CN103444268A - 静电远程等离子体源 - Google Patents

静电远程等离子体源 Download PDF

Info

Publication number
CN103444268A
CN103444268A CN2012800137906A CN201280013790A CN103444268A CN 103444268 A CN103444268 A CN 103444268A CN 2012800137906 A CN2012800137906 A CN 2012800137906A CN 201280013790 A CN201280013790 A CN 201280013790A CN 103444268 A CN103444268 A CN 103444268A
Authority
CN
China
Prior art keywords
electrode
plasma
chamber
fluid
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012800137906A
Other languages
English (en)
Chinese (zh)
Inventor
D·J·霍夫曼
D·卡特
V·布劳克
K·彼德森
R·戈瑞理
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Energy Industries Inc
Original Assignee
Advanced Energy Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Energy Industries Inc filed Critical Advanced Energy Industries Inc
Priority to CN201710831581.7A priority Critical patent/CN107396526B/zh
Publication of CN103444268A publication Critical patent/CN103444268A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32541Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357Generation remote from the workpiece, e.g. down-stream
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • H01J37/32183Matching circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32568Relative arrangement or disposition of electrodes; moving means
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/02Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/03Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using electrostatic fields
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645Radiofrequency discharges
    • H05H1/466Radiofrequency discharges using capacitive coupling means, e.g. electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/327Arrangements for generating the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
CN2012800137906A 2011-01-25 2012-01-24 静电远程等离子体源 Pending CN103444268A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710831581.7A CN107396526B (zh) 2011-01-25 2012-01-24 静电远程等离子体源

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201161436131P 2011-01-25 2011-01-25
US61/436,131 2011-01-25
US201161554536P 2011-11-02 2011-11-02
US61/554,536 2011-11-02
US13/356,546 2012-01-23
US13/356,546 US8723423B2 (en) 2011-01-25 2012-01-23 Electrostatic remote plasma source
PCT/US2012/022380 WO2012103101A1 (en) 2011-01-25 2012-01-24 Electrostatic remote plasma source

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201710831581.7A Division CN107396526B (zh) 2011-01-25 2012-01-24 静电远程等离子体源

Publications (1)

Publication Number Publication Date
CN103444268A true CN103444268A (zh) 2013-12-11

Family

ID=46543681

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2012800137906A Pending CN103444268A (zh) 2011-01-25 2012-01-24 静电远程等离子体源
CN201710831581.7A Active CN107396526B (zh) 2011-01-25 2012-01-24 静电远程等离子体源

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201710831581.7A Active CN107396526B (zh) 2011-01-25 2012-01-24 静电远程等离子体源

Country Status (7)

Country Link
US (3) US8723423B2 (enExample)
EP (1) EP2668830A4 (enExample)
JP (2) JP5905906B2 (enExample)
KR (1) KR20140005244A (enExample)
CN (2) CN103444268A (enExample)
TW (1) TWI538570B (enExample)
WO (1) WO2012103101A1 (enExample)

Families Citing this family (193)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2648209B1 (en) 2009-02-17 2018-01-03 Solvix GmbH A power supply device for plasma processing
US10707055B2 (en) 2017-11-17 2020-07-07 Advanced Energy Industries, Inc. Spatial and temporal control of ion bias voltage for plasma processing
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9287092B2 (en) * 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US9435029B2 (en) 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US9287086B2 (en) 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8723423B2 (en) 2011-01-25 2014-05-13 Advanced Energy Industries, Inc. Electrostatic remote plasma source
US9220162B2 (en) * 2011-03-09 2015-12-22 Samsung Electronics Co., Ltd. Plasma generating apparatus and plasma generating method
US8884525B2 (en) 2011-03-22 2014-11-11 Advanced Energy Industries, Inc. Remote plasma source generating a disc-shaped plasma
US10225919B2 (en) 2011-06-30 2019-03-05 Aes Global Holdings, Pte. Ltd Projected plasma source
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
KR101909571B1 (ko) 2012-08-28 2018-10-19 어드밴스드 에너지 인더스트리즈 인코포레이티드 넓은 다이내믹 레인지 이온 에너지 바이어스 제어; 고속 이온 에너지 스위칭; 이온 에너지 제어와 펄스동작 바이어스 서플라이; 및 가상 전면 패널
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US9210790B2 (en) * 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8746197B2 (en) * 2012-11-02 2014-06-10 Mcalister Technologies, Llc Fuel injection systems with enhanced corona burst
US9155182B2 (en) 2013-01-11 2015-10-06 Lam Research Corporation Tuning a parameter associated with plasma impedance
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9119283B2 (en) * 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
US9697991B2 (en) 2014-01-10 2017-07-04 Reno Technologies, Inc. RF impedance matching network
US9865432B1 (en) 2014-01-10 2018-01-09 Reno Technologies, Inc. RF impedance matching network
US9496122B1 (en) 2014-01-10 2016-11-15 Reno Technologies, Inc. Electronically variable capacitor and RF matching network incorporating same
US9196459B2 (en) 2014-01-10 2015-11-24 Reno Technologies, Inc. RF impedance matching network
US10455729B2 (en) 2014-01-10 2019-10-22 Reno Technologies, Inc. Enclosure cooling system
US9844127B2 (en) 2014-01-10 2017-12-12 Reno Technologies, Inc. High voltage switching circuit
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US9755641B1 (en) 2014-01-10 2017-09-05 Reno Technologies, Inc. High speed high voltage switching circuit
US10431428B2 (en) 2014-01-10 2019-10-01 Reno Technologies, Inc. System for providing variable capacitance
US9502218B2 (en) 2014-01-31 2016-11-22 Applied Materials, Inc. RPS assisted RF plasma source for semiconductor processing
US9550694B2 (en) 2014-03-31 2017-01-24 Corning Incorporated Methods and apparatus for material processing using plasma thermal source
US9533909B2 (en) 2014-03-31 2017-01-03 Corning Incorporated Methods and apparatus for material processing using atmospheric thermal plasma reactor
US9284210B2 (en) 2014-03-31 2016-03-15 Corning Incorporated Methods and apparatus for material processing using dual source cyclonic plasma reactor
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
KR102247560B1 (ko) 2014-07-14 2021-05-03 삼성전자 주식회사 Rps에서의 플라즈마 생성방법, 및 그 플라즈마 생성방법을 포함한 반도체 소자 제조방법
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US20160200618A1 (en) 2015-01-08 2016-07-14 Corning Incorporated Method and apparatus for adding thermal energy to a glass melt
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9525412B2 (en) 2015-02-18 2016-12-20 Reno Technologies, Inc. Switching circuit
US9306533B1 (en) 2015-02-20 2016-04-05 Reno Technologies, Inc. RF impedance matching network
US11017983B2 (en) 2015-02-18 2021-05-25 Reno Technologies, Inc. RF power amplifier
US10340879B2 (en) 2015-02-18 2019-07-02 Reno Technologies, Inc. Switching circuit
US12119206B2 (en) 2015-02-18 2024-10-15 Asm America, Inc. Switching circuit
US9729122B2 (en) 2015-02-18 2017-08-08 Reno Technologies, Inc. Switching circuit
US10224186B2 (en) 2015-03-13 2019-03-05 Aes Global Holdings, Pte. Ltd Plasma source device and methods
US11342160B2 (en) 2015-06-29 2022-05-24 Reno Technologies, Inc. Filter for impedance matching
US11335540B2 (en) 2015-06-29 2022-05-17 Reno Technologies, Inc. Impedance matching network and method
US11342161B2 (en) 2015-06-29 2022-05-24 Reno Technologies, Inc. Switching circuit with voltage bias
US11150283B2 (en) 2015-06-29 2021-10-19 Reno Technologies, Inc. Amplitude and phase detection circuit
US10692699B2 (en) 2015-06-29 2020-06-23 Reno Technologies, Inc. Impedance matching with restricted capacitor switching
US10984986B2 (en) 2015-06-29 2021-04-20 Reno Technologies, Inc. Impedance matching network and method
US11081316B2 (en) 2015-06-29 2021-08-03 Reno Technologies, Inc. Impedance matching network and method
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
DE102015216976A1 (de) * 2015-09-04 2017-03-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zur Erzeugung eines Plasma-Jets und Verfahren zur Oberflächenbehandlung
US9748076B1 (en) * 2016-04-20 2017-08-29 Advanced Energy Industries, Inc. Apparatus for frequency tuning in a RF generator
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10262836B2 (en) * 2017-04-28 2019-04-16 Seongsik Chang Energy-efficient plasma processes of generating free charges, ozone, and light
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
CN109148250B (zh) * 2017-06-15 2020-07-17 北京北方华创微电子装备有限公司 阻抗匹配装置和阻抗匹配方法
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US12334307B2 (en) 2017-07-10 2025-06-17 Asm Ip Holding B.V. Power control for rf impedance matching network
US10714314B1 (en) 2017-07-10 2020-07-14 Reno Technologies, Inc. Impedance matching network and method
US11393659B2 (en) 2017-07-10 2022-07-19 Reno Technologies, Inc. Impedance matching network and method
US11114280B2 (en) 2017-07-10 2021-09-07 Reno Technologies, Inc. Impedance matching with multi-level power setpoint
US11521833B2 (en) 2017-07-10 2022-12-06 Reno Technologies, Inc. Combined RF generator and RF solid-state matching network
US11289307B2 (en) 2017-07-10 2022-03-29 Reno Technologies, Inc. Impedance matching network and method
US10483090B2 (en) 2017-07-10 2019-11-19 Reno Technologies, Inc. Restricted capacitor switching
US11476091B2 (en) 2017-07-10 2022-10-18 Reno Technologies, Inc. Impedance matching network for diagnosing plasma chamber
US10727029B2 (en) 2017-07-10 2020-07-28 Reno Technologies, Inc Impedance matching using independent capacitance and frequency control
US12272522B2 (en) 2017-07-10 2025-04-08 Asm America, Inc. Resonant filter for solid state RF impedance matching network
US11101110B2 (en) 2017-07-10 2021-08-24 Reno Technologies, Inc. Impedance matching network and method
US11315758B2 (en) 2017-07-10 2022-04-26 Reno Technologies, Inc. Impedance matching using electronically variable capacitance and frequency considerations
US11398370B2 (en) 2017-07-10 2022-07-26 Reno Technologies, Inc. Semiconductor manufacturing using artificial intelligence
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10424487B2 (en) 2017-10-24 2019-09-24 Applied Materials, Inc. Atomic layer etching processes
TWI767088B (zh) 2017-11-17 2022-06-11 新加坡商Aes全球公司 電漿處理系統,用於調變其中的電源的控制方法及相關的電漿處理控制系統
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
PL3711080T3 (pl) 2017-11-17 2023-12-11 Aes Global Holdings, Pte. Ltd. Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
US12288673B2 (en) 2017-11-29 2025-04-29 COMET Technologies USA, Inc. Retuning for impedance matching network control
US11290080B2 (en) 2017-11-29 2022-03-29 COMET Technologies USA, Inc. Retuning for impedance matching network control
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
SG11202005088WA (en) * 2017-12-27 2020-07-29 Mattson Tech Inc Plasma processing apparatus and methods
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US11114287B2 (en) 2018-06-14 2021-09-07 Mks Instruments, Inc. Radical output monitor for a remote plasma source and method of use
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11538662B2 (en) 2019-05-21 2022-12-27 Reno Technologies, Inc. Impedance matching network and method with reduced memory requirements
US10886104B2 (en) * 2019-06-10 2021-01-05 Advanced Energy Industries, Inc. Adaptive plasma ignition
US11527385B2 (en) 2021-04-29 2022-12-13 COMET Technologies USA, Inc. Systems and methods for calibrating capacitors of matching networks
US11114279B2 (en) 2019-06-28 2021-09-07 COMET Technologies USA, Inc. Arc suppression device for plasma processing equipment
US11596309B2 (en) 2019-07-09 2023-03-07 COMET Technologies USA, Inc. Hybrid matching network topology
US11107661B2 (en) 2019-07-09 2021-08-31 COMET Technologies USA, Inc. Hybrid matching network topology
CN114222958B (zh) 2019-07-12 2024-03-19 先进工程解决方案全球控股私人有限公司 具有单个受控开关的偏置电源
CN114144853B (zh) 2019-08-28 2024-12-27 科米特技术美国股份有限公司 高功率低频线圈
US12027351B2 (en) 2020-01-10 2024-07-02 COMET Technologies USA, Inc. Plasma non-uniformity detection
US11887820B2 (en) 2020-01-10 2024-01-30 COMET Technologies USA, Inc. Sector shunts for plasma-based wafer processing systems
US11830708B2 (en) 2020-01-10 2023-11-28 COMET Technologies USA, Inc. Inductive broad-band sensors for electromagnetic waves
US11521832B2 (en) 2020-01-10 2022-12-06 COMET Technologies USA, Inc. Uniformity control for radio frequency plasma processing systems
US11670488B2 (en) 2020-01-10 2023-06-06 COMET Technologies USA, Inc. Fast arc detecting match network
US11961711B2 (en) 2020-01-20 2024-04-16 COMET Technologies USA, Inc. Radio frequency match network and generator
US11605527B2 (en) 2020-01-20 2023-03-14 COMET Technologies USA, Inc. Pulsing control match network
US11688584B2 (en) 2020-04-29 2023-06-27 Advanced Energy Industries, Inc. Programmable ignition profiles for enhanced plasma ignition
TW202143800A (zh) * 2020-05-11 2021-11-16 洪再和 分離式遠端電漿源設備
TW202143799A (zh) * 2020-05-11 2021-11-16 洪再和 具外部電漿源之半導體製程設備及其外部電漿源
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
US11355325B2 (en) 2020-05-28 2022-06-07 Applied Materials, Inc. Methods and systems for monitoring input power for process control in semiconductor process systems
US11373844B2 (en) 2020-09-28 2022-06-28 COMET Technologies USA, Inc. Systems and methods for repetitive tuning of matching networks
US12057296B2 (en) 2021-02-22 2024-08-06 COMET Technologies USA, Inc. Electromagnetic field sensing device
US11923175B2 (en) 2021-07-28 2024-03-05 COMET Technologies USA, Inc. Systems and methods for variable gain tuning of matching networks
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12243717B2 (en) 2022-04-04 2025-03-04 COMET Technologies USA, Inc. Variable reactance device having isolated gate drive power supplies
US11657980B1 (en) 2022-05-09 2023-05-23 COMET Technologies USA, Inc. Dielectric fluid variable capacitor
US12040139B2 (en) 2022-05-09 2024-07-16 COMET Technologies USA, Inc. Variable capacitor with linear impedance and high voltage breakdown
JP2024007905A (ja) * 2022-07-06 2024-01-19 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US12051549B2 (en) 2022-08-02 2024-07-30 COMET Technologies USA, Inc. Coaxial variable capacitor
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
US12132435B2 (en) 2022-10-27 2024-10-29 COMET Technologies USA, Inc. Method for repeatable stepper motor homing

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10320805A1 (de) * 2003-05-08 2004-12-02 Je Plasmaconsult Gmbh Vorrichtung zur Bearbeitung von zylindrischen, zumindest eine elektrisch leitende Ader aufweisenden Substraten
CN2671287Y (zh) * 2003-11-06 2005-01-12 中国科学院物理研究所 一种脉冲高能量密度等离子体的发生装置
CN1671287A (zh) * 2002-05-30 2005-09-21 荷兰应用科学研究组织 抗微生物包膜
CN1736831A (zh) * 2004-02-28 2006-02-22 应用材料有限公司 在电子装置制造设施内传送基片载体的方法和装置
CN101022074A (zh) * 2007-03-14 2007-08-22 万京林 差分馈电介质阻挡放电低温等离子体装置
CN101227790A (zh) * 2008-01-25 2008-07-23 华中科技大学 等离子体喷流装置
US20100101727A1 (en) * 2008-10-27 2010-04-29 Helin Ji Capacitively coupled remote plasma source with large operating pressure range
WO2010138105A1 (en) * 2008-05-30 2010-12-02 Colorado State University Research Foundation Plasma device for wide area surface treatment of tissue

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04193329A (ja) 1990-11-28 1992-07-13 Hitachi Ltd イオン回収装置
JPH06219718A (ja) * 1993-01-25 1994-08-09 Semiconductor Energy Lab Co Ltd プラズマを用いたc60合成方法
US5354413A (en) * 1993-03-18 1994-10-11 Advanced Micro Devices, Inc. Electrode position controller for a semiconductor etching device
US5487785A (en) 1993-03-26 1996-01-30 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5891350A (en) 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
IL118638A (en) 1996-06-12 2002-02-10 Fruchtman Amnon Beam source
JPH10199697A (ja) * 1997-01-10 1998-07-31 Pearl Kogyo Kk 大気圧プラズマによる表面処理装置
US6239553B1 (en) * 1999-04-22 2001-05-29 Applied Materials, Inc. RF plasma source for material processing
JP3401596B2 (ja) * 1999-09-22 2003-04-28 独立行政法人産業技術総合研究所 布帛の片面改質方法及び片面が改質された布帛
US6291938B1 (en) 1999-12-31 2001-09-18 Litmas, Inc. Methods and apparatus for igniting and sustaining inductively coupled plasma
US6156667A (en) 1999-12-31 2000-12-05 Litmas, Inc. Methods and apparatus for plasma processing
US6326584B1 (en) 1999-12-31 2001-12-04 Litmas, Inc. Methods and apparatus for RF power delivery
US6392210B1 (en) 1999-12-31 2002-05-21 Russell F. Jewett Methods and apparatus for RF power process operations with automatic input power control
JP4384645B2 (ja) 2001-01-11 2009-12-16 株式会社日立国際電気 処理管
JP2003049272A (ja) 2001-08-07 2003-02-21 Konica Corp 大気圧プラズマ処理装置、大気圧プラズマ処理方法及び大気圧プラズマ処理装置用の電極システム
WO2003071839A1 (en) 2002-02-20 2003-08-28 Matsushita Electric Works, Ltd. Plasma processing device and plasma processing method
US6707051B2 (en) 2002-07-10 2004-03-16 Wintek Corporation RF loaded line type capacitive plasma source for broad range of operating gas pressure
US7504006B2 (en) 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
KR100486724B1 (ko) * 2002-10-15 2005-05-03 삼성전자주식회사 사행 코일 안테나를 구비한 유도결합 플라즈마 발생장치
US6802366B1 (en) 2002-10-31 2004-10-12 Advanced Energy Industries, Inc. Swage method for cooling pipes
JP2004207145A (ja) 2002-12-26 2004-07-22 Sekisui Chem Co Ltd 放電プラズマ処理装置
US6822396B2 (en) 2003-01-31 2004-11-23 Advanced Energy Industries, Inc. Transformer ignition circuit for a transformer coupled plasma source
US6724148B1 (en) * 2003-01-31 2004-04-20 Advanced Energy Industries, Inc. Mechanism for minimizing ion bombardment energy in a plasma chamber
US6927358B2 (en) 2003-01-31 2005-08-09 Advanced Energy Industries, Inc. Vacuum seal protection in a dielectric break
US7468494B2 (en) 2003-01-31 2008-12-23 Advanced Energy Industries Reaction enhancing gas feed for injecting gas into a plasma chamber
US6819096B2 (en) 2003-01-31 2004-11-16 Advanced Energy Industries, Inc. Power measurement mechanism for a transformer coupled plasma source
JP2005322416A (ja) * 2003-05-01 2005-11-17 Gunma Univ 大気圧低温プラズマ装置と表面処理方法
US7164095B2 (en) * 2004-07-07 2007-01-16 Noritsu Koki Co., Ltd. Microwave plasma nozzle with enhanced plume stability and heating efficiency
US20060130971A1 (en) * 2004-12-21 2006-06-22 Applied Materials, Inc. Apparatus for generating plasma by RF power
US7922979B2 (en) * 2005-03-28 2011-04-12 Mitsubishi Denki Kabushiki Kaisha Silent discharge plasma apparatus
EP2479856B1 (en) * 2005-03-28 2016-09-14 Mitsubishi Denki Kabushiki Kaisha Silent discharge plasma apparatus
US8187416B2 (en) * 2005-05-20 2012-05-29 Applied Materials, Inc. Interior antenna for substrate processing chamber
JP4930913B2 (ja) * 2005-09-12 2012-05-16 東レバッテリーセパレータフィルム合同会社 多孔性素材のプラズマ処理方法及び処理装置
JP4489680B2 (ja) * 2005-10-03 2010-06-23 株式会社アドテック プラズマ テクノロジー マイクロ波プラズマ発生方法および装置
CN100482031C (zh) * 2006-03-14 2009-04-22 中国科学院物理研究所 一种大气压介质阻挡辉光放电等离子体发生方法及装置
JP4109301B2 (ja) * 2006-08-08 2008-07-02 株式会社アドテック プラズマ テクノロジー マイクロ波プラズマトーチ
US8314560B2 (en) * 2006-11-28 2012-11-20 Samco Inc. Plasma processing apparatus
TW200845197A (en) * 2007-03-28 2008-11-16 Matsushita Electric Industrial Co Ltd Plasma etching apparatus
US7453191B1 (en) * 2007-07-06 2008-11-18 Uion Co., Ltd. Induction concentration remote atmospheric pressure plasma generating apparatus
CN105206496B (zh) 2008-08-04 2019-07-05 北美Agc平板玻璃公司 等离子体源和用等离子体增强的化学气相沉积来沉积薄膜涂层的方法
JP2010103455A (ja) * 2008-09-26 2010-05-06 Mitsubishi Electric Corp プラズマ処理装置
CN101720163B (zh) * 2008-10-10 2012-12-19 河南理工大学 大气压下介质阻挡类辉光放电反应器
US8222822B2 (en) * 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
WO2011062940A2 (en) * 2009-11-17 2011-05-26 Applied Materials, Inc. Large area plasma processing chamber with at-electrode rf matching
JP5554099B2 (ja) * 2010-03-18 2014-07-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2013522477A (ja) 2010-03-22 2013-06-13 アプライド マテリアルズ インコーポレイテッド 遠隔プラズマ源を用いた誘電体堆積
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US8723423B2 (en) * 2011-01-25 2014-05-13 Advanced Energy Industries, Inc. Electrostatic remote plasma source
CN103237404A (zh) * 2013-05-14 2013-08-07 哈尔滨工业大学 同轴放电模式的大气等离子体发生装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1671287A (zh) * 2002-05-30 2005-09-21 荷兰应用科学研究组织 抗微生物包膜
DE10320805A1 (de) * 2003-05-08 2004-12-02 Je Plasmaconsult Gmbh Vorrichtung zur Bearbeitung von zylindrischen, zumindest eine elektrisch leitende Ader aufweisenden Substraten
CN2671287Y (zh) * 2003-11-06 2005-01-12 中国科学院物理研究所 一种脉冲高能量密度等离子体的发生装置
CN1736831A (zh) * 2004-02-28 2006-02-22 应用材料有限公司 在电子装置制造设施内传送基片载体的方法和装置
CN101022074A (zh) * 2007-03-14 2007-08-22 万京林 差分馈电介质阻挡放电低温等离子体装置
CN101227790A (zh) * 2008-01-25 2008-07-23 华中科技大学 等离子体喷流装置
WO2010138105A1 (en) * 2008-05-30 2010-12-02 Colorado State University Research Foundation Plasma device for wide area surface treatment of tissue
US20100101727A1 (en) * 2008-10-27 2010-04-29 Helin Ji Capacitively coupled remote plasma source with large operating pressure range

Also Published As

Publication number Publication date
KR20140005244A (ko) 2014-01-14
JP2016149365A (ja) 2016-08-18
US20140210345A1 (en) 2014-07-31
TW201234936A (en) 2012-08-16
JP5905906B2 (ja) 2016-04-20
CN107396526A (zh) 2017-11-24
TWI538570B (zh) 2016-06-11
US20120187844A1 (en) 2012-07-26
EP2668830A1 (en) 2013-12-04
WO2012103101A1 (en) 2012-08-02
US9142388B2 (en) 2015-09-22
US8723423B2 (en) 2014-05-13
US9524854B2 (en) 2016-12-20
JP2014511543A (ja) 2014-05-15
EP2668830A4 (en) 2015-08-19
US20150279631A1 (en) 2015-10-01
CN107396526B (zh) 2021-08-31

Similar Documents

Publication Publication Date Title
CN107396526B (zh) 静电远程等离子体源
US7846293B2 (en) Plasma processing apparatus and method
US6872281B1 (en) Chamber configuration for confining a plasma
CN1227710C (zh) 用于产生均匀加工速率的方法和装置
JP2022173278A (ja) 自己共振装置を備えたプラズマ点火装置および方法
TWI408744B (zh) Plasma processing device and plasma processing method
EP1840937A1 (en) Plasma processing apparatus and plasma processing method
CN1833296A (zh) 用于产生均匀处理速率的天线
WO2003012821A2 (en) Method and apparatus for producing uniform process rates
JP7366188B2 (ja) 電源システム
WO2007117122A1 (en) Compound plasma source and method for dissociating gases using the same
JP4527432B2 (ja) プラズマ処理方法及びプラズマ処理装置
CN101366101B (zh) 用于引燃低压等离子体的方法和装置
JP5174848B2 (ja) プラズマ処理方法及びプラズマ処理装置
KR101063740B1 (ko) 절연플레이트를 포함하고 유도결합 플라즈마를 이용하는 대면적 엘씨디 제조장치
KR20050013804A (ko) 유도결합플라즈마를 이용하는 대면적 엘씨디기판제조장치의 절연플레이트

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20131211

RJ01 Rejection of invention patent application after publication