CN103378168A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN103378168A CN103378168A CN2013101288717A CN201310128871A CN103378168A CN 103378168 A CN103378168 A CN 103378168A CN 2013101288717 A CN2013101288717 A CN 2013101288717A CN 201310128871 A CN201310128871 A CN 201310128871A CN 103378168 A CN103378168 A CN 103378168A
- Authority
- CN
- China
- Prior art keywords
- high concentration
- conductivity type
- conductive high
- concentration region
- withstand voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000005304 joining Methods 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 9
- 238000002955 isolation Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 abstract 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 17
- 230000005684 electric field Effects 0.000 description 8
- 238000009413 insulation Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 241000272525 Anas platyrhynchos Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 235000014347 soups Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012094089A JP6001309B2 (ja) | 2012-04-17 | 2012-04-17 | 半導体装置 |
JP2012-094089 | 2012-04-17 | ||
JPJP2012-094089 | 2012-04-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103378168A true CN103378168A (zh) | 2013-10-30 |
CN103378168B CN103378168B (zh) | 2017-06-20 |
Family
ID=49379329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310128871.7A Active CN103378168B (zh) | 2012-04-17 | 2013-04-15 | 半导体装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US9177954B2 (zh) |
JP (1) | JP6001309B2 (zh) |
KR (1) | KR102050703B1 (zh) |
CN (1) | CN103378168B (zh) |
TW (1) | TWI589007B (zh) |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06104455A (ja) * | 1992-09-21 | 1994-04-15 | Hitachi Ltd | pn接合ダイオードおよびこれを用いた半導体集積回路装置 |
EP0643418B1 (en) * | 1993-09-10 | 1998-12-02 | STMicroelectronics S.r.l. | Process for the manufacture of a Zener Diode for flash-EEPROM devices |
JPH08227999A (ja) * | 1994-12-21 | 1996-09-03 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ及びその製造方法並びに半導体集積回路及びその製造方法 |
JP4033513B2 (ja) * | 1997-02-24 | 2008-01-16 | ローム株式会社 | クランプ素子 |
JP3730394B2 (ja) * | 1997-03-18 | 2006-01-05 | 株式会社東芝 | 高耐圧半導体装置 |
JP3472476B2 (ja) | 1998-04-17 | 2003-12-02 | 松下電器産業株式会社 | 半導体装置及びその駆動方法 |
JP3905981B2 (ja) * | 1998-06-30 | 2007-04-18 | 株式会社東芝 | 高耐圧半導体装置 |
JP4016595B2 (ja) * | 2000-12-12 | 2007-12-05 | サンケン電気株式会社 | 半導体装置及びその製造方法 |
US7667268B2 (en) * | 2002-08-14 | 2010-02-23 | Advanced Analogic Technologies, Inc. | Isolated transistor |
TW560042B (en) * | 2002-09-18 | 2003-11-01 | Vanguard Int Semiconduct Corp | ESD protection device |
JP4469584B2 (ja) * | 2003-09-12 | 2010-05-26 | 株式会社東芝 | 半導体装置 |
JP2007134596A (ja) * | 2005-11-11 | 2007-05-31 | Matsushita Electric Ind Co Ltd | サージ保護用半導体装置 |
JP5493435B2 (ja) * | 2009-04-08 | 2014-05-14 | 富士電機株式会社 | 高耐圧半導体装置および高電圧集積回路装置 |
JP5012978B2 (ja) * | 2009-09-30 | 2012-08-29 | 株式会社デンソー | 半導体装置およびその製造方法 |
-
2012
- 2012-04-17 JP JP2012094089A patent/JP6001309B2/ja active Active
-
2013
- 2013-04-02 TW TW102111875A patent/TWI589007B/zh active
- 2013-04-03 US US13/855,781 patent/US9177954B2/en not_active Expired - Fee Related
- 2013-04-15 CN CN201310128871.7A patent/CN103378168B/zh active Active
- 2013-04-16 KR KR1020130041605A patent/KR102050703B1/ko active IP Right Grant
-
2015
- 2015-06-22 US US14/746,018 patent/US20150287714A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR102050703B1 (ko) | 2019-12-02 |
JP6001309B2 (ja) | 2016-10-05 |
CN103378168B (zh) | 2017-06-20 |
TW201405837A (zh) | 2014-02-01 |
US9177954B2 (en) | 2015-11-03 |
JP2013222854A (ja) | 2013-10-28 |
US20130277792A1 (en) | 2013-10-24 |
TWI589007B (zh) | 2017-06-21 |
KR20130117683A (ko) | 2013-10-28 |
US20150287714A1 (en) | 2015-10-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160401 Address after: Chiba County, Japan Applicant after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba County, Japan Applicant before: Seiko Instruments Inc. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: DynaFine Semiconductor Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Nagano Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: ABLIC Inc. |
|
CP02 | Change in the address of a patent holder |