CN103238205B - 激光切割用辅助片 - Google Patents

激光切割用辅助片 Download PDF

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CN103238205B
CN103238205B CN201180058468.0A CN201180058468A CN103238205B CN 103238205 B CN103238205 B CN 103238205B CN 201180058468 A CN201180058468 A CN 201180058468A CN 103238205 B CN103238205 B CN 103238205B
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laser cutting
supplementary plate
adhesive linkage
laser
cutting supplementary
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CN103238205A (zh
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丸山光则
阿部信行
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Kimoto Co Ltd
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Abstract

本发明提供一种即使在使用了短波长的激光的切割工序中也不会被全部切割、且不会使作业性降低的激光切割用辅助片。本发明的激光切割用辅助片的特征在于，是含有由聚烯烃膜构成的基材和所述基材的一面上所具有的粘接层的激光切割用辅助片，300～400nm的波长区域下的全光线透过率为50％以上，300～400nm的波长区域下的雾度为70％以上。

Description

激光切割用辅助片
技术领域
本发明涉及在利用激光的照射使半导体晶片、光器件晶片等基板单片化来制造半导体芯片、光器件等时，用于固定该半导体晶片、光器件晶片等基板所优选使用的激光切割用辅助片。
背景技术
在半导体晶片、光器件晶片等基板中，例如对于半导体晶片，会在表面形成了电路后进行如下工序：对半导体晶片的背面侧实施磨削加工，调节半导体晶片的厚度的背面磨削工序；以及，使半导体晶片单片化至预定的芯片尺寸的切割工序。另外，继背面磨削工序之后，有时还会对背面实施蚀刻处理·抛光处理等加工处理、如向背面蒸镀金属膜这样在高温下进行的处理。
在上述的切割工序中，通常进行将切割用辅助片固定于半导体晶片的操作(专利文献1)。通过在上述工序中使用该切割用辅助片，从而可以防止半导体芯片发生破片(碎片)、芯片发生飞散的情况，并且还可以防止半导体晶片的破损。上述切割用辅助片通常具有在由塑料膜等构成的基材层上涂布丙烯酸系粘接剂等并进行干燥、从而层叠厚度约1～50μm的粘接层的结构。
半导体晶片的切割通常使用旋转圆刀(刮刀)来进行，近年来提出了使用激光的切割(激光切割)。通过激光切割，有时即使利用刀具切割仍难以切断的工件也可被切断，因而受到关注。提出了多种用于这种激光切割的激光切割片(专利文献2～3)。
在先技术文献
专利文献
专利文献1：日本特开平2-187478号公报
专利文献2：日本特开2002-343747号公报
专利文献3：日本特开2005-236082号公报
发明内容
发明所要解决的课题
近年来，对这样的半导体芯片、光器件芯片等提出了小型化·薄型化的要求，为了应对该要求，也需要使半导体晶片、光器件晶片等的基板薄型化。如果使上述半导体晶片、光器件晶片等的基板薄型化则通常强度会降低，为了保证强度已开始使用具有高于以往的硬度的基板、例如，已开始使用蓝宝石基板、在铜上蒸镀银的基板等。
这些基板如上所述具有高硬度，因此对于一直以来所使用的激光而言在切割上述基板的能力方面将存在不足。因此，近年来为了应对上述问题，已开始使用300～400nm左右的短波长的激光。
上述短波长激光的能量密度高切割能力优异，但例如如果是半导体晶片，则在切割工序中不只是半导体晶片而且会将切割辅助胶带全切割，产生半导体芯片的回收的作业性降低的问题。
本发明的一个方面是提供即使在使用了短波长的激光的切割工序中也不会被全切割、且不会使作业性降低的激光切割用辅助片。
用于解决课题的方法
本发明人发现通过使用聚烯烃膜作为基材，并且以具备特定的光学特性的方式来构成，从而可以得到具备上述性能的激光切割用辅助片，进而完成了本发明。
即，本发明的激光切割用辅助片的特征在于，是含有基材和在基材的一面所具有的粘接层的激光切割用辅助片，基材含有聚烯烃膜，300～400nm的波长区域下的全光线透过率为50％以上，300～400nm的波长区域下的雾度为70％以上。
另外，本发明的激光切割用辅助片的特征在于，优选基材含有单层或多层的聚丙烯膜或聚乙烯膜，或者含有多层的聚丙烯膜及聚乙烯膜。
发明的效果
根据上述发明，激光切割用辅助片是含有基材和在所述基材的一面所具有的粘接层的激光切割用辅助片，基材含有聚烯烃膜，300～400nm的波长区域下的全光线透过率为50％以上，300～400nm的波长区域下的雾度为70％以上，因此在使用了短波长的激光的切割工序中不会被全切割、且不存在使作业性降低的情况。
具体实施方式
本发明的激光切割用辅助片的特征在于，是含有基材和在所述基材的一面所具有的粘接层的激光切割用辅助片，基材含有聚烯烃膜，300～400nm的波长区域下的全光线透过率为50％以上，300～400nm的波长区域下的雾度为70％以上。以下，以半导体晶片的加工作业为例，对各构成要素的实施方式进行说明。
需要说明的是，本发明的“全光线透过率”是指JISK7375：2008中规定的全光线透过率。另外，“雾度”是指利用下述的计算式计算出的值。
雾度(％)＝(扩散光透光率/全光线透过率)×100
另外，“300～400nm的波长区域下的全光线透过率”是指，在300～400nm的波长区域下内，每隔1nm的间隔测定全光线透过率而得的值的平均值。另外，“300～400nm的波长区域下的雾度”是指，在300～400nm的波长区域下中，每隔1nm间隔测定雾度而得的值的平均值。
对于本发明的激光切割用辅助片而言，300～400nm的波长区域下的全光线透过率为50％以上。通过使上述波长区域下的全光线透过率为50％以上，从而可以防止短波长的激光在该激光切割用辅助片上停留，可以防止该激光切割用辅助片发生破断。300～400nm的波长区域下的全光线透过率优选为70％以上，更优选为80％以上。
另外，对于本发明的激光切割用辅助片而言，300～400nm的波长区域下的雾度为70％以上。通过使雾度为70％以上，从而可以在短波长的激光被照射至该激光切割用辅助片时使光分散，可以防止该激光切割用辅助片发生破断。雾度优选为75％以上，更优选为80％以上。
需要说明的是，本发明所规定的300～400nm的波长区域下的全光线透过率及雾度是指使光从本发明的激光切割用辅助片的粘接层侧入射时的值，但是也可以在使光从基材侧入射时满足上述的值。
基材含有聚烯烃膜。聚烯烃膜相对于波长为300～400nm左右的短波长激光其透光率较高，因此通过使用该聚烯烃膜作为激光切割用辅助片，从而可以防止因短波长激光的照射而被全切割的情况。
作为聚烯烃膜，可以列举出：聚乙烯膜、聚丙烯膜、聚丁烯膜、聚甲基戊烯膜、乙烯-丙烯共聚物、乙烯-丙烯-丁烯共聚物等的膜。其中优选使用量产性优异且激光加工性低的聚乙烯膜、聚丙烯膜，特别优选使用聚乙烯膜。
该聚烯烃膜中，为了满足本申请发明所规定的全光线透过率、雾度而可以含有颜料。作为这样的颜料，可以列举出：由苯乙烯树脂、聚乙烯树脂、聚氨酯树脂、苯并胍胺树脂、尼龙树脂、硅酮树脂、丙烯酸树脂等构成的有机树脂粒子，二氧化硅、硫酸钡、氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钛、氧化钙、氧化镁、氧化铝、氧化锆、氮化铝、硼酸铝晶须、氮化硼等无机粒子等。
作为基材所使用的聚烯烃膜既可以是由一张上述这样的膜构成的聚烯烃膜(单层)，也可以是将多张同一种类或不同种类(例如聚丙烯膜和聚乙烯膜)的聚烯烃膜贴合而得的层叠结构(多层)。
作为基材的厚度(在基材为层叠结构的情况下，指总厚度)，优选为30～300μm，更优选为50～150μm。通过设为30μm以上，从而可以适当防止利用短波长激光进行的全切割。另外，通过设为300μm以下，从而可以维持扩展性(全部方向的均匀拉伸性)，另外，可以防止给本发明中规定的光学特性带来影响的情况。只要基材的厚度在30～300μm的范围内，就会比较容易地满足本发明所规定的全光线透过率及雾度。
作为粘接层，可以使用丙烯酸系压敏粘接剂、橡胶系压敏粘接剂等压敏粘接剂，热熔粘接剂等粘接剂，可热压接的热塑性树脂膜等。另外，从工序中(切割等)的被粘物的固定方面优异、并且在工序结束后易于从切割用辅助片将被粘物剥离的方面出发，优选在常温下具有压敏粘接性、且粘接力会因加热或电离放射线照射等所引起的交联固化而降低的粘接剂。
另外，在粘接层中，为了满足本发明所规定的全光线透过率及雾度，而可以含有有机树脂粒子、无机粒子。这些有机树脂粒子、无机粒子可以使用与上述的聚烯烃膜中所述的物质相同的物质。需要说明的是，在使粘接层中含有上述颜料成分的情况下，相对于粘接层的粘接成分(粘接剂)100重量份，通过限制于10重量份左右以下的含量，从而将会比较容易地满足本发明所规定的全光线透过率及雾度。
作为粘接层的厚度，优选设为3～50μm，更优选设为5～30μm。通过设为3μm以上，从而可以维持作为辅助片的优选的粘接力。另外，通过设为50μm以下，从而可以良好地维持扩展性。只要粘接层的厚度为3～50μm的范围内，就会比较容易地满足本发明所规定的全光线透过率及雾度。
另外，还可以在粘接层中添加流平剂等添加剂。
为了形成上述的粘接层，可以列举出如下方法：根据需要加入添加剂、稀释溶剂等，而使构成粘接层的材料形成涂布液来进行调节，利用现有公知的涂布方法将该涂布液涂布、干燥的方法；使构成粘接层的树脂成分熔融，使其含有其他的必要成分(无机颜料等)并片材化的方法等。
根据本发明的激光切割用辅助片，其为含有基材和在所述基材的一面所具有的粘接层的激光切割用辅助片，基材含有聚烯烃膜，300～400nm的波长区域下的全光线透过率为50％以上，300～400nm的波长区域下的雾度为70％以上，因此即使在对高硬度的基板使用短波长的激光加工中也不会被全切割，因而优选使用。
本发明的激光切割用辅助片例如在以下这样的半导体芯片的制造工序中被使用。即，在半导体晶片的形成有电路的面的相反面，贴附本发明的激光切割用辅助片，从半导体晶片的形成有电路的面照射激光，按照每个电路将该半导体晶片单片化来制造半导体芯片。
适用于本发明的半导体晶片可以列举出高硬度的半导体晶片。
该晶片表面的电路的形成可以通过蚀刻法、剥离法等现有公知的方法来进行。电路呈格子状而形成于该晶片的内周部表面，在距外周边缘数mm的范围内残留有不存在电路的剩余部分。该晶片的磨削前的厚度没有特别限定，通常为500～1000μm左右。
当对半导体晶片的背面进行磨削加工时，为了保护表面的电路而可以在电路面侧贴附表面保护片。背面磨削加工如下进行：利用承载盘(チヤツクテ一ブル)等将该晶片的电路面侧固定，利用研磨机对未形成电路的背面侧进行磨削。在背面磨削时，首先将整个背面磨削至预定的厚度，之后仅对与表面的电路形成部分(内周部)相对应的背面内周部进行磨削，与未形成电路的剩余部分相对应的背面区域则不进行磨削而使其残存。其结果是，磨削后的半导体晶片仅背面的内周部被更薄地磨削，而在外周部分残存环状的凸部。这样的背面磨削方法可以利用现有公知的方法来进行。在背面磨削工序之后，可以进行将磨削而生成的破碎层除去的处理。
继背面磨削工序之后，可以根据需要对背面实施蚀刻处理等伴随着发热的加工处理、对背面的金属膜的蒸镀、有机膜的烘烤这样的在高温下进行的处理。需要说明的是，在进行高温下的处理的情况下，在将表面保护片剥离后，进行对表面的处理。
在背面磨削工序后，在该晶片的电路面的反面侧贴附本发明的激光切割用辅助片，进行该晶片的切割。激光切割用辅助片的向该晶片的贴附通常利用被称为贴膜机的装置进行，但没有特别限定。
接着，从该激光切割用辅助片的半导体晶片侧照射激光，对该晶片进行切割。在本发明中，为了对高硬度的半导体晶片进行全切割，而使用能量密度高的短波长的激光。作为这样的短波长激光，例如可以优选使用Nd-YAG激光器的第三谐波(波长355nm)。激光的强度、照度依赖于所要切断的该晶片的厚度，但只要是可将该晶片全切割的程度即可。
向电路间的轨道照射上述的短波长激光，按照每个电路将该晶片小片化。激光扫描一个轨道的次数可以是一次也可以是多次。优选对激光的照射位置和电路间的轨道的位置进行监视，在进行激光的位置核对的同时进行激光的照射。
使用具有特定的光学特性的本发明的激光切割用辅助片，对半导体晶片的形成有电路的面的相反面进行保持，从该半导体晶片的电路面侧照射激光来进行切割，可以不使该激光切割用辅助片全切割而将半导体晶片全切割，因此可以作业性良好地制造半导体芯片。
切割结束后，从激光切割用辅助片拾取半导体芯片。作为拾取的方法，其没有特别限定，可以采用现有公知的各种方法。例如，可以列举出：从激光切割用辅助片侧利用针对每个半导体芯片进行推顶(日文：突き上げる)，利用拾取装置拾取经推顶的半导体芯片的方法等。另外，在由紫外线固化型粘接剂形成激光切割用辅助片的粘接层的情况下，在拾取前，向该粘接层照射紫外线使粘接力降低，之后进行拾取。
之后，利用常用的方法对被拾取的半导体芯片进行芯片贴装、树脂封装来制造半导体装置。
以上，以使用半导体晶片作为被粘物的情况为例进行了说明，但本发明的切割用辅助片并不限定于此，也可以用于半导体封装体、使用了蓝宝石基板或在铜上蒸镀银的基板等的光器件晶片、玻璃基板、陶瓷基板、FPC等有机材料基板、精密部件等的金属材料等的切割用途。
实施例
以下，利用实施例对本发明进行进一步说明。需要说明的是，“份”、“％”只要没有特别表示，则表示重量基准。
1.激光切割用辅助片的制作
[实施例1]
作为基材而在厚度100μm的聚乙烯膜的一个面上，利用棒式涂布法涂布含有下述组成的粘接层用涂布液并干燥，以使干燥后的厚度达到23μm，从而形成粘接层，得到实施例1的激光切割用辅助片。
<实施例1的粘接层用涂布液>
·丙烯酸系压敏粘接剂100份
(CORPONIELN4823：日本合成化学公司)
·异氰酸酯化合物0.44份
(CORONATEL45E：日本聚氨酯工业公司)
·稀释溶剂54份
[实施例2]
使用厚度110μm的聚乙烯膜作为基材，除此之外，在与实施例1相同的条件下形成粘接层，得到实施例2的激光切割用辅助片。
[实施例3]
设计为，将实施例1的粘接层用涂布液变更为下述组成的粘接层用涂布液，以使干燥后的厚度达到22μm，除此之外，进行与实施例1相同的操作，得到实施例3的激光切割用辅助片。
<实施例3的粘接层用涂布液>
·丙烯酸系压敏粘接剂100份
(CORPONIELN4823：日本合成化学公司)
·异氰酸酯化合物0.44份
(CORONATEL45E：日本聚氨酯工业公司)
·硅酮树脂粒子4份
(TOSPEARL120：MomentivePerformanceMaterialsJapan合同会社)
·稀释溶剂63份
[实施例4]
设计为，将实施例1的粘接层用涂布液变更为下述组成的粘接层用涂布液，使干燥后的厚度达到26μm，除此之外，进行与实施例1相同的操作，得到实施例4的激光切割用辅助片。
<实施例4的粘接层用涂布液>
·丙烯酸系压敏粘接剂100份
(CORPONIELN4823：日本合成化学公司)
·异氰酸酯化合物0.44份
(CORONATEL45E：日本聚氨酯工业公司)
·氧化锆4份
(PCS：日本电工公司)
·稀释溶剂63份
[实施例5]
将实施例1的粘接层用涂布液变更为下述组成的粘接层用涂布液，除此之外，进行与实施例1相同的操作，得到实施例5的激光切割用辅助片。
<实施例5的粘接层用涂布液>
·丙烯酸系压敏粘接剂100份
(CORPONIELN4823：日本合成化学公司)
·异氰酸酯化合物0.44份
(CORONATEL45E：日本聚氨酯工业公司)
·碳酸钙3.27份
(SunlightSL700：竹原化学工业公司)
·胶体二氧化硅0.24份
(AEROSILR972：日本AEROSIL公司)
·氧化钛0.48份
(MultilacW106：东洋油墨制造公司)
·稀释溶剂63份
[实施例6]
将硅酮树脂粒子设为20份，将稀释溶剂设为100份，除此之外，进行与实施例3相同的操作来准备粘接层用涂布液。在作为基材的厚度100μm的聚丙烯膜的一面上，利用棒式涂布法涂布该涂布液并干燥，以使干燥后的厚度达到22μm，从而形成粘接层，得到实施例6的激光切割用辅助片。
[比较例1]
将碳酸钙设为16.36份，将胶体二氧化硅设为1.21份，将氧化钛设为2.42份，将稀释溶剂设为173份，除此之外，进行与实施例5相同的操作来准备粘接层用涂布液。在作为基材的与实施例6相同的聚丙烯膜的一面上，利用棒式涂布法涂布该涂布液并干燥，以使干燥后的厚度达到25μm，从而形成粘接层，得到比较例1的激光切割用辅助片。
[比较例2]
将氧化锆设为20份，将稀释溶剂设为55份，除此之外，进行与实施例4相同的操作来准备粘接层用涂布液。在作为基材的与实施例6相同的聚丙烯膜的一面上，利用棒式涂布法涂布、干燥该涂布液以使干燥后的厚度达到23μm，从而形成粘接层，得到比较例2的激光切割用辅助片。
[比较例3]
使用CORPONIELN3527(日本合成化学公司)作为丙烯酸系压敏粘接剂，除此之外，进行与实施例1相同的操作来准备粘接层用涂布液。在作为基材的厚度90μm的聚丙烯膜的一面上，利用棒式涂布法涂布该涂布液并干燥，以使干燥后的厚度达到23μm，从而形成粘接层，得到比较例3的激光切割用辅助片
2.评价
(1)全光线透过率
对于实施例1～6及比较例1～3的激光切割用辅助片，使用分光光度计(UV-3101PC：岛津制作所公司)每隔1nm的间隔对300～400nm的波长区域下的全光线透过率(JISK7375：2008)进行分光、测定，得到这些值的平均值。需要说明的是，测定为使光从粘接层侧入射。将结果示于表1。
(2)雾度值
对于实施例1～6及比较例1～3的激光切割用辅助片，使用分光光度计(UV-3101PC：岛津制作所公司)每隔1nm的间隔对300～400nm的波长区域下的扩散光透光率进行分光、测定。需要说明的是，测定为使光从粘接层侧入射。接着，将上述(1)中测定的300～400nm的波长区域下的每隔1nm间隔的全光线透过率和扩散光透光率代入以下的雾度的计算式，从而对雾度值进行计算，得到它们的平均值。将计算结果示于表1。
雾度(％)＝(扩散光透光率/全光线透过率)×100
(3)切割适合性
基于下述的激光器照射条件，使用Nd-YAG激光器从该辅助片的粘接层侧向实施例1～6及比较例1～3的激光切割用辅助片照射激光光线。其结果是，将基材仅被切割小于50μm的情况设为“◎”，将基材被切割50μm以上且小于80μm的情况设为“○”，将基材被切割80μm以上但未被全切割的情况设为“△”，将基材被全切割的情况设为“×”。将结果示于表1。
<激光器照射条件>
波长：355nm
重复频率：100kHz
平均输出功率：5w
照射次数：4次/1线
脉冲宽度：50ns
聚光斑：椭圆形(长轴100μm、短轴10μm)
加工进给速度：100mm/秒
【表1】
由以上的结果可知，实施例1～6的激光切割用辅助片含有由聚烯烃膜构成基材、和在所述基材的一面所具有的粘接层，300～400nm的波长区域下的全光线透过率为50％以上，300～400nm的波长区域下的雾度为70％以上，即使使用短波长的激光也不会被全切割。因此，利用实施例1～6的激光切割用辅助片，即使在使用了短波长的激光的半导体晶片的切割工序中也不会被全切割，不会使作业性降低。
特别是，就实施例1～3的激光切割用辅助片而言，300～400nm的波长区域下的全光线透过率为70％以上，300～400nm的波长区域下的雾度为80％以上，因此该切割用辅助片被切割的比例更低，耐久性优异。
另外，实施例1～5的激光切割用辅助片使用了聚乙烯膜作为基材，因此即使在使用了短波长的激光的切割工序中，被切割的比例仍更低，耐久性优异。
另一方面，就比较例1及2的激光切割用辅助片而言，300～400nm的波长区域下的全光线透过率小于50％，因此短波长的激光停留在激光切割用辅助片内，任一激光切割用辅助片均被全切割。就比较例3的激光切割用辅助片而言，虽然300～400nm的波长区域下的全光线透过率为50％以上，但300～400nm的波长区域下的雾度小于70％，因此在短波长的激光被照射至该激光切割用辅助片时无法使光分散，从而被全切割。因此可知，如果利用比较例1～3的激光切割用辅助片，则在使用了短波长的激光的半导体晶片的切割工序中，半导体芯片的回收的作业性变差。
接着，对于实施例1的激光切割用辅助片，当从基材侧以400mj/cm2的照射量照射紫外线时，紫外线照射前的粘接力为20N/25mm，照射后变为0.6N/25mm，粘接力降低。因此可知，当在切割工序中使用本发明的激光切割用辅助片时，将易于从被粘物剥离，作业性良好。

Claims (12)

1.一种激光切割用辅助片，其特征在于，是含有基材和在所述基材的一面所具有的粘接层的激光切割用辅助片，
所述基材含有聚烯烃膜，
300～400nm的波长区域下的全光线透过率为50%以上，
300～400nm的波长区域下的雾度为70%以上。
2.根据权利要求1所述的激光切割用辅助片，其特征在于，
所述基材含有单层或多层的聚丙烯膜或聚乙烯膜，或者含有多层的聚丙烯膜及聚乙烯膜。
3.根据权利要求1所述的激光切割用辅助片，其特征在于，
所述粘接层含有在常温下具有压敏粘接性、因加热或电离辐射线的照射而交联固化从而粘接力降低的粘接剂。
4.根据权利要求1所述的激光切割用辅助片，其特征在于，
300～400nm的波长区域下的雾度为80%以上。
5.根据权利要求1所述的激光切割用辅助片，其特征在于，
300～400nm的波长区域下的全光线透过率为70%以上。
6.根据权利要求1所述的激光切割用辅助片，其特征在于，
基材的厚度为30～300μm。
7.根据权利要求3所述的激光切割用辅助片，其特征在于，
粘接层的厚度为3～50μm。
8.根据权利要求3所述的激光切割用辅助片，其特征在于，
粘接层中含有有机树脂粒子或/和无机粒子作为颜料成分。
9.根据权利要求8所述的激光切割用辅助片，其特征在于，
相对于粘接层的粘接剂100重量份，颜料成分的含量为10重量份以下。
10.根据权利要求1所述的激光切割用辅助片，其特征在于，
粘接层的厚度为3～50μm。
11.根据权利要求1所述的激光切割用辅助片，其特征在于，
粘接层中含有有机树脂粒子或/和无机粒子作为颜料成分。
12.根据权利要求11所述的激光切割用辅助片，其特征在于，
相对于粘接层的粘接剂100重量份，颜料成分的含量为10重量份以下。
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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101508686B1 (ko) * 2013-05-14 2015-04-08 세계화학공업(주) 실리콘 필름층이 형성된 내열 레이저 가공용 표면 보호용 점착테이프
KR101508688B1 (ko) * 2013-05-14 2015-04-08 세계화학공업(주) 탄석 필름층이 형성된 내열 레이저 가공용 표면 보호용 점착테이프
WO2015182801A1 (ko) * 2014-05-30 2015-12-03 세계화학공업(주) 실리콘 필름층이 형성된 내열 레이저 가공용 표면 보호용 점착테이프
CN106795396B (zh) * 2014-12-02 2020-12-18 琳得科株式会社 粘着片以及加工物的制造方法
JP6401043B2 (ja) * 2014-12-24 2018-10-03 株式会社きもと レーザーダイシング用補助シート
JP6078581B2 (ja) * 2015-04-30 2017-02-08 日東電工株式会社 一体型フィルム、フィルム、半導体装置の製造方法および保護チップの製造方法
WO2017116941A1 (en) * 2015-12-30 2017-07-06 3M Innovative Properties Company Infrared absorbing adhesive films and related methods
JP6088701B1 (ja) * 2016-10-06 2017-03-01 株式会社きもと レーザーダイシング用補助シート
JP6298226B1 (ja) * 2017-03-30 2018-03-20 リンテック株式会社 保護膜形成用複合シート
KR102445532B1 (ko) * 2017-03-30 2022-09-20 린텍 가부시키가이샤 보호막 형성용 복합 시트
CN109536061B (zh) * 2017-07-28 2022-01-25 东丽先端材料研究开发（中国）有限公司 一种粘合薄膜
KR102285900B1 (ko) * 2018-09-20 2021-08-03 주식회사 엘지화학 다이싱 필름 및 다이싱 다이본딩 필름
TW202100686A (zh) * 2019-03-15 2021-01-01 日商琳得科股份有限公司 附支撐片的膜狀燒成材料、輥體、積層體、以及裝置之製造方法
JP7474146B2 (ja) 2019-10-15 2024-04-24 マクセル株式会社 ダイシングテープ用溶液流延型基材フィルム及びダイシングテープ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1898056A (zh) * 2003-12-25 2007-01-17 日本电工株式会社 激光加工用保护片以及激光加工品的制造方法
CN101157830A (zh) * 2006-10-04 2008-04-09 日东电工株式会社 激光加工用粘合片

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2887274B2 (ja) 1989-01-13 1999-04-26 日東電工株式会社 再剥離型粘着剤
JP3669196B2 (ja) * 1998-07-27 2005-07-06 日東電工株式会社 紫外線硬化型粘着シート
JP4886937B2 (ja) 2001-05-17 2012-02-29 リンテック株式会社 ダイシングシート及びダイシング方法
CN1703773B (zh) * 2002-06-03 2011-11-16 3M创新有限公司 层压体以及用该层压体制造超薄基片的方法和设备
WO2004096483A1 (ja) * 2003-04-25 2004-11-11 Nitto Denko Corporation レーザー加工品の製造方法、およびそれに用いるレーザー加工用粘着シート
JP4405246B2 (ja) * 2003-11-27 2010-01-27 スリーエム イノベイティブ プロパティズ カンパニー 半導体チップの製造方法
ATE553638T1 (de) * 2003-12-25 2012-04-15 Nitto Denko Corp Verfahren zur herstellung durch laser werkstücke
JP2005236082A (ja) * 2004-02-20 2005-09-02 Nitto Denko Corp レーザーダイシング用粘着シート及びその製造方法
JP2006104246A (ja) * 2004-10-01 2006-04-20 Sumitomo Chemical Co Ltd 粘着用積層体
JP4799205B2 (ja) * 2006-02-16 2011-10-26 日東電工株式会社 活性面貼付ダイシング用粘着テープ又はシートおよび被加工物の切断片のピックアップ方法
TW200842174A (en) * 2006-12-27 2008-11-01 Cheil Ind Inc Composition for pressure sensitive adhesive film, pressure sensitive adhesive film, and dicing die bonding film including the same
KR100922684B1 (ko) * 2007-08-31 2009-10-19 제일모직주식회사 점착층용 광경화 조성물 및 이를 포함하는 다이싱 테이프
JP2009297734A (ja) * 2008-06-11 2009-12-24 Nitto Denko Corp レーザー加工用粘着シート及びレーザー加工方法
JP5193752B2 (ja) 2008-08-28 2013-05-08 リンテック株式会社 レーザーダイシングシートおよび半導体チップの製造方法
EP2331647A4 (en) * 2008-09-17 2012-02-01 3M Innovative Properties Co OPTICAL ADHESIVE WITH DIFFUSION PROPERTIES
JP5124778B2 (ja) 2008-09-18 2013-01-23 リンテック株式会社 レーザーダイシングシートおよび半導体チップの製造方法
JP5537789B2 (ja) * 2008-10-01 2014-07-02 日東電工株式会社 レーザー加工用粘着シート及びレーザー加工方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1898056A (zh) * 2003-12-25 2007-01-17 日本电工株式会社 激光加工用保护片以及激光加工品的制造方法
CN101157830A (zh) * 2006-10-04 2008-04-09 日东电工株式会社 激光加工用粘合片

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Formulating of a novel polyolefin hazy film and the origins of haze thereof;Xiao-Yong Chen,Ming Xiang;《Polymer Bulletin》;Springer;20091224;第64卷(第9期);正文摘要，正文第931页表5 *
流延法制备PVA/TiO2复合薄膜的性能研究;李菲,郝喜海,王振中,李慧敏;《包装学报》;20101031;第2卷(第4期);全文 *

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