CN103231570A - 一种薄膜层及其制作方法、显示用基板、液晶显示器 - Google Patents

一种薄膜层及其制作方法、显示用基板、液晶显示器 Download PDF

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CN103231570A
CN103231570A CN2013101250654A CN201310125065A CN103231570A CN 103231570 A CN103231570 A CN 103231570A CN 2013101250654 A CN2013101250654 A CN 2013101250654A CN 201310125065 A CN201310125065 A CN 201310125065A CN 103231570 A CN103231570 A CN 103231570A
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thin layer
layer
sublayer
density
thin film
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CN103231570B (zh
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姜清华
李小和
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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Priority to CN201310125065.4A priority Critical patent/CN103231570B/zh
Priority to US14/361,131 priority patent/US9502571B2/en
Priority to PCT/CN2013/077441 priority patent/WO2014166162A1/zh
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Abstract

本发明提供一种薄膜层及其制作方法、显示用基板、液晶显示器，属于显示器技术领域，其可解决现有方法制得的薄膜层边缘坡度过陡甚至垂直，导致下一步沉积的薄膜层容易产生台阶覆盖不良甚至断线的问题。本发明的薄膜层包括多个不同致密度的子层，其中，在上的子层的致密度小于在下的子层的致密度。采用本发明的薄膜层制备的薄膜晶体管和薄膜晶体管液晶显示器的良品率高、可靠性高。

Description

一种薄膜层及其制作方法、显示用基板、液晶显示器
技术领域
本发明属于显示器技术领域，具体涉及一种薄膜层及其制作方法、含有该薄膜层的显示用基板、含有该显示用基板的液晶显示器。
背景技术
在薄膜晶体管液晶显示器（TFT-LCD）中，薄膜晶体管作为显示器的核心部件，其制造工艺的良品率直接决定薄膜晶体管液晶显示器的成本和可靠性。现有的薄膜晶体管制备工艺中，薄膜晶体管的各薄膜层的制备又是关键的步骤，其中，薄膜层边缘坡度的大小直接影响下一步沉积的薄膜层的覆盖性的好坏，当前薄膜边缘坡度过陡甚至垂直时，往往会导致下一步沉积的薄膜层覆盖不良甚至发生断线；而如果当前薄膜边缘坡度缓和，覆盖不良或断线的情况就可以大幅度的避免，所以薄膜层边缘坡度的控制是薄膜晶体管工艺中的关键。
在现有TFT-LCD工艺中，每个薄膜层在制备中采用相同工艺参数制备，导致每个薄膜层的结晶度和致密度是一致的，如图1所示，在基板3上制备当前薄膜层2，形成的当前薄膜层2的结晶度和致密度是均匀一致的，当涂覆光刻胶1曝光后，进行蚀刻时，同样的酸浓度（湿法刻蚀）或等离子体强度（干法刻蚀）对当前薄膜层2蚀刻速率也会大致相同，蚀刻后的效果图如图2所示，当前薄膜层2的边缘坡度会比较陡，不利于下一工序的薄膜层4的沉积，容易产生台阶覆盖不良甚至断线现象，如图3所示。
发明内容
本发明的目的是解决现有方法制得的薄膜层边缘坡度过陡甚至垂直，导致下一步沉积的薄膜层容易产生台阶覆盖不良甚至断线的问题，提供一种覆盖良好的薄膜层。
解决本发明技术问题所采用的技术方案是一种薄膜层，所述的薄膜层包括多个不同致密度的子层，其中，在上的子层的致密度小于在下的子层的致密度。
本发明提供的薄膜层，由于每个薄膜层是具有多个不同致密度的子层，在后继的刻蚀过程中在相同的酸液浓度或者等离子体强度下，每个子层的蚀刻速率是不同的，蚀刻速率与致密度成反比，经过相同的刻蚀时间后，刻蚀长度不同，将使获得薄膜层边缘坡度较为缓和。由于当前薄膜层边缘坡度缓和，下一工序的薄膜层覆盖时覆盖性良好，不会产生断线现象。
优选的是，所述的薄膜层的每个子层的厚度为1nm-500nm。
进一步优选的是，所述的薄膜层的每个子层的厚度为10nm-50nm。
优选的是，所述的薄膜层的每个子层的厚度相同，有利于形成较为平缓的边缘坡度。
优选的是，所述的薄膜层的子层至少为3层。
优选的是，所述的薄膜层是铝层、铜层、氧化铟锡层、氧化锌层、SiNx层、SiOx层中的任意一种。
本发明的另一个目的是提供一种薄膜层的制作方法，包括：
设置初始工艺条件，形成所述薄膜层的初始子层；
按照每一个工艺条件的变化对所述薄膜层致密度大小的影响，调节所述至少一个工艺条件，形成以所述初始子层为基准、致密度依排列顺序依次减小的至少两个后续子层。
优选的是，所述设置初始工艺条件包括：设置初始的磁控溅射功率、气体流量、生成温度、溅射压力、靶基间距。
所述按照每一个工艺条件的变化对所述薄膜层致密度大小的影响，调节所述至少一个工艺条件，形成以所述初始子层为基准、致密度依排列顺序依次减小的至少两个后续子层包括：
采用降低磁控溅射功率和/或降低气体流量的调节方式，形成第二子层；
采用降低磁控溅射功率和/或降低气体流量的调节方式，形成一个或多个后续子层。
优选的是，所述设置初始工艺条件包括：设置初始的等离子体功率、气体流量、生成温度。
所述按照每一个工艺条件的变化对所述薄膜层致密度大小的影响，调节所述至少一个工艺条件，形成以所述初始子层为基准、致密度依排列顺序依次减小的至少两个后续子层包括：
采用降低等离子体功率和/或降低气体流量的调节方式，形成第二子层；
采用降低等离子体功率和/或降低气体流量的调节方式，形成一个或多个后续子层。
本发明的另一个目的是提供一种薄膜晶体管，包括：上述的薄膜层。
本发明的另一个目的是提供一种显示用基板，包括：基板以及设置在所述基板上的多个像素结构；其特征在于，所述像素结构包括至少一个上述的薄膜层。
优选的是，所述显示用基板为阵列基板，每一像素结构中的一个所述薄膜层为栅绝缘层，或为钝化层。
本发明的另一个目的是提供一种液晶显示器，该液晶显示器包括上述的显示用基板。
采用本发明的方法制备的液晶显示器的良品率高、可靠性高。
附图说明
图1为现有技术的薄膜晶体管的薄膜层制备过程中当前层刻蚀前的示意图。
图2为现有技术的薄膜晶体管的薄膜层制备过程中当前层刻蚀后的示意图。
图3为现有技术的薄膜晶体管的薄膜层制备过程中下一工序薄膜层覆盖后的示意图。
图4为本发明实施例1中薄膜晶体管的薄膜层制备过程中当前层刻蚀前的示意图。
图5为本发明实施例1中薄膜晶体管的薄膜层制备过程中当前层刻蚀后的示意图。
图6为本发明实施例1中薄膜晶体管的薄膜层制备过程中下一工序薄膜层覆盖后的示意图。
其中：1.光刻胶；2.当前薄膜层；21.当前薄膜层中致密度较大的部分；22.当前薄膜层中致密度适中的部分；23.当前薄膜层中致密度较低的部分；3.基板；4.下一工序的薄膜层。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例1
本实施例提供一种薄膜层，该薄膜层包括多个不同致密度的子层，其中，在上的子层的致密度小于在下的子层的致密度。
实施例2
本实施例提供一种薄膜层的制作方法，含该薄膜层的薄膜晶体管。
1）采用磁控溅射形成具有不同致密度子层的薄膜层
将在玻璃基板置于磁控溅射室，通过控制磁控溅射装置的直流溅射功率为80KW，Ar流量为900sccm，溅射气压为0.3pa，靶基间距为60mm，衬底温度（生成温度）为200℃，沉积时间为20s，形成致密度较大的厚度为70nm的Al薄膜层，即如图4所示，当前薄膜层致密度较大部分23；
接着调节上述磁控溅射参数的直流溅射功率为75KW，Ar流量为800sccm，溅射气压为0.3pa，靶基间距为60mm，衬底温度为200℃，沉积时间为18s，形成致密度适中的厚度为50nm的Al薄膜层，即如图4所示，当前薄膜层致密度适中部分22；
最后调节上述磁控溅射参数的直流溅射功率为70KW，Ar流量为800sccm，溅射气压为0.3pa，靶基间距为60mm，衬底温度为200℃，沉积时间为15s，形成致密度较低的厚度为30nm的Al薄膜层，即如图4所示，当前薄膜层致密度较低部分21。
这样Al薄膜层由致密度不同的、从基板向一侧致密度降低的3层组成。优选的，也可以根据当前薄膜层的实际厚度分成更多的子层，有利于形成更为缓和的边缘坡度。
可以理解的是，上述磁控溅射装置也可以根据具体的目的选用其它类型的，控制参数也可以根据靶材材质、子层的厚度的不同进行调整，属于现有技术的范畴。
可以理解的是，上述的Al薄膜层可以是其它金属层或者金属氧化物薄膜层、优选的，可以是铜层、氧化铟锡层、氧化锌层中的任意一种。
可以理解的是，子层的厚度可以根据具体应用需要进行选取，优选的，薄膜层的子层的厚度也可以为1nm-500nm，更优选的，薄膜层的子层的厚度也可以为10nm-50nm。
优选的，Al薄膜层的子层的厚度也可以相同，有利于形成较为平缓的边缘坡度。
优选的，Al薄膜层的子层至少为3层，有利于形成较为平缓的边缘坡度。
2）对上述制备的具有不同致密度子层的Al薄膜层进行涂覆光刻胶1，完成曝光步骤（属于现有技术范畴）。
3）将制备的具有不同致密度子层的Al薄膜层进行湿法刻蚀
优选的，刻蚀液为磷酸、硝酸和醋酸的混合液，三者的物质的量浓度比例为69︰10︰2.5，玻璃基板在刻蚀液里的振荡速度3000mm/min，刻蚀时间为15s。上述的具有不同致密度子层的Al薄膜层的每个子层在酸溶液蚀刻速率是不同的，蚀刻速率与致密度成反比，经过相同的刻蚀时间后，刻蚀长度不同，获得如图5所示的当前薄膜层边缘坡度。
4）进行剥除光刻胶的步骤（属于现有技术范畴），按上述的方法进行下一工序的制备，由于当前薄膜层边缘坡度缓和，此时下一工序的薄膜层覆盖时，覆盖性良好，如图6所示，得到作为薄膜晶体管栅极层的Al薄膜层。
通过多次上述的构图方法制造薄膜晶体管中的其它必要结构层，例如，栅绝缘层、有源层、欧姆接触层、源电极、漏电极层等，获得薄膜晶体管。当然，其中不同层的薄膜的具体材料、工艺参数等不同；同时，对于不会产生阶覆盖不良现象的层结构，也可用常规的方法制造（即沉积的薄膜密度均匀，没有密度梯度）。
当然，本实施例的构图方法也并不限用于制造薄膜晶体管中的层结构，其也可用于制造其他的结构。
实施例3
本实施例提供一种薄膜层的制作方法，含该薄膜层的薄膜晶体管。
1）采用等离子体增强化学气相沉积法形成具有不同致密度子层的薄膜层
将在玻璃基板置于沉积腔室，通过控制等离子体功率为20KW，H2流量为50000sccm，SiH4流量为6000sccm，NH3流量为20000sccm，衬底温度（生成温度）为360℃，沉积时间为15s，形成致密度较大的厚度为200nm的SiNx层；
接着调节上述等离子体功率为18KW，H2流量为48000sccm，SiH4流量为5700sccm，NH3流量为19500sccm，衬底温度为360℃，沉积时间为20s，形成致密度适中的厚度为200nm的SiNx层；
最后调节上述等离子体功率为16KW，H2流量为46000sccm，SiH4流量为5500sccm，NH3流量为18500sccm，衬底温度为360℃，沉积时间为20s，形成致密度较低的厚度为200nm的SiNx层。
这样SiNx层由致密度不同的、从基板向一侧致密度降低的3层组成。优选的，也可以根据当前薄膜层的实际厚度分成更多的层，有利于形成更为缓和的边缘坡度。
可以理解的是，上述等离子体增强化学气相沉积装置也可以根据具体的目的选用其它类型的，控制参数也可以根据薄膜材质、子层的厚度的不同进行调整，属于现有技术的范畴。
可以理解的是，上述的SiNx层可以是其它非金属薄膜层、优选的，也可以是SiOx层。
可以理解的是，薄膜层的子层的厚度可以根据具体应用需要进行选取，优选的，薄膜层的子层的厚度也可以为1nm-500nm，更优选的，薄膜层的子层的厚度也可以为10nm-50nm。
优选的，薄膜层的子层的厚度也可以相同，有利于形成较为平缓的边缘坡度。
优选的，薄膜层的子层至少为3层，有利于形成较为平缓的边缘坡度。
2）对上述的制备的具有不同致密度子层的SiNx层进行涂覆光刻胶1，完成曝光步骤（属于现有技术范畴）。
3）将制备的具有不同致密度子层的SiNx层进行干法刻蚀
优选的，控制干法蚀刻等离子刻蚀装置的功率为8KW，腔体压力为50mT，SF6流量为800sccm，O2流量为10000sccm，Cl2流量为7000sccm，刻蚀时间为30s。上述的具有不同致密度子层的SiNx薄膜层每个子层在相同的等离子强度下的蚀刻速率是不同的，蚀刻速率与致密度成反比，经过相同的刻蚀时间后，刻蚀长度不同，也能获得类似图5所示的当前薄膜层边缘坡度。
4）进行剥除光刻胶的步骤（属于现有技术范畴），按上述的方法进行下一工序的制备，由于薄膜层边缘坡度缓和，此时下一工序的薄膜层覆盖时，覆盖性良好；
通过多次上述的构图方法制造薄膜晶体管中的其它必要结构层，例如，栅绝缘层、有源层、欧姆接触层、源电极、漏电极层等，获得薄膜晶体管。当然，其中不同层的薄膜的具体材料、工艺参数等不同；同时，对于不会产生阶覆盖不良现象的层结构，也可用常规的方法制造（即沉积的薄膜密度均匀，没有密度梯度）。
当然，本实施例的构图方法也并不限用于制造薄膜晶体管中的层结构，其也可用于制造其他的结构。
实施例4
本实施例提供一种显示用基板，包括：基板以及设置在所述基板上的多个像素结构；所述像素结构包括至少一个上述的薄膜层。
优选的，所述显示用基板为阵列基板，每一像素结构中的一个所述薄膜层为栅绝缘层。
优选的，所述显示用基板为阵列基板，每一像素结构中的一个所述薄膜层也可以为钝化层
实施例5
本实施例提供一种液晶显示器，该液晶显示器包括上述的显示用基板。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (13)

1.一种薄膜层，其特征在于，所述的薄膜层包括多个不同致密度的子层，其中，在上的子层的致密度小于在下的子层的致密度。
2.如权利要求1所述的薄膜层，其特征在于，所述的薄膜层的每个子层的厚度为1nm-500nm。
3.如权利要求2所述的薄膜层，其特征在于，所述的薄膜层的每个子层的厚度为10nm-50nm。
4.如权利要求1所述的薄膜层，其特征在于，所述的薄膜层的每个子层的厚度相同。
5.如权利要求1所述的薄膜层，其特征在于，所述的薄膜层的子层至少为3层。
6.如权利要求1-5任一所述的薄膜层，其特征在于，所述的薄膜层是铝层、铜层、氧化铟锡层、氧化锌层、SiNx层、SiOx层中的任意一种。
7.一种薄膜层的制作方法，其特征在于，包括：
设置初始工艺条件，形成所述薄膜层的初始子层；
按照每一个工艺条件的变化对所述薄膜层致密度大小的影响，调节所述至少一个工艺条件，形成以所述初始子层为基准、致密度依排列顺序依次减小的至少两个后续子层。
8.根据权利要求7所述的制作方法，其特征在于，所述设置初始工艺条件包括：设置初始的磁控溅射功率、气体流量、生成温度、溅射压力、靶基间距。
所述按照每一个工艺条件的变化对所述薄膜层致密度大小的影响，调节所述至少一个工艺条件，形成以所述初始子层为基准、致密度依排列顺序依次减小的至少两个后续子层包括：
采用降低磁控溅射功率和/或降低气体流量的调节方式，形成第二子层；
采用降低磁控溅射功率和/或降低气体流量的调节方式，形成一个或多个后续子层。
9.根据权利要求7所述的制作方法，其特征在于，所述设置初始工艺条件包括：设置初始的等离子体功率、气体流量、生成温度。
所述按照每一个工艺条件的变化对所述薄膜层致密度大小的影响，调节所述至少一个工艺条件，形成以所述初始子层为基准、致密度依排列顺序依次减小的至少两个后续子层包括：
采用降低等离子体功率和/或降低气体流量的调节方式，形成第二子层；
采用降低等离子体功率和/或降低气体流量的调节方式，形成一个或多个后续子层。
10.一种薄膜晶体管，其特征在于，包括：如权利要求1-6任一所述的薄膜层。
11.一种显示用基板，包括：基板以及设置在所述基板上的多个像素结构；其特征在于，所述像素结构包括至少一个如权利要求1所述的薄膜层。
12.根据权利要求11所述的显示用基板，其特征在于，所述显示用基板为阵列基板，每一像素结构中的一个所述薄膜层为栅绝缘层，或为钝化层。
13.一种液晶显示器，其特征在于，包括如权利要求11或12所述的显示用基板。
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