CN103443943B - 包括密封的led封装 - Google Patents

包括密封的led封装 Download PDF

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Publication number
CN103443943B
CN103443943B CN201180065259.9A CN201180065259A CN103443943B CN 103443943 B CN103443943 B CN 103443943B CN 201180065259 A CN201180065259 A CN 201180065259A CN 103443943 B CN103443943 B CN 103443943B
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CN
China
Prior art keywords
light emitting
film
reflective
emitting element
light
Prior art date
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Active
Application number
CN201180065259.9A
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English (en)
Chinese (zh)
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CN103443943A (zh
Inventor
S.J.A.比尔休曾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
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Filing date
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Publication of CN103443943A publication Critical patent/CN103443943A/zh
Application granted granted Critical
Publication of CN103443943B publication Critical patent/CN103443943B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means

Landscapes

  • Led Device Packages (AREA)
CN201180065259.9A 2011-01-17 2011-12-29 包括密封的led封装 Active CN103443943B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201161433306P 2011-01-17 2011-01-17
US61/433,306 2011-01-17
US61/433306 2011-01-17
PCT/IB2011/056005 WO2012101488A1 (en) 2011-01-17 2011-12-29 Led package comprising encapsulation

Publications (2)

Publication Number Publication Date
CN103443943A CN103443943A (zh) 2013-12-11
CN103443943B true CN103443943B (zh) 2017-07-21

Family

ID=45560941

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180065259.9A Active CN103443943B (zh) 2011-01-17 2011-12-29 包括密封的led封装

Country Status (7)

Country Link
US (1) US8907364B2 (enExample)
EP (1) EP2666193B1 (enExample)
JP (1) JP5932835B2 (enExample)
KR (1) KR101897308B1 (enExample)
CN (1) CN103443943B (enExample)
TW (1) TWI606615B (enExample)
WO (1) WO2012101488A1 (enExample)

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WO2013118076A1 (en) * 2012-02-10 2013-08-15 Koninklijke Philips N.V. Low cost encapsulated light-emitting device
US9484504B2 (en) * 2013-05-14 2016-11-01 Apple Inc. Micro LED with wavelength conversion layer
KR102185099B1 (ko) * 2013-05-20 2020-12-02 루미리즈 홀딩 비.브이. 돔을 가진 칩 규모 발광 디바이스 패키지
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
TWD167284S (zh) * 2014-01-14 2015-04-21 隆達電子股份有限公司 導線架料帶之部分
USD780704S1 (en) * 2014-08-27 2017-03-07 Mitsubishi Electric Corporation Light source module
USD768584S1 (en) * 2014-11-13 2016-10-11 Mitsubishi Electric Corporation Light source module
CN105047793B (zh) * 2015-08-20 2018-07-06 厦门市三安光电科技有限公司 发光二极管封装结构的制作方法
DE102016112293A1 (de) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement
CN107845717A (zh) * 2016-09-21 2018-03-27 深圳市兆驰节能照明股份有限公司 Csp光源及其制造方法和制造模具
TWI635470B (zh) * 2017-07-04 2018-09-11 PlayNitride Inc. 發光模組及顯示裝置
DE102018112332A1 (de) * 2018-05-23 2019-11-28 Osram Opto Semiconductors Gmbh Bauteil und verfahren zur herstellung eines bauteils
KR102739657B1 (ko) * 2019-05-23 2024-12-09 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자패키지 및 광원장치
JP7244771B2 (ja) * 2020-04-02 2023-03-23 日亜化学工業株式会社 面状光源の製造方法
JP2023179115A (ja) * 2022-06-07 2023-12-19 株式会社ジャパンディスプレイ 表示装置
CN115084108A (zh) * 2022-07-04 2022-09-20 纳欣科技有限公司 发光模组及其制作方法、以及显示面板和电子设备
CN115528161A (zh) * 2022-10-26 2022-12-27 上海天马微电子有限公司 显示面板的制作方法、显示面板及显示装置

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JP2009239022A (ja) * 2008-03-27 2009-10-15 Lintec Corp 発光モジュール製造用シート、発光モジュール用シート、その製造方法及び発光モジュール
US20100059782A1 (en) * 2008-09-09 2010-03-11 Nichia Corporation Optical-semiconductor device and method for manufactruing the same
US20100323465A1 (en) * 2003-09-18 2010-12-23 Cree, Inc. Molded chip fabrication method and apparatus

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JP3844196B2 (ja) 2001-06-12 2006-11-08 シチズン電子株式会社 発光ダイオードの製造方法
JP4048783B2 (ja) * 2002-01-18 2008-02-20 ソニー株式会社 電子装置の製造方法
JP3962282B2 (ja) * 2002-05-23 2007-08-22 松下電器産業株式会社 半導体装置の製造方法
TW563263B (en) * 2002-09-27 2003-11-21 United Epitaxy Co Ltd Surface mounting method for high power light emitting diode
JP2005079329A (ja) 2003-08-29 2005-03-24 Stanley Electric Co Ltd 表面実装型発光ダイオード
JP2006346961A (ja) * 2005-06-15 2006-12-28 Matsushita Electric Ind Co Ltd 樹脂膜の形成方法及び光半導体装置の製造方法
KR20080083830A (ko) * 2007-03-13 2008-09-19 삼성전기주식회사 Ｌｅｄ 패키지 및 그 제조방법
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KR101025980B1 (ko) * 2008-11-28 2011-03-30 삼성엘이디 주식회사 질화물계 반도체 발광소자의 제조방법
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Patent Citations (3)

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US20100323465A1 (en) * 2003-09-18 2010-12-23 Cree, Inc. Molded chip fabrication method and apparatus
JP2009239022A (ja) * 2008-03-27 2009-10-15 Lintec Corp 発光モジュール製造用シート、発光モジュール用シート、その製造方法及び発光モジュール
US20100059782A1 (en) * 2008-09-09 2010-03-11 Nichia Corporation Optical-semiconductor device and method for manufactruing the same

Also Published As

Publication number Publication date
EP2666193A1 (en) 2013-11-27
JP2014503122A (ja) 2014-02-06
US20130285082A1 (en) 2013-10-31
TW201238092A (en) 2012-09-16
TWI606615B (zh) 2017-11-21
EP2666193B1 (en) 2020-07-29
KR101897308B1 (ko) 2018-09-10
CN103443943A (zh) 2013-12-11
JP5932835B2 (ja) 2016-06-08
WO2012101488A9 (en) 2013-09-06
US8907364B2 (en) 2014-12-09
KR20140004726A (ko) 2014-01-13
WO2012101488A1 (en) 2012-08-02

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Address after: Eindhoven, Netherlands

Patentee after: KONINKLIJKE PHILIPS N.V.

Address before: Eindhoven, Netherlands

Patentee before: KONINKLIJKE PHILIPS ELECTRONICS N.V.

CP01 Change in the name or title of a patent holder
TR01 Transfer of patent right

Effective date of registration: 20200727

Address after: Holland Schiphol

Patentee after: KONINKLIJKE PHILIPS NV

Address before: Eindhoven, Netherlands

Patentee before: KONINKLIJKE PHILIPS N.V.

TR01 Transfer of patent right