CN103439839B - 一种形成膜层的方法和基板 - Google Patents

一种形成膜层的方法和基板 Download PDF

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Publication number
CN103439839B
CN103439839B CN201310339744.1A CN201310339744A CN103439839B CN 103439839 B CN103439839 B CN 103439839B CN 201310339744 A CN201310339744 A CN 201310339744A CN 103439839 B CN103439839 B CN 103439839B
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tunic
rete
formation
film
forming
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CN103439839A (zh
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唐华
赵冉
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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Priority to CN201310339744.1A priority Critical patent/CN103439839B/zh
Publication of CN103439839A publication Critical patent/CN103439839A/zh
Priority to US14/363,784 priority patent/US9546421B2/en
Priority to PCT/CN2013/089486 priority patent/WO2015018160A1/zh
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Abstract

本发明提供一种形成膜层的方法和基板，属于膜层制备技术领域，其可解决现有的形成膜层方法易出现膜层不良的问题。本发明的形成膜层的方法包括在基板上形成第一层膜；对所述第一层膜进行第一次清洗；在所述第一层膜上形成第二层膜，所述第二层膜的材料与第一层膜的材料相同；对所述第二层膜进行第二次清洗。本发明的基板包括由上述形成膜层的方法制得的膜层。本发明可用于提升膜层品质。

Description

一种形成膜层的方法和基板
技术领域
本发明属于膜层制备技术领域，具体涉及一种形成膜层的方法和包括由所述形成膜层的方法制得的膜层的基板。
背景技术
氧化铟锡膜（ITO膜）具有优良的导电性和可见光透过率，是一种重要的透明导电膜，在光电器件中得到了广泛应用，目前一般是采用磁控溅射技术来制备ITO膜。磁控溅射技术中，真空条件下实现等离子放电，利用电磁场控制带电粒子的运动，轰击靶材，靶材原子被撞飞，并附着在基板上，从而在基板上形成所需要的薄膜。
目前，TN(TwistNematic，扭曲向列)型液晶显示装置的彩膜基板上需要形成ITO膜作为公共电极，而通过磁控溅射技术制备的ITO膜存在着一些膜面不良和缺陷，例如，ITO膜易出现膜面小孔（pinhole），膜面小孔的产生过程如图1、图2所示，在镀膜时，若彩膜基板1上有异物21（例如灰尘、颗粒异物等），镀膜后膜面就会形成一个凸起，在后续的清洗工序中，凸起被清洗掉落，那么ITO膜2就会产生一个膜面小孔22，膜面小孔22在成盒后会显示为一个异常点，影响液晶显示装置的良率，因此显然需要避免形成膜面小孔22。现有的一种减少膜面小孔22产生的方法是在镀膜前设置前清洗工序，且镀膜前各设备密封并定期清洁，但显然这种方法仅使得镀膜前基板的异物减少，很难完全消除异物。另外，液晶显示装置中，公共电极需要加电压以实现对像素单元的明暗控制，为了保证其能承受所需的电压，因此对ITO膜的厚度有一定的要求，目前TN型液晶显示装置彩膜基板的ITO膜厚通常为150nm，在制作膜厚为150nm的ITO膜2时，镀膜设备功率相应的为14.6kw（对应单件产品生产时间为35秒），而生产实际中，当镀膜功率高于8～9kw时，靶材表面和彩膜基板ITO膜2形成小瘤（结节）的可能性急剧增加，ITO膜2的小瘤也会形成膜面小孔；同时靶材表面的小瘤易产生尖端放电，并影响镀膜品质，使得由其镀膜形成的ITO膜2膜面突起（不能清洗掉的突起部分，在修补工艺需要将其打磨），面电阻和透过率数值超标，也因为这些影响需要定期对靶材表面的小瘤进行打磨、清洁，需要停线处理，显然会导致设备维护时间大量增加，稼动率降低（稼动率是指设备在所能提供的时间内为了创造价值而占用的时间所占的比重）。
利用其他工艺方法，如蒸镀工艺、溅射工艺、化学气相沉积工艺、喷涂工艺等，形成膜层时，也会出现由于异物导致的膜面不良，影响后续产品的性能。
发明内容
本发明所要解决的技术问题包括，针对现有的形成膜层的方法易出现膜层不良的问题，提供一种减少膜层不良、提升膜层品质的形成膜层的方法。
解决本发明技术问题所采用的技术方案是一种形成膜层的方法，包括：
在基板上形成第一层膜；
对所述第一层膜进行第一次清洗；
在所述第一层膜上形成第二层膜，所述第二层膜的材料与第一层膜的材料相同；
对所述第二层膜进行第二次清洗。
优选的是，形成第一层膜的厚度与形成第二层膜的厚度的比值范围为0.5至2。
进一步优选的是，形成第一层膜的厚度与形成第二层膜的厚度相同。
优选的是，所述形成第一层膜采用蒸镀工艺、溅射工艺、化学气相沉积工艺、喷涂中的一种；
和/或
形成第二层膜采用蒸镀工艺、溅射工艺、化学气相沉积工艺、喷涂中的一种。
进一步优选的是，采用溅射工艺形成第一层膜和形成第二层膜控制设备功率，使溅射形成的第一层膜和第二层膜的小瘤的尺寸小于50微米。
优选的是，所述第一次清洗和所述第二次清洗包括纯水冲洗和气体冲洗，用于除去第一层膜和第二层膜上的异物和小瘤。
优选的是，所述第一层膜的材料和所述第二层膜的材料为金属或金属氧化物。
进一步优选的是，所述第一层膜的材料和所述第二层膜的材料为氧化铟锡。
本发明的形成膜层工艺分为两次进行，并对每次形成的膜进行清洗，因此尽管两次形成的膜都有可能会产生膜面不良，但是同一个位置两次形成的膜均产生膜面不良的概率极低，即两次形成的膜的膜层互相补偿由单次形成的膜所产生的膜面不良，避免了膜面不良对整体膜层的影响，减少了因膜面不良问题导致的后续产品不良。
本发明所要解决的技术问题还包括，针对现有的形成膜层方法易出现膜层不良，导致基板品质不良的问题，提供一种品质良好的基板。
解决本发明技术问题所采用的技术方案是一种基板，包括：由上述的形成膜层的方法制得的膜层。
优选的是，所述基板为彩膜基板，所述膜层作为公共电极。
进一步优选的是，所述膜层的厚度在135nm到150nm之间。
本发明的基板的形成膜层工艺分两次进行，并在每次形成膜后进行清洗，因此尽管两次形成的膜都有可能会产生膜面不良，但是同一个位置两次形成的膜均产生膜面不良的概率极低，即两次形成的膜的膜层互相补偿由单次形成的膜所产生的膜面不良，避免了膜面不良对整体膜层的影响，减少了因膜面不良问题导致的面板成像不良。
附图说明
图1为现有的彩膜基板镀膜后膜层有异物的结构示意图；
图2为现有的彩膜基板产生膜面小孔后的结构示意图；
图3为本发明的实施例1的形成膜层的方法形成第一层膜后的结构示意图；
图4为本发明的实施例1的形成膜层的方法在对第一层膜进行第一次清洗后的结构示意图；
图5为本发明的实施例1的形成膜层的方法形成第二层膜后的结构示意图；
图6为本发明的实施例1的形成膜层的方法在对第二层膜进行第二次清洗后的结构示意图；
图7为本发明的实施例1的形成膜层的方法的流程图；
其中附图标记为：1、彩膜基板；2、氧化铟锡膜（ITO膜）；21、异物；22、膜面小孔；201、第一层膜；202、第二层膜。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例1：
本实施例提供一种形成膜层的方法，如图3至图7所示，包括：
S101、如图3所示，在基板上形成第一层膜201；第一层膜201上可能存在着异物21，异物21可以为灰尘、颗粒物等，在后续过程中会形成膜面不良，如膜面小孔22。
优选的是，所述形成第一层膜201采用蒸镀工艺、溅射工艺、化学气相沉积工艺、喷涂中的一种。
需要说明的是，形成膜层的方式有很多种，例如蒸镀工艺、溅射工艺、化学气相沉积工艺、喷涂等；这些工艺中形成的膜层也都能产生膜面不良，故均适用本发明的方法。本实施例优选的采用溅射工艺形成第一层膜201，这是因为通过溅射工艺形成的膜的密度高、针孔少、膜层纯度高，并且膜层厚度的可控性和重复性好。
另外溅射工艺通常分为直流溅射工艺和射频溅射工艺两种，本实施例优选的采用直流溅射，这是因为射频溅射工艺对设备要求严格，成本较高。
优选的是，所述形成第一层膜201的条件包括：
工作真空度在0.1到1Pa之间；
工作温度为110℃到150℃之间；
工作气体为氩氧混合气，其中氧气体积百分比占1%到3%。
可以理解的是，基板在形成膜时需要满足一定的条件。
需要进一步说明的是，工作温度优选的控制在120℃。具体的是通过电热丝（电热丝温度因位置不同在150℃到400℃之间）传递热量，同时在溅射镀膜设备的腔体内遍布冷却水管来稳定温度（优选冷却水管进口温度为32℃，出口温度35℃）。一般有高温镀膜（230℃）和低温镀膜（120℃）两种方式，本实施例优选的为低温镀膜（120℃）方式，这是因为低温成膜稼动率高。显然，低温镀膜无需采用专有高温加热腔室进行加热，且温度变化范围较小，稼动率高。
优选的是，所述第一层膜201的材料为金属或金属氧化物。
也就是说，通过溅射工艺制作各种膜层（膜层材料为金属或金属氧化物）都会产生膜面小孔22和小瘤等膜面不良，并影响膜层品质，因此均可采用本实施例提供的形成膜层的方法来提升膜层品质。
进一步优选的是，所述第一层膜201的材料为氧化铟锡。
需要说明的是，之所以第一层膜201优选的为氧化铟锡膜，是因为在彩膜基板1上的ITO膜2的膜层制备工艺中，膜面小孔22和小瘤等膜面不良对彩膜基板1的良率影响较大，因此本实施例以彩膜基板上的ITO膜2为例进行举例说明。
优选的是，形成第一层膜201的厚度与形成第二层膜202的厚度的比值范围为0.5至2。
具体的，所述第一层膜201的厚度在50nm到100nm之间。
之所以本实施例中第一层膜201的厚度优选的在50nm到100nm之间，是因为对于彩膜基板1而言，其膜层制备工艺的目的是为了形成公共电极，并对应阵列基板的电压开关，实现像素单元的明暗控制，因此彩膜基板1膜层的厚度有一定的要求，目前TN型液晶显示装置彩膜基板1的ITO膜2厚通常为150nm，本实施例提供的形成膜层的方法包括两次成膜，两次成膜后形成的膜层厚度在150nm即可，优选的第一层膜201的厚度在50nm到100nm之间，可以保证第一层膜201和第二层膜202的厚度均不会太薄或太厚，保证膜层品质。不难理解的是，具体第一层膜201和第二层膜202的厚度都可以根据不同的需要具体设计，本发明不做具体限定。
进一步优选的是，采用溅射工艺形成第一层膜201时控制设备功率，使溅射形成的第一层膜201的小瘤的尺寸小于50微米。
具体的说，所述形成第一层膜201时设备的功率优选的控制在6.8kW到7.8kW之间。
之所以将形成第一层膜201时设备的功率控制在6.8kW到7.8kW这个范围内，是因为在形成膜时，靶材表面和ITO膜2的小瘤急剧增长的功率分界值为8kW到9kW，也就是说，在形成膜时，设备功率大于8kW的情况下，在靶材表面和ITO膜2上会产生更多的小瘤，因此本实施例中形成第一层膜201时设备的功率在6.8kW到7.8kW之间，使得靶材表面和ITO膜2均不容易产生小瘤，降低了因ITO膜2上小瘤形成膜面小孔22的概率，同时因为靶材表面小瘤数量少，不容易因靶材表面的小瘤而产生尖端放电，所以靶材不需要经常打磨，减少了清洁维护的次数和时间，提高了生产效率。同时，在用小瘤数量少的靶材溅射成膜时形成的ITO膜2不易出现膜面凸起（膜面不平整，且无法清洗掉落，超出一定高度，需要在后续修补工艺打磨）。
也就是说，将设备功率控制在6.8kW到7.8kW范围内，不仅减少了对靶材的清洁维护次数和时间，还保证了用该靶材溅射成膜形成的膜层品质良好，并提高了整条生产线的稼动率。
可以理解的是，设备的具体功率可以根据设备的不同而具体设计，事实上，只要是使溅射形成的第一层膜201的小瘤的尺寸小于50微米即可。
S102、进行第一次清洗；
优选的是，所述第一次清洗包括纯水冲洗和气体冲洗，用于除去第一层膜201上的异物21和小瘤。
具体的，所述第一次清洗包括：
纯水冲洗同时配合毛刷转运清洁，流速在145L/min到150L/min之间，优选的为150L/min；
纯水和干净空气冲洗，二流体（纯水和干净空气）流速在55L/min到60L/min之间，优选的为60L/min；
纯水润洗，流速在135L/min到140L/min之间，优选的为138L/min；
空气刀吹干，流速在3300L/min到3500L/min之间，优选的为3400L/min。
如图4所示，在经过第一次清洗过后，图3中所示第一层膜201上的异物21被洗掉，形成了膜面小孔22。当然，图中仅画出1个异物21，形成1个膜面小孔22，实际上异物和膜面小孔的数量可以为多个，除了异物21会形成膜面小孔22之外，在形成膜时，产生的ITO膜2的小瘤若被清洗掉也会形成膜面小孔22。
S103、如图5所示，在所述第一层膜201上第二层膜202，所述第二层膜202的材料与第一层膜201的材料相同，也就是说，所述第二层膜202的材料也优选的为氧化铟锡。
不难理解的是，本发明只是将现有一次形成膜层工艺分两次进行，两次形成的膜的材料应该相同。图5中第二层膜202上也仅画出了1个异物21，不代表实际数量，因为每次形成膜时异物21的位置是不确定的，但可以理解的是，两次形成的膜在同一个位置均上有异物21的概率极小。
需要进一步说明的是，形成膜的次数越多，那么产生膜面小孔22的概率就越小（两次形成的膜在同一个位置产生膜面小孔22的概率极小，三次形成的膜在同一个位置产生膜面小孔22的概率更小），在不考虑生产成本的情况下，也是可行的，但是显然将形成膜的次数增加到三次或三次以上对改善效果并不会有明显的变化，意义不大。
优选的是，形成第二层膜202采用蒸镀工艺、溅射工艺、化学气相沉积工艺、喷涂中的一种。
需要说明的是，形成膜的方式有很多种，例如蒸镀工艺、溅射工艺、化学气相沉积工艺、喷涂等。本实施例优选的是溅射工艺，这是因为通过溅射工艺形成的膜的密度高、针孔少、膜层纯度高，并且膜层厚度的可控性和重复性好。
另外溅射工艺通常分为直流溅射工艺和射频溅射工艺两种，本实施例优选的采用直流溅射，这是因为射频溅射工艺对设备要求严格，成本较高。
优选的是，所述形成第二层膜202的条件包括：
工作真空度在0.1到1Pa之间；
工作温度为110℃到150℃之间；
工作气体为氩氧混合气，其中氧气体积百分比占1%到3%。
显然，形成第二层膜202的条件优选的与形成第一层膜201的条件相同，无需变形成膜时的条件，只要将形成第一层膜201并清洗后的基板重新投入到形成第一层膜201时使用的设备中即可实现形成第二层膜202，这样的设计有利于自动化生产和流水线作业。
进一步优选的是，所述第二层膜202的厚度在50nm到100nm之间。
需要说明的是，所述第二层膜202的厚度可以根据已经形成的第一层膜201的厚度进行适应性调整，只要使得第一层膜201的厚度与第二层膜202的厚度之和优选的为150nm即可。所以，优选的，第一层膜201的厚度和第二层膜202厚度相同，即第一层膜201和第二层膜202的厚度均为75nm，可见厚度和为150nm，不难理解的是，这样的设计可以保证在单件产品生产时间固定的情况下，两次形成膜时的设备的功率是相同的（单件产品生产时间不变，膜的厚度与设备功率成正比），也就保证了，在形成膜时，各项工艺条件是确认不变的，有利于生产。
进一步优选的是，采用溅射工艺形成第二层膜202时控制设备功率，使溅射形成的第二层膜202的小瘤的尺寸小于50微米。
具体的说，形成第二层膜202时设备的功率优选的控制在6.8kW到7.8kW之间。
不难理解的是，优选的形成第一层膜201时设备的功率和形成第二层膜202时设备的功率都优选的为7.3Kw，即保证了两次形成的膜的厚度相同，利于生产。当然，形成第一层膜201时设备的功率和形成第二层膜202时设备的功率优选的为7.3Kw是在单件产品生产时间为35s时对应的功率，当单件产品生产时间变化时，相关设备的功率也会随之变化，事实上，只要确保形成第一层膜201和形成第二层膜202的小瘤的尺寸均小于50微米即可。
S104、对所述第二层膜202进行第二次清洗。
优选的是，所述第二次清洗包括纯水冲洗和气体冲洗，用于除去第二层膜202上的异物21和小瘤。
具体的，所述第二次清洗包括：
纯水冲洗同时配合毛刷转运清洁，流速在145L/min到150L/min之间，优选的为150L/min；
纯水和干净空气冲洗，二流体（纯水和干净空气）流速在55L/min到60L/min之间，优选的为60L/min；
纯水润洗，流速在135L/min到140L/min之间，优选的为138L/min；
空气刀吹干，流速在3300L/min到3500L/min之间，优选的为3400L/min。
如图6所示，经过第二次清洗，会将第二层膜202上的异物21洗去，形成膜面小孔22，因为第一层膜201和第二层膜202上膜面小孔22的位置不同，因此即使在其中一层膜上某个位置有膜面小孔22，但是整体膜层不会出现如图2中所示的情况（膜面小孔22处没有任何膜层材料），也就不会影响成像效果。不难理解的是，第二次清洗与第一次清洗条件相同，可以提高清洗设备的利用率，提高效率。
需要说明的是，在进行本实施例提供的形成膜层的方法之前，还包括一些其他常规步骤，例如OC工序（形成OC平坦化层）和前清洗工序；同时在本实施例提供的形成膜层的方法之后，也包括一些其他常规步骤，例如烘烤工序和检测工序等等，本发明不做限定。
另外，本实施例提供的形成膜层的方法可以用来制备其他膜层，也可以在形成膜层后进行构图工艺，用膜层形成引线、像素电极等（即最终膜层可以不是完整的“膜层”，而是图案化的膜层）。
由于本实施例的形成膜层的方法中包括两次形成膜的步骤，并在每次形成膜后进行清洗，因此尽管在两次形成的膜都有可能会产生膜面小孔22，但是同一个位置两次形成的膜均产生膜面小孔22的概率极低，即两次形成的膜的膜层互相补偿由单次形成的膜所产生的膜面小孔22，避免了膜面小孔22对整体膜层的影响，减少了因膜面小孔22问题导致的面板成像不良。另外，因为形成膜层的工艺是分两次进行的，那么每次形成膜时设备的功率降低，减少了小瘤的产生，不仅降低了膜面小孔22产生的概率，更是进一步保证了膜层品质（膜面特性面电阻、透过率更稳定），同时膜面凸起减少，减少后续修补打磨时间，提高整条产线的稼动率。
实施例2：
本实施例提供一种基板，包括由上述形成膜层的方法制得的膜层。
优选的是，所述基板为彩膜基板，所述膜层作为公共电极。
优选的是，所述膜层的厚度在135nm到150nm之间。
优选的是，所述膜层的材料为导电材料；进一步优选，所述膜层的材料为氧化铟锡。
由于本实施例的基板的形成膜层的工艺分两次进行，并在每次形成膜后进行清洗，因此尽管在两次形成的膜都有可能会产生膜面不良，如膜面小孔，但是同一个位置两次形成的膜均产生膜面小孔的概率极低，即两次形成的膜的膜层互相补偿由单次形成的膜所产生的膜面小孔，避免了膜面小孔对整体膜层的影响，减少了因膜面小孔问题导致的面板成像不良。另外，因为形成膜层的工艺是分两次进行的，那么每次形成膜时的功率降低，减少了小瘤的产生，不仅降低了膜面小孔产生的概率，更是进一步保证了膜面品质（膜面特性面电阻、透过率更稳定），同时也减少了因小瘤所引起的后续修补时间，提高了生产效率，确保了基板的品质良好。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (11)

1.一种形成膜层的方法，其特征在于，包括：
在基板上形成第一层膜；
对所述第一层膜进行第一次清洗；
在所述第一层膜上形成第二层膜，所述第二层膜的材料与第一层膜的材料相同；
对所述第二层膜进行第二次清洗；其中
形成所述第一层膜和所述第二层膜时，设备功率为6.8KW～7.8KW。
2.根据权利要求1所述的形成膜层的方法，其特征在于，
形成第一层膜的厚度与形成第二层膜的厚度的比值范围为0.5至2。
3.根据权利要求2所述的形成膜层的方法，其特征在于，形成第一层膜的厚度与形成第二层膜的厚度相同。
4.根据权利要求1所述的形成膜层的方法，其特征在于，所述形成第一层膜采用蒸镀工艺、溅射工艺、化学气相沉积工艺、喷涂中的一种；
和/或
形成第二层膜采用蒸镀工艺、溅射工艺、化学气相沉积工艺、喷涂中的一种。
5.根据权利要求4所述的形成膜层的方法，其特征在于，采用溅射工艺形成第一层膜和形成第二层膜控制设备功率，使溅射形成的第一层膜和第二层膜的小瘤的尺寸小于50微米。
6.根据权利要求1所述的形成膜层的方法，其特征在于，所述第一次清洗和所述第二次清洗包括纯水冲洗和气体冲洗，用于除去第一层膜和第二层膜上的异物和小瘤。
7.根据权利要求1所述的形成膜层的方法，其特征在于，所述第一层膜的材料和所述第二层膜的材料为金属或金属氧化物。
8.根据权利要求7所述的形成膜层的方法，其特征在于，所述第一层膜的材料和所述第二层膜的材料为氧化铟锡。
9.一种基板，其特征在于，包括由权利要求1至8中任意一项所述形成膜层的方法制得的膜层。
10.根据权利要求9所述的基板，其特征在于，所述基板为彩膜基板，所述膜层作为公共电极。
11.根据权利要求10所述的基板，其特征在于，所述膜层的厚度在135nm到150nm之间。
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