CN103296019A - 半导体装置以及用于制造半导体装置的方法 - Google Patents

半导体装置以及用于制造半导体装置的方法 Download PDF

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CN103296019A
CN103296019A CN2013100601189A CN201310060118A CN103296019A CN 103296019 A CN103296019 A CN 103296019A CN 2013100601189 A CN2013100601189 A CN 2013100601189A CN 201310060118 A CN201310060118 A CN 201310060118A CN 103296019 A CN103296019 A CN 103296019A
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coverboard
cooling device
insulated substrate
resin portion
semiconductor element
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CN2013100601189A
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西槙介
森昌吾
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Toyota Industries Corp
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Toyoda Automatic Loom Works Ltd
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Publication of CN103296019A publication Critical patent/CN103296019A/zh
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Abstract

一种半导体装置，其包括：冷却装置、绝缘基板、半导体元件、外部连接端子以及树脂部。绝缘基板钎焊至冷却装置的外表面。半导体元件钎焊至绝缘基板。外部连接端子包括电连接至半导体元件的第一端部以及相反的第二端部。树脂部模制到绝缘基板、半导体元件、外部连接端子的第一端部以及至少一部分冷却装置上。

Description

半导体装置以及用于制造半导体装置的方法
技术领域
本发明涉及半导体装置以及用于制造半导体装置的方法。
背景技术
日本公开特许公报No.2008-263210公开了一种设置有第一引线的电力半导体装置，该第一引线包括第一下垫板（die pad）、设置在第一下垫板的上表面上的电源芯片以及应用于第一下垫板的下表面的绝缘座。该电力半导体装置还设置有第二引线，该第二引线包括第二下垫板、设置在第二下垫板上的控制芯片、连接电源芯片和控制芯片的金为主要成分的导线以及模制树脂部。控制芯片和电源芯片嵌入树脂部中，使得第一引线的端部和第二引线的端部从树脂部伸出。绝缘座具有比树脂部高的热传导率。
参照图9，功率半导体元件可以安装在基板上并且树脂部可以模制在基板上以形成半导体模块100。这提高了功率循环期间元件的可靠性。为了通过将半导体模块100固定到散热构件101（散热装置等）来冷却产生热量的功率半导体元件，需要将例如施加迫压力F的支架102固定到散热构件101。在这种情况下，在散热构件101与半导体模块100之间形成的间隙中（例如，由于基板弯曲而形成的间隙）填充有硅脂103。硅脂103具有低热传导率因而阻碍冷却。此外，使用支架102来固定半导体模块100使整个装置增大。
发明内容
本发明的目的是提供半导体装置以及用于制造半导体装置的方法，它们提高了通过模制树脂部结合的元件部分的可靠性、实现高的冷却能力并且使得尺寸能够减小。
为了实现上述目的，本发明的一个方面是一种半导体装置，其设置有包括冷却剂通道的冷却装置。绝缘基板硬钎焊至冷却装置的外表面。半导体元件软钎焊至绝缘基板。外部连接端子包括电连接至半导体元件的第一端部以及相反的第二端部。树脂部模制到绝缘基板、半导体元件、外部连接端子的第一端部以及至少一部分冷却装置上。
本发明的另一方面是一种制造半导体装置的方法。该方法包括通过连结第一壳板和第二壳板而形成冷却装置。第一壳板包括周缘部并且第二壳板也包括周缘部，第二壳板的周缘部与第一壳板的周缘部被硬钎焊在一起。该方法还包括将第一壳板和绝缘基板硬钎焊在一起以连结第一壳板和绝缘基板；将半导体元件安装在绝缘基板上；将半导体元件与外部连接端子的第一端部软钎焊在一起以连结半导体元件和外部连接端子；以及将树脂部模制在绝缘基板、半导体元件、外部连接端子的第一端部以及至少一部分第一壳板上。
根据结合附图、通过示例来说明本发明的原理的以下描述，本发明的其他方面和优点将变得清楚。
附图说明
参照以下对目前优选实施方式的描述以及附图，可以最佳地理解本发明以及本发明的目的和优点，在附图中：
图1A为根据本发明的一个实施方式的逆变器模块的正视图；
图1B为图1A中示出的逆变器模块的俯视图；
图2A为图1A中示出的逆变器模块在树脂部被去除的状态下的正视图；
图2B为图1A中示出的逆变器模块在树脂部被去除的状态下的俯视图；
图3为图1A中示出的逆变器模块的电路图；
图4A为示出了图1A的冷却装置的绝缘基板的正视图；
图4B为示出了图1A的冷却装置的绝缘基板的俯视图；
图5为沿图4B中的V-V截取的截面图；
图6A为示出了逆变器模块的制造过程的正视图；
图6B为示出了图6A的逆变器模块的俯视图；
图7为示出了逆变器模块的改型的正视图；
图8为示出了逆变器模块的改型的正视图；以及
图9为示出了将散热构件固定至模块的结构的截面图。
具体实施方式
现在将参照附图对根据本发明的一个实施方式的车辆逆变器进行描述。
参照图1A和图1B，逆变器模块10包括冷却装置。逆变器模块10是树脂模制的并且包括其上安装有半导体元件（芯片）的基板。如图1A至图2B所示，逆变器模块10包括：水冷式冷却装置20；四个绝缘基板31、32、33、34；六个晶体管（芯片）Q1、Q2、Q3、Q4、Q5、Q6；六个二极管（芯片）D1、D2、D3、D4、D5、D6以及模制树脂部40。树脂部40可以由例如环氧树脂形成。
图3示出了逆变器模块10的电路结构。逆变器模块10包括逆变器50，该逆变器50将从外部设备供给的直流电转换为交流电。然后，逆变器50将交流电供给至走行电动机60。这样驱动电动机60产生旋转。
详细地，逆变器50包括多个臂，即，在电源线与接地线之间并联设置的U相臂、V相臂以及W相臂。所述臂分别包括两个串联连接的晶体管（IGBT）Q1和Q2、Q3和Q4、以及Q5和Q6。二极管D1、D2、D3、D4、D5和D6分别设置在晶体管Q1、Q2、Q3、Q4、Q5和Q6的集电极与发射极之间。每个二极管均允许电流从相应的晶体管的发射极流动到集电极。
如图1A至图2B所示，绝缘基板31、32、33、34由直接硬钎焊铝（DBA）基板形成。每个DBA基板均包括陶瓷基板35、形成在陶瓷基板35的第一表面上的铝层36以及形成在陶瓷基板35的第二表面上的铝层37。在陶瓷基板35的第一表面上使铝层36形成图案。以同样的方式，在陶瓷基板35的第二表面上使铝层37形成图案。
冷却装置20呈具有低型面的四方盒的形状并且由铝形成。如图5所示，冷却装置20包括用作第一壳板的上板24、用作第二壳板的下板25以及波状的内部散热片26。上板24的周缘部和下板25的周缘部接箍（swage）在一起。在该状态下，将上板24的周缘部和下板25的周缘部硬钎焊至彼此。这样在冷却装置20中在上板24和下板25的周缘部处对上板24和下板25进行硬钎焊。冷却剂通道P1形成在上板24与下板25之间。内部散热片26也硬钎焊至上板24和下板25并且位于上板24和下板25之间。
以这种方式，冷却装置20包括冷却剂通道P1（参照图5）。冷却剂通过管道（未图示）供给至冷却装置20并且通过管道（未图示）从冷却装置20排出。
四个绝缘基底31、32、33和34硬钎焊至冷却装置20的上表面（外表面）。详细地，四个绝缘基板31、32、33和34中的每个绝缘基板中的在陶瓷基板35下方的铝层36均与冷却装置20的上表面硬钎焊和连结在一起。
绝缘基板31中的陶瓷基板35上的铝层37是布线材料。晶体管（芯片）Q1和二极管（芯片）D1与该铝层37的上表面软钎焊并连结在一起。绝缘基板32中的陶瓷基板35上的铝层37是布线材料。晶体管（芯片）Q3和二极管（芯片）D3与该铝层37的上表面软钎焊并连结在一起。绝缘基板33中的陶瓷基板35上的铝层37是布线材料。晶体管（芯片）Q5和二极管（芯片）D5与该铝层37的上表面软钎焊并连结在一起。绝缘基板34中的陶瓷基板35上的铝层37是布线材料。晶体管（芯片）Q2、Q4和Q6以及二极管（芯片）D2、D4和D6与该铝层37的上表面软钎焊并连结在一起。
晶体管Q1、Q3和Q5的上表面上的集电极端子以及二极管D1、D3和D5的上表面上的阴极端子通过软焊料71与用作外部连接端子的导电板70连结。晶体管Q2的上表面上的集电极端子、二极管D2的上表面上的阴极端子以及绝缘基板31中的铝层37（晶体管Q1的发射极和二极管D1的阳极）通过软焊料73与用作外部连接端子的导电板72连结。此外，晶体管Q4的上表面上的集电极端子、二极管D4的上表面上的阴极端子以及绝缘基板32中的铝层37（即，晶体管Q3的发射极和二极管D3的阳极）通过软焊料75与用作外部连接端子的导电板74连结。晶体管Q6的上表面上的集电极端子、二极管D6的上表面上的阴极端子以及绝缘基板33中的铝层37（即，晶体管Q5的发射极和二极管D5的阳极）通过软焊料77与用作外部连接端子的导电板76连结。用作外部连接端子的导电板78软钎焊至绝缘基板34中的陶瓷基板35上的铝层37。导电板70、72、74、76和78是由铜制成的。导电板70、72、74、76和78各自包括第一端部和第二端部。导电板70、72、74、76和78的第一端部电连接至相应的晶体管Q1、Q2、Q3、Q4、Q5和Q6以及相应的二极管D1、D2、D3、D4、D5和D6。
导电板70的第二端部向上弯曲。以同样的方式，导电板72的第二端部向上弯曲。导电板74的第二端部向上弯曲。导电板76的第二端部向上弯曲。导电板78的第二端部向上弯曲。
六个连接销座80、81、82、83、84和85固定至冷却装置20的上表面。连接销座80、81、82、83、84和85中的每个连接销座上固定有用作外部连接端子的三个连接销86。连接销86由铜制成。三个连接销86中的一个连接销形成栅极电压应用线，并且两个剩余的连接销86形成发射极电压检测线和发射极温度检测线。三个连接销86包括第一端子，所述第一端子通过由布线材料形成的线W电连接或丝焊（wire-bond）至晶体管（芯片）Q1、Q2、Q3、Q4、Q5、和Q6。
三个连接销86包括电连接至相应的晶体管Q1、Q2、Q3、Q4、Q5、Q6的第一端子以及向上弯曲的第二端子。
树脂部40覆盖设置在冷却装置20的上表面上的部件（即，绝缘基板31、32、33和34；晶体管Q1、Q2、Q3、Q4、Q5和Q6；二极管D1、D2、D3、D4、D5和D6；导电板70、72、74、76和78；连接销86以及线W）。导电板70、72、74、76和78包括具有从树脂部40露出的上端部的直立部分70a、72a、74a、76a、78a。以同样的方式，连接至晶体管Q1、Q2、Q3、Q4、Q5、Q6中的每个晶体管的三个连接销86包括具有从树脂部40露出的上端部的直立部分86a。树脂模制到在冷却装置20中处于上板24和下板25的周缘部处的硬钎焊部B上（参照图5）。
冷却装置20包括露出的下表面。在冷却装置20的下表面上设置有电子部件PD1（参照图1A）。电子部件PD1产生热，该热传递至冷却装置20。以这种方式，从冷却装置20的下表面露出的金属（铝）允许冷却作为发热体的电子部件PD1。
现在将对逆变器模块10的操作进行描述。
冷却剂流动通过冷却装置20。逆变器模块10的六个晶体管Q1、Q2、Q3、Q4、Q5和Q6各自在执行转换操作时产生热量。六个二极管D1、D2、D3、D4、D5和D6在导通时产生热量。晶体管Q1、Q2、Q3、Q4、Q5和Q6产生的热量通过绝缘基板31、32、33和34（DBA基板）传递至冷却装置20，冷却装置20将热量传递至流动通过冷却装置20的冷却剂。以相同的方式，由六个二极管D1、D2、D3、D4、D5和D6产生的热量通过绝缘基板31、32、33和34（DBA基板）传递至冷却装置20，冷却装置20将热量传递至流动通过冷却装置20的冷却剂。
现在将参照图1A至图2B以及图4A至图6B对制造逆变器模块10的方法进行描述。
参照图4A至图5，制备出绝缘基板31、32、33和34（DBA基板）。在陶瓷基板35的一个表面上给铝层36形成图案，并且在陶瓷基板35的另一表面上给铝层37形成图案。形成冷却装置20的上板24和下板25的周缘部接箍并硬钎焊在一起。此外，将波状的内部散热片26也硬钎焊在上板24与下板25之间。同时，将绝缘基板31、32、33和34（DBA基板）硬钎焊至冷却装置20的上表面。详细地，将四个绝缘基板31、32、33和34中的每个绝缘基板中的陶瓷基板35下面的铝层36硬钎焊至冷却装置20的上表面。硬钎焊在约600℃下进行。
随后，参照图6A和图6B，将每个晶体管Q1、Q2、Q3、Q4、Q5和Q6以及每个二极管D1、D2、D3、D4、D5、D6软钎焊至相应的一个绝缘基板31、32、33和34中的陶瓷基板35上的铝层37的上表面。
同时，将导电板70、72、74、76和78软钎焊至晶体管Q1、Q2、Q3、Q4、Q5和Q6以及二极管D1、D2、D3、D4、D5和D6。此外，其上固定有连接销86的连接销座80、81、82、83、84和85固定至冷却装置20的上表面。
此外，通过线W将连接销86与相应的晶体管（芯片）Q1、Q2、Q3、Q4、Q5和Q6连结。
如图1A至图2B所示，使用树脂部40密封安装在冷却装置20上的部件。安装在冷却装置20上的部件包括：绝缘基板31、32、33和34；晶体管Q1、Q2、Q3、Q4、Q5和Q6；二极管D1、D2、D3、D4、D5和D6；导电板70、72、74、76和78以及线W。在约120℃模制树脂部40。
上述实施方式具有下述优点。
（1）用作半导体装置的逆变器模块10包括：冷却装置20；绝缘基板31、32、33和34；晶体管Q1、Q2、Q3、Q4、Q5和Q6；二极管D1、D2、D3、D4、D5和D6；导电板70、72、74、76和78以及连接销86。绝缘基板31、32、33和34硬钎焊至冷却装置20的外表面。此外，在导电板70、72、74、76和78的第二端部以及连接销86的第二端子露出的状态下，树脂部40模制到绝缘基板31至34、晶体管Q1至Q6、二级管D1至D6、导电板70、72、74、76和78的第一端部、连接销86的第一端子以及冷却装置20的至少一部分。
以这种方式，绝缘基板31、32、33和34硬钎焊（通过金属整合）至冷却装置20。此外，半导体元件（即，晶体管Q1、Q2、Q3、Q4、Q5和Q6以及二极管D1、D2、D3、D4、D5和D6）、导电板70、72、74、76和78以及连接销86嵌于冷却装置20的树脂部40中。此外，导电板70、72、74、76和78以及连接销86从树脂部40露出并且通过树脂集成为冷却装置模块。
绝缘基板31、32、33和34硬钎焊至冷却装置20的外表面。这提高了冷却半导体元件（即，晶体管Q1、Q2、Q3、Q4、Q5和Q6以及二极管D1、D2、D3、D4、D5和D6）的能力。此外，树脂部40模制到绝缘基板31至34、半导体元件（即，晶体管Q1、Q2、Q3、Q4、Q5和Q6以及二极管D1、D2、D3、D4、D5和D6）、导电板70、72、74、76和78的第一端部、连接销86的第一端子以及冷却装置20的至少一部分。这排除了对专用固定构件的需要并且允许减小尺寸。
详细地，绝缘基板31、32、33、34通过金属与冷却装置20直接连结（通过金属与冷却装置20整合）。此外，半导体元件（即，晶体管Q1、Q2、Q3、Q4、Q5和Q6以及二极管D1、D2、D3、D4、D5和D6）软钎焊至绝缘基板31、32、33和34。这允许直接冷却半导体元件从而提高了冷却能力。此外，通过树脂部40对整个冷却装置20的整合提高了可靠性。另外，通过树脂部40对整个冷却装置20的密封排除了对于固定结构的需要并且允许减小尺寸。以这种方式，将树脂模制到包括冷却装置20的构件上允许减小尺寸，而这在使用如图9所示的固定支架102（推压构件）时是不可能的。此外，图9的硅脂103变得不必要。
以这种方式，树脂部40提高了元件的连结部处的可靠性，提高了冷却能力并且允许减小尺寸。
（2）在冷却装置20中，上板24和下板25的周缘部硬钎焊在一起，并且冷却剂通道P1形成在上板24与下板25之间。树脂模制至位于上板24和下板25的周缘部处的硬钎焊部B。这样改善了对上板24和下板25的密封。
以这种方式，树脂部40覆盖冷却装置20的侧表面。对于增强冷却装置的密封（防水密封）是优选地。
（3）半导体装置制造方法包括硬钎焊步骤、随后的软钎焊步骤以及后续的模制步骤。参照图4和图5，硬钎焊步骤将形成冷却装置20的上板24（第一壳板）和下板25（第二壳板）的周缘部连结起来。硬钎焊步骤还连结绝缘基板31、32、33、34。参照图6A和图6B，软钎焊步骤将用作半导体元件的晶体管Q1至Q6以及二极管D1至D6安装在绝缘基板31、32、33和34上，并且将用作半导体元件的晶体管Q1至Q6与用作外部连接端子的导电板70、72、74、76和78的第一端部连结。参照图1A至图2B，模制步骤将树脂部40模制到绝缘基板31、32、33和34；晶体管Q1至Q6；二极管D1至D6；导电板70、72、74、76和78的第一端部以及上板24的至少一部分，同时使导电板70、72、74、76和78的第二端部露出。树脂部40的模制提高了元件的连结部的可靠性并且增大了冷却能力。此外，逆变器模块10的尺寸可以减小。
对本领域的技术人员明显的是，在不脱离本发明的精神或范围的情况下，本发明可以以许多其他的具体形式实施。特别地，应当理解的是，本发明可以实施为以下形式。
参照图7，代替使用树脂部40来完全密封冷却装置20的侧表面，冷却装置20的侧表面可以由树脂部40部分地密封。
参照图8，代替使用树脂部40来密封冷却装置20的侧表面，树脂部40可以仅仅密封冷却装置20的上表面。这减小了冷却装置20与树脂部40之间的接触面积，并且降低了由树脂部40施加至冷却装置20的力F1。因而，抑制了由外力引起的冷却装置20的变形。此外，可以减少树脂的量。
尽管绝缘基板31、32、33和34是DBA基板，但绝缘基板也可以是各自包括被铜层夹在中间的陶瓷基板35的直接硬钎焊铜（DBC）基板。
尽管本发明应用于用作电力转换装置的逆变器，但本发明还可以应用于其他类型的电力转换装置，比如变流器。
本发明的示例和实施方式要被视为说明性的而非限制性的，并且本发明不限于本文中给出的细节，而是可以在所附权利要求的范围和等同方案内修改。

Claims (6)

1.一种半导体装置，包括：
冷却装置，所述冷却装置包括冷却剂通道；
绝缘基板，所述绝缘基板硬钎焊至所述冷却装置的外表面；
半导体元件，所述半导体元件软钎焊至所述绝缘基板；
外部连接端子，所述外部连接端子包括电连接至所述半导体元件的第一端部和相反的第二端部；以及
树脂部，所述树脂部模制到所述绝缘基板、所述半导体元件、所述外部连接端子的所述第一端部以及至少一部分所述冷却装置上。
2.根据权利要求1所述的半导体装置，其中，所述树脂部以所述外部连接端子的所述第二端部从所述树脂部露出的状态模制。
3.根据权利要求1或2所述的半导体装置，其中，
所述冷却装置包括第一壳板和第二壳板，并且所述第一壳板和所述第二壳板各自包括周缘部，
所述周缘部硬钎焊在一起以使所述第一壳板和所述第二壳板成整体，并且
所述冷却剂通道形成在所述第一壳板与所述第二壳板之间。
4.根据权利要求3所述的半导体装置，其中，
所述第一壳板的周缘部和所述第二壳板的周缘部硬钎焊在一起而形成硬钎焊部，并且
所述树脂部模制到所述硬钎焊部。
5.一种用于制造半导体装置的方法，所述方法包括：
通过连结第一壳板和第二壳板形成冷却装置，其中，所述第一壳板包括周缘部并且所述第二壳板包括周缘部，所述第二壳板的周缘部与所述第一壳板的周缘部被硬钎焊在一起；
将所述第一壳板和绝缘基板硬钎焊在一起以连结所述第一壳板和所述绝缘基板；
将半导体元件安装在所述绝缘基板上；
将所述半导体元件与外部连接端子的第一端部软钎焊在一起，以连结所述半导体元件和所述外部连接端子；以及
将树脂部模制在所述绝缘基板、所述半导体元件、所述外部连接端子的所述第一端部以及至少一部分所述第一壳板上。
6.根据权利要求6所述的用于制造半导体装置的方法，其中，以所述外部连接端子的第二端部从所述树脂部露出的状态模制所述树脂部。
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