CN103367170A - 衬底和用于制造至少一个功率半导体器件的衬底的方法 - Google Patents
衬底和用于制造至少一个功率半导体器件的衬底的方法 Download PDFInfo
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Abstract
本发明涉及衬底和用于制造至少一个功率半导体器件的衬底的方法。衬底带有第一和第二金属化层(2a、2b),该方法具有方法步骤:a)制备不导电的绝缘材料本体(1);b)将第二金属化层施加到绝缘材料本体(1)的与绝缘材料本体(1)的第一侧(15a)对置的第二侧(15b)上;c)将不导电的漆层(3)施加到第二金属化层上,漆层(3)具有凹部(13);d)在第二金属化层上将突起(6、6’)电沉积在漆层(3)具有凹部(13)的部位上。此外,本发明还涉及一种衬底(7、7’、7’’)。本发明实现了对布置在衬底上的功率半导体器件(10a、10b)的可靠的冷却。
Description
技术领域
本发明涉及一种用于制造至少一个功率半导体器件的衬底的方法以及与此相关的衬底。
背景技术
功率半导体器件例如尤其用于电压和电流的整流和逆变,其中通常多个功率半导体器件例如为了实现变流器而彼此电连接。功率半导体器件在此通常被布置在衬底上,该衬底通常直接或间接地与冷却体相连。
在功率半导体器件,例如IGBT(绝缘栅双极型晶体管)、MOSFET(金属氧化物半导体场效晶体管)、晶闸管或二极管运行时,在功率半导体器件中出现了热形式的损耗能量,其导致功率半导体器件发热。该热从功率半导体器件经由衬底传递给冷却体并且从那里被排放给气态的冷却介质(例如环境空气)或液态的冷却介质(例如水)。
衬底和冷却体在现有技术中由两个单独的器件构成并且由于所使用的材料不同(例如铜或铝用于冷却体以及例如Cu-Al2O3-Cu复合材料用于衬底(DCB衬底))而具有不同的纵向热膨胀系数。由此在发热时产生的不同纵向膨胀导致了机械应力以及在冷却体与衬底的连接在由于温度变换造成的热负荷下快速老化,该连接通常以焊接连接或烧结连接的形式存在。基于此,会出现衬底与冷却体的连接的分离,这可能导致功率半导体器件故障或损毁,因为功率半导体器件不再被充分冷却。
发明内容
本发明的任务是,保证布置在衬底上的功率半导体器件的可靠冷却。
该任务通过一种用于制造至少一个功率半导体器件的衬底的方法来解决,该方法具有如下方法步骤:
a)制备不导电的绝缘材料本体;
b)将第二金属化层施加在绝缘材料本体的与绝缘材料本体的第一侧对置布置的第二侧上;
c)将不导电的漆层施加到第二金属化层上,其中,漆层具有凹部;
d)在第二金属化层上将突起电沉积在漆层具有凹部的部位上。
此外,该任务还通过用于至少一个功率半导体器件的衬底来解决,其中,衬底具有绝缘材料本体、布置在该绝缘材料本体的第一侧上的结构化的第一金属化层和布置在绝缘材料本体的第二侧上的第二金属化层,其中,绝缘材料本体的第二侧与绝缘材料本体的第一侧对置地布置,其中,在第一金属化层上布置有第一金属层以及在第二金属化层上布置由金属构成的突起。
该方法的有利构造方案与衬底的有利构造方案类似地得到,反之亦然。
本发明的有利构造方案由从属权利要求得到。
证明为有利的是,在方法步骤b)中附加地
将结构化的第一金属化层施加到绝缘材料本体的第一侧上
以及在方法步骤d)中附加地进行第一金属层在第一金属化层上的沉积。
证明为有利的是,第一金属化层和第二金属化层含有银和/或铜,因为由此实现了在绝缘材料本体上的突起和第一金属层的高导热性。
此外还证明为有利的是,突起由铜构成,因为铜具有高导热性。
此外,证明为有利的是,第一金属层由铜构成,因为铜具有高导热率和导电性。
此外证明为有利的是,突起具有300μm至1000μm的高度,因为然后在衬底与板或冷却体之间的热应力可以特别良好地借助突起来补偿。
此外证明为有利的是,突起构建被冷却介质绕流的冷却销(Kuehlfinger),用于冷却至少一个功率半导体器件。冷却销这样与衬底一体式构造,也就是说,冷却体是衬底的组成部分,这能够实现特别可靠且有效的冷却。
此外证明为有利的是,突起具有1500μm的高度,因为然后冷却销保证了特别有效的冷却。
此外证明为有利的是,在电沉积突起之后进行漆层的去除,并且接着进行第二金属层在突起上的电沉积。第二金属层形成了用于突起的保护层,其保护突起而防止与冷却介质化学反应。优选地,第二金属层由镍构成,因为镍尤其在使用水作为冷却介质时保护突起而防止与水以及与可能时溶解在水中的气体化学反应。
此外,证明为有利的是,进行至少一个功率半导体器件与第一金属层的连接以及突起与板或冷却体的连接,因为这样可以以简单的方式和方法制造功率半导体模块。
此外,证明为有利的是,借助烧结连接或焊接连接进行各连接,因为烧结连接或焊接连接是在功率半导体模块中常用的连接。
此外,证明为有利的是,突起与板或冷却体连接以及至少一个功率半导体器件与第一金属层连接,因为这样可以以简单的方式和方法制造功率半导体模块。
此外,证明为有利的是,至少一个功率半导体器件与第一金属层连接以及突起构建可被冷却介质绕流的冷却销,用于冷却至少一个功率半导体器件。冷却销这样与衬底一体式构造,也就是说,冷却体是衬底的组成部分,这实现了特别可靠且有效的冷却。
附图说明
本发明的实施例在附图中示出并且在下文中详细阐释。其中:
图1以示意性剖面图的形式示出了在实施根据本发明的第一方法步骤之后的衬底坯件;
图2以示意性剖面图的形式示出了在实施根据本发明的另一方法步骤之后的衬底坯件;
图3以示意性剖面图的形式示出了在实施根据本发明的另一方法步骤之后的根据本发明的衬底;
图4和图6以示意性剖面图的形式示出了在实施根据本发明的另一方法步骤之后的根据本发明的功率半导体模块;
图5示出了从下方看衬底坯件的与图2相关的示意性视图;
图7以示意性剖面图的形式示出了根据本发明的功率半导体模块的另一构造方案;以及
图8以示意性剖面图的形式示出了根据本发明的功率半导体模块的另一构造方案。
具体实施方式
在图1中以示意性剖面图的形式示出了在实施根据本发明的第一方法步骤之后的衬底坯件7a。在第一方法步骤中,将结构化的第一金属化层2a施加到不导电的绝缘材料本体1的第一侧15a上以及将第二金属化层2b施加到绝缘材料本体1的与绝缘材料本体1的第一侧15a对置的第二侧15b上。绝缘材料本体1这样布置在第一金属化层2a与第二金属化层2b之间。绝缘材料本体1例如可以由陶瓷,例如Al2O3或AlN构成,并且例如具有300μm至1000μm的厚度。金属化层2a和2b例如可以基本上由铜和/或银或由铜合金和/或银合金构成。金属化层2a和2b优选具有5μm至25μm的厚度。第一金属化层2a具有根据印制导线的特定走向构造的结构。这样,第一金属化层2a例如在本实施例的范围中具有缺口4。第二金属化层2b优选未被结构化,但同样可以结构化地实施。
第一金属化层和第二金属化层施加到绝缘材料本体1的第一侧和第二侧上,优选其方式是,首先将含有例如含铜或含银的颗粒和溶剂的金属化糊料在应当存在金属化层的部位上涂覆到绝缘材料本体1的第一侧15a和第二侧15b上,接着金属化糊料例如在180℃下被干燥以及接着在炉中,优选在真空中,优选被加热到约1000℃,以及被这样焙烧。在此要注意的是,在第一方法步骤中,无必须一定将结构化的第一金属化层2a施加到不导电的绝缘材料本体1的第一侧15a上,而是也可以在该方法开始之前就已经将结构化的第一金属化层12a施加到绝缘材料本体1上。
在此要注意的是,在图1至图8中都是示意图且层厚均不是按比例地示出。
在图2中以示意性剖面图的形式示出了在实施根据本发明的另一方法步骤之后的衬底坯件7a。在图5中示出了从下方看衬底坯件7a的与图2相关的示意性视图。在该方法步骤中,不导电的漆层3被施加到第二金属化层2b上,其中,漆层具有凹部13。凹部13如图5所示优选具有圆形的形状,但当然也可以具有任意其他形状,尤其是长形形状。凹部13优选如图5所示矩阵状地布置。凹部13优选彼此等距间隔地布置。漆层3优选具有5μm至25μm的厚度。
在本实施例的范围中,漆层3的施加借助丝网印刷工艺来进行以及接着对漆层进行热干燥。在此所使用的丝网的凹部的形状确定漆层3的凹部13的形状。在此使用的漆优选构造为厚层漆。
但对此可替选地,也可以通过如下方式进行漆层3的施加,即,用光刻的漆,尤其是用光刻的厚层漆给第二金属化层2b涂层,接着通过光掩模将漆被曝光,用以产生所期望的形状的凹部,以及接着被曝光的漆被显影,以及未被曝光的漆优选借助溶剂去除。
在图3中以示意性剖面图的形式示出了在执行另一根据本发明的方法步骤之后的根据本发明的衬底7。在该方法步骤中,将第一金属层5沉积在第一金属化层2a上,以及在第二金属化层2b上在漆层3具有凹部13的部位上电沉积突起6。为此,衬底坯件7a浸入填充有电镀液的容器中并且第一金属化层2a和第二金属化层2b与电压源的负极相连而设置在电镀液中的电极与该电压源的正极相连,使得电流开始流动且第一金属层5在第一金属化层2a上沉积以及突起6在第二金属化层2b上沉积在漆层3具有凹部13的部位上。在此,电镀液在本实施例的范围中含有铜离子,使得第一金属层5和突起6在该实施例中由铜构成。在此要注意的是,在本方法步骤中,不必一定如在该实施例中那样将第一金属层5电沉积在第一金属化层2a上,而是例如也在电沉积之前可以用电绝缘的漆遮盖第一金属化层2a,使得不会进行第一金属层5在第一金属化层2a上的电沉积。
第一金属层5优选具有100μm至400μm的厚度,尤其具有100μm至300μm的厚度。突起6优选具有300μm至1000μm的高度。突起6的至少一个离开绝缘材料本体1的第二侧15b延伸的侧壁17优选具有凸起的形状。因为在本实施例中,第一金属层5的厚度比突起6的高度小得多,所以在本实施例的范围中在电沉积时,当第一金属层5达到规定厚度时,第一金属层5与电压源的电连接中断,使得在进一步电沉积时,仅突起6进一步生长直至达到规定高度h。
但也能用其他方法获得不同的沉积高度,这样例如也在第一金属层5达到规定厚度之后中断电沉积以及将不导电的漆施加到第一金属层5上以及接着继续电沉积,直至突起6达到规定高度h,其中,基于施加到第一金属层5上的漆,第一金属层5在此不进一步生长。
在本实施例的范围中,突起6具有圆形的横截面。但,突起6的横截面当然也可以具有任意其他形状,例如长形形状。横截面的表面法线的方向在此与绝缘材料本体1的第二侧15b的表面法线N的方向一致(参见图3)。突起6优选矩阵状地布置。突起6优选彼此等距间隔地布置。
漆层3或漆优选在电沉积之后又被去除。
为了制造根据本发明的功率半导体模块8,接着在图4和图6所示的另一方法步骤中将至少一个功率半导体器件与第一金属层5连接,以及将突起6与板11(参见图4)或冷却体16(参见图6)连接,冷却体例如具有冷却销16,其中,至少一个功率半导体器件与第一金属层5的连接在第一子方法步骤中进行,而突起6与板11或冷却体16的连接在第二子方法步骤中进行。第一子方法步骤在此可以在第二子方法步骤之前、与第二子方法步骤同时或在第二子方法步骤之后进行。在本实施例的范围中,第一功率半导体器件10a和第二功率半导体器件10b在此借助烧结连接或焊接连接与第一金属层5相互连接,使得在功率半导体器件10a和10b与第一金属层5之间布置有烧结层或焊接层9。此外,在本实施例的范围中,突起6借助烧结连接或焊接连接与板11或冷却体16相互连接,使得在突起6与板11或冷却体16之间布置有烧结层或焊接层12。相应烧结层在此至少主要由银构成,以及相应焊接层至少主要由锡构成。板11用于将功率半导体模块8与冷却体连接。冷却体例如可以用图4中为清楚起见而未示出的与冷却体的螺栓连接装置连接。板11在此优选以功率半导体模块8的底板的形式存在。
衬底7的突起6可以在衬底7和板11或冷却体16发热时沿水平方向弯曲,使得借助突起6可以补偿衬底7、板11或冷却体16在发热时形成的不同的纵向膨胀,从而使得不会出现衬底与板或衬底与冷却体的连接的分离,并且相应连接在长时间段中也保持稳定。
在图7中以示意性剖面图的形式示出了根据本发明的功率半导体模块8’的另一种构造方案。根据本发明的功率半导体模块8’具有根据本发明的衬底7’,该衬底7’的制造和结构都与根据图3的衬底7相一致,其中,与图3不同,突起6’为了冷却至少一个功率半导体器件而形成可被冷却介质绕流的冷却销,并且突起6’因此按本发明形成了冷却体,该冷却体是衬底7’的组成部分。冷却销因此与衬底7’一体地构造。
因此,可以通过根据本发明的集成到衬底7’中的冷却体而取消衬底7’与冷却体的连接。衬底和冷却体在发热时产生的不同的纵向膨胀因此通过根据本发明的方案基本上得到避免以及因此甚至不会产生。
为了制造冷却销,在图3中描述的突起6在较长的时间段中和/或在使用高电流强度的情况下在第二金属化层2b上电沉积在漆层3具有凹部13的部位上,使得在此产生的突起6’具有比根据图3的突起6大得多的高度h并且因此形成冷却销。突起6’优选具有至少1500μm、尤其是至少2500μm的高度h。例如空气、水或油用作冷却介质,其绕流冷却销。
突起6的至少一个离开绝缘材料本体1的第二侧15b延伸的侧壁17优选具有凸出的形状。此外,在本实施例的范围中,突起6’具有圆形的横截面。但,突起6’的横截面当然也可以具有任意其他形状,尤其是长形的形状。冷却销因此也可以以冷却肋的形式存在。因此,在此要注意的是,在本发明的意义下,冷却销的概念也包含冷却肋的概念。在此,横截面的表面法线的方向与绝缘材料本体1的第二侧15b的表面法线N的方向一致(参见图3)。突起6’优选矩阵状地布置。突起6’优选彼此等距间隔地布置。
为了制造根据本发明的功率半导体模块8’,接着在另一方法步骤中将至少一个功率半导体器件与第一金属层5连接。在本实施例的范围中,第一功率半导体器件10a和第二功率半导体器件10b在此借助烧结连接或焊接连接与第一金属层5相互连接,使得在功率半导体器件与第一金属层5之间布置有烧结层或焊接层9。相应烧结层在此至少基本上由银构成,而相应焊接层至少基本上由锡构成。
在图8中以示意性剖面图的形式示出了根据本发明的功率半导体模块8’’的另一构造方案。功率半导体模块8’’和衬底7’’基本上对应于根据图7的功率半导体模块8’和衬底7’,其中,在制造衬底7’’时附加地在突起6’电沉积在第二金属化层2b上之后去除漆层3,以及接着进行第二金属层14在突起6’上的电沉积。在本实施例的范围中,电沉积不仅在突起6’上进行,而且在第二金属化层2a的未被突起6’遮盖的表面上进行。第二金属层14优选具有1μm至10μm的厚度。第二金属层14形成对突起6’的保护层,该保护层保护突起6’以免与绕流其的冷却介质发生化学反应。第二金属层14优选由镍构成,因为镍尤其在使用水作为冷却介质时保护突起6’以免与水以及可能溶解在水中的气体发生化学反应。
在图7和图8中相同的元件设置有与在图3和图4中相同的附图标记。
在此应注意的是,尤其在烧结连接的情况下,作为两个分别有待连接的元件的连接的组成部分,两个有待连接的元件可以在要相互连接的元件的侧面上设置有例如至少基本上可以由银构成的附着连接层。
Claims (16)
1.一种用于制造至少一个功率半导体器件(10a、10b)的衬底(7、7’、7’’)的方法,该衬底带有第一金属化层和第二金属化层(2a、2b),该方法具有如下方法步骤:
a)制备不导电的绝缘材料本体(1);
b)将第二金属化层(2b)施加到绝缘材料本体(1)的与绝缘材料本体(1)的第一侧(15a)对置的第二侧(15b)上;
c)将不导电的漆层(3)施加到第二金属化层(2b)上,其中,漆层(3)具有凹部(13);
d)在第二金属化层(2b)上将突起(6、6’)电沉积在漆层(3)具有凹部(13)的部位上。
2.按权利要求1所述的方法,其特征在于,在方法步骤b)中附加地
-将结构化的第一金属化层(2a)施加到绝缘材料本体(1)的第一侧(15a)上,以及
在方法步骤d)中附加地
-将第一金属层(5)电沉积在第一金属化层(2a)上。
3.按前述权利要求之一所述的方法,其特征在于,第一金属化层和第二金属化层(2a、2b)含有银和/或铜。
4.按前述权利要求之一所述的方法,其特征在于,突起(6、6’)由铜构成。
5.按权利要求2至4之一所述的方法,其特征在于,第一金属层(5)由铜构成。
6.按前述权利要求之一所述的方法,其特征在于,突起(6)具有300μm至1000μm的高度。
7.按权利要求1至5之一所述的方法,其特征在于,突起(6’)形成能够被冷却介质绕流的冷却销(6’),用于冷却至少一个功率半导体器件(10a、10b)。
8.按权利要求1、2、3、4、5之一或7所述的方法,其特征在于,突起(6’)具有至少1500μm的高度。
9.按权利要求7或8所述的方法,其特征在于,在方法步骤d)之后实施如下其他方法步骤:
e)去除漆层(3);
f)将第二金属层(14)电沉积在突起(6)上。
10.按权利要求9所述的方法,其特征在于,所述第二金属层(14)由镍构成。
11.一种用于制造功率半导体模块(8)的方法,其中,该方法包含按权利要求2至6之一所述的用于制造至少一个功率半导体器件(10a、10b)的衬底(7)的方法,其中所述衬底(7)带有第一金属化层和第二金属化层(2a、2b),所述方法具有如下其他方法步骤:
e)将所述至少一个功率半导体器件(10a、10b)与第一金属层(5)连接,以及将突起(6)与板(11)或冷却体(16)连接。
12.一种用于制造功率半导体模块(8’、8’’)的方法,其中,该方法包含按权利要求7至10之一所述的用于制造至少一个功率半导体器件(10a、10b)的衬底(7’、7’’)的方法,所述方法具有如下其他方法步骤:
e)将所述至少一个功率半导体器件(10a、10b)与第一金属层(5)连接。
13.按权利要求11或12所述的用于制造功率半导体模块的方法,其中,借助烧结连接或焊接连接实现各连接。
14.一种用于至少一个功率半导体器件(10a、10b)的衬底,其中,衬底(7、7’、7’’)具有绝缘材料本体(1)、布置在绝缘材料本体(1)的第一侧(15a)上的结构化的第一金属化层(2a)和布置在绝缘材料本体(1)的第二侧(15b)上的第二金属化层(2b),其中,绝缘材料本体(1)的第二侧(15b)与绝缘材料本体(1)的第一侧(15a)对置地布置,其中,在第一金属化层(2a)上布置有第一金属层(5)以及在第二金属化层(2b)上布置由金属构成的突起(6、6’)。
15.一种带有按权利要求14所述的衬底的功率半导体模块,其中,突起(6)与板(11)或冷却体(16)连接以及至少一个功率半导体器件(10a、10b)与第一金属层(5)连接。
16.一种带有按权利要求14所述的衬底的功率半导体模块,其中,至少一个功率半导体器件(10a、10b)与第一金属层(5)连接以及突起(6’)形成能够被冷却介质绕流的冷却(6’),用于冷却至少一个功率半导体器件(10a、10b)。
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DE102012205240B4 (de) | 2016-08-04 |
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KR101989197B1 (ko) | 2019-06-13 |
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