CN103361727A - 蓝宝石单晶及其制备方法 - Google Patents

蓝宝石单晶及其制备方法 Download PDF

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Publication number
CN103361727A
CN103361727A CN2013101069673A CN201310106967A CN103361727A CN 103361727 A CN103361727 A CN 103361727A CN 2013101069673 A CN2013101069673 A CN 2013101069673A CN 201310106967 A CN201310106967 A CN 201310106967A CN 103361727 A CN103361727 A CN 103361727A
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CN
China
Prior art keywords
crystal
sapphire single
crucible
sapphire
preparation
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Pending
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CN2013101069673A
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English (en)
Chinese (zh)
Inventor
杉村涉
松本光二
藤原俊幸
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Sumco Corp
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Sumco Corp
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Application filed by Sumco Corp filed Critical Sumco Corp
Publication of CN103361727A publication Critical patent/CN103361727A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN2013101069673A 2012-03-30 2013-03-29 蓝宝石单晶及其制备方法 Pending CN103361727A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012081574A JP5953884B2 (ja) 2012-03-30 2012-03-30 サファイア単結晶の製造方法
JP2012-081574 2012-03-30

Publications (1)

Publication Number Publication Date
CN103361727A true CN103361727A (zh) 2013-10-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2013101069673A Pending CN103361727A (zh) 2012-03-30 2013-03-29 蓝宝石单晶及其制备方法

Country Status (3)

Country Link
JP (1) JP5953884B2 (https=)
KR (1) KR101501036B1 (https=)
CN (1) CN103361727A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104651935A (zh) * 2014-10-17 2015-05-27 洛阳市西格马炉业有限公司 一种坩埚上升法制备高品质蓝宝石晶体的方法
CN105980614B (zh) * 2013-12-03 2018-08-14 Lg矽得荣株式会社 单晶生长装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014148156A1 (ja) * 2013-03-21 2014-09-25 株式会社アライドマテリアル サファイア単結晶育成用坩堝およびサファイア単結晶育成方法
CN109112631B (zh) * 2018-10-29 2021-01-01 浙江昀丰新材料科技股份有限公司 一种蓝宝石c向长晶方法
CN111394786A (zh) * 2020-03-25 2020-07-10 哈尔滨奥瑞德光电技术有限公司 一种用于泡生法生长蓝宝石单晶的异形籽晶结构及其生长方法
CN115233299A (zh) * 2022-07-14 2022-10-25 露笑新能源技术有限公司 一种泡生法生长蓝宝石的引晶方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09278592A (ja) * 1996-04-18 1997-10-28 Mitsubishi Heavy Ind Ltd チタンを含む酸化アルミニウム単結晶の製造方法
JP2006151745A (ja) * 2004-11-29 2006-06-15 Kyocera Corp 単結晶の製造方法及びそれらを用いた酸化物単結晶
JP2007091540A (ja) * 2005-09-29 2007-04-12 Sumitomo Metal Mining Co Ltd サファイア単結晶の育成方法
JP2008007353A (ja) * 2006-06-28 2008-01-17 Sumitomo Metal Mining Co Ltd サファイア単結晶育成装置およびそれを用いた育成方法
JP2008195575A (ja) * 2007-02-14 2008-08-28 Sumitomo Metal Mining Co Ltd 酸化アルミニウム単結晶の製造方法及びこの方法を用いて得られる酸化アルミニウム単結晶
JP2008207993A (ja) * 2007-02-26 2008-09-11 Hitachi Chem Co Ltd サファイア単結晶の製造方法
JP2010006645A (ja) * 2008-06-27 2010-01-14 Kyocera Corp 単結晶育成装置用坩堝、単結晶育成方法、および単結晶育成装置
JP2011032104A (ja) * 2009-07-29 2011-02-17 Showa Denko Kk サファイア単結晶およびサファイア単結晶の製造方法
CN102197167A (zh) * 2008-12-17 2011-09-21 昭和电工株式会社 蓝宝石单晶的制造方法
CN102197166A (zh) * 2008-12-24 2011-09-21 昭和电工株式会社 蓝宝石单晶的制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4810346B2 (ja) * 2006-07-31 2011-11-09 株式会社信光社 サファイア単結晶の製造方法
JP2008266078A (ja) * 2007-04-23 2008-11-06 Shin Etsu Chem Co Ltd サファイア単結晶の製造方法
JP4835582B2 (ja) * 2007-11-16 2011-12-14 住友金属鉱山株式会社 酸化アルミニウム単結晶の製造方法
JP2010189242A (ja) * 2009-02-20 2010-09-02 Showa Denko Kk サファイア単結晶の製造方法およびサファイア単結晶引き上げ装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09278592A (ja) * 1996-04-18 1997-10-28 Mitsubishi Heavy Ind Ltd チタンを含む酸化アルミニウム単結晶の製造方法
JP2006151745A (ja) * 2004-11-29 2006-06-15 Kyocera Corp 単結晶の製造方法及びそれらを用いた酸化物単結晶
JP2007091540A (ja) * 2005-09-29 2007-04-12 Sumitomo Metal Mining Co Ltd サファイア単結晶の育成方法
JP2008007353A (ja) * 2006-06-28 2008-01-17 Sumitomo Metal Mining Co Ltd サファイア単結晶育成装置およびそれを用いた育成方法
JP2008195575A (ja) * 2007-02-14 2008-08-28 Sumitomo Metal Mining Co Ltd 酸化アルミニウム単結晶の製造方法及びこの方法を用いて得られる酸化アルミニウム単結晶
JP2008207993A (ja) * 2007-02-26 2008-09-11 Hitachi Chem Co Ltd サファイア単結晶の製造方法
JP2010006645A (ja) * 2008-06-27 2010-01-14 Kyocera Corp 単結晶育成装置用坩堝、単結晶育成方法、および単結晶育成装置
CN102197167A (zh) * 2008-12-17 2011-09-21 昭和电工株式会社 蓝宝石单晶的制造方法
CN102197166A (zh) * 2008-12-24 2011-09-21 昭和电工株式会社 蓝宝石单晶的制造方法
JP2011032104A (ja) * 2009-07-29 2011-02-17 Showa Denko Kk サファイア単結晶およびサファイア単結晶の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105980614B (zh) * 2013-12-03 2018-08-14 Lg矽得荣株式会社 单晶生长装置
US10066315B2 (en) 2013-12-03 2018-09-04 Sk Siltron Co., Ltd. Single crystal growing apparatus
CN104651935A (zh) * 2014-10-17 2015-05-27 洛阳市西格马炉业有限公司 一种坩埚上升法制备高品质蓝宝石晶体的方法
CN104651935B (zh) * 2014-10-17 2017-06-13 洛阳西格马炉业股份有限公司 一种坩埚上升法制备高品质蓝宝石晶体的方法

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JP2013209257A (ja) 2013-10-10
JP5953884B2 (ja) 2016-07-20
KR20130111253A (ko) 2013-10-10
KR101501036B1 (ko) 2015-03-10

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Application publication date: 20131023