CN103403889A - 半导体发光二极管 - Google Patents
半导体发光二极管 Download PDFInfo
- Publication number
- CN103403889A CN103403889A CN2012800108354A CN201280010835A CN103403889A CN 103403889 A CN103403889 A CN 103403889A CN 2012800108354 A CN2012800108354 A CN 2012800108354A CN 201280010835 A CN201280010835 A CN 201280010835A CN 103403889 A CN103403889 A CN 103403889A
- Authority
- CN
- China
- Prior art keywords
- interconnection layer
- side interconnection
- layer
- inorganic insulating
- interconnecting parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 133
- 239000012528 membrane Substances 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 43
- 229920005989 resin Polymers 0.000 claims description 31
- 239000011347 resin Substances 0.000 claims description 31
- 238000000576 coating method Methods 0.000 claims description 30
- 239000011248 coating agent Substances 0.000 claims description 29
- 239000000843 powder Substances 0.000 claims description 10
- 239000011810 insulating material Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 description 43
- 239000002184 metal Substances 0.000 description 41
- 238000009434 installation Methods 0.000 description 20
- 239000000463 material Substances 0.000 description 17
- 229910002601 GaN Inorganic materials 0.000 description 7
- 229910003564 SiAlON Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-110372 | 2011-05-17 | ||
JP2011110372A JP5642623B2 (ja) | 2011-05-17 | 2011-05-17 | 半導体発光装置 |
PCT/JP2012/000469 WO2012157150A1 (en) | 2011-05-17 | 2012-01-25 | Semicondutor light emitting diode |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103403889A true CN103403889A (zh) | 2013-11-20 |
CN103403889B CN103403889B (zh) | 2016-09-14 |
Family
ID=45852650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280010835.4A Active CN103403889B (zh) | 2011-05-17 | 2012-01-25 | 半导体发光二极管 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9006766B2 (zh) |
EP (1) | EP2710645B1 (zh) |
JP (1) | JP5642623B2 (zh) |
CN (1) | CN103403889B (zh) |
HK (1) | HK1191731A1 (zh) |
TW (1) | TWI482315B (zh) |
WO (1) | WO2012157150A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108365068A (zh) * | 2017-01-26 | 2018-08-03 | 晶元光电股份有限公司 | 发光元件 |
WO2019169755A1 (zh) * | 2018-03-08 | 2019-09-12 | 昆山工研院新型平板显示技术中心有限公司 | 一种Micro-LED芯片、显示屏及制备方法 |
CN111048644A (zh) * | 2014-12-16 | 2020-04-21 | 晶元光电股份有限公司 | 发光元件 |
US10636940B2 (en) | 2015-09-16 | 2020-04-28 | Samsung Electronics Co., Ltd. | Semiconductor light-emitting device |
US10861834B2 (en) | 2018-03-08 | 2020-12-08 | Kunshan New Flat Panel Display Technology Center Co., Ltd. | Micro-LED chips, display screens and methods of manufacturing the same |
CN112470297A (zh) * | 2019-06-06 | 2021-03-09 | 新唐科技日本株式会社 | 半导体发光元件以及半导体发光装置 |
CN112802934A (zh) * | 2021-03-19 | 2021-05-14 | 华引芯(武汉)科技有限公司 | 一种用于芯片级封装的发光元件及其制备方法和封装结构 |
CN113661579A (zh) * | 2019-04-01 | 2021-11-16 | 莱太柘晶电株式会社 | 发光二极管芯片级封装及其制造方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103959487B (zh) * | 2011-12-08 | 2016-11-16 | 皇家飞利浦有限公司 | 半导体发光器件及其制造方法 |
WO2013118072A2 (en) | 2012-02-10 | 2013-08-15 | Koninklijke Philips N.V. | Wavelength converted light emitting device |
US9608016B2 (en) * | 2012-05-17 | 2017-03-28 | Koninklijke Philips N.V. | Method of separating a wafer of semiconductor devices |
TWI489658B (zh) * | 2012-05-25 | 2015-06-21 | Toshiba Kk | 半導體發光裝置及光源單元 |
JP6307907B2 (ja) * | 2013-02-12 | 2018-04-11 | 日亜化学工業株式会社 | 発光素子の製造方法 |
JP6180801B2 (ja) * | 2013-06-07 | 2017-08-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR102235020B1 (ko) | 2013-07-03 | 2021-04-02 | 루미리즈 홀딩 비.브이. | 금속화 층 아래에 스트레스-버퍼 층을 가지는 led |
EP3118904B1 (en) * | 2013-07-18 | 2023-07-05 | Lumileds LLC | Dicing a wafer of light emitting semiconductor devices |
JP6136737B2 (ja) * | 2013-08-09 | 2017-05-31 | 日亜化学工業株式会社 | 発光素子 |
US20150325748A1 (en) * | 2014-05-07 | 2015-11-12 | Genesis Photonics Inc. | Light emitting device |
TWI641285B (zh) | 2014-07-14 | 2018-11-11 | 新世紀光電股份有限公司 | 發光模組與發光單元的製作方法 |
KR102224901B1 (ko) * | 2014-12-08 | 2021-03-09 | 엘지디스플레이 주식회사 | 발광 다이오드 소자, 발광 다이오드 패키지 및 백라이트 유닛 |
CN110993765A (zh) | 2015-02-17 | 2020-04-10 | 新世纪光电股份有限公司 | 具有布拉格反射镜的发光二极管及其制造方法 |
KR102346628B1 (ko) * | 2015-06-22 | 2022-01-03 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 및 발광소자 패키지 |
TWI720053B (zh) * | 2016-11-09 | 2021-03-01 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
DE102017110076B4 (de) * | 2017-05-10 | 2024-08-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements |
JP6536859B2 (ja) * | 2017-06-22 | 2019-07-03 | サンケン電気株式会社 | 発光装置 |
KR102606922B1 (ko) | 2018-07-06 | 2023-11-27 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
KR102147443B1 (ko) * | 2018-10-25 | 2020-08-28 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
TWI787890B (zh) * | 2021-06-30 | 2022-12-21 | 錼創顯示科技股份有限公司 | 微型發光二極體顯示裝置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1588657A (zh) * | 2004-07-02 | 2005-03-02 | 北京工业大学 | 高抗静电高效发光二极管及制作方法 |
US20100148198A1 (en) * | 2008-12-12 | 2010-06-17 | Kabushiki Kaisha Toshiba | Light emitting device and method for manufacturing same |
CN101989573A (zh) * | 2009-08-03 | 2011-03-23 | 株式会社东芝 | 半导体发光装置制造方法 |
TW201112455A (en) * | 2009-09-25 | 2011-04-01 | Toshiba Kk | Semiconductor light-emitting device and method for manufacturing same |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000244012A (ja) | 1998-12-22 | 2000-09-08 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子の製造方法 |
JP2001257226A (ja) * | 2000-03-10 | 2001-09-21 | Hitachi Ltd | 半導体集積回路装置 |
JP3589187B2 (ja) | 2000-07-31 | 2004-11-17 | 日亜化学工業株式会社 | 発光装置の形成方法 |
JP4201609B2 (ja) * | 2003-01-24 | 2008-12-24 | 三洋電機株式会社 | 半導体発光素子および半導体素子 |
JP3943515B2 (ja) * | 2003-03-20 | 2007-07-11 | ローム株式会社 | 半導体装置の製造方法 |
JP4303776B2 (ja) * | 2003-11-28 | 2009-07-29 | 学校法人 名城大学 | SiC半導体、半導体用基板、粉末及び発光ダイオード |
CN100487931C (zh) | 2004-09-27 | 2009-05-13 | 松下电器产业株式会社 | 半导体发光元件及其制造方法和安装方法、发光器件 |
DE102007047247A1 (de) * | 2006-10-02 | 2008-05-15 | Samsung Electronics Co., Ltd., Suwon | Halbleiterbauelement und Herstellungsverfahren |
JP5060823B2 (ja) * | 2007-04-24 | 2012-10-31 | エルシード株式会社 | 半導体発光素子 |
TWI361497B (en) * | 2007-08-20 | 2012-04-01 | Delta Electronics Inc | Light-emitting diode apparatus and manufacturing method thereof |
JP2010087292A (ja) * | 2008-09-30 | 2010-04-15 | Toyoda Gosei Co Ltd | 発光素子 |
JP4799606B2 (ja) | 2008-12-08 | 2011-10-26 | 株式会社東芝 | 光半導体装置及び光半導体装置の製造方法 |
JP5246032B2 (ja) * | 2009-02-27 | 2013-07-24 | 日亜化学工業株式会社 | 発光素子及び発光素子の製造方法 |
JP5378130B2 (ja) | 2009-09-25 | 2013-12-25 | 株式会社東芝 | 半導体発光装置 |
JP5534763B2 (ja) | 2009-09-25 | 2014-07-02 | 株式会社東芝 | 半導体発光装置の製造方法及び半導体発光装置 |
JP5349260B2 (ja) * | 2009-11-19 | 2013-11-20 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP5414579B2 (ja) * | 2009-11-19 | 2014-02-12 | 株式会社東芝 | 半導体発光装置 |
JP5101645B2 (ja) | 2010-02-24 | 2012-12-19 | 株式会社東芝 | 半導体発光装置 |
JP5202559B2 (ja) | 2010-03-09 | 2013-06-05 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP5197654B2 (ja) * | 2010-03-09 | 2013-05-15 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP2011199193A (ja) | 2010-03-23 | 2011-10-06 | Toshiba Corp | 発光装置及びその製造方法 |
JP5101650B2 (ja) | 2010-03-25 | 2012-12-19 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP5325834B2 (ja) | 2010-05-24 | 2013-10-23 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP5356312B2 (ja) | 2010-05-24 | 2013-12-04 | 株式会社東芝 | 半導体発光装置 |
JP5426481B2 (ja) | 2010-05-26 | 2014-02-26 | 株式会社東芝 | 発光装置 |
JP5281612B2 (ja) | 2010-05-26 | 2013-09-04 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP2011253925A (ja) | 2010-06-02 | 2011-12-15 | Toshiba Corp | 発光装置の製造方法 |
JP2011253975A (ja) | 2010-06-03 | 2011-12-15 | Toshiba Corp | 発光装置およびその製造方法 |
TW201145614A (en) | 2010-06-03 | 2011-12-16 | Toshiba Kk | Method for manufacturing light-emitting device and light-emitting device manufactured by the same |
JP5337105B2 (ja) | 2010-06-03 | 2013-11-06 | 株式会社東芝 | 半導体発光装置 |
JP5390472B2 (ja) | 2010-06-03 | 2014-01-15 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
US20110298001A1 (en) | 2010-06-03 | 2011-12-08 | Kabushiki Kaisha Toshiba | Method for manufacturing light-emitting device and light-emitting device manufactured by the same |
JP5337106B2 (ja) | 2010-06-04 | 2013-11-06 | 株式会社東芝 | 半導体発光装置 |
JP5343040B2 (ja) | 2010-06-07 | 2013-11-13 | 株式会社東芝 | 半導体発光装置 |
-
2011
- 2011-05-17 JP JP2011110372A patent/JP5642623B2/ja active Active
-
2012
- 2012-01-25 WO PCT/JP2012/000469 patent/WO2012157150A1/en active Application Filing
- 2012-01-25 CN CN201280010835.4A patent/CN103403889B/zh active Active
- 2012-01-25 EP EP12709388.8A patent/EP2710645B1/en active Active
- 2012-02-15 TW TW101104923A patent/TWI482315B/zh active
-
2013
- 2013-08-07 US US13/961,619 patent/US9006766B2/en active Active
-
2014
- 2014-05-19 HK HK14104650.7A patent/HK1191731A1/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1588657A (zh) * | 2004-07-02 | 2005-03-02 | 北京工业大学 | 高抗静电高效发光二极管及制作方法 |
US20100148198A1 (en) * | 2008-12-12 | 2010-06-17 | Kabushiki Kaisha Toshiba | Light emitting device and method for manufacturing same |
CN101989573A (zh) * | 2009-08-03 | 2011-03-23 | 株式会社东芝 | 半导体发光装置制造方法 |
TW201112455A (en) * | 2009-09-25 | 2011-04-01 | Toshiba Kk | Semiconductor light-emitting device and method for manufacturing same |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111048644A (zh) * | 2014-12-16 | 2020-04-21 | 晶元光电股份有限公司 | 发光元件 |
US10991854B2 (en) | 2014-12-16 | 2021-04-27 | Epistar Corporation | Light-emitting element with crack preventing cushion |
US12002904B2 (en) | 2014-12-16 | 2024-06-04 | Epistar Corporation | Light-emitting element with cushion part |
US10636940B2 (en) | 2015-09-16 | 2020-04-28 | Samsung Electronics Co., Ltd. | Semiconductor light-emitting device |
CN108365068A (zh) * | 2017-01-26 | 2018-08-03 | 晶元光电股份有限公司 | 发光元件 |
CN108365068B (zh) * | 2017-01-26 | 2022-01-04 | 晶元光电股份有限公司 | 发光元件 |
WO2019169755A1 (zh) * | 2018-03-08 | 2019-09-12 | 昆山工研院新型平板显示技术中心有限公司 | 一种Micro-LED芯片、显示屏及制备方法 |
CN110246931A (zh) * | 2018-03-08 | 2019-09-17 | 昆山工研院新型平板显示技术中心有限公司 | 一种Micro-LED芯片、显示屏及制备方法 |
US10861834B2 (en) | 2018-03-08 | 2020-12-08 | Kunshan New Flat Panel Display Technology Center Co., Ltd. | Micro-LED chips, display screens and methods of manufacturing the same |
CN113661579A (zh) * | 2019-04-01 | 2021-11-16 | 莱太柘晶电株式会社 | 发光二极管芯片级封装及其制造方法 |
CN112470297A (zh) * | 2019-06-06 | 2021-03-09 | 新唐科技日本株式会社 | 半导体发光元件以及半导体发光装置 |
CN112802934A (zh) * | 2021-03-19 | 2021-05-14 | 华引芯(武汉)科技有限公司 | 一种用于芯片级封装的发光元件及其制备方法和封装结构 |
Also Published As
Publication number | Publication date |
---|---|
TW201248923A (en) | 2012-12-01 |
JP2012243849A (ja) | 2012-12-10 |
EP2710645A1 (en) | 2014-03-26 |
EP2710645B1 (en) | 2016-09-14 |
TWI482315B (zh) | 2015-04-21 |
US20130320382A1 (en) | 2013-12-05 |
US9006766B2 (en) | 2015-04-14 |
WO2012157150A1 (en) | 2012-11-22 |
CN103403889B (zh) | 2016-09-14 |
JP5642623B2 (ja) | 2014-12-17 |
HK1191731A1 (zh) | 2014-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103403889A (zh) | 半导体发光二极管 | |
CN103403888B (zh) | 半导体发光器件及其制造方法 | |
US8329482B2 (en) | White-emitting LED chips and method for making same | |
JP5414579B2 (ja) | 半導体発光装置 | |
US9349712B2 (en) | Doubled substrate multi-junction light emitting diode array structure | |
JP5710532B2 (ja) | 半導体発光装置及びその製造方法 | |
EP2388838B1 (en) | Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same | |
CN103403895B (zh) | 半导体发光器件 | |
JP2020150274A (ja) | 発光デバイスを支持基板に取り付ける方法 | |
JP2017108156A (ja) | 支持基板に接合された発光デバイス | |
JP2011249425A (ja) | 半導体発光装置 | |
CN104396032A (zh) | 设置有在其后侧上具有图案的基板的发光二极管及其制造方法 | |
CN102593316A (zh) | 晶片级发光装置封装件及其制造方法 | |
KR101158077B1 (ko) | 고효율 발광 다이오드 및 그것을 제조하는 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1191731 Country of ref document: HK |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: GR Ref document number: 1191731 Country of ref document: HK |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180711 Address after: Tokyo, Japan Patentee after: Toshiba electronic components and storage plant Address before: Tokyo, Japan, Japan Patentee before: Toshiba Corp |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180921 Address after: Gyeonggi Do, South Korea Patentee after: SAMSUNG ELECTRONICS CO., LTD. Address before: Tokyo, Japan Patentee before: Toshiba electronic components and storage plant |