KR101897308B1 - 발광 디바이스를 제조하기 위한 방법 및 그것을 포함하는 구조체 - Google Patents

발광 디바이스를 제조하기 위한 방법 및 그것을 포함하는 구조체 Download PDF

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KR101897308B1
KR101897308B1 KR1020137021666A KR20137021666A KR101897308B1 KR 101897308 B1 KR101897308 B1 KR 101897308B1 KR 1020137021666 A KR1020137021666 A KR 1020137021666A KR 20137021666 A KR20137021666 A KR 20137021666A KR 101897308 B1 KR101897308 B1 KR 101897308B1
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light emitting
film
reflective
emitting elements
reflective structures
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KR20140004726A (ko
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서지 조엘 아르만드 비에르후이젠
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루미리즈 홀딩 비.브이.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means

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  • Led Device Packages (AREA)
KR1020137021666A 2011-01-17 2011-12-29 발광 디바이스를 제조하기 위한 방법 및 그것을 포함하는 구조체 Active KR101897308B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161433306P 2011-01-17 2011-01-17
US61/433,306 2011-01-17
PCT/IB2011/056005 WO2012101488A1 (en) 2011-01-17 2011-12-29 Led package comprising encapsulation

Publications (2)

Publication Number Publication Date
KR20140004726A KR20140004726A (ko) 2014-01-13
KR101897308B1 true KR101897308B1 (ko) 2018-09-10

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Country Status (7)

Country Link
US (1) US8907364B2 (enExample)
EP (1) EP2666193B1 (enExample)
JP (1) JP5932835B2 (enExample)
KR (1) KR101897308B1 (enExample)
CN (1) CN103443943B (enExample)
TW (1) TWI606615B (enExample)
WO (1) WO2012101488A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013118076A1 (en) * 2012-02-10 2013-08-15 Koninklijke Philips N.V. Low cost encapsulated light-emitting device
US9484504B2 (en) * 2013-05-14 2016-11-01 Apple Inc. Micro LED with wavelength conversion layer
KR102185099B1 (ko) * 2013-05-20 2020-12-02 루미리즈 홀딩 비.브이. 돔을 가진 칩 규모 발광 디바이스 패키지
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
TWD167284S (zh) * 2014-01-14 2015-04-21 隆達電子股份有限公司 導線架料帶之部分
USD780704S1 (en) * 2014-08-27 2017-03-07 Mitsubishi Electric Corporation Light source module
USD768584S1 (en) * 2014-11-13 2016-10-11 Mitsubishi Electric Corporation Light source module
CN105047793B (zh) * 2015-08-20 2018-07-06 厦门市三安光电科技有限公司 发光二极管封装结构的制作方法
DE102016112293A1 (de) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement
CN107845717A (zh) * 2016-09-21 2018-03-27 深圳市兆驰节能照明股份有限公司 Csp光源及其制造方法和制造模具
TWI635470B (zh) * 2017-07-04 2018-09-11 PlayNitride Inc. 發光模組及顯示裝置
DE102018112332A1 (de) * 2018-05-23 2019-11-28 Osram Opto Semiconductors Gmbh Bauteil und verfahren zur herstellung eines bauteils
KR102739657B1 (ko) * 2019-05-23 2024-12-09 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자패키지 및 광원장치
JP7244771B2 (ja) * 2020-04-02 2023-03-23 日亜化学工業株式会社 面状光源の製造方法
JP2023179115A (ja) * 2022-06-07 2023-12-19 株式会社ジャパンディスプレイ 表示装置
CN115084108A (zh) * 2022-07-04 2022-09-20 纳欣科技有限公司 发光模组及其制作方法、以及显示面板和电子设备
CN115528161A (zh) * 2022-10-26 2022-12-27 上海天马微电子有限公司 显示面板的制作方法、显示面板及显示装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010239105A (ja) * 2008-09-09 2010-10-21 Nichia Corp 光半導体装置及びその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3844196B2 (ja) 2001-06-12 2006-11-08 シチズン電子株式会社 発光ダイオードの製造方法
JP4048783B2 (ja) * 2002-01-18 2008-02-20 ソニー株式会社 電子装置の製造方法
JP3962282B2 (ja) * 2002-05-23 2007-08-22 松下電器産業株式会社 半導体装置の製造方法
TW563263B (en) * 2002-09-27 2003-11-21 United Epitaxy Co Ltd Surface mounting method for high power light emitting diode
JP2005079329A (ja) 2003-08-29 2005-03-24 Stanley Electric Co Ltd 表面実装型発光ダイオード
US7915085B2 (en) * 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP2006346961A (ja) * 2005-06-15 2006-12-28 Matsushita Electric Ind Co Ltd 樹脂膜の形成方法及び光半導体装置の製造方法
KR20080083830A (ko) * 2007-03-13 2008-09-19 삼성전기주식회사 Ｌｅｄ 패키지 및 그 제조방법
JP2009117536A (ja) * 2007-11-05 2009-05-28 Towa Corp 樹脂封止発光体及びその製造方法
JP5324114B2 (ja) * 2008-03-27 2013-10-23 リンテック株式会社 発光モジュール用シートの製造方法、発光モジュール用シート
TWI420695B (zh) * 2008-10-21 2013-12-21 榮創能源科技股份有限公司 化合物半導體元件之封裝模組結構及其製造方法
KR101025980B1 (ko) * 2008-11-28 2011-03-30 삼성엘이디 주식회사 질화물계 반도체 발광소자의 제조방법
DE112011100376B4 (de) * 2010-01-29 2024-06-27 Citizen Electronics Co., Ltd. Verfahren zur herstellung einer licht aussendenden vorrichtung
DE202010008705U1 (de) 2010-10-04 2010-12-30 Harvatek Corp. Arrayartiges Multi-Chip-Gehäuse für LEDs

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010239105A (ja) * 2008-09-09 2010-10-21 Nichia Corp 光半導体装置及びその製造方法

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Publication number Publication date
EP2666193A1 (en) 2013-11-27
JP2014503122A (ja) 2014-02-06
US20130285082A1 (en) 2013-10-31
TW201238092A (en) 2012-09-16
TWI606615B (zh) 2017-11-21
EP2666193B1 (en) 2020-07-29
CN103443943B (zh) 2017-07-21
CN103443943A (zh) 2013-12-11
JP5932835B2 (ja) 2016-06-08
WO2012101488A9 (en) 2013-09-06
US8907364B2 (en) 2014-12-09
KR20140004726A (ko) 2014-01-13
WO2012101488A1 (en) 2012-08-02

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