CN103107275B - Device for light emitting diode (LED) heat conduction and dissipation and insulation and voltage resistance - Google Patents
Device for light emitting diode (LED) heat conduction and dissipation and insulation and voltage resistance Download PDFInfo
- Publication number
- CN103107275B CN103107275B CN201110354239.5A CN201110354239A CN103107275B CN 103107275 B CN103107275 B CN 103107275B CN 201110354239 A CN201110354239 A CN 201110354239A CN 103107275 B CN103107275 B CN 103107275B
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- China
- Prior art keywords
- led
- heat
- dielectric voltage
- voltage withstand
- withstand
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009413 insulation Methods 0.000 title claims abstract description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 30
- 239000004411 aluminium Substances 0.000 claims description 23
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- 230000005855 radiation Effects 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000000919 ceramic Substances 0.000 claims description 16
- 239000011889 copper foil Substances 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 239000007921 spray Substances 0.000 claims description 10
- 238000003475 lamination Methods 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 102100037149 3-oxoacyl-[acyl-carrier-protein] synthase, mitochondrial Human genes 0.000 claims description 3
- 101100257134 Caenorhabditis elegans sma-4 gene Proteins 0.000 claims description 3
- 101001098439 Homo sapiens 3-oxoacyl-[acyl-carrier-protein] synthase, mitochondrial Proteins 0.000 claims description 3
- 239000004568 cement Substances 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 2
- 150000001398 aluminium Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Abstract
The invention discloses a device for light emitting diode (LED) heat conduction and dissipation, insulation and voltage resistance and relates to the field of LED application. The device comprises a hollow structure capable of enabling LED grains and a heat dissipation layer to conduct direct heat transmission and an insulation and voltage resistance structure arranged at one side, far away from the LED grains, of the heat dissipation layer in an overlaying mode. Compared with the prior art, using requirements can be satisfied on heat dissipation performance and voltage-resistant performance so that the device has the advantages that actual application value is high.
Description
Technical field
The present invention relates to LED application, relate to a kind of LED matrix taking into account heat conduction and heat radiation and dielectric voltage withstand in particular.
Background technology
Have the incomparable advantage of many conventional light source such as energy-saving and environmental protection, the life-span is long, toggle speed is fast based on LED, it is just extensively promoted.Wherein high-capacity LED is one of following most important environmental protection light source, and its market demand is huge, and what such as application was at present wider is polycrystalline digit group type packaged light source.
As shown in Figure 1, it is the cutaway view of traditional LED conductive structure, its have from table and successively folded establish welding resisting layer 81, spray tin layers 82, copper foil layer 83, adhere to insulating barrier 84 and aluminium lamination 85, on this copper foil layer 83, etching has circuit, this LED grain 9 is directly connected with copper foil layer 83, this adhesion insulating barrier 84 1 aspect is used for copper foil layer 83 to stick to aluminium lamination 85, also copper foil layer 83 and aluminium lamination 85 is avoided to electrically conduct on the other hand, namely effect of insulation is reached, this aluminium lamination then mainly plays the effect improving radiating effect, is heat dissipating layer.Above-mentioned traditional LED conductive structure can meet the application of low-power LED, but then often there is the not good problem of radiating effect when in the face of high-capacity LED, thus affects the factors such as its life-span and luminous flux.
In view of this, the present inventor, for the above-mentioned defect further investigation of prior art when encapsulating LED, has this case to produce then.
Summary of the invention
The object of the present invention is to provide a kind of LED to take into account the device of heat conduction and heat radiation and dielectric voltage withstand, the problem of thermal diffusivity and insulation resistance cannot be taken into account to solve LED pedestal in prior art.
In order to reach above-mentioned purpose, solution of the present invention is:
LED takes into account a device for heat conduction and heat radiation and dielectric voltage withstand, wherein, comprises and allows the engraved structure of LED grain and the direct heat trnasfer of heat dissipating layer and folded be located at the dielectric voltage withstand structure of heat dissipating layer away from LED grain side.
Further, this engraved structure is be formed in the through hole on welding resisting layer, copper foil layer and adhesion insulating barrier, and this LED grain is by being directly connected with heat dissipating layer.
Further, this adhesion insulating barrier is selected from FR4, CEM1, CEM3 or insulating cement.
Further, the heat dissipation bonding pad of this LED grain is connected with heat dissipating layer by spray tin layers.
Further, this heat dissipating layer is through the aluminium lamination of nickel plating or spray tin process, layers of copper or temperature-uniforming plate.
Further, this dielectric voltage withstand structure is that surface forms nano ceramics insulation plated film through plated film or surface forms the aluminium sheet of diaphragm, copper coin or temperature-uniforming plate through anode process.
Further; thickness=LED base withstand voltage/basic withstand voltage * unit thickness the value of nano ceramics insulation plated film or diaphragm in this dielectric voltage withstand structure, the thickness of this unit thickness value nano ceramics insulation plated film or diaphragm corresponding to a basic withstand voltage recording in advance.
Further; this dielectric voltage withstand structure has at least one block of basic plate; this basic plate is that surface forms nano ceramics insulation plated film through plated film or surface forms the aluminium sheet of diaphragm, copper coin or temperature-uniforming plate through anode process, and the nano ceramics insulation plated film or the diaphragm that are positioned at the upper and lower both sides of aluminium sheet, copper coin or temperature-uniforming plate are concordant with the end of aluminium sheet, copper coin or temperature-uniforming plate.
After adopting said structure, a kind of LED that the present invention relates to takes into account the device of heat conduction and heat radiation and dielectric voltage withstand, thus allows LED grain directly and between heat dissipating layer carry out heat trnasfer, so greatly can improve heat conduction and the heat dispersion of whole LED; The device simultaneously taking into account heat conduction and heat radiation and dielectric voltage withstand due to this LED also has dielectric voltage withstand structure, withstand voltage condition required when whole device can be allowed to meet use by this dielectric voltage withstand structure.Thus, compared with prior art, the present invention can meet user demand at heat dispersion and withstand voltage properties simultaneously, thus has the high feature of actual application value.
Accompanying drawing explanation
Fig. 1 is the cutaway view of traditional LED conductive structure;
Fig. 2 the present invention relates to a kind of LED to take into account the cutaway view playing heat conduction and heat radiation agency part in the device of heat conduction and heat radiation and dielectric voltage withstand;
Fig. 3 the present invention relates to a kind of LED to take into account the cutaway view playing dielectric voltage withstand agency part first embodiment in the device of heat conduction and heat radiation and dielectric voltage withstand;
Fig. 4 the present invention relates to a kind of LED to take into account the cutaway view playing dielectric voltage withstand agency part second embodiment in the device of heat conduction and heat radiation and dielectric voltage withstand;
Fig. 5 is the cutaway view after Fig. 2 and Fig. 4 combines;
Fig. 6 for structure shown in Fig. 2 with 4 layers of Fig. 4 be combined after cutaway view;
Fig. 7 for structure shown in Fig. 2 with 11 layers of Fig. 4 be combined after cutaway view;
Fig. 8 is the heat radiation schematic diagram that the present invention relates to structure.
In figure:
Welding resisting layer 1 sprays tin layers 2
Copper foil layer 3 adheres to insulating barrier 4
The aluminium lamination of nickel plating or spray tin process, layers of copper or temperature-uniforming plate 5
Aluminium sheet, copper coin or temperature-uniforming plate 6
Nano ceramics insulation plated film or diaphragm 61
Basic plate 7 welding resisting layer 81
Spray tin layers 82 copper foil layer 83
Adhere to insulating barrier 84 aluminium lamination 85
LED grain 9 heat dissipation bonding pad 91.
Embodiment
In order to explain technical scheme of the present invention further, below by specific embodiment, the present invention will be described in detail.
As shown in Figures 2 to 7, a kind of LED that the present invention relates to takes into account the device of heat conduction and heat radiation and dielectric voltage withstand, this device comprises engraved structure and dielectric voltage withstand structure, this engraved structure is by LED grain 9 and the direct heat trnasfer of heat dissipating layer, this dielectric voltage withstand structure is then folded is located at heat dissipating layer away from LED grain 9 side, and specifically this dielectric voltage withstand structure can directly adopt the fixed form of screw and be fixed on heat dissipating layer.For this heat dissipating layer, when specific implementation, then can be through the aluminium lamination of nickel plating or spray tin process, layers of copper or temperature-uniforming plate 5; This adhesion insulating barrier 4 can be selected from FR4, CEM1, CEM3 or insulating cement.
In the present embodiment, this engraved structure is the through hole being formed in welding resisting layer 1, copper foil layer 3 and adhering on insulating barrier 4, and this LED grain 9 is by being directly connected with heat dissipating layer; The heat dissipation bonding pad 91 of this LED grain 9 concrete is connected with heat dissipating layer by spray tin layers 2, and the both positive and negative polarity of this LED grain 9 is all connected with copper foil layer 3 by spray tin layers 2 certainly.
For this dielectric voltage withstand structure; it can adopt the structure shown in Fig. 3 or Fig. 4; for structure shown in Fig. 3; its for plated film is carried out to the surface of aluminium sheet, copper coin or temperature-uniforming plate 6 and formed nano ceramics insulation plated film 61; or form diaphragm 61 for carrying out anode process to the surface of aluminium sheet, copper coin or temperature-uniforming plate 6, and the structure obtained.Wherein, when adopting structure shown in Fig. 3; thickness=LED base withstand voltage/basic withstand voltage * unit thickness the value of nano ceramics insulation plated film or diaphragm 61 in this dielectric voltage withstand structure, the thickness of this unit thickness value nano ceramics insulation plated film or diaphragm 61 corresponding to a basic withstand voltage recording in advance.
For the structure shown in Fig. 4, it can as of this dielectric voltage withstand structure block basic plate 7, namely this dielectric voltage withstand structure can according to current withstand voltage demand the basic plate 7 of optionally stacked different masses number, the structure that itself and Fig. 2 combine is as shown in Fig. 5, Fig. 6 and Fig. 7, and it optionally can meet UL certification or VDE certification.
Namely this dielectric voltage withstand structure has at least one block of basic plate 7; this basic plate 7 is that surface forms nano ceramics insulation plated film 61 through plated film or surface forms the aluminium sheet of diaphragm 61, copper coin or temperature-uniforming plate 6 through anode process; wherein, be positioned at aluminium sheet, copper coin or temperature-uniforming plate about 6 both sides nano ceramics insulation plated film or diaphragm 61 concordant with the end of aluminium sheet, copper coin or temperature-uniforming plate 6.It should be noted that, the structure shown in Fig. 4 the mode of the radium-shine cutting of mode as shown in Figure 3 or punching press to obtain.
Like this, a kind of LED that the present invention relates to takes into account the device of heat conduction and heat radiation and dielectric voltage withstand, thus allows LED grain 9 directly and between heat dissipating layer carry out heat trnasfer, so greatly can improve heat conduction and the heat dispersion of whole LED; The device simultaneously taking into account heat conduction and heat radiation and dielectric voltage withstand due to this LED also has dielectric voltage withstand structure, withstand voltage condition required when whole device can be allowed to meet use by this dielectric voltage withstand structure.Thus, compared with prior art, the present invention can meet user demand at heat dispersion and withstand voltage properties simultaneously, thus has the high feature of actual application value.
Above-described embodiment and graphic and non-limiting product form of the present invention and style, any person of an ordinary skill in the technical field, to its suitable change done or modification, all should be considered as not departing from patent category of the present invention.
Claims (6)
1. a LED takes into account the device of heat conduction and heat radiation and dielectric voltage withstand, it is characterized in that, comprise welding resisting layer, copper foil layer, adhesion insulating barrier, heat dissipating layer, allow the engraved structure of LED grain and the direct heat trnasfer of heat dissipating layer and folded be located at the dielectric voltage withstand structure of heat dissipating layer away from LED grain side, this engraved structure is be formed in the through hole on welding resisting layer, copper foil layer and adhesion insulating barrier, and this LED grain is directly connected with heat dissipating layer by through hole.
2. a kind of LED as claimed in claim 1 takes into account the device of heat conduction and heat radiation and dielectric voltage withstand, it is characterized in that, this adhesion insulating barrier is selected from FR4, CEM1, CEM3 or insulating cement.
3. a kind of LED as described in claim 1 or 2 takes into account the device of heat conduction and heat radiation and dielectric voltage withstand, it is characterized in that, this heat dissipating layer is through the aluminium lamination of nickel plating or spray tin process, layers of copper or temperature-uniforming plate.
4. a kind of LED as claimed in claim 1 takes into account the device of heat conduction and heat radiation and dielectric voltage withstand; it is characterized in that, this dielectric voltage withstand structure is that surface forms nano ceramics insulation plated film through plated film or surface forms the aluminium sheet of diaphragm, copper coin or temperature-uniforming plate through anode process.
5. a kind of LED as claimed in claim 4 takes into account the device of heat conduction and heat radiation and dielectric voltage withstand; it is characterized in that; thickness=LED base withstand voltage/basic withstand voltage * unit thickness the value of nano ceramics insulation plated film or diaphragm in this dielectric voltage withstand structure, the thickness of this unit thickness value nano ceramics insulation plated film or diaphragm corresponding to a basic withstand voltage recording in advance.
6. a kind of LED as claimed in claim 1 takes into account the device of heat conduction and heat radiation and dielectric voltage withstand; it is characterized in that; this dielectric voltage withstand structure has at least one block of basic plate; to be surface form nano ceramics plated film or surface through plated film to this basic plate forms the aluminium sheet of diaphragm, copper coin or temperature-uniforming plate through anode process, and the nano ceramics insulation plated film or the diaphragm that are positioned at the upper and lower both sides of aluminium sheet, copper coin or temperature-uniforming plate are concordant with the end of aluminium sheet, copper coin or temperature-uniforming plate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110354239.5A CN103107275B (en) | 2011-11-10 | 2011-11-10 | Device for light emitting diode (LED) heat conduction and dissipation and insulation and voltage resistance |
| PCT/CN2012/084149 WO2013067914A1 (en) | 2011-11-10 | 2012-11-06 | Led apparatus giving consideration to both thermal conductivity/heat dissipation and dielectric strength |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110354239.5A CN103107275B (en) | 2011-11-10 | 2011-11-10 | Device for light emitting diode (LED) heat conduction and dissipation and insulation and voltage resistance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103107275A CN103107275A (en) | 2013-05-15 |
| CN103107275B true CN103107275B (en) | 2015-07-15 |
Family
ID=48288525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110354239.5A Expired - Fee Related CN103107275B (en) | 2011-11-10 | 2011-11-10 | Device for light emitting diode (LED) heat conduction and dissipation and insulation and voltage resistance |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103107275B (en) |
| WO (1) | WO2013067914A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325744B (en) * | 2013-06-27 | 2016-02-03 | 乐健科技（珠海）有限公司 | A kind of LED light source module with high withstand voltage performance |
| CN104197210A (en) * | 2014-08-22 | 2014-12-10 | 江苏日月照明电器有限公司 | LED low-voltage device capable of passing European ERP6000H authentication and forming method |
| CN107806604A (en) * | 2017-10-28 | 2018-03-16 | 厦门吉来特光电有限公司 | A kind of LED lamp |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101079461A (en) * | 2006-05-23 | 2007-11-28 | 台达电子工业股份有限公司 | Lighting device |
| CN101185174A (en) * | 2005-05-31 | 2008-05-21 | 昭和电工株式会社 | Substrate for LED and LED package |
| CN201430164Y (en) * | 2009-06-25 | 2010-03-24 | 福建中科万邦光电股份有限公司 | High-power LED packaging base |
| CN101709858A (en) * | 2009-09-27 | 2010-05-19 | 广州南科集成电子有限公司 | LED lighting high-efficiency heat-radiating aluminum baseplate, LED light source and making methods thereof |
| CN201570512U (en) * | 2009-09-15 | 2010-09-01 | 深圳市劲升迪龙科技发展有限公司 | High-power LED graphite packaging basal plate |
| CN202308070U (en) * | 2011-11-10 | 2012-07-04 | 格瑞电子（厦门）有限公司 | Light-emitting diode (LED) device with heat conductivity, heat dissipation, insulation and pressure resistance |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070126020A1 (en) * | 2005-12-03 | 2007-06-07 | Cheng Lin | High-power LED chip packaging structure and fabrication method thereof |
| KR100985917B1 (en) * | 2008-04-25 | 2010-10-08 | 주식회사 이츠웰 | Lead Frame and Electronic Device of Effective Thermal Emission Structure for Very Large Current Optical Source Lamp and Manufacturing Method Thereof |
| CN101465399B (en) * | 2008-12-30 | 2010-06-02 | 吉林大学 | LED chip base using diamond film as heat sink material and preparation method |
| CN101814574A (en) * | 2010-04-16 | 2010-08-25 | 惠州市华阳多媒体电子有限公司 | Light emitting diode base plate heat radiation structure and manufacture method thereof |
| CN101975343A (en) * | 2010-10-07 | 2011-02-16 | 东莞市万丰纳米材料有限公司 | Light source module and preparation method thereof |
-
2011
- 2011-11-10 CN CN201110354239.5A patent/CN103107275B/en not_active Expired - Fee Related
-
2012
- 2012-11-06 WO PCT/CN2012/084149 patent/WO2013067914A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101185174A (en) * | 2005-05-31 | 2008-05-21 | 昭和电工株式会社 | Substrate for LED and LED package |
| CN101079461A (en) * | 2006-05-23 | 2007-11-28 | 台达电子工业股份有限公司 | Lighting device |
| CN201430164Y (en) * | 2009-06-25 | 2010-03-24 | 福建中科万邦光电股份有限公司 | High-power LED packaging base |
| CN201570512U (en) * | 2009-09-15 | 2010-09-01 | 深圳市劲升迪龙科技发展有限公司 | High-power LED graphite packaging basal plate |
| CN101709858A (en) * | 2009-09-27 | 2010-05-19 | 广州南科集成电子有限公司 | LED lighting high-efficiency heat-radiating aluminum baseplate, LED light source and making methods thereof |
| CN202308070U (en) * | 2011-11-10 | 2012-07-04 | 格瑞电子（厦门）有限公司 | Light-emitting diode (LED) device with heat conductivity, heat dissipation, insulation and pressure resistance |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103107275A (en) | 2013-05-15 |
| WO2013067914A1 (en) | 2013-05-16 |
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Granted publication date: 20150715 |