CN103165479B - 多芯片系统级封装结构的制作方法 - Google Patents

多芯片系统级封装结构的制作方法 Download PDF

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CN103165479B
CN103165479B CN201310067499.3A CN201310067499A CN103165479B CN 103165479 B CN103165479 B CN 103165479B CN 201310067499 A CN201310067499 A CN 201310067499A CN 103165479 B CN103165479 B CN 103165479B
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于大全
刘海燕
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National Center for Advanced Packaging Co Ltd
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Abstract

本发明公开了一种多芯片系统级封装结构的制作方法，该结构包括具有TSV硅通孔和凸点结构的转接板芯片，一个大尺寸芯片和多个小尺寸芯片或小尺寸芯片的堆叠。本发明将单颗大芯片倒装连接至转接板晶圆；再经转接板晶圆切割、电性能测试；小尺寸芯片或小尺寸芯片堆叠与转接板芯片互连；再次对转接板封装结构进行电性能测试；转接板封装结构与基板互连，形成最终的封装结构。其优点是：本发明的制作方法避免了超薄的硅转接板不易拿持的问题，并显著提高了封装效率和产品的良率，降低了生产成本。

Description

多芯片系统级封装结构的制作方法
技术领域
本发明涉及一种多芯片系统级封装结构的制作方法，具体是一种将多个芯片集成于硅转接板上的2.5D封装结构制作方法。
背景技术
随着电子产品不断向小型化、多功能、智能化的方向发展，半导体器件的集成度不断提高，集成电路的特征尺寸也在不断缩小。但是，当IC的特征尺寸接近物理极限时，研究人员通过发展新技术、新材料、新设计方法，研发出了先进的封装形式来延续摩尔定律的发展。以硅通孔（TSV）转接板技术为代表的2.5D、3D封装形式，将芯片集成于硅转接板上，通过转接板进行扇出和芯片互联，可有效改善封装体的散热、降低信号之间的串扰等问题。
在先进的封装形式中，常需要将多个芯片集成于一个封装体中，如将微处理器芯片和flash程序存储芯片、图形处理器（GPU）和随机存储器（RAM）集成到一个转接板基片中，再通过转接板与基板互连形成封装体结构，以实现电子器件的某些特定功能。这种多芯片封装形式提高了封装密度，缩短了芯片之间的引脚距离，可显著提高相邻芯片间的带宽并降低了功耗。
在现有封装工艺中，将多个IC芯片集成到转接板上的方法主要有两种。美国专利US 8313982B2、US2012/0098123A1采用芯片-芯片（chip to chip）方式完成多个IC芯片与转接板芯片的互连。该方法首先将减薄后的转接板切割成单颗芯片并临时键合到承载晶圆上，然后完成多个IC芯片和转接板芯片的互连，最后通过转接板芯片和承载晶圆的拆键合，将承载晶圆移除。但随着半导体工艺的发展和转接板厚度的不断减小，大尺寸的超薄转接板芯片如何进行拿持是该方法中的一个工艺难题。
美国专利US 7915080B2给出的另外一种封装方法是将所有待组装芯片以芯片-晶圆（chip to wafer）方式集成到转接板晶圆上，完成芯片的封装后对整体封装结构进行测试，最后对转接板晶圆切片，形成最终的封装结构。在该制作方法中，封装结构的测试在完成所有芯片的封装后进行，导致了较低的产品良率；同时，实际的封装工艺中，由于待封装的多个芯片其凸点节距、安装精度可能存在较大差异，需用热压键合、回流等不同的方式完成其与转接板的互连。而该方法提供的芯片与转接板晶圆互连方式单一，其应用受到一定限制。
发明内容
本发明的目的是克服现有技术中存在的不足，提供一种多芯片系统级封装结构的制作方法，该方法可广泛应用于不同种类芯片的系统集成，可有效降低转接板芯片拿持的难度，提高芯片封装的生产效率和产品良率。
按照本发明提供的技术方案，所述多芯片系统级封装结构的制作方法包括以下步骤：
1）  利用粘结剂将具有垂直硅通孔和凸点结构的转接板晶圆临时键合到承载晶圆上；
2）  将大尺寸芯片倒装在转接板晶圆的第一表面并完成互连；
3）  完成转接板晶圆和承载晶圆的拆键合，移除承载晶圆，形成转接板封装结构；
4）  对步骤3形成的转接板封装结构进行第一次电性能测试；
5）  将带有单颗大尺寸芯片的转接板晶圆切割成单颗芯片，称为转接板芯片，转接板晶圆的第一表面成为转接板芯片的第一表面；
6）  将小尺寸芯片或小尺寸芯片堆叠倒装到电性能良好的转接板芯片的第一表面并完成互连；
7）  对步骤6形成的转接板芯片封装结构进行第二次电性能测试；
8）  将电性能良好的转接板芯片的第二表面与基板互连，形成最终的封装结构。
所述大尺寸芯片通过回流或热压键合的方式完成与转接板晶圆的电气互连；所述小尺寸芯片或小尺寸芯片堆叠采用回流或热压键合的方式完成与转接板芯片的电气互连。
所述转接板晶圆带有TSV垂直硅通孔金属化填充结构，填充材料为铜或钨中的一种。
所述大尺寸芯片面积大于小尺寸芯片。所述大尺寸芯片可以为中央处理器（CPU）、微处理器（MPU）、图形处理器（GPU）、数字信号处理器（DSP）、射频收发器。所述小尺寸芯片可以为微机械系统（MEMS）、CMOS图像传感器、存储器芯片。
本发明的优点是：本发明用于实现尺寸相差较大的多芯片系统级封装，首先将大尺寸芯片倒装在转接板晶圆上形成电气互连，然后将转接板晶圆切割成单颗基片，再完成小尺寸芯片与单颗转接板芯片的互连。通过该方法实现多芯片的系统级封装，避免了超薄转接板不易拿持的缺点；在大尺寸芯片与转接板完成电气互连后即进行一次电性能测试，可率先淘汰部分电连接失效的封装结构，提高了产品的良率；大尺寸芯片和小尺寸芯片分别与转接板完成互连，可满足不同的互连工艺需求。
附图说明
图1是带有TSV和凸点结构的转接板晶圆剖面图。
图2是完成转接板晶圆和承载晶圆临时键合的示意图。
图3是将大尺寸芯片倒装在转接板晶圆上的示意图。
图4是完成转接板晶圆和承载晶圆拆键合后的示意图。
图5是将小尺寸芯片倒装到转接板芯片上的示意图。
图6是将转接板芯片与基板互连的示意图。
具体实施方式
下面结合附图和实施例对本发明作进一步说明。
本发明涉及的封装结构包括：
具有TSV硅通孔2和凸点3结构的转接板晶圆1，如图1所示，转接板晶圆1下方为BGA(Ball Grid Array)焊点4；TSV通孔金属化填充结构的填充材料可以为铜或钨中的一种；
至少两类待组装的芯片，其中一类为大尺寸芯片7，另一类为小尺寸芯片或小尺寸芯片堆叠8，如图5所示；
大尺寸芯片7倒装到转接板晶圆1上；
转接板晶圆1切片成转接板芯片后，小尺寸芯片或小尺寸芯片堆叠8安装到已完成一次封装的转接板芯片上。
本发明的多芯片系统级封装结构的制作方法，其实施流程如下：
1、如图2所示，利用粘结剂5将具有垂直硅通孔2和凸点3结构的转接板晶圆1临时键合到承载晶圆6上；
2、如图3所示，将大尺寸芯片7倒装在转接板晶圆1的第一表面的相应位置上，以回流或热压键合方式完成两者的电气互连；
3、如图4所示，完成转接板晶圆1和承载晶圆6的拆键合，移除承载晶圆6，形成转接板封装结构；
4、对步骤3形成的转接板封装结构进行第一次电性能测试；
5、将带有单颗大尺寸芯片7的转接板晶圆1切割成单颗芯片，称为转接板芯片，转接板晶圆1的第一表面也就是转接板芯片的第一表面；
6、如图5所示，将小尺寸芯片或小尺寸芯片堆叠8倒装到电性能良好的转接板芯片的第一表面的相应位置上，回流（或热压键合）完成两者的电气互连；
7、对步骤6形成的转接板芯片封装结构进行第二次电性能测试；
8、如图6所示，将电性能良好的转接板芯片的第二表面放置在基板上，回流完成转接板和基板9的互连，形成最终的封装结构。
本发明所述的大尺寸芯片7面积大于小尺寸芯片8。如：大尺寸芯片7可以为中央处理器（CPU）、微处理器（MPU）、图形处理器（GPU）、数字信号处理器（DSP）、射频收发器。小尺寸芯片可以为微机械系统（MEMS）、CMOS图像传感器、存储器芯片。
本发明首先将大尺寸芯片7与转接板晶圆1完成互连，小尺寸芯片或小尺寸芯片堆叠8与切割后的单颗转接板芯片互连。大尺寸芯片7与转接板晶圆1完成互连后，对转接板芯片封装结构进行第一次电性能测试；小尺寸芯片或小尺寸芯片堆叠8与转接板芯片互连后，对封装结构进行第二次电性能测试。该制作方法避免了超薄的硅转接板不易拿持的问题，并显著提高了封装效率和产品的良率，降低了生产成本。

Claims (3)

1.多芯片系统级封装结构的制作方法，其特征是，包括以下步骤：
1） 利用粘结剂将具有垂直硅通孔（2）和凸点（3）结构的转接板晶圆（1）临时键合到承载晶圆（6）上；
2） 将大尺寸芯片（7）倒装在转接板晶圆（1）的第一表面并完成互连；
3） 完成转接板晶圆（1）和承载晶圆（6）的拆键合，移除承载晶圆（6），形成转接板封装结构；
4） 对步骤3形成的转接板封装结构进行第一次电性能测试；
5） 将带有单颗大尺寸芯片（7）的转接板晶圆（1）切割成单颗芯片，称为转接板芯片，转接板晶圆（1）的第一表面成为转接板芯片的第一表面；
6） 将小尺寸芯片或小尺寸芯片堆叠（8）倒装到电性能良好的转接板芯片的第一表面并完成互连；
7） 对步骤6形成的转接板芯片封装结构进行第二次电性能测试；
8） 将电性能良好的转接板芯片的第二表面与基板（9）互连，形成最终的封装结构；
所述大尺寸芯片为中央处理器、微处理器、图形处理器、数字信号处理器或射频收发器；所述小尺寸芯片为微机械系统MEMS、CMOS图像传感器或存储器芯片。
2.如权利要求1所述多芯片系统级封装结构的制作方法，其特征是，所述大尺寸芯片（7）通过回流或热压键合的方式完成与转接板晶圆（1）的电气互连；所述小尺寸芯片或小尺寸芯片堆叠（8）采用回流或热压键合的方式完成与转接板芯片的电气互连。
3.如权利要求1所述多芯片系统级封装结构的制作方法，其特征是，所述转接板晶圆（1）带有垂直硅通孔金属化填充结构，填充材料为铜或钨中的一种。
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