CN103348452A - 用于从衬底选择性地移除氮化物的方法 - Google Patents

用于从衬底选择性地移除氮化物的方法 Download PDF

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Publication number
CN103348452A
CN103348452A CN2011800534639A CN201180053463A CN103348452A CN 103348452 A CN103348452 A CN 103348452A CN 2011800534639 A CN2011800534639 A CN 2011800534639A CN 201180053463 A CN201180053463 A CN 201180053463A CN 103348452 A CN103348452 A CN 103348452A
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CN
China
Prior art keywords
liquid
acid
stream
substrate
sulfuric acid
Prior art date
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Pending
Application number
CN2011800534639A
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English (en)
Chinese (zh)
Inventor
安东尼·S·拉特科维奇
杰弗里·W·布特鲍
大卫·S·贝克
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Tel Manufacturing and Engineering of America Inc
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TEL FSI Inc
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Filing date
Publication date
Application filed by TEL FSI Inc filed Critical TEL FSI Inc
Priority to CN201910535292.1A priority Critical patent/CN110189995A/zh
Publication of CN103348452A publication Critical patent/CN103348452A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

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  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
CN2011800534639A 2010-12-10 2011-12-06 用于从衬底选择性地移除氮化物的方法 Pending CN103348452A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910535292.1A CN110189995A (zh) 2010-12-10 2011-12-06 用于从衬底选择性地移除氮化物的方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US42180810P 2010-12-10 2010-12-10
US61/421,808 2010-12-10
PCT/US2011/063441 WO2012078580A1 (en) 2010-12-10 2011-12-06 Process for selectively removing nitride from substrates

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201910535292.1A Division CN110189995A (zh) 2010-12-10 2011-12-06 用于从衬底选择性地移除氮化物的方法

Publications (1)

Publication Number Publication Date
CN103348452A true CN103348452A (zh) 2013-10-09

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ID=46198261

Family Applications (2)

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CN2011800534639A Pending CN103348452A (zh) 2010-12-10 2011-12-06 用于从衬底选择性地移除氮化物的方法
CN201910535292.1A Pending CN110189995A (zh) 2010-12-10 2011-12-06 用于从衬底选择性地移除氮化物的方法

Family Applications After (1)

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CN201910535292.1A Pending CN110189995A (zh) 2010-12-10 2011-12-06 用于从衬底选择性地移除氮化物的方法

Country Status (6)

Country Link
US (1) US9059104B2 (https=)
JP (1) JP6236320B2 (https=)
KR (1) KR101837226B1 (https=)
CN (2) CN103348452A (https=)
TW (1) TWI528432B (https=)
WO (1) WO2012078580A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103021829A (zh) * 2011-09-24 2013-04-03 台湾积体电路制造股份有限公司 在单晶圆装置中蚀刻氮化硅
CN106158703A (zh) * 2015-05-14 2016-11-23 东京毅力科创株式会社 基板液处理装置以及基板液处理方法
CN111829941A (zh) * 2020-05-27 2020-10-27 盐城工学院 一种用于检测氧化镓单晶加工表面损伤层的腐蚀液及检测方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012074601A (ja) * 2010-09-29 2012-04-12 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US9257292B2 (en) * 2011-03-30 2016-02-09 Tokyo Electron Limited Etch system and method for single substrate processing
US20120248061A1 (en) * 2011-03-30 2012-10-04 Tokyo Electron Limited Increasing masking layer etch rate and selectivity
JP5854230B2 (ja) * 2012-12-13 2016-02-09 栗田工業株式会社 基板洗浄液および基板洗浄方法
US9017568B2 (en) 2013-01-22 2015-04-28 Tel Fsi, Inc. Process for increasing the hydrophilicity of silicon surfaces following HF treatment
US8871108B2 (en) * 2013-01-22 2014-10-28 Tel Fsi, Inc. Process for removing carbon material from substrates
WO2014151778A1 (en) * 2013-03-15 2014-09-25 Tel Fsi, Inc Processing system and method for providing a heated etching solution
JP2016519441A (ja) * 2013-05-08 2016-06-30 ティーイーエル エフエスアイ，インコーポレイティド ヘイズ除去および残渣除去用の水蒸気を含むプロセス
JP6225067B2 (ja) * 2013-06-21 2017-11-01 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
US10269591B2 (en) * 2013-10-23 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of selectively removing silicon nitride and single wafer etching apparatus thereof
TWI578396B (zh) * 2013-12-11 2017-04-11 斯克林集團公司 基板處理方法及基板處理裝置
TWI629720B (zh) * 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備
GB201815163D0 (en) * 2018-09-18 2018-10-31 Lam Res Ag Wafer washing method and apparatus
JP7209556B2 (ja) 2019-02-05 2023-01-20 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7779723B2 (ja) * 2021-12-17 2025-12-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
US12595413B2 (en) 2022-05-13 2026-04-07 Entegris, Inc. Silicon nitride etching compositions and method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087273A (en) * 1997-01-22 2000-07-11 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
US20040261817A1 (en) * 2003-06-27 2004-12-30 Dainippon Screen Mfg. Co., Ltd. Foreign matter removing apparatus, substrate treating apparatus, and substrate treating method
US20070087456A1 (en) * 2005-10-14 2007-04-19 Akio Hashizume Substrate processing method and substrate processing apparatus
TW200814181A (en) * 2006-09-12 2008-03-16 Toshiba Kk Etching liquid, etching method, and method of manufacturing electronic component
CN101681827A (zh) * 2007-05-18 2010-03-24 Fsi国际公司 用水蒸气或蒸汽处理基材的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW380284B (en) 1998-09-09 2000-01-21 Promos Technologies Inc Method for improving etching uniformity during a wet etching process
US6406551B1 (en) 1999-05-14 2002-06-18 Fsi International, Inc. Method for treating a substrate with heat sensitive agents
US6488272B1 (en) 2000-06-07 2002-12-03 Simplus Systems Corporation Liquid delivery system emulsifier
US6835667B2 (en) 2002-06-14 2004-12-28 Fsi International, Inc. Method for etching high-k films in solutions comprising dilute fluoride species
US7976718B2 (en) * 2003-12-30 2011-07-12 Akrion Systems Llc System and method for selective etching of silicon nitride during substrate processing
JP4439956B2 (ja) 2004-03-16 2010-03-24 ソニー株式会社 レジスト剥離方法およびレジスト剥離装置
JP4495022B2 (ja) * 2005-03-30 2010-06-30 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP4692785B2 (ja) 2005-04-01 2011-06-01 エフエスアイ インターナショナル インコーポレイテッド 一つ又はそれ以上の処理流体を用いた、半導体ウエハー又は他のマイクロエレクトロニクス用の基板に使用されるツール用の移動かつ入れ子化できる、コンパクトなダクトシステム
CN101900956A (zh) 2005-11-23 2010-12-01 Fsi国际公司 从基材上除去材料的方法
JP5181085B2 (ja) * 2006-06-22 2013-04-10 リバーベル株式会社 処理装置及び処理方法
US8387635B2 (en) 2006-07-07 2013-03-05 Tel Fsi, Inc. Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids
CN102683249B (zh) 2008-05-09 2015-06-17 泰尔Fsi公司 用于处理微电子工件的系统
US9355874B2 (en) 2011-09-24 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon nitride etching in a single wafer apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087273A (en) * 1997-01-22 2000-07-11 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
US20040261817A1 (en) * 2003-06-27 2004-12-30 Dainippon Screen Mfg. Co., Ltd. Foreign matter removing apparatus, substrate treating apparatus, and substrate treating method
US20070087456A1 (en) * 2005-10-14 2007-04-19 Akio Hashizume Substrate processing method and substrate processing apparatus
TW200814181A (en) * 2006-09-12 2008-03-16 Toshiba Kk Etching liquid, etching method, and method of manufacturing electronic component
CN101681827A (zh) * 2007-05-18 2010-03-24 Fsi国际公司 用水蒸气或蒸汽处理基材的方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103021829A (zh) * 2011-09-24 2013-04-03 台湾积体电路制造股份有限公司 在单晶圆装置中蚀刻氮化硅
CN106158703A (zh) * 2015-05-14 2016-11-23 东京毅力科创株式会社 基板液处理装置以及基板液处理方法
CN111829941A (zh) * 2020-05-27 2020-10-27 盐城工学院 一种用于检测氧化镓单晶加工表面损伤层的腐蚀液及检测方法

Also Published As

Publication number Publication date
US20120145672A1 (en) 2012-06-14
TWI528432B (zh) 2016-04-01
JP6236320B2 (ja) 2017-11-22
TW201246334A (en) 2012-11-16
US9059104B2 (en) 2015-06-16
KR20140063498A (ko) 2014-05-27
WO2012078580A1 (en) 2012-06-14
JP2013545319A (ja) 2013-12-19
CN110189995A (zh) 2019-08-30
KR101837226B1 (ko) 2018-03-09

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Application publication date: 20131009