CN103137852B - 存储元件和存储设备 - Google Patents

存储元件和存储设备 Download PDF

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Publication number
CN103137852B
CN103137852B CN201210484675.9A CN201210484675A CN103137852B CN 103137852 B CN103137852 B CN 103137852B CN 201210484675 A CN201210484675 A CN 201210484675A CN 103137852 B CN103137852 B CN 103137852B
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CN
China
Prior art keywords
layer
magnetization
film
ferromagnetic layer
ferromagnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201210484675.9A
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English (en)
Chinese (zh)
Other versions
CN103137852A (zh
Inventor
肥后丰
细见政功
大森广之
别所和宏
浅山徹哉
山根阳
山根一阳
内田裕行
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Sony Corp
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Sony Corp
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Publication date
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Publication of CN103137852A publication Critical patent/CN103137852A/zh
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Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
  • Measuring Magnetic Variables (AREA)
CN201210484675.9A 2011-11-30 2012-11-23 存储元件和存储设备 Expired - Fee Related CN103137852B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-261522 2011-11-30
JP2011261522A JP5982795B2 (ja) 2011-11-30 2011-11-30 記憶素子、記憶装置

Publications (2)

Publication Number Publication Date
CN103137852A CN103137852A (zh) 2013-06-05
CN103137852B true CN103137852B (zh) 2017-03-01

Family

ID=48466054

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210484675.9A Expired - Fee Related CN103137852B (zh) 2011-11-30 2012-11-23 存储元件和存储设备

Country Status (3)

Country Link
US (3) US8809978B2 (enExample)
JP (1) JP5982795B2 (enExample)
CN (1) CN103137852B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5987302B2 (ja) 2011-11-30 2016-09-07 ソニー株式会社 記憶素子、記憶装置
KR102114285B1 (ko) * 2013-04-09 2020-05-22 에스케이하이닉스 주식회사 반도체 장치 및 이 반도체 장치를 포함하는 마이크로프로세서, 프로세서, 시스템, 데이터 저장 시스템 및 메모리 시스템
JP6122353B2 (ja) 2013-06-25 2017-04-26 ルネサスエレクトロニクス株式会社 半導体パッケージ
CN105552215A (zh) * 2015-12-03 2016-05-04 中电海康集团有限公司 一种磁阻式随机存储器的位元制造方法
CN105551516A (zh) * 2015-12-15 2016-05-04 中电海康集团有限公司 一种基于stt-mram构建的存储器
JP6968398B2 (ja) * 2017-02-14 2021-11-17 国立研究開発法人産業技術総合研究所 磁気抵抗素子
US10593388B2 (en) * 2017-02-27 2020-03-17 Tdk Corporation Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory
CN110838489A (zh) * 2018-08-17 2020-02-25 湖北华磁电子科技有限公司 一种具有多个磁化方向的磁存储元件和存储装置
JP7206835B2 (ja) * 2018-11-19 2023-01-18 日産自動車株式会社 磁気回路

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CN1630921A (zh) * 2001-11-12 2005-06-22 因芬尼昂技术股份公司 数字磁存储单元装置交换耦合层系统之均质磁化方法
EP2182532A1 (en) * 2008-10-30 2010-05-05 Korea Institute Of Science And Technology Magnetic tunnel junction structure having free layer with oblique magnetization

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KR100373473B1 (ko) * 1999-09-24 2003-02-25 가부시끼가이샤 도시바 자기 저항 효과 소자, 자기 저항 효과 헤드, 자기 재생장치 및 자성 적층체
JP2002092829A (ja) * 2000-09-21 2002-03-29 Fujitsu Ltd 磁気抵抗センサ及び磁気抵抗ヘッド
US6473279B2 (en) * 2001-01-04 2002-10-29 International Business Machines Corporation In-stack single-domain stabilization of free layers for CIP and CPP spin-valve or tunnel-valve read heads
US6721144B2 (en) * 2001-01-04 2004-04-13 International Business Machines Corporation Spin valves with co-ferrite pinning layer
US6600184B1 (en) * 2002-03-25 2003-07-29 International Business Machines Corporation System and method for improving magnetic tunnel junction sensor magnetoresistance
JP4400037B2 (ja) * 2002-10-31 2010-01-20 日本電気株式会社 磁気ランダムアクセスメモリ，及びその製造方法
JP4371781B2 (ja) 2002-11-26 2009-11-25 株式会社東芝 磁気セル及び磁気メモリ
US7911832B2 (en) * 2003-08-19 2011-03-22 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US6992910B1 (en) * 2004-11-18 2006-01-31 Maglabs, Inc. Magnetic random access memory with three or more stacked toggle memory cells and method for writing a selected cell
US6937497B1 (en) * 2004-11-18 2005-08-30 Maglabs, Inc. Magnetic random access memory with stacked toggle memory cells
US7133309B2 (en) * 2005-01-10 2006-11-07 International Business Machines Corporation Method and structure for generating offset fields for use in MRAM devices
US7180113B2 (en) * 2005-02-10 2007-02-20 Infineon Technologies Ag Double-decker MRAM cell with rotated reference layer magnetizations
JP2007266498A (ja) * 2006-03-29 2007-10-11 Toshiba Corp 磁気記録素子及び磁気メモリ
US8058697B2 (en) * 2007-03-26 2011-11-15 Magic Technologies, Inc. Spin transfer MRAM device with novel magnetic synthetic free layer
JP2009081215A (ja) 2007-09-25 2009-04-16 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
WO2009104427A1 (ja) * 2008-02-19 2009-08-27 日本電気株式会社 磁気ランダムアクセスメモリ
JP2010034153A (ja) * 2008-07-25 2010-02-12 Toshiba Corp 磁気ランダムアクセスメモリおよびその書き込み方法
US8406041B2 (en) * 2009-07-08 2013-03-26 Alexander Mikhailovich Shukh Scalable magnetic memory cell with reduced write current
JP5529648B2 (ja) * 2009-08-04 2014-06-25 キヤノンアネルバ株式会社 磁気センサ積層体、その成膜方法、成膜制御プログラムおよび記録媒体
US8331141B2 (en) * 2009-08-05 2012-12-11 Alexander Mikhailovich Shukh Multibit cell of magnetic random access memory with perpendicular magnetization
US9450177B2 (en) * 2010-03-10 2016-09-20 Tohoku University Magnetoresistive element and magnetic memory
JP5235964B2 (ja) * 2010-09-30 2013-07-10 株式会社東芝 歪検知素子、歪検知素子装置、および血圧センサ
US8399941B2 (en) * 2010-11-05 2013-03-19 Grandis, Inc. Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements
US8766383B2 (en) * 2011-07-07 2014-07-01 Samsung Electronics Co., Ltd. Method and system for providing a magnetic junction using half metallic ferromagnets
US8816456B2 (en) * 2011-12-21 2014-08-26 Agency For Science, Technology And Research Magnetoresistive device and a method of forming the same
US9036407B2 (en) * 2012-12-07 2015-05-19 The Regents Of The University Of California Voltage-controlled magnetic memory element with canted magnetization

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
CN1630921A (zh) * 2001-11-12 2005-06-22 因芬尼昂技术股份公司 数字磁存储单元装置交换耦合层系统之均质磁化方法
EP2182532A1 (en) * 2008-10-30 2010-05-05 Korea Institute Of Science And Technology Magnetic tunnel junction structure having free layer with oblique magnetization

Also Published As

Publication number Publication date
US20160225980A1 (en) 2016-08-04
CN103137852A (zh) 2013-06-05
JP5982795B2 (ja) 2016-08-31
US9331270B2 (en) 2016-05-03
US9484528B2 (en) 2016-11-01
US20130134532A1 (en) 2013-05-30
JP2013115301A (ja) 2013-06-10
US20140319633A1 (en) 2014-10-30
US8809978B2 (en) 2014-08-19

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Granted publication date: 20170301