CN103151358A - 薄膜晶体管和包括薄膜晶体管的阵列基板 - Google Patents
薄膜晶体管和包括薄膜晶体管的阵列基板 Download PDFInfo
- Publication number
- CN103151358A CN103151358A CN201210512877XA CN201210512877A CN103151358A CN 103151358 A CN103151358 A CN 103151358A CN 201210512877X A CN201210512877X A CN 201210512877XA CN 201210512877 A CN201210512877 A CN 201210512877A CN 103151358 A CN103151358 A CN 103151358A
- Authority
- CN
- China
- Prior art keywords
- oxide semiconductor
- semiconductor layer
- electrode
- base palte
- array base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 20
- 239000010409 thin film Substances 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 82
- 238000005530 etching Methods 0.000 claims description 19
- 238000009413 insulation Methods 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 7
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 description 11
- 239000011810 insulating material Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
- H01L29/247—Amorphous materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
本发明提供了一种薄膜晶体管和包括薄膜晶体管的阵列基板,所述阵列基板包括:选通线,其位于包括像素区的基板上,选通线在一个方向上延伸;栅极,其位于像素区中并且从所述选通线延伸;栅绝缘层,其位于选通线和栅极上;数据线,其位于所述栅绝缘层上并且与所述选通线交叉,以限定所述像素区;氧化物半导体层,其位于所述栅绝缘层上并且具有三个端部,所述氧化物半导体层对应于所述栅极;蚀刻阻止件,其位于所述氧化物半导体层上,露出所述氧化物半导体层的所述三个端部;源极,其与所述氧化物半导体层的所述三个端部中的两个端部接触并且从所述数据线延伸;以及漏极,其与所述氧化物半导体层的所述三个端部中的一个端部接触并且与所述源极隔开。
Description
本申请要求2011年12月6日在韩国提交的韩国专利申请No.10-2011-0129432的优先权,该韩国专利申请在此以引用方式并入。
技术领域
本发明涉及一种液晶显示器(LCD)的阵列基板,更具体地,涉及一种具有氧化物半导体层的阵列基板,所述氧化物半导体层具有高度稳定的器件特性并且能够抑制由栅极和源极/漏极中的每一个之间的交叠引起的寄生电容,以提高分辨率特性和薄膜晶体管(TFT)的特性。
背景技术
近年来,随着面向信息社会的到来,被构造为处理并显示大量信息的显示装置的领域已快速发展。最近已开发出液晶显示器(LCD)或有机发光二极管(OLED)作为具有优良性能(例如,厚度小、重量轻且功耗低)的平板显示器(FPD),并且已取代传统的阴极射线管(CRT)。
在LCD之中,有源矩阵(AM)型LCD包括阵列基板,该阵列基板具有用作能够控制每个像素的开/关电压的开关元件的TFT,该AM型LCD具有优良的分辨率以及实现运动图像的能力。
AM型LCD必须包括用作打开/关闭每个像素区的开关器件的TFT。
图1是LCD的传统阵列基板11的剖视图,该剖视图示出了TFT的一个像素区。
如图1中所示,多个选通线(未示出)和多个数据线33可以形成在阵列基板11上,并且可以由选通线和数据线33的交叉限定多个像素区P。栅极15可以形成在多个像素区P中的每一个的开关区TrA中。另外,栅绝缘层18可以形成在所得结构的整个表面上,以覆盖栅极15,并且包括由本征非晶硅(a-Si)形成的有源层22和由掺杂非晶硅形成的欧姆接触层26的半导体层28可以随后形成在栅绝缘层18上。
另外,源极36和漏极38可以形成在欧姆接触层26上,以对应于栅极15并且彼此隔开。在这种情况下,可以顺序地堆叠在开关区TrA上的栅极15、栅绝缘层18、半导体层28以及源极36和漏极38可以构成TFT Tr。
此外,包括用于露出漏极38的漏接触孔45的钝化层42可以形成在所得结构的整个表面上,以覆盖源极36和漏极38以及露出的有源层22。像素电极50可以单独形成在钝化层42上的每个像素区P中并且通过漏接触孔45接触漏极38。在这种情况下,具有双重结构的半导体图案29可以形成在数据线33下方,所述双重结构包括第一图案27和第二图案23。半导体图案29可以由与欧姆接触层26和有源层22相同的材料形成。
通过分析具有上述结构的传统阵列基板11的开关区TrA中形成的TFT Tr的半导体层28,可以看到,有源层22中的由本征非晶硅形成的部分被形成为第一厚度t1,在这部分的上方,形成与有源层22分开的欧姆接触层26,并且有源层22中的通过去除欧姆接触层26而露出的其它部分具有与第一厚度t1不同的第二厚度t2。有源层22的厚度差异(t1≠t2)可能是由于制造工艺导致的。由于有源层22存在厚度差异(t1≠t2),更准确地,由于有源层22中的在源极36和漏极38之间露出并且将在其中形成沟道层的部分的厚度减小,导致TFT Tr的特性劣化。
结果,如图2所示(图2为包括具有氧化物半导体层的TFT的传统阵列基板的一个像素区的剖视图),近来已经使用氧化物半导体材料开发出包括具有单个结构的氧化物半导体层80的TFT Tr,而不需要欧姆接触层。
因为氧化物半导体层80不需要欧姆接触层,所以与包括由本征非晶硅形成的有源层(参照图1中的22)的传统阵列基板(参照图1中的11)不同,不必在干蚀刻工艺期间露出氧化物半导体层80以形成由掺杂非晶硅形成的欧姆接触层(参照图1中的26),使得可以防止TFT Tr的特性劣化。
同时,最近已将具有上述构造的LCD用于个人便携式终端(例如,便携式电话和个人数字助理(PDA))。用于小型便携式终端的LCD可以具有比用于电视(TV)或监视器的LCD小的尺寸。
因此,当实现相同的分辨率时,构成显示区的每个像素区的尺寸可能相对减小。
由于上述构造特性,导致在用于小型便携式终端的LCD的阵列基板中,每个像素区中的TFT的面积与每个像素区的面积的比率相对高。
因此,因为TFT由于栅极和源极/漏极之间的交叠而导致具有相对高的寄生电容,所以回踢电压(kick-back voltage)或馈通电压(feed-through voltage)的变化ΔVp也可能增大。结果,可能出现像素电极的充电特性的劣化、闪烁、垂直串扰和余像,从而分辨率特性劣化。
此外,如图3所示(图3为包括具有经旋转的U形沟道的TFT UTr的LCD的传统阵列基板的一个像素区的平面图),在LCD的传统阵列基板中,TFT UTr可以具有U形或经旋转的U形的沟道,以提高TFT UTr的特性并且增大交叠裕量(margin)。具有U形沟道结构的TFT UTr可以减小由于工艺误差造成的栅极90与源极93/漏极94之间的寄生电容的变化。
然而,当包括氧化物半导体层的TFT具有U形或经旋转的U形沟道结构时,蚀刻阻止件的面积可能增大,所以位于蚀刻阻止件外部的氧化物半导体层应该被构造成与源极93/漏极94接触。结果,TFT UTr的面积可能增大。
当TFT UTr的面积增大时,像素区的孔径比可能减小,并且由于栅极90与源极93/漏极94之间的交叠造成的寄生电容整体也可能大量增大。
因此,当在小型便携式终端的LCD的阵列基板上形成包括U形沟道的TFT UTr时,孔径比减小。
另外,因为在具有U形沟道结构的TFT UTr中,栅极90与源极93/漏极94之间的交叠面积相对进一步增大,所以由于栅极90与源极93/漏极94之间的交叠造成的寄生电容Cgs可以相对进一步增大,从而分辨率特性进一步劣化。
发明内容
因此,本发明针对一种基本消除由于相关技术的局限和缺点导致的一种或多种问题的显示装置。
本公开的目的在于提供一种包括氧化物半导体层的阵列基板,该阵列基板可以减小源极/漏极和栅极之间的交叠面积,并且减小由于源极/漏极和栅极之间的交叠而造成的寄生电容,以提高薄膜晶体管(TFT)的特性。
本发明另外的特征和优点将在随后的描述中阐述,并且部分地将从描述中清楚,或者可以通过实践本发明而获知。将通过撰写的说明书及其权利要求书以及附图中具体指出的结构实现和获得本发明的目的和其它优点。
为了实现这些和其它优点并且根据本发明的目的,如本文中实施和广义描述的,一种阵列基板包括:选通线,其位于包括像素区的基板上,所述选通线在一个方向上延伸;栅极,其位于所述像素区中并且从所述选通线延伸;栅绝缘层,其位于所述选通线和所述栅极上;数据线,其位于所述栅绝缘层上并且与所述选通线交叉,以限定所述像素区;氧化物半导体层,其位于所述栅绝缘层上并且具有三个端部,所述氧化物半导体层对应于所述栅极;蚀刻阻止件,其位于所述氧化物半导体层上,以露出所述氧化物半导体层的所述三个端部;源极,其与所述氧化物半导体层的所述三个端部中的两个端部接触并且从所述数据线延伸;以及漏极,其与所述氧化物半导体层的所述三个端部中的一个端部接触并且与所述源极隔开。
在另一个方面,一种薄膜晶体管(TFT)包括:栅极;栅绝缘层,其位于所述栅极上;氧化物半导体层,其位于所述栅绝缘层上并且具有三个端部,所述氧化物半导体层对应于所述栅极;蚀刻阻止件,其位于所述氧化物半导体层上,以露出所述氧化物半导体层的所述三个端部;源极,其与所述氧化物半导体层的所述三个端部中的两个端部接触并且从所述数据线延伸;以及漏极,其与所述氧化物半导体层的所述三个端部中的一个端部接触并且与所述源极隔开。
要理解,以上的总体描述和以下的详细描述都是示例性和说明性的并且旨在对要求保护的本发明提供进一步说明。
附图说明
附图被包括以提供对本发明的进一步理解,并入本说明书且构成本说明书的一部分,附图示出本发明的实施方式并且与描述一起用于说明本发明的原理。在附图中:
图1是LCD的传统阵列基板的剖视图,该剖视图示出TFT的一个像素区;
图2是包括具有氧化物半导体层的TFT的传统阵列基板的一个像素区的剖视图;
图3是包括具有经旋转的U形沟道的TFT的LCD的传统阵列基板的一个像素区的平面图;
图4是根据本发明的第一实施方式的包括具有氧化物半导体层的TFT的LCD的阵列基板的一个像素区中形成的TFT的放大平面图;
图5是根据本发明的第一实施方式的改进例的包括具有氧化物半导体层的TFT的LCD的阵列基板的一个像素区中形成的TFT的放大平面图;以及
图6是沿着图4的VI-VI线截取的TFT的剖视图。
具体实施方式
现在将详细描述优选实施方式,在附图中示出这些实施方式的例子。
图4是根据本发明的第一实施方式的在包括具有氧化物半导体层的TFT的LCD的阵列基板101的一个像素区中形成的TFT的放大平面图。
如图4中所示,选通线103可以形成在一个方向上,并且数据线130可以形成为与选通线103交叉并且限定像素区P。在这种情况下,栅极105可以从选通线103分支并且形成在每个像素区P中。
另外,用作开关元件的TFT Tr可以形成在每个像素区P中的选通线103和数据线130的交叉处附近,并且连接到选通线103和数据线130中的每一个。
在这种情况下,TFT Tr可以包括连接到选通线103的栅极105、栅绝缘膜(未示出)、氧化物半导体层120、蚀刻阻止件125以及在蚀刻阻止件125上彼此分开形成的源极133和漏极136。
在这种情况下,氧化物半导体层120具有三个端部。在图4中,从平面图看,氧化物半导体层120具有T形或经旋转的T形,但是氧化物半导体层120的形状不限于此。
源极133可以与沿T平面形或经旋转的T平面形的氧化物半导体层120的直线设置的两个端部接触,并且漏极136可以与氧化物半导体层120的剩余的一个端部接触。
具体地,源极133可以具有从数据线130延伸并且彼此隔开的两个端部。例如,源极133可以具有U形或经旋转的U形。漏极136可以具有条形,该条形可以在源极133的两个端部在其中彼此隔开的区域中延伸。氧化物半导体层120可以与具有上述形状的源极133和漏极136的端部接触,并且具有T形或经旋转的T形。
同时,蚀刻阻止件125可以形成在氧化物半导体层120与源极133和漏极136之间。蚀刻阻止件125可以与T形或经旋转的T形的氧化物半导体层120的中部交叠,并且同时露出氧化物半导体层120的三个端部中的每一个。
在这种情况下,源极133和漏极136可以被形成为使得源极133和漏极136的相对端部位于一条直线上。另选地,如第二实施方式中所示,条形的漏极136可以插在U形或经旋转的U形的源极133的两个端部在其中彼此隔开的区域中。换句话讲,条形的漏极136的端部可以插在U形源极133的两个端部之间的开口中。
在根据本发明的实施方式和改进例的具有上述构造的阵列基板101上形成的TFT Tr中,源极133可以具有U形或经旋转的U形,所以与其中源极和漏极以I形或经旋转的I形彼此相对的TFT相比,交叠的变化量可以更小。因此,交叠的变化量减小可能导致寄生电容的变化。
此外,与具有U形或经旋转的U形沟道的传统TFT(参照图3的UTr,其中,氧化物半导体层120被形成为覆盖U形源极133的相对端在其中彼此分开的整个区域,以形成U形或经旋转的U形沟道)不同,根据本发明的氧化物半导体层120可以形成为T形或经旋转的T形,以交叠源极133的相对端和漏极136的一端。因此,与具有U形沟道的传统TFT(参照图3的UTr)中相比,蚀刻阻止件125的面积可以减小得更多。结果,因为可以使TFT Tr的面积紧凑,所以TFT Tr在像素区P中占用的面积可以减小,从而提高孔径比。
此外,因为氧化物半导体层120没有设置在源极133的相对端在其中彼此隔开的整个区域上,所以可以不必在源极133的相对端在其中彼此隔开的整个区域上形成栅极105。因此,如图4中所示,可以从所述区域中的源极133的相对端在其中彼此分隔开并且没有形成氧化物半导体层120的部分中去除栅极105。
因此,因为源极133和栅极105之间的交叠区域可以相对减小,所以由于栅极105和源极133之间的交叠造成的寄生电容Cgs可以减小。
如上所述,在根据本发明的实施方式的阵列基板101中,由于栅极105和源极133之间的交叠面积缩小而造成的寄生电容Cgs的减小,可以提高位于每个像素区P中的像素电极150的充电特性。同时,可以减少由于回踢电压或馈通电压的变化ΔVp而造成的闪烁、垂直串扰和余像,从而增强分辨率特性。
同时,参照图3(图3示出根据相关技术的具有经旋转的U形沟道的氧化物半导体层91的形成),假设源极93和漏极94与本发明的实施方式或改进例具有相同的构造,当氧化物半导体层91被形成为覆盖源极93的相对两端在其中彼此分开的整个区域以在氧化物半导体层91中形成常规U形沟道或经旋转的U形沟道时,与根据本发明的实施方式或改进例的阵列基板101中相比,氧化物半导体层91的面积可能增大得更多。另外,因为被形成为与氧化物半导体层91交叠的蚀刻阻止件92的面积也自然地增大,所以考虑到工艺裕量,被形成为与露在蚀刻阻止件92外面的氧化物半导体层91接触的源极93和漏极94的面积应该增大。结果,可以看到,与根据本发明的实施方式和改进例的每个阵列基板(参照图4和图5的101)相比,TFT的面积增大得更多。
同时,参照图4和图5,根据可以包括具有上述构造的TFT的本发明的实施方式和改进例,像素电极150可以形成在每个阵列基板101上的每个像素区P中。像素电极150可以通过露出漏极136的漏接触孔143与漏极136接触。
在这种情况下,可通过在透明公共电极170和阵列基板101之间插入由绝缘材料形成的第二钝化层(未示出)来在在阵列基板101上进一步设置透明公共电极170。透明公共电极170可以包括与像素电极150对应的多个条形第一开口op1以及与TFTTr对应的第二开口op2。然而,根据LCD的驱动模式,可以省去具有多个第一开口op1和第二开口op2的公共电极170。
当除了像素电极150之外还设置具有多个第一开口op1和第二开口op2的公共电极170时,阵列基板101可以是用于边缘场切换(FFS)模式LCD的阵列基板101。当省去公共电极170并且只设置像素电极150时,阵列基板101可以是扭曲向列(TN)模式LCD的阵列基板(未示出)。当像素电极150包括在各个像素区P中彼此隔开预定距离的多个条形像素电极并且多个条形公共电极(未示出)与条形像素电极交替形成时,阵列基板101可以是用于面内切换模式LCD的阵列基板(未示出)。
同时,尽管图4和图5示出了公共电极170中包括的多个第一开口op1在每个像素区P中具有笔直的条形,但所述多个第一开口op1可以具有基于每个像素区P的中部对称弯曲的形状,使得在每个像素区P中可以形成不同的域区域(domain region)。
当通过沿着不同方向形成多个条形第一开口op1在每个像素区P中实现双域(double domain)时,在包括双域的LCD中可以抑制相对于视角的色度变化,从而提高显示质量。
下文中,将描述根据本发明的实施方式的具有上述构造的阵列基板101的剖面构造。
图6是沿着图4的VI-VI线截取的TFT的剖视图。为简便起见,每个像素区P中的将要形成TFT Tr的部分将被定义为开关区TrA。
选通线(未示出)可以形成在透明绝缘基板101上并且在第一方向上延伸。选通线可以由具有低电阻特性的金属材料形成,所述金属材料例如是选自铝(Al)、Al合金(例如,铝-钕(AlNd))、铜(Cu)、Cu合金、铬(Cr)和钼(Mo)的一种。栅极105可以连接到选通线并且形成在每个开关区TrA中。在这种情况下,栅极105可以从选通线分支。
另外,栅绝缘层110可以形成在基板101的整个表面上,覆盖选通线和栅极105。栅绝缘层110可以由诸如二氧化硅(SiO2)或氮化硅(SiNx)的无机绝缘材料形成。
此外,在开关区TrA中可以在栅绝缘层110上对应于栅极105形成氧化物半导体层120。氧化物半导体层120可以具有T平面形或经旋转的T平面形并且可以由基于锌氧化物(ZnO)的半导体材料(例如,铟镓锌氧化物(IGZO)、锌锡氧化物(ZTO)和锌铟氧化物(ZIO)中的任一种)形成。
具有岛形的蚀刻阻止件125可以设置在T形或经旋转的T形的氧化物半导体层120上,以露出T形或经旋转的T形的氧化物半导体层120的三个端部的上表面。蚀刻阻止件125可以由例如二氧化硅或氮化硅的无机绝缘材料形成。
数据线130可以形成在栅绝缘层115上并且在第二方向上延伸。数据线130可以与选通线(未示出)交叉,以限定像素区P。
另外,源极133和漏极136可以形成在蚀刻阻止件125上并且彼此隔开。源极133可以具有U形或经旋转的U形,并且漏极136可以具有条形。
在这种情况下,U形或经旋转的U形的源极133可以与T形或经旋转的T形的氧化物半导体层120的在蚀刻阻止件125外部露出并且位于一条直线上的两个端部的上表面的每一个接触,而条形的漏极136可以与T形或经旋转的T形的氧化物半导体层120的剩余一个端部的上表面接触。
同时,可以顺序地叠堆在开关区TrA上的栅极105、栅绝缘层110、T形或经旋转的T形的氧化物半导体层120、被构造成露出氧化物半导体层120的三个端部的蚀刻阻止件125以及分开形成的源极133和漏极136可以构成TFT Tr。在这种情况下,由于源极133和漏极136的平面结构特性,导致TFT Tr可以具有T形或经旋转的T形的沟道结构。
此外,第一钝化层140可以形成在基板101的整个基板上,以覆盖数据线130和TFT Tr。第一钝化层140可以由无机绝缘材料或有机绝缘材料形成。例如,无机绝缘材料可以选自二氧化硅或氮化硅,并且有机绝缘材料可以选自苯并环丁烯(BCB)或感光亚克力(photo-acryl)。在这种情况下,第一钝化层140可以具有露出TFT Tr的漏极136的第二区域136b的漏接触孔(参照图4中的143)。
另外,在每个像素区P中板型像素电极150可以形成在具有漏接触孔(参照图4中的143)的第一钝化层140上。板型像素电极150可以通过漏接触孔与漏极136接触。像素电极150可以由透明导电材料(例如,铟锡氧化物(ITO)或铟锌氧化物(IZO))形成。
根据本发明的实施方式的具有上述剖面构造的阵列基板可以构成TN模式LCD的阵列基板。
在用于FFS模式LCD的阵列基板101的情况下,如所示出的,可以使用无机绝缘材料或有机绝缘材料在基板101的整个表面上形成第二钝化层160,以覆盖像素电极150。可以使用透明导电材料在包括像素区P的显示区的整个表面上形成板型公共电极170,以覆盖第二钝化层160。
公共电极170可以包括与形成在每个像素区P中的开关区TrA对应的第二开口op2和与每个像素电极150对应的多个条形的第一开口op1。在这种情况下,多个条形的第一开口op1可以具有基于每个像素区P的中部对称弯曲的形状。
尽管图6示出在每个像素区P中三个条形的第一开口op1形成在公共电极170中并且以规则间隔彼此隔开,但可以在2至15的大范围内适当地选择与每个像素区P对应的第一开口op1的数量,以形成有效的边缘场。
尽管未示出,但当阵列基板101是用于面内切换模式LCD的阵列基板(未示出)时,公共线(未示出)可以形成为与选通线(未示出)在同一层且与选通线平行,。另外,可以在第一钝化层140上形成多个条形的像素电极(未示出)来替代板型像素电极150,并且多个条形的公共电极(未示出)可以形成为与多个条形的像素电极平行且隔开并且与多个条形的像素电极交替。
在这种情况下,多个条形的像素电极的一端可以都连接在每个像素区P中。多个条形的像素电极可以通过第一钝化层140中包括的漏接触孔(未示出)与漏极136接触。多个条形的公共电极的一端可以都连接在一起。多个条形的公共电极可以通过露出公共线的公共接触孔(未示出)与第一钝化层140的公共线接触。
根据本发明,TFT的沟道可以形成为T形或经旋转的T形,并且同时,从选通线分支的栅极可以被构造成减小栅极和漏极之间的交叠面积。结果,由于栅极和源/漏极之间的交叠造成的寄生电容Cgs可以减小,从而提高像素电极的充电特性。另外,可以抑制由于TFT的特性和寄生电容Cgs导致的垂直串扰和余像,从而提高图像质量。
对于本领域的技术人员将显而易见的是,在不脱离本发明的精神或范围的情况下,可以对本公开的显示装置进行各种修改和变形。因此,本发明旨在覆盖落入所附权利要求书及其等同物的范围内的本发明的修改和变型。
Claims (15)
1.一种阵列基板,所述阵列基板包括:
选通线,其位于包括像素区的基板上,所述选通线在一个方向上延伸;
栅极,其位于所述像素区中并且从所述选通线延伸;
栅绝缘层,其位于所述选通线和所述栅极上;
数据线,其位于所述栅绝缘层上并且与所述选通线交叉,以限定所述像素区;
氧化物半导体层,其位于所述栅绝缘层上并且具有三个端部,所述氧化物半导体层对应于所述栅极;
蚀刻阻止件,其位于所述氧化物半导体层上,以露出所述氧化物半导体层的所述三个端部;
源极,其与所述氧化物半导体层的所述三个端部中的两个端部接触,并且从所述数据线延伸;以及
漏极,其与所述氧化物半导体层的所述三个端部中的一个端部接触,并且与所述源极隔开。
2.根据权利要求1所述的阵列基板,其中,所述源极具有U形,并且所述漏极具有条形。
3.根据权利要求2所述的阵列基板,其中,所述漏极插入在所述源极的开口中。
4.根据权利要求1所述的阵列基板,其中,所述氧化物半导体层包括铟镓锌氧化物(IGZO)、锌锡氧化物(ZTO)和锌铟氧化物(ZIO)中的一种。
5.根据权利要求1所述的阵列基板,其中,在所述氧化物半导体层中形成的沟道具有T形。
6.根据权利要求1所述的阵列基板,所述阵列基板还包括:
第一钝化层,其位于所述数据线以及所述源极和所述漏极上,所述第一钝化层具有露出所述漏极的漏接触孔;以及
像素电极,其在所述像素区中位于所述第一钝化层上,并且通过所述漏接触孔与所述漏极接触。
7.根据权利要求6所述的阵列基板,所述阵列基板还包括:
第二钝化层,其位于所述像素电极上;以及
公共电极,其位于所述第二钝化层上并且具有与所述像素区对应的多个条形的第一开口。
8.根据权利要求7所述的阵列基板,其中,所述公共电极还包括与所述源极和所述漏极以及在所述源极和所述漏极之间露出的所述蚀刻阻止件对应的第二开口。
9.根据权利要求8所述的阵列基板,其中,所述多个条形的第一开口具有相对于每个像素区的中部对称弯曲的形状。
10.根据权利要求6所述的阵列基板,所述阵列基板还包括:
公共线,其设置为与所述选通线在同一层上并且平行于所述选通线;以及
公共电极,其位于所述第一钝化层上并且包括多个第一条形电极,
其中,所述像素电极包括与所述多个第一条形电极交替布置的多个第二条形电极,并且其中,所述第一钝化层包括露出所述公共线的公共接触孔,并且所述公共电极通过所述公共接触孔与所述公共线接触。
11.一种薄膜晶体管,所述薄膜晶体管包括:
栅极;
栅绝缘层,其位于所述栅极上;
氧化物半导体层,其位于所述栅绝缘层上并且具有三个端部,所述氧化物半导体层对应于所述栅极;
蚀刻阻止件,其位于所述氧化物半导体层上,以露出所述氧化物半导体层的所述三个端部;
源极,其与所述氧化物半导体层的所述三个端部中的两个端部接触并且从所述数据线延伸;以及
漏极,其与所述氧化物半导体层的所述三个端部中的一个端部接触并且与所述源极隔开。
12.根据权利要求11所述的薄膜晶体管,其中,所述源极具有U形,并且所述漏极具有条形。
13.根据权利要求12所述的薄膜晶体管,其中,所述漏极插入在所述源极的开口中。
14.根据权利要求11所述的薄膜晶体管,其中,所述氧化物半导体层包括铟镓锌氧化物(IGZO)、锌锡氧化物(ZTO)和锌铟氧化物(ZIO)中的一种。
15.根据权利要求11所述的薄膜晶体管,其中,在所述氧化物半导体层中形成的沟道具有T形。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110129432A KR101951296B1 (ko) | 2011-12-06 | 2011-12-06 | 산화물 반도체층을 갖는 박막트랜지스터 및 이를 구비한 어레이 기판 |
KR10-2011-0129432 | 2011-12-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103151358A true CN103151358A (zh) | 2013-06-12 |
CN103151358B CN103151358B (zh) | 2016-03-02 |
Family
ID=48523360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210512877.XA Active CN103151358B (zh) | 2011-12-06 | 2012-12-04 | 薄膜晶体管和包括薄膜晶体管的阵列基板 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8754410B2 (zh) |
KR (1) | KR101951296B1 (zh) |
CN (1) | CN103151358B (zh) |
TW (1) | TWI481035B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103715265A (zh) * | 2013-12-23 | 2014-04-09 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板和显示装置 |
CN104022157A (zh) * | 2014-05-26 | 2014-09-03 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板及显示装置 |
CN106935216A (zh) * | 2015-12-30 | 2017-07-07 | 乐金显示有限公司 | 选通驱动单元和包括该选通驱动单元的液晶显示装置 |
CN110379849A (zh) * | 2019-07-22 | 2019-10-25 | 深圳市华星光电半导体显示技术有限公司 | 一种薄膜晶体管及显示面板 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015052991A1 (ja) * | 2013-10-09 | 2015-04-16 | シャープ株式会社 | 半導体装置およびその製造方法 |
CN103915452B (zh) * | 2014-03-28 | 2016-04-06 | 京东方科技集团股份有限公司 | 一种阵列基板、其制作方法及显示装置 |
CN203983289U (zh) * | 2014-06-17 | 2014-12-03 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及显示装置 |
CN107863297A (zh) | 2016-09-22 | 2018-03-30 | 中华映管股份有限公司 | 薄膜晶体管及其制造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1497311A (zh) * | 2002-10-04 | 2004-05-19 | Lg.������Lcd��ʽ���� | 液晶显示装置的阵列基板及其制造方法 |
KR20040061375A (ko) * | 2002-12-30 | 2004-07-07 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판에 형성되는 박막트랜지스터와그 제조방법 |
US6818915B1 (en) * | 1998-03-23 | 2004-11-16 | Matsushita Electric Industrial Co., Ltd. | Field-emission electron source |
KR100488933B1 (ko) * | 1997-12-22 | 2005-08-31 | 비오이 하이디스 테크놀로지 주식회사 | 액정표시소자및그의제조방법 |
KR20080002186A (ko) * | 2006-06-30 | 2008-01-04 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이 기판 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101480004B1 (ko) * | 2008-02-21 | 2015-01-08 | 삼성디스플레이 주식회사 | 표시판 및 그 제조 방법 |
KR101517034B1 (ko) * | 2008-12-04 | 2015-05-04 | 엘지디스플레이 주식회사 | 반사투과형 액정표시장치용 어레이 기판 |
KR101636998B1 (ko) * | 2010-02-12 | 2016-07-08 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그 제조 방법 |
KR20110139829A (ko) * | 2010-06-24 | 2011-12-30 | 엘지디스플레이 주식회사 | 광시야각 액정표시장치용 어레이 기판 및 이의 제조 방법 |
KR101844953B1 (ko) * | 2011-03-02 | 2018-04-04 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
-
2011
- 2011-12-06 KR KR1020110129432A patent/KR101951296B1/ko active IP Right Grant
-
2012
- 2012-11-27 TW TW101144373A patent/TWI481035B/zh not_active IP Right Cessation
- 2012-12-04 CN CN201210512877.XA patent/CN103151358B/zh active Active
- 2012-12-06 US US13/706,730 patent/US8754410B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100488933B1 (ko) * | 1997-12-22 | 2005-08-31 | 비오이 하이디스 테크놀로지 주식회사 | 액정표시소자및그의제조방법 |
US6818915B1 (en) * | 1998-03-23 | 2004-11-16 | Matsushita Electric Industrial Co., Ltd. | Field-emission electron source |
CN1497311A (zh) * | 2002-10-04 | 2004-05-19 | Lg.������Lcd��ʽ���� | 液晶显示装置的阵列基板及其制造方法 |
KR20040061375A (ko) * | 2002-12-30 | 2004-07-07 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판에 형성되는 박막트랜지스터와그 제조방법 |
KR20080002186A (ko) * | 2006-06-30 | 2008-01-04 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이 기판 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103715265A (zh) * | 2013-12-23 | 2014-04-09 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板和显示装置 |
CN103715265B (zh) * | 2013-12-23 | 2016-06-01 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板和显示装置 |
US9423662B2 (en) | 2013-12-23 | 2016-08-23 | Boe Technology Group Co., Ltd. | Thin film transistor, array substrate and display device |
CN104022157A (zh) * | 2014-05-26 | 2014-09-03 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板及显示装置 |
WO2015180376A1 (zh) * | 2014-05-26 | 2015-12-03 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及显示装置 |
CN106935216A (zh) * | 2015-12-30 | 2017-07-07 | 乐金显示有限公司 | 选通驱动单元和包括该选通驱动单元的液晶显示装置 |
US10466556B2 (en) | 2015-12-30 | 2019-11-05 | Lg Display Co., Ltd. | Gate driving unit and liquid crystal display device including the same |
CN110379849A (zh) * | 2019-07-22 | 2019-10-25 | 深圳市华星光电半导体显示技术有限公司 | 一种薄膜晶体管及显示面板 |
Also Published As
Publication number | Publication date |
---|---|
KR101951296B1 (ko) | 2019-04-26 |
TW201327830A (zh) | 2013-07-01 |
CN103151358B (zh) | 2016-03-02 |
KR20130063102A (ko) | 2013-06-14 |
TWI481035B (zh) | 2015-04-11 |
US20130140556A1 (en) | 2013-06-06 |
US8754410B2 (en) | 2014-06-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103151358B (zh) | 薄膜晶体管和包括薄膜晶体管的阵列基板 | |
US10861879B2 (en) | Display device | |
US11843002B2 (en) | Transistor structure, display device including transistor structure, and method of manufacturing transistor structure | |
CN101726947B (zh) | 用于液晶显示器件的阵列基板、其制造方法、以及具有其的液晶显示器件 | |
CN102636927B (zh) | 阵列基板及其制造方法 | |
US8895985B2 (en) | Array substrate for liquid crystal display and method for manufacturing the same | |
US7623194B2 (en) | Pixel structure and liquid crystal display and method for manufacturing the same | |
US9496284B2 (en) | Display panel and display apparatus including the same | |
US10204930B2 (en) | Ultra high density thin film transistor substrate having low line resistance structure and method for manufacturing the same | |
US20120112181A1 (en) | Oxide semiconductor, thin film transistor including the same and thin film transistor display panel including the same | |
JP2006310636A (ja) | 薄膜トランジスタ | |
CN110676253B (zh) | 一种静电释放电路、阵列基板、显示面板及显示装置 | |
US10381384B2 (en) | Array substrate, method for manufacturing array substrate, display panel and display device | |
US10522567B2 (en) | Semiconductor device and display device having a protection layer | |
KR20020057050A (ko) | 액정표시장치 및 그 제조방법 | |
KR102473303B1 (ko) | 표시 장치 | |
CN111146212B (zh) | 半导体基板 | |
KR101948167B1 (ko) | 액정표시장치용 어레이 기판 | |
US20130106679A1 (en) | Lcd panel and method of manufacturing the same | |
CN107316876A (zh) | 像素阵列基板 | |
CN104460143A (zh) | 像素结构及其制造方法 | |
US20230420462A1 (en) | Array substrate, preparation method thereof, display panel and display device | |
CN202306078U (zh) | 液晶显示面板 | |
US20090321742A1 (en) | Thin film transistor | |
CN115483249A (zh) | 一种显示基板及其制作方法、显示面板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |