CN1032268A - 超导器件及其制造 - Google Patents

超导器件及其制造 Download PDF

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Publication number
CN1032268A
CN1032268A CN88106054A CN88106054A CN1032268A CN 1032268 A CN1032268 A CN 1032268A CN 88106054 A CN88106054 A CN 88106054A CN 88106054 A CN88106054 A CN 88106054A CN 1032268 A CN1032268 A CN 1032268A
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Prior art keywords
film
substrate
superconducting
superconducting film
superconductive
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CN88106054A
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CN1017110B (zh
Inventor
山崎舜平
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority claimed from JP62202145A external-priority patent/JPS6445146A/ja
Priority claimed from JP62202144A external-priority patent/JP2747557B2/ja
Priority claimed from JP62202142A external-priority patent/JPS6445143A/ja
Priority claimed from JP62202143A external-priority patent/JPH0736404B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN1032268A publication Critical patent/CN1032268A/zh
Publication of CN1017110B publication Critical patent/CN1017110B/zh
Expired legal-status Critical Current

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Abstract

一种利用超导材料的经改良的电器。为防止要 在衬底上形成超导材料的陶瓷的烘烤过程中产生不 希望有的氧化，将超导材料只设在超导材料不与所述 半导体衬底的工作区接触的位置。

Description

本发明是关于一种超导器件及其制造方法。
在力图将集成电路制造得使其具有更大的集成度的同时，要求集成电路具有高的工作速率。集成电路的电路结构精密，这使其各放热部件产生了工作速率和可靠性降低的问题。因此若能驱使半导体器件在液氮的温度下工作，则其电子和空穴的迁移率将为在室温下的3至4倍，从而可以改进其频率特性。
以本专利申请书受让人的名义于一九八七年三月九日申请的日本专利申请书昭-62-053724介绍了在半导体器件中采用超导体所作的努力。在该专利申请书中，提出了以超导陶瓷材料作为引线的建议。超导陶瓷在半导体基片上的适当位置敷设之后要在氧化气氛中长时间烘烤。正是由于这个原因，半导体的某些表面部分往往会被氧化，形成氧化膜。例如在硅半导体器件的情况下，其超导电极附近就会有氧化硅形成。
因此本发明的目的是提供一种不会因接触超导陶瓷的部分产生氧化或因受超导材料的有害影响而变质的超导器件。
本发明的另一个目的是提供一种制造这样一种超导器件的方法，该超导器件不会因超导陶瓷的烘烤或因受超导材料的其它有害影响而影响其特性。
图1（A）至1（D）是显示制造本发明的超导器件的方法的横向剖视示意图。
图2（A）至2（C）是显示对本发明超导器件所作的改进的横向剖视图。
图3（A）至3（D）是显示本发明制造超导器件的另一种方法的横向剖视图。
参看图1（A）至1（D），这是本发明制造绝缘栅场效应晶体管的方法的示意图。
硅半导体衬底1的上部分经过局部氧化形成场绝缘膜2。此结构的上部表面是在高温下氧化形成200埃厚的氧化硅膜3。借助于硅与氨的固相-气相反应在氧化硅膜3极薄的上部分上设置5-20埃厚的氮化硅阻挡层膜4。
然后在氩气和氧气的气氛中用溅射方法，在700℃的衬底温度下在该结构上淀积0.2至2微米（例如0.5微米）厚的超导陶瓷膜5。输入功率在50赫频率下为100瓦。靶的组成为YBa2Cu3.6O6-8。采用此靶就可以使淀积出来的陶瓷其组成与YBa2Cu3O6-8一致。临界温度约为4K。
其次溅射Cu、Ag或Al，以便在超导陶瓷膜5上淀积100-10000埃厚的金属膜6。必要时还可在超导陶瓷膜5上淀积0.1至0.5微米厚的TiSi2膜。或者，这种导电膜6也可以由掺以磷或硼的硅材料、钨之类的不氧化的耐热金属、或WSi2之类的金属半导体制成。不管怎么说，本实施例要求导电膜6耐热。
在结构上已形成光致抗蚀剂掩模的情况下，借助等离子体刻蚀之类的刻蚀法除去由膜4、5和6组成的叠层部分。刻蚀剂为硫酸或盐酸之类的酸类。刻蚀之后将光致抗蚀剂除去。
然后用离子注入法在硅半导体衬底里形成源区12和漏区13，接着在950℃下进行热退火。冷却之后，在500～600℃下对结构进行补助性退火，如图1（B）所示。补助性退火使超导陶瓷材料形成钙钛矿状的经调制的结构，从而使其临界温度变高。衬底上设有多层的超导引线10和10′，供在半导体衬底中或衬底上形成的各元件和接点之间和由多层超导体制成的栅电极11作互连之用。
在结构的整个上部表面形成0.3-1.0微米厚的夹层绝缘膜14，然后用周知的光刻法有选择地将其除去以形成孔口15和16。引线10超导膜5的一部分在15-1处通过孔口15暴露出来，同时源区12在衬底内形成的一部分也在15-2处通过孔口15暴露出来。部分漏区13也通过孔口16暴露出来。
在整个结构上形成0.3至1.0微米厚的铝膜和0.05至0.2微米厚的非反应金属膜;然后有选择地加以腐蚀以便在源区12和漏区13上形成接点19和18。这些接点可通过在其上再涂敷以超导陶瓷膜使其电阻等于零。形成接点18和19的材料应选取与有关半导体相适应的材料，例如WSi2、MOSi2或Si。采用金属通常是不合适的，因为半导体往往会吸收金属。
图2（A）显示本发明的第二个实施例，这是对前一个实施例所做的修改方案。其中各相应部件采用同样的编号。引线10和10′以及栅电极11都是由超导陶瓷膜5构成的，夹在与超导膜5相适应的下金属膜6-1与上金属膜6-2之间。绝缘膜14′的一个孔口中形成有电极19以便将上金属膜6-1的表面15-1与半导体的上表面15-2连接起来。此外还形成了电极19以便通过绝缘膜14′中形成的孔口与漏区13的表面接触。电极19和19′是用选择性生长法由钨制成的。电极19′的上部分与由超导陶瓷膜18-2和金属膜18-1组成的引线18电气连接起来。
这种复合超导引线10的应用如图2（B）所示。耐热衬底1的表面上形成有金属膜6-1、超导陶瓷膜5和Cu或Ag膜6-3构成的复合电极。衬底1选用热膨胀系数大致与超导材料的相等材料制取，例如氧化铝、YSZ（钇稳定的锆）或钛酸锶。下导电膜6-1向内延伸，形成若干其上按倒装焊接法通过凸缘21装有集成电路芯片的接点。集成电路芯片可装在上导电膜6-3上，如图2（C）所示。
在图2（B）和2（C）所示实例中使用的衬底可以是陶瓷衬底、塑料衬底、印刷板，等等。这些超导图案的制作，可以通过淀积一超导陶瓷薄膜、在其上形成一金属膜，并用酸的刻蚀法，选择性地除去有掩掉的金属膜和超导膜。在具有这些超导图案的表面上，用线焊安装和连接集成电路芯片、晶体管芯片和其它呈微型芯片的元件（SMC）。
图3（A）至3（D）是显示本发明另一种制造方法的横向剖视图。此实施例基本上与第一个实施例一样，因而类似的部件采用同样的编号，这里不再赘述。
按第一个实施例同样的方式形成5-20埃厚的阻挡层膜之后，淀积超导陶瓷膜5，然后进行退火，再在超导陶瓷膜5上形成导电膜6。
源电极和漏电极由普通的导电膜19-1和18-1以及超导膜19-2和18-2构成。普通导电膜则是由0.1～0.3微米厚的铝膜和0.05～0.2微米厚覆在其上的银膜组成的复合膜构成。
本实施例的其它元件，尽管不加以说明却与第一个实施例相同。
本发明所用的超导陶瓷也可按化学计算式（A1-xBx）yCuzOw制备，其中A是化学周期表中一个或一个以上的Ⅲa族元素，例如稀土元素，B是化学周期表中一个或一个以上的Ⅱa族元素，例如碱土金属，包括铍和镁，且X＝0-1;Y＝2.0-4.0，最好是2.5-3.5;Z＝1.0-4.0，最好是1.5-3.5;W＝4.0-10.0，最好是6.0-8.0。此外，本发明所用的超导陶瓷也可按化学计算式（A1-xBx）yCuzOw制备，其中A是化学周期表中一个或一个以上的Ⅴb族元素，例如Bi、Sb和As，B是化学周期表中一个或一个以上的Ⅱa族元素，例如碱土金属，包括铍和镁，且X＝0.3-1;Y＝2.0-4.0，最好是2.5-3.5;Z＝1.0-4.0，最好是1.5-3.5;W＝4.0-10.0，最好是6.0-8.0。这个一般式的实例有BiSrCaCu3Ox和Bi4Sr3Ca3Cu4Ox。经证实符合化实式Bi4SryCa3Cu4Ox（y约为1.5）的Tc初始值和Tco采样值，经测定为40～60°K，不高。符合化学计算式Bi4Sr4Ca2Cu4Ox和Bi2Sr3Ca2Cu2Ox的试样，测出的临界温度较高。表示氧比率的X值为6～10，例如约为8.1。这样的超导材料可用丝网压制印刷法、真空蒸发法或化学汽相淀积法制取。
此外一些引起人们广泛注意的有机材料也可用以实施本发明。
尽管这里介绍了一些实施例，但本发明只应受本说明书所附权利要求的限制而不应受该诸特殊实例的限制。举例说，本发明可应用于甚大规模集成电路和超大规模集成电路。

Claims (10)

1、一种超导器件，其特征在于，该超导器件包括：
一半导体衬底；
一在所述衬底内形成的半导体器件；
至少一个电极，由导电材料制成，在形成过程中与所述半导体相适应；和
一超导引线，与所述电极相连接，用以从所述半导体器件取出输出信号。
2、权利要求1的超导器件，其特征在于，所述半导体器件是个绝缘栅晶体管。
3、权利要求2的超导器件，其特征在于，绝缘栅由所述超导引线的一部分形成。
4、权利要求3的超导器件，其特征在于，所述超导引线是在场绝缘薄膜上形成的。
5、权利要求1的超导器件，其特征在于，所述超导引线是由金属膜和超导膜构成的叠层。
6、制造超导器件的一种方法，其特征在于，该方法包括下列步骤：
在一衬底上形成一超导膜;
在所述衬底上形成电子器件，其中所述电子器件和所述超导膜彼此分开安置;和
形成导电膜，以便将所述电子器件的端子与所述超导器件连接起来。
7、一种制造场效应晶体管的方法，其特征在于，该方法包括下列步骤：
在半导体衬底的上部表面形成绝缘膜;
在所述绝缘膜上形成超导膜;
部分除去所述绝缘膜和所述超导膜以便留下超导引线;
在所述半导体衬底没有所述超导膜的表面形成源区和漏区;
形成源接点和漏接点，用以将所述源区和漏区分别与所述超导引线连接起来。
8、权利要求7的方法，其特征在于，所述除去步骤是为了将所述超导膜的一部分形成栅极而进行的。
9、权利要求8的方法，其特征在于，所述超导膜是一种由下金属膜和超导陶瓷膜构成的复合膜。
10、一种超导电路，其特征在于它包括：
一具有非导电表面的衬底;
一在所说非导电表面形成的超导图案;以及
一在所说衬底上与该超导图案电性连接的电子器件，
其中所说超导图案是从一个由一超导膜和一金属膜组成的复合膜制得的，所说器件只在所说超导膜的金属膜处连接。
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JP62202142A JPS6445143A (en) 1987-08-13 1987-08-13 Superconducting device
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