CN103165443A - 一种绝缘栅晶体管器件及其制造工艺方法 - Google Patents
一种绝缘栅晶体管器件及其制造工艺方法 Download PDFInfo
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- CN103165443A CN103165443A CN2011104220967A CN201110422096A CN103165443A CN 103165443 A CN103165443 A CN 103165443A CN 2011104220967 A CN2011104220967 A CN 2011104220967A CN 201110422096 A CN201110422096 A CN 201110422096A CN 103165443 A CN103165443 A CN 103165443A
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 28
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- 229910021645 metal ion Inorganic materials 0.000 claims description 10
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
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- 229910017052 cobalt Inorganic materials 0.000 claims description 4
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- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
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- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
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CN201110422096.7A CN103165443B (zh) | 2011-12-16 | 2011-12-16 | 一种绝缘栅晶体管器件及其制造工艺方法 |
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CN201110422096.7A CN103165443B (zh) | 2011-12-16 | 2011-12-16 | 一种绝缘栅晶体管器件及其制造工艺方法 |
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CN103165443A true CN103165443A (zh) | 2013-06-19 |
CN103165443B CN103165443B (zh) | 2016-02-10 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104022025A (zh) * | 2014-06-06 | 2014-09-03 | 天水天光半导体有限责任公司 | 一种耐高压脉宽调制控制器终端制造方法 |
CN112053952A (zh) * | 2019-06-05 | 2020-12-08 | 上海先进半导体制造股份有限公司 | 高耐压大电流增益的衬底pnp晶体管及其制造方法 |
CN112305667A (zh) * | 2019-07-29 | 2021-02-02 | 中国科学院上海微系统与信息技术研究所 | 光波导器件及其制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5843560A (ja) * | 1981-09-08 | 1983-03-14 | Matsushita Electric Ind Co Ltd | バイポ−ラ集積回路装置 |
JPS63278347A (ja) * | 1987-05-11 | 1988-11-16 | Toshiba Corp | 半導体装置およびその製造方法 |
US5160985A (en) * | 1989-01-06 | 1992-11-03 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate bipolar transistor |
CN1156328A (zh) * | 1996-01-26 | 1997-08-06 | 三星电子株式会社 | 功率半导体器件及其制造方法 |
US6277695B1 (en) * | 1999-04-16 | 2001-08-21 | Siliconix Incorporated | Method of forming vertical planar DMOSFET with self-aligned contact |
CN1666325A (zh) * | 2002-07-24 | 2005-09-07 | 住友电气工业株式会社 | 纵向结型场效应晶体管及其制造方法 |
CN102254930A (zh) * | 2010-05-21 | 2011-11-23 | 株式会社东芝 | 半导体装置及其制造方法 |
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2011
- 2011-12-16 CN CN201110422096.7A patent/CN103165443B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5843560A (ja) * | 1981-09-08 | 1983-03-14 | Matsushita Electric Ind Co Ltd | バイポ−ラ集積回路装置 |
JPS63278347A (ja) * | 1987-05-11 | 1988-11-16 | Toshiba Corp | 半導体装置およびその製造方法 |
US5160985A (en) * | 1989-01-06 | 1992-11-03 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate bipolar transistor |
CN1156328A (zh) * | 1996-01-26 | 1997-08-06 | 三星电子株式会社 | 功率半导体器件及其制造方法 |
US6277695B1 (en) * | 1999-04-16 | 2001-08-21 | Siliconix Incorporated | Method of forming vertical planar DMOSFET with self-aligned contact |
CN1666325A (zh) * | 2002-07-24 | 2005-09-07 | 住友电气工业株式会社 | 纵向结型场效应晶体管及其制造方法 |
CN102254930A (zh) * | 2010-05-21 | 2011-11-23 | 株式会社东芝 | 半导体装置及其制造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104022025A (zh) * | 2014-06-06 | 2014-09-03 | 天水天光半导体有限责任公司 | 一种耐高压脉宽调制控制器终端制造方法 |
CN104022025B (zh) * | 2014-06-06 | 2017-04-26 | 天水天光半导体有限责任公司 | 一种耐高压脉宽调制控制器终端制造方法 |
CN112053952A (zh) * | 2019-06-05 | 2020-12-08 | 上海先进半导体制造股份有限公司 | 高耐压大电流增益的衬底pnp晶体管及其制造方法 |
CN112053952B (zh) * | 2019-06-05 | 2022-02-11 | 上海先进半导体制造有限公司 | 高耐压大电流增益的衬底pnp晶体管及其制造方法 |
CN112305667A (zh) * | 2019-07-29 | 2021-02-02 | 中国科学院上海微系统与信息技术研究所 | 光波导器件及其制备方法 |
CN112305667B (zh) * | 2019-07-29 | 2021-09-14 | 中国科学院上海微系统与信息技术研究所 | 光波导器件及其制备方法 |
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CN103165443B (zh) | 2016-02-10 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140116 |
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