JP2011512684A - 極紫外線放射を使用すると共にゲッター材料を含む揮発性有機化合物吸収部材を有するリソグラフィー装置 - Google Patents
極紫外線放射を使用すると共にゲッター材料を含む揮発性有機化合物吸収部材を有するリソグラフィー装置 Download PDFInfo
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- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
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- 230000007704 transition Effects 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
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- 238000004544 sputter deposition Methods 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
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- 238000005516 engineering process Methods 0.000 description 3
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- 230000003287 optical effect Effects 0.000 description 3
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- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
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- 229910004688 Ti-V Inorganic materials 0.000 description 1
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- 229910003126 Zr–Ni Inorganic materials 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Abstract
Description
装置10は、
EUV放射源110と、
全ての方向について放射源から放射される放射の部分を収集して、放射を後のチャンバーに方向づける、集光器111と
を有する第1のチャンバー11と、
放射源から放射された周波数帯から所望の波長を選択すると共に、後のチャンバーへ単色放射を方向づける単色光分光器120
を含む第2のチャンバー12と、
半導体材料で作られた支持体上に配置された高分子フィルムの上に再現されるデザインを有するマスク131を保持するサンプルホルダー130と、
少なくとも1つの反射要素132(しかし、一般的に複数の反射要素が設けられる。例えば、特許文献1の図2参照。)と、
電動部材134により移動される“X−Y”テーブル133と
を含む処理チャンバー13と、
を具備する。
テーブル133上に、半導体材料で作られる支持体135が配置され、支持体135上に、放射によって影響を被る高分子フィルム136が存在し、図1の文字Rは、EUV放射の経路を示す。
Claims (13)
- 極紫外線放射を使用するリソグラフィー装置(10)において、
処理チャンバー(13)内に、又は適切な開口部により処理チャンバー(13)に接続される適切な空間内に配置される、ゲッター材料を含む揮発性有機化合物(VOCs)吸収部材(22;31;41)を有する
ことを特徴とするリソグラフィー装置(10)。 - 前記VOCs吸収部材は、ゲッターポンプ支持体(23)を具備するゲッターポンプ(22)であり、
前記ゲッターポンプは、処理チャンバーの壁(20)に形成される開口部(21)を通して処理チャンバー(13)に挿入されると共に、前記ゲッターポンプ支持体(23)を支持するフランジ(25)により前記壁に接続される、
請求項1に記載の装置。 - 前記VOCs吸収部材は、処理チャンバーの外部であるが、前記開口部を介して処理チャンバーと連通する側方チャンバー内に配置されるゲッターポンプである、
請求項1に記載の装置。 - 前記VOCs吸収部材は、ゲッター材料で作られる複数のディスク(24)から構成されると共に中央ゲッターポンプ支持体(23)に固定されるゲッターポンプ(22)である、
請求項1に記載の装置。 - 前記VOCs吸収部材は、ゲッター材料で作られる複数のディスク(24)と、加熱要素とを具備するゲッターポンプ(22)であり、
前記ゲッターディスクは、前記加熱要素に固定される、
請求項1に記載の装置。 - 前記VOCs吸収部材は、ゲッター材料で作られる複数のディスクと、加熱要素とを具備するゲッターポンプであり、
前記ゲッターディスクは、前記加熱要素に固定されることなく、前記加熱要素の周辺に配置される、
請求項1に記載の装置。 - 前記VOCs吸収部材は、処理チャンバー内において、紫外線放射と同軸に、かつ、支持体の支持部材の近傍に配置される、中空コンテナーの形状を有するゲッターポンプ(31)であり、支持体の上に、放射により影響を被る高分子フィルムが存在する、
請求項1に記載の装置。 - 前記中空コンテナーが円筒形である、
請求項7に記載の装置。 - 前記ゲッターポンプは、ゲッター材料で作られ孔が空けられた複数のディスク(33)が内部に存在する、円筒形のフレーム(32)を具備する、
請求項8に記載の装置。 - 前記ゲッターポンプは、ゲッター材料で作られ放射状に配置される複数かつ平坦な部材が内部に存在する、円筒形のフレームを具備する、
請求項8に記載の装置。 - 前記VOCs吸収部材は、金属の表面上のゲッター材料の積層体である、
請求項1に記載の装置。 - 前記VOCs吸収部材(41)は、紫外線放射と同軸に、かつ、支持体の支持部材の近傍に配置される中空体(43)の内壁にゲッター材料の積層体(42)から構成され、支持体の上に、放射により影響を被る高分子フィルムが存在する、
請求項11に記載の装置。 - ゲッター材料は、チタニウム、ジルコニウム、バナジウム、ニオビウム若しくはハフニウム、又は、遷移元素と、希土類元素と、アルミニウムとの中から選択される少なくとももう1つの元素を含むチタニウム及びジルコニウムの両方若しくは一方を基にした合金の中から選択される、
請求項1に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI2008A000282 | 2008-02-22 | ||
IT000282A ITMI20080282A1 (it) | 2008-02-22 | 2008-02-22 | Apparato per litografia con radiazione nell'uv estremo con un elemento assorbitore di idrocarburi comprendente un materiale getter |
PCT/EP2009/051516 WO2009103631A1 (en) | 2008-02-22 | 2009-02-10 | Lithography apparatus using extreme uv radiation and having a volatile organic compounds sorbing member comprising a getter material |
Related Child Applications (1)
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JP2013100962A Division JP5357356B2 (ja) | 2008-02-22 | 2013-05-13 | 極紫外線放射を使用すると共にゲッター材料を含む揮発性有機化合物吸収部材を有するリソグラフィー装置 |
Publications (3)
Publication Number | Publication Date |
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JP2011512684A true JP2011512684A (ja) | 2011-04-21 |
JP2011512684A5 JP2011512684A5 (ja) | 2012-01-19 |
JP5411167B2 JP5411167B2 (ja) | 2014-02-12 |
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Family Applications (2)
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JP2010547146A Active JP5411167B2 (ja) | 2008-02-22 | 2009-02-10 | 極紫外線放射を使用すると共にゲッター材料を含む揮発性有機化合物吸収部材を有するリソグラフィー装置 |
JP2013100962A Active JP5357356B2 (ja) | 2008-02-22 | 2013-05-13 | 極紫外線放射を使用すると共にゲッター材料を含む揮発性有機化合物吸収部材を有するリソグラフィー装置 |
Family Applications After (1)
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JP2013100962A Active JP5357356B2 (ja) | 2008-02-22 | 2013-05-13 | 極紫外線放射を使用すると共にゲッター材料を含む揮発性有機化合物吸収部材を有するリソグラフィー装置 |
Country Status (10)
Country | Link |
---|---|
US (1) | US8399861B2 (ja) |
EP (1) | EP2255252B1 (ja) |
JP (2) | JP5411167B2 (ja) |
KR (1) | KR101429440B1 (ja) |
CN (2) | CN101971098B (ja) |
AT (1) | ATE514973T1 (ja) |
CA (1) | CA2711616A1 (ja) |
IT (1) | ITMI20080282A1 (ja) |
TW (1) | TW200951628A (ja) |
WO (1) | WO2009103631A1 (ja) |
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JP5315100B2 (ja) * | 2009-03-18 | 2013-10-16 | 株式会社ニューフレアテクノロジー | 描画装置 |
ITMI20121732A1 (it) | 2012-10-15 | 2014-04-16 | Getters Spa | Pompa getter |
TWI660125B (zh) * | 2014-04-03 | 2019-05-21 | 義大利商沙斯格特斯公司 | 吸氣泵 |
DE102016213830B3 (de) * | 2016-07-27 | 2017-12-07 | Carl Zeiss Smt Gmbh | Quell-Hohlkörper sowie EUV-Plasma-Lichtquelle mit einem derartigen Quell-Hohlkörper |
KR20220076913A (ko) | 2020-12-01 | 2022-06-08 | 포항공과대학교 산학협력단 | 나노 리소그래피 장치 |
CN113042160A (zh) * | 2021-03-10 | 2021-06-29 | 南京华东电子真空材料有限公司 | 一种应用于极紫外设备的吸气剂及制备装置 |
DE102021205985A1 (de) * | 2021-06-11 | 2022-12-15 | Carl Zeiss Smt Gmbh | Optische Anordnung für die EUV-Lithographie und Verfahren zum Regenerieren eines gasbindenden Bauteils |
DE102022102478A1 (de) * | 2022-02-02 | 2023-08-03 | Asml Netherlands B.V. | EUV-Lithographiesystem mit einem gasbindenden Bauteil |
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2008
- 2008-02-22 IT IT000282A patent/ITMI20080282A1/it unknown
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2009
- 2009-02-10 CA CA2711616A patent/CA2711616A1/en not_active Abandoned
- 2009-02-10 KR KR1020107020658A patent/KR101429440B1/ko active IP Right Grant
- 2009-02-10 US US12/812,948 patent/US8399861B2/en active Active
- 2009-02-10 EP EP09711636A patent/EP2255252B1/en active Active
- 2009-02-10 CN CN200980103842.7A patent/CN101971098B/zh active Active
- 2009-02-10 CN CN201310276167.6A patent/CN103345127B/zh active Active
- 2009-02-10 JP JP2010547146A patent/JP5411167B2/ja active Active
- 2009-02-10 WO PCT/EP2009/051516 patent/WO2009103631A1/en active Application Filing
- 2009-02-10 AT AT09711636T patent/ATE514973T1/de not_active IP Right Cessation
- 2009-02-16 TW TW098104833A patent/TW200951628A/zh unknown
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- 2013-05-13 JP JP2013100962A patent/JP5357356B2/ja active Active
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JP2004214480A (ja) * | 2003-01-07 | 2004-07-29 | Nikon Corp | 露光装置 |
JP2005244016A (ja) * | 2004-02-27 | 2005-09-08 | Nikon Corp | 露光装置、露光方法、及び微細パターンを有するデバイスの製造方法 |
JP2006245254A (ja) * | 2005-03-03 | 2006-09-14 | Nikon Corp | 露光装置、露光方法、および微細パターンを有するデバイスの製造方法 |
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CN103345127A (zh) | 2013-10-09 |
EP2255252B1 (en) | 2011-06-29 |
JP5411167B2 (ja) | 2014-02-12 |
JP5357356B2 (ja) | 2013-12-04 |
US8399861B2 (en) | 2013-03-19 |
ITMI20080282A1 (it) | 2009-08-23 |
JP2013165293A (ja) | 2013-08-22 |
US20100309446A1 (en) | 2010-12-09 |
CN103345127B (zh) | 2016-01-20 |
EP2255252A1 (en) | 2010-12-01 |
KR101429440B1 (ko) | 2014-08-12 |
WO2009103631A1 (en) | 2009-08-27 |
KR20100119568A (ko) | 2010-11-09 |
CN101971098A (zh) | 2011-02-09 |
TW200951628A (en) | 2009-12-16 |
ATE514973T1 (de) | 2011-07-15 |
CA2711616A1 (en) | 2009-08-27 |
CN101971098B (zh) | 2013-07-10 |
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