGaAs材料与衬底产生晶格失配，而当失配较大时则就会引起位错缺陷，降低InGaAs外延材料的质量，导致探测器性能下降。因此，如果希望得到高质量的InGaAs材料，需要在衬底与吸收层间生长适当的缓冲层，以降低吸收层中的缺陷密度。
为了减少衬底与吸收层之间的晶格失配带来的位错缺陷，目前主要采用在两层间插入组分渐变(或跃变)的缓冲层的方法。采用该技术可有效抑制位错，改善吸收层的质量，从而使探测器性能得到改善，但该技术需要生长非常厚的缓冲层后才能生长所需要组分的吸收层。此外，由于InGaAs缓冲层是不透明的，对于常采用背面进光及倒扣封装方案的阵列及焦平面探测器而言，这种缓冲层结构就不适合。而当在衬底上生长InAsP缓冲层材料时，由于临界厚度较小，即在外延生长过程中，外延层内的应变释放很快，在较小厚度范围内即可以获得很高的弛豫度，这有望提高在其上生长的InGaAs吸收层材料质量，获得低缺陷密度的光吸收层材料。而InAlAs材料与InGaAs材料十分相似，具有增加In的组分值则其晶格常数相应增加并保持直接带隙的特点。InAlAs材料对于所探测的光波长透明，有助于提高量子效率，同时也有利于减小表面复合，改善暗电流特性。因此在正面进光时可采用宽禁带InAlAs材料作盖层。
发明内容
本发明的目的在于针对现有InGaAs红外探测器存在的缺陷，提供一种能够显著降低暗电流并扩展探测范围的PNIN型InGaAs红外探测器。
为了实现上述目的，本发明的技术方案具体如下：
一种PNIN型InGaAs红外探测器，该探测器是依次包括衬底、缓冲层、扩展波长的InGaAs吸收层、n型插入层和盖层的PNIN型探测器结构；
其中，所述的n型插入层的厚度为50nm～150nm，其组分与所述扩展波长的InGaAs吸收层的组分相同。
在上述技术方案中，所述衬底为高掺杂的n型InP或n型GaAs单晶衬底。
在上述技术方案中，所述缓冲层是线性渐变组分的掺Si的InAsP材料或与吸收层晶格匹配的固定组分的掺Si的InAsP材料。
在上述技术方案中，所述扩展波长的InGaAs吸收层的组分具体为InxGa1-xAs，其中x的范围为0.53<x<1。
在上述技术方案中，所述盖层是与扩展波长的InGaAs吸收层晶格匹配的掺Be的p型InAlAs或p型InAsP材料。
本发明的有益效果是：
本发明提供的PNIN型InGaAs红外探测器是在现有InGaAs红外探测器结构的吸收层和盖层之间增加了一层厚度为50nm～150nm的n型插入层，其组分与所述扩展波长的InGaAs吸收层的组分相同。增加的n型插入层能够通过产生带阶，抑制载流子的输运，导致暗电流降低，进而提高红外探测器的光电性能。同时降低了对InGaAs材料外延生长的要求，并可在更广泛的波长范围工作。
本发明提供的PNIN型InGaAs红外探测器既能满足正面进光要求，也能适用于背面进光及倒扣封装结构，具有很好的通用性。本发明实现了对InGaAs红外探测器的暗电流显著抑制及探测范围的扩展，从而实现对探测器性能的提高。
附图说明
下面结合附图和具体实施方式对本发明作进一步详细说明。
图1为本发明的PNIN型InGaAs红外探测器结构示意图。
具体实施方式
本发明的发明思想为：本发明是为提高InGaAs红外探测器的光电性能，提供一种既能够拓展探测器的应用范围，又能对器件的暗电流显著抑制并保持良好光电转换效率的新型探测器结构。采用高掺杂的n型InP或n型GaAs单晶衬底，扩展波长的InGaAs材料作为吸收层，n型InGaAs作为插入层，p型InAlAs或p型InAsP作为盖层。在n型InP或n型GaAs单晶衬底上利用两步法生长一层掺Si的InAsP材料作为缓冲层，然后生长一层低掺杂、扩展波长的InGaAs光吸收层材料，继续再生长一层n型高掺杂的InGaAs插入层材料，最后在其上生长一层掺Be的p型InAlAs或p型InAsP盖层材料，构成PNIN结构，这样可以减少由于晶格失配引起的缺陷。此外，利用n型插入层产生带阶来抑制载流子的输运，导致暗电流降低，进而提高红外探测器的光电性能。综上所述，采用该结构制备的InGaAs红外探测器性能将明显改善。
下面结合附图对本发明做以详细说明。
实施例1
结合图1说明本实施例，一种截止波长为2.6μm的PNIN型InGaAs红外探测器，其结构为：在n型InP衬底上依次生长厚度约为1μm、掺杂浓度为2×1018cm-3的n型InAs0.60P0.40缓冲层，继续生长厚度为3μm、掺杂浓度为8×1016cm-3的n型In0.82Ga0.18As吸收层，再生长厚度为100nm、掺杂浓度为5×1017cm-3的n型In0.82Ga0.18As插入层，最后生长厚度为1μm、掺杂浓度为2×1018cm-3的p型In0.82Al0.18As盖层，形成PNIN探测器结构。
本实施例首先在n型InP衬底上采用MOCVD系统使用两步法生长掺Si的InAs0.60P0.40缓冲层，先在温度为450℃时生长一层约为1μm的InAs0.60P0.40，然后升高温度至580℃，在升温过程中缓冲层InAs0.60P0.40退火重结晶，释放由晶格失配所造成的应力，变成下一步生长的界面，在550℃恒温3～5分钟，然后继续生长一层3μm低掺杂n型扩展波长的In0.82Ga0.18As吸收层，再继续生长一层100nm高掺杂n型In0.82Ga0.18As插入层，最后通过生长1μm掺Be的In0.82Al0.18As盖层，形成PNIN探测器结构。
实施例2
一种截止波长为2.6μm的PNIN型InGaAs红外探测器，其结构为：在n型GaAs衬底上依次生长厚度约为1μm、掺杂浓度为2×1018cm-3的n型InAs0.60P0.40缓冲层，继续生长厚度为3μm、掺杂浓度为8×1016cm-3的n型In0.82Ga0.18As吸收层，再生长厚度为150nm、掺杂浓度为5×1017cm-3的n型In0.82Ga0.18As插入层，最后生长厚度为1μm、掺杂浓度为2×1018cm-3的p型In0.82Al0.18As盖层，形成PNIN探测器结构。
本实施例首先在n型GaAs衬底上采用MOCVD系统使用两步法生长掺Si的InAs0.60P0.40缓冲层，先在温度为450℃时生长一层约为1μm的InAs0.60P0.40，然后升高温度至580℃，在升温过程中缓冲层InAs0.60P0.40退火重结晶，释放由晶格失配所造成的应力，变成下一步生长的界面，在550℃恒温3～5分钟，然后继续生长一层3μm低掺杂n型扩展波长的In0.82Ga0.18As吸收层，再继续生长一层150nm高掺杂n型In0.82Ga0.18As插入层，最后通过生长1μm掺Be的In0.82Al0.18As盖层，形成PNIN探测器结构。
实施例3
一种截止波长为2.6μm的PNIN型InGaAs红外探测器，其结构为：在n型InP衬底上依次生长厚度约为1μm、掺杂浓度为2×1018cm-3的n型InAs0.60P0.40缓冲层，继续生长厚度为3μm、掺杂浓度为8×1016cm-3的n型In0.82Ga0.18As吸收层，再生长厚度为50nm、掺杂浓度为5×1017cm-3的n型In0.82Ga0.18As插入层，最后生长厚度为1μm、掺杂浓度为2×1018cm-3的p型In0.82Al0.18As盖层，形成PNIN探测器结构。
本实施例首先在n型InP衬底上采用MOCVD系统使用两步法生长掺Si的InAs0.60P0.40缓冲层，先在温度为450℃时生长一层约为1μm的InAs0.60P0.40，然后升高温度至580℃，在升温过程中缓冲层InAs0.60P0.40退火重结晶，释放由晶格失配所造成的应力，变成下一步生长的界面，在550℃恒温3～5分钟，然后继续生长一层3μm低掺杂n型扩展波长的In0.82Ga0.18As吸收层，再继续生长一层50nm高掺杂n型In0.82Ga0.18As插入层，最后通过生长1μm掺Be的In0.82Al0.18As盖层，形成PNIN探测器结构。
显然，上述实施例仅仅是为清楚地说明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明创造的保护范围之中。

Claims (4)

1.一种PNIN型InGaAs红外探测器，其特征在于，该探测器是依次包括衬底、缓冲层、扩展波长的InGaAs吸收层、n型插入层和盖层的PNIN型探测器结构；
其中，所述的n型插入层的厚度为50nm～150nm，其组分与所述扩展波长的InGaAs吸收层的组分相同；所述盖层是与扩展波长的InGaAs吸收层晶格匹配的掺Be的p型InAlAs或p型InAsP材料。
2.根据权利要求1所述的PNIN型InGaAs红外探测器，其特征在于，所述衬底为高掺杂的n型InP或n型GaAs单晶衬底。
3.根据权利要求1所述的PNIN型InGaAs红外探测器，其特征在于，所述缓冲层是线性渐变组分的掺Si的InAsP材料或与吸收层晶格匹配的固定组分的掺Si的InAsP材料。
4.根据权利要求1所述的PNIN型InGaAs红外探测器，其特征在于，所述扩展波长的InGaAs吸收层的组分具体为InxGa1-xAs，其中x的范围为0.53<x<1。
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