CN103325759B - 半导体模块 - Google Patents

半导体模块 Download PDF

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Publication number
CN103325759B
CN103325759B CN201310265179.9A CN201310265179A CN103325759B CN 103325759 B CN103325759 B CN 103325759B CN 201310265179 A CN201310265179 A CN 201310265179A CN 103325759 B CN103325759 B CN 103325759B
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CN
China
Prior art keywords
diodes
diode
semiconductor module
switching elements
switching element
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Active
Application number
CN201310265179.9A
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English (en)
Chinese (zh)
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CN103325759A (zh
Inventor
加藤正博
中川信也
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN103325759A publication Critical patent/CN103325759A/zh
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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
    • H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
    • H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49537—Plurality of lead frames mounted in one device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/165—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
    • H02M1/4208—Arrangements for improving power factor of AC input
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Rectifiers (AREA)
CN201310265179.9A 2011-02-14 2011-12-30 半导体模块 Active CN103325759B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011-028184 2011-02-14
JP2011028184A JP5484372B2 (ja) 2011-02-14 2011-02-14 半導体モジュール
CN201110453505XA CN102637679A (zh) 2011-02-14 2011-12-30 半导体模块

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201110453505XA Division CN102637679A (zh) 2011-02-14 2011-12-30 半导体模块

Publications (2)

Publication Number Publication Date
CN103325759A CN103325759A (zh) 2013-09-25
CN103325759B true CN103325759B (zh) 2016-04-13

Family

ID=46622021

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201310265179.9A Active CN103325759B (zh) 2011-02-14 2011-12-30 半导体模块
CN201110453505XA Pending CN102637679A (zh) 2011-02-14 2011-12-30 半导体模块

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201110453505XA Pending CN102637679A (zh) 2011-02-14 2011-12-30 半导体模块

Country Status (3)

Country Link
US (1) US8643026B2 (enExample)
JP (1) JP5484372B2 (enExample)
CN (2) CN103325759B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5875402B2 (ja) * 2012-02-17 2016-03-02 三菱電機株式会社 パワーモジュール及び空調装置
JP2014086536A (ja) * 2012-10-23 2014-05-12 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
JP6094420B2 (ja) * 2013-08-09 2017-03-15 三菱電機株式会社 半導体装置
US10629521B2 (en) * 2014-04-08 2020-04-21 Mitsubishi Electric Corporation Molded module
DE112014006660B4 (de) * 2014-05-12 2019-10-31 Mitsubishi Electric Corporation Leistungshalbleiteranordnung und Verfahren zum Herstellen derselben
JP6537246B2 (ja) * 2014-10-16 2019-07-03 京セラ株式会社 パワーモジュール及びパワーユニット
US11411120B2 (en) 2017-09-05 2022-08-09 Ulvac, Inc. Method for manufacturing semiconductor device using plasma CVD process
JP7109347B2 (ja) * 2018-12-03 2022-07-29 三菱電機株式会社 半導体装置および電力変換装置
WO2024103986A1 (zh) * 2022-11-17 2024-05-23 海信家电集团股份有限公司 功率模块和设备
EP4614557A1 (en) * 2022-11-17 2025-09-10 Hisense Home Appliances Group Co., Ltd. Power module and device

Citations (3)

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JP2005159024A (ja) * 2003-11-26 2005-06-16 Toyota Motor Corp 半導体モジュール、半導体装置および負荷駆動装置
CN102017140A (zh) * 2008-05-08 2011-04-13 丰田自动车株式会社 半导体装置
CN102208398A (zh) * 2006-08-31 2011-10-05 大金工业株式会社 电力转换装置

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SE9502249D0 (sv) 1995-06-21 1995-06-21 Abb Research Ltd Converter circuitry having at least one switching device and circuit module
JP3201277B2 (ja) 1996-09-11 2001-08-20 株式会社日立製作所 半導体装置
JPH11233712A (ja) 1998-02-12 1999-08-27 Hitachi Ltd 半導体装置及びその製法とそれを使った電気機器
JP4073559B2 (ja) * 1998-10-30 2008-04-09 三菱電機株式会社 半導体装置
JP4450530B2 (ja) 2001-07-03 2010-04-14 三菱電機株式会社 インバータモジュール
JP3676737B2 (ja) * 2002-01-23 2005-07-27 三菱電機株式会社 モータ駆動装置及び送風機及び圧縮機及び冷凍空調装置
JP4262453B2 (ja) * 2002-07-15 2009-05-13 三菱電機株式会社 電力半導体装置
US7355368B2 (en) * 2004-08-12 2008-04-08 International Rectifier Corporation Efficient in-rush current limiting circuit with dual gated bidirectional hemts
US8076699B2 (en) * 2008-04-02 2011-12-13 The Hong Kong Univ. Of Science And Technology Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
KR101740684B1 (ko) * 2009-10-30 2017-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 파워 다이오드, 정류기 및 그것을 가지는 반도체 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005159024A (ja) * 2003-11-26 2005-06-16 Toyota Motor Corp 半導体モジュール、半導体装置および負荷駆動装置
CN102208398A (zh) * 2006-08-31 2011-10-05 大金工业株式会社 电力转换装置
CN102017140A (zh) * 2008-05-08 2011-04-13 丰田自动车株式会社 半导体装置

Also Published As

Publication number Publication date
JP2012169397A (ja) 2012-09-06
JP5484372B2 (ja) 2014-05-07
US20120206196A1 (en) 2012-08-16
CN102637679A (zh) 2012-08-15
CN103325759A (zh) 2013-09-25
US8643026B2 (en) 2014-02-04

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