CN103345127B - 使用极uv射线且具有包括吸气材料的挥发性有机化合物吸收构件的光刻设备 - Google Patents
使用极uv射线且具有包括吸气材料的挥发性有机化合物吸收构件的光刻设备 Download PDFInfo
- Publication number
- CN103345127B CN103345127B CN201310276167.6A CN201310276167A CN103345127B CN 103345127 B CN103345127 B CN 103345127B CN 201310276167 A CN201310276167 A CN 201310276167A CN 103345127 B CN103345127 B CN 103345127B
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- Prior art keywords
- equipment
- absorption component
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- asepwirator pump
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Links
- 239000000463 material Substances 0.000 title claims abstract description 51
- 238000005247 gettering Methods 0.000 title claims abstract description 26
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 16
- 239000012855 volatile organic compound Substances 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims 7
- 239000004215 Carbon black (E152) Substances 0.000 abstract description 3
- 229930195733 hydrocarbon Natural products 0.000 abstract description 3
- 150000002430 hydrocarbons Chemical class 0.000 abstract description 3
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- 239000013049 sediment Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 229910004688 Ti-V Inorganic materials 0.000 description 1
- 229910010968 Ti—V Inorganic materials 0.000 description 1
- 229910003126 Zr–Ni Inorganic materials 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Electron Tubes For Measurement (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000282A ITMI20080282A1 (it) | 2008-02-22 | 2008-02-22 | Apparato per litografia con radiazione nell'uv estremo con un elemento assorbitore di idrocarburi comprendente un materiale getter |
| ITMI2008A000282 | 2008-02-22 | ||
| CN200980103842.7A CN101971098B (zh) | 2008-02-22 | 2009-02-10 | 使用极uv射线且具有包括吸气材料的挥发性有机化合物吸收构件的光刻设备 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980103842.7A Division CN101971098B (zh) | 2008-02-22 | 2009-02-10 | 使用极uv射线且具有包括吸气材料的挥发性有机化合物吸收构件的光刻设备 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103345127A CN103345127A (zh) | 2013-10-09 |
| CN103345127B true CN103345127B (zh) | 2016-01-20 |
Family
ID=40291682
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310276167.6A Active CN103345127B (zh) | 2008-02-22 | 2009-02-10 | 使用极uv射线且具有包括吸气材料的挥发性有机化合物吸收构件的光刻设备 |
| CN200980103842.7A Active CN101971098B (zh) | 2008-02-22 | 2009-02-10 | 使用极uv射线且具有包括吸气材料的挥发性有机化合物吸收构件的光刻设备 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980103842.7A Active CN101971098B (zh) | 2008-02-22 | 2009-02-10 | 使用极uv射线且具有包括吸气材料的挥发性有机化合物吸收构件的光刻设备 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US8399861B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2255252B1 (cg-RX-API-DMAC7.html) |
| JP (2) | JP5411167B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101429440B1 (cg-RX-API-DMAC7.html) |
| CN (2) | CN103345127B (cg-RX-API-DMAC7.html) |
| AT (1) | ATE514973T1 (cg-RX-API-DMAC7.html) |
| CA (1) | CA2711616A1 (cg-RX-API-DMAC7.html) |
| IT (1) | ITMI20080282A1 (cg-RX-API-DMAC7.html) |
| TW (1) | TW200951628A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2009103631A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0696395B2 (ja) | 1991-04-30 | 1994-11-30 | 工業技術院長 | 形状可変型多輪全方向移動ビークル |
| JP5315100B2 (ja) * | 2009-03-18 | 2013-10-16 | 株式会社ニューフレアテクノロジー | 描画装置 |
| ITMI20121732A1 (it) | 2012-10-15 | 2014-04-16 | Getters Spa | Pompa getter |
| TWI660125B (zh) * | 2014-04-03 | 2019-05-21 | 義大利商沙斯格特斯公司 | 吸氣泵 |
| DE102016213830B3 (de) * | 2016-07-27 | 2017-12-07 | Carl Zeiss Smt Gmbh | Quell-Hohlkörper sowie EUV-Plasma-Lichtquelle mit einem derartigen Quell-Hohlkörper |
| KR20220076913A (ko) | 2020-12-01 | 2022-06-08 | 포항공과대학교 산학협력단 | 나노 리소그래피 장치 |
| CN113042160A (zh) * | 2021-03-10 | 2021-06-29 | 南京华东电子真空材料有限公司 | 一种应用于极紫外设备的吸气剂及制备装置 |
| DE102021205985A1 (de) * | 2021-06-11 | 2022-12-15 | Carl Zeiss Smt Gmbh | Optische Anordnung für die EUV-Lithographie und Verfahren zum Regenerieren eines gasbindenden Bauteils |
| DE102022102478A1 (de) * | 2022-02-02 | 2023-08-03 | Asml Netherlands B.V. | EUV-Lithographiesystem mit einem gasbindenden Bauteil |
| DE102023200375A1 (de) * | 2023-01-18 | 2024-07-18 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zur Kontaminationsreduzierung in einem optischen System für die Mikrolithographie |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1174593A (zh) * | 1994-12-02 | 1998-02-25 | 萨伊斯纯汽油有限公司 | 吸气泵组件及系统 |
| CN1215799A (zh) * | 1997-10-15 | 1999-05-05 | 工程吸气公司 | 高气体吸附速度的吸气泵 |
| CN1989458A (zh) * | 2004-07-22 | 2007-06-27 | 皇家飞利浦电子股份有限公司 | 具有清洁装置的光学系统 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4969556A (en) * | 1988-05-10 | 1990-11-13 | Hajime Ishimaru | Vacuum container |
| US5911560A (en) * | 1994-10-31 | 1999-06-15 | Saes Pure Gas, Inc. | Getter pump module and system |
| IT237018Y1 (it) * | 1995-07-10 | 2000-08-31 | Getters Spa | Pompa getter perfezionata in particolare per uno strumento dianalisi chimiche portatile |
| US6391090B1 (en) | 2001-04-02 | 2002-05-21 | Aeronex, Inc. | Method for purification of lens gases used in photolithography |
| JP2004053264A (ja) | 2002-07-16 | 2004-02-19 | Konica Minolta Holdings Inc | 放射線像変換パネルおよび製造方法 |
| JP2004214480A (ja) * | 2003-01-07 | 2004-07-29 | Nikon Corp | 露光装置 |
| JP4613167B2 (ja) | 2003-05-22 | 2011-01-12 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 少なくとも一つの光学要素を洗浄する方法および装置 |
| KR100694572B1 (ko) * | 2003-11-11 | 2007-03-13 | 에이에스엠엘 네델란즈 비.브이. | 오염 억제를 위한 리소그래피 장치, 디바이스 제조방법 및 이에 의해 제조된 디바이스 |
| JP2005244016A (ja) * | 2004-02-27 | 2005-09-08 | Nikon Corp | 露光装置、露光方法、及び微細パターンを有するデバイスの製造方法 |
| US7868304B2 (en) * | 2005-02-07 | 2011-01-11 | Asml Netherlands B.V. | Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| JP2006245254A (ja) * | 2005-03-03 | 2006-09-14 | Nikon Corp | 露光装置、露光方法、および微細パターンを有するデバイスの製造方法 |
| JP2007018931A (ja) | 2005-07-08 | 2007-01-25 | Canon Inc | 光源装置、露光装置及びデバイス製造方法 |
| US7473908B2 (en) * | 2006-07-14 | 2009-01-06 | Asml Netherlands B.V. | Getter and cleaning arrangement for a lithographic apparatus and method for cleaning a surface |
| DE102006036488A1 (de) * | 2006-08-04 | 2008-02-07 | Carl Zeiss Smt Ag | Optisches System, insbesondere Projektionsobjektiv in der Mikrolithographie |
| US20080050680A1 (en) * | 2006-08-24 | 2008-02-28 | Stefan Brandl | Lithography systems and methods |
| US7959310B2 (en) * | 2006-09-13 | 2011-06-14 | Carl Zeiss Smt Gmbh | Optical arrangement and EUV lithography device with at least one heated optical element, operating methods, and methods for cleaning as well as for providing an optical element |
| DE102006044591A1 (de) | 2006-09-19 | 2008-04-03 | Carl Zeiss Smt Ag | Optische Anordnung, insbesondere Projektionsbelichtungsanlage für die EUV-Lithographie, sowie reflektives optisches Element mit verminderter Kontamination |
| US7671348B2 (en) * | 2007-06-26 | 2010-03-02 | Advanced Micro Devices, Inc. | Hydrocarbon getter for lithographic exposure tools |
-
2008
- 2008-02-22 IT IT000282A patent/ITMI20080282A1/it unknown
-
2009
- 2009-02-10 CN CN201310276167.6A patent/CN103345127B/zh active Active
- 2009-02-10 JP JP2010547146A patent/JP5411167B2/ja active Active
- 2009-02-10 US US12/812,948 patent/US8399861B2/en active Active
- 2009-02-10 KR KR1020107020658A patent/KR101429440B1/ko active Active
- 2009-02-10 AT AT09711636T patent/ATE514973T1/de not_active IP Right Cessation
- 2009-02-10 WO PCT/EP2009/051516 patent/WO2009103631A1/en not_active Ceased
- 2009-02-10 CA CA2711616A patent/CA2711616A1/en not_active Abandoned
- 2009-02-10 EP EP09711636A patent/EP2255252B1/en active Active
- 2009-02-10 CN CN200980103842.7A patent/CN101971098B/zh active Active
- 2009-02-16 TW TW098104833A patent/TW200951628A/zh unknown
-
2013
- 2013-05-13 JP JP2013100962A patent/JP5357356B2/ja active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1174593A (zh) * | 1994-12-02 | 1998-02-25 | 萨伊斯纯汽油有限公司 | 吸气泵组件及系统 |
| CN1215799A (zh) * | 1997-10-15 | 1999-05-05 | 工程吸气公司 | 高气体吸附速度的吸气泵 |
| CN1989458A (zh) * | 2004-07-22 | 2007-06-27 | 皇家飞利浦电子股份有限公司 | 具有清洁装置的光学系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101971098A (zh) | 2011-02-09 |
| CN101971098B (zh) | 2013-07-10 |
| ATE514973T1 (de) | 2011-07-15 |
| US20100309446A1 (en) | 2010-12-09 |
| WO2009103631A1 (en) | 2009-08-27 |
| JP5411167B2 (ja) | 2014-02-12 |
| CA2711616A1 (en) | 2009-08-27 |
| TW200951628A (en) | 2009-12-16 |
| CN103345127A (zh) | 2013-10-09 |
| JP2013165293A (ja) | 2013-08-22 |
| JP2011512684A (ja) | 2011-04-21 |
| KR20100119568A (ko) | 2010-11-09 |
| US8399861B2 (en) | 2013-03-19 |
| KR101429440B1 (ko) | 2014-08-12 |
| JP5357356B2 (ja) | 2013-12-04 |
| EP2255252B1 (en) | 2011-06-29 |
| EP2255252A1 (en) | 2010-12-01 |
| ITMI20080282A1 (it) | 2009-08-23 |
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| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |