CN103460379A - 具有支撑性端子垫片的半导体芯片 - Google Patents

具有支撑性端子垫片的半导体芯片 Download PDF

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Publication number
CN103460379A
CN103460379A CN201280014892XA CN201280014892A CN103460379A CN 103460379 A CN103460379 A CN 103460379A CN 201280014892X A CN201280014892X A CN 201280014892XA CN 201280014892 A CN201280014892 A CN 201280014892A CN 103460379 A CN103460379 A CN 103460379A
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CN
China
Prior art keywords
conductor pad
semiconductor chip
conductor
pad
circuit board
Prior art date
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Pending
Application number
CN201280014892XA
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English (en)
Chinese (zh)
Inventor
罗登·R·托帕奇奥
迈克尔·Z·苏
尼尔·麦克莱伦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ATI Technologies ULC
Advanced Micro Devices Inc
Original Assignee
ATI Technologies ULC
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATI Technologies ULC, Advanced Micro Devices Inc filed Critical ATI Technologies ULC
Publication of CN103460379A publication Critical patent/CN103460379A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01223—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
CN201280014892XA 2011-03-25 2012-03-03 具有支撑性端子垫片的半导体芯片 Pending CN103460379A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/072,554 2011-03-25
US13/072,554 US8647974B2 (en) 2011-03-25 2011-03-25 Method of fabricating a semiconductor chip with supportive terminal pad
PCT/US2012/027631 WO2012134710A1 (en) 2011-03-25 2012-03-03 Semiconductor chip with supportive terminal pad

Publications (1)

Publication Number Publication Date
CN103460379A true CN103460379A (zh) 2013-12-18

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280014892XA Pending CN103460379A (zh) 2011-03-25 2012-03-03 具有支撑性端子垫片的半导体芯片

Country Status (7)

Country Link
US (1) US8647974B2 (https=)
EP (1) EP2689455B1 (https=)
JP (1) JP5764256B2 (https=)
KR (1) KR101508669B1 (https=)
CN (1) CN103460379A (https=)
TW (1) TWI517273B (https=)
WO (1) WO2012134710A1 (https=)

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CN106558559A (zh) * 2015-09-25 2017-04-05 台湾积体电路制造股份有限公司 半导体器件及制造方法
CN106952885A (zh) * 2015-12-28 2017-07-14 台湾积体电路制造股份有限公司 封装件
CN108987380A (zh) * 2017-05-31 2018-12-11 台湾积体电路制造股份有限公司 半导体封装件中的导电通孔及其形成方法

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US7749885B2 (en) * 2006-12-15 2010-07-06 Micron Technology, Inc. Semiconductor processing methods, methods of forming contact pads, and methods of forming electrical connections between metal-containing layers
US9978656B2 (en) * 2011-11-22 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming fine-pitch copper bump structures
US9224688B2 (en) 2013-01-04 2015-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Metal routing architecture for integrated circuits
US10242142B2 (en) * 2013-03-14 2019-03-26 Coventor, Inc. Predictive 3-D virtual fabrication system and method
US9818711B2 (en) * 2015-06-30 2017-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Post-passivation interconnect structure and methods thereof
US9793231B2 (en) * 2015-06-30 2017-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Under bump metallurgy (UBM) and methods of forming same
KR102410018B1 (ko) * 2015-09-18 2022-06-16 삼성전자주식회사 반도체 패키지
US9704832B1 (en) * 2016-02-29 2017-07-11 Ixys Corporation Die stack assembly using an edge separation structure for connectivity through a die of the stack
KR102663140B1 (ko) 2016-06-24 2024-05-08 삼성디스플레이 주식회사 디스플레이 장치
MY192389A (en) * 2016-07-01 2022-08-18 Intel Corp Systems, methods, and apparatuses for implementing a pad on solder mask (posm) semiconductor substrate package
DE102017210654B4 (de) * 2017-06-23 2022-06-09 Infineon Technologies Ag Elektronische Vorrichtung, die ein einen Hohlraum umfassendes Umverdrahtungsschicht-Pad umfasst
US10665559B2 (en) * 2018-04-11 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Device, semiconductor package and method of manufacturing semiconductor package
JP2026510132A (ja) 2022-10-31 2026-04-01 キョーセラ・エーブイエックス・コンポーネンツ・コーポレーション 多層コンデンサ

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US7098540B1 (en) * 2003-12-04 2006-08-29 National Semiconductor Corporation Electrical interconnect with minimal parasitic capacitance
CN1941341A (zh) * 2005-09-21 2007-04-04 艾格瑞系统有限公司 用于代替互连层的焊盘下的通路
CN101136383A (zh) * 2006-06-15 2008-03-05 索尼株式会社 电子元件、使用其的半导体器件以及制造电子元件的方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106558559A (zh) * 2015-09-25 2017-04-05 台湾积体电路制造股份有限公司 半导体器件及制造方法
CN106558559B (zh) * 2015-09-25 2019-03-01 台湾积体电路制造股份有限公司 半导体器件及制造方法
CN106952885A (zh) * 2015-12-28 2017-07-14 台湾积体电路制造股份有限公司 封装件
US10165682B2 (en) 2015-12-28 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Opening in the pad for bonding integrated passive device in InFO package
CN106952885B (zh) * 2015-12-28 2019-08-09 台湾积体电路制造股份有限公司 封装件
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CN108987380A (zh) * 2017-05-31 2018-12-11 台湾积体电路制造股份有限公司 半导体封装件中的导电通孔及其形成方法
CN108987380B (zh) * 2017-05-31 2020-06-12 台湾积体电路制造股份有限公司 半导体封装件中的导电通孔及其形成方法

Also Published As

Publication number Publication date
EP2689455B1 (en) 2016-08-31
WO2012134710A1 (en) 2012-10-04
JP2014511039A (ja) 2014-05-01
WO2012134710A8 (en) 2012-12-06
TW201243972A (en) 2012-11-01
KR101508669B1 (ko) 2015-04-07
TWI517273B (zh) 2016-01-11
US20120241985A1 (en) 2012-09-27
EP2689455A1 (en) 2014-01-29
JP5764256B2 (ja) 2015-08-19
KR20140012689A (ko) 2014-02-03
US8647974B2 (en) 2014-02-11

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Application publication date: 20131218