KR100985917B1 - Lead Frame and Electronic Device of Effective Thermal Emission Structure for Very Large Current Optical Source Lamp and Manufacturing Method Thereof - Google Patents

Abstract

The present invention simplifies the structure of the lead frame for semiconductor electronic devices such as SMD-type LED lamps and the manufacturing process thereof to produce the lead frame at low cost, and the heat generated from the chip has the shortest heat dissipation path to effectively heat it. The present invention relates to a lead frame and a method of manufacturing the same, which can significantly improve the efficiency of a device with good heat resistance characteristics by emitting light and improving heat dissipation characteristics. An electronic device for an SMD type LED lamp or the like according to the present invention includes a lead frame in which a PCB having at least two electrode leads and at least one through hole is joined to at least a metal plate having a larger area than the at least one through hole. The chip may be mounted on the metal plate of the at least one through hole region.

LED, high power, heat dissipation, metal filling in the through hole of the electrode lead, chip molding on the upper metal plating of the metal plate junction through the cylindrical

Description

Lead frame and electronic device of effective thermal emission structure for very large current optical source lamp and manufacturing method thereof

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame for mounting a chip. In particular, a lead frame is manufactured at a low cost by simplifying a structure and a manufacturing process of a lead frame for a semiconductor electronic device such as an SMD-type LED lamp. The present invention relates to a lead frame and a method of manufacturing the same, in which heat has a shortest heat dissipation path, thereby effectively dissipating heat and improving heat dissipation characteristics, thereby greatly improving device efficiency with good heat resistance characteristics.

As light emitting diodes (LEDs) for displays of various electronic devices such as automobile dashboards, taillights, keyboards, traffic lights, etc., LEDs (Light Emitting Diodes) have recently been able to be driven at a large power of several W due to recent performance improvement. SMD (Surface Mount Device) type LED lamps using thin printed circuit boards (PCBs) simply form metallic electrode leads on both sides of the lead frame, which can be manufactured at a relatively low cost. The structure can be easily used, but when driving a large power, the thermal conduction path for heat dissipation is long, which degrades diode characteristics due to large thermal resistance.

Recently, LEDs having various types of PCBs have been developed to improve thermal characteristics, but there are limitations in obtaining thermal conductivity of several hundred W / mK by dispersing heat generated in small chips. In addition, LEDs have been continuously developed in the lead frame of materials having good thermal conductivity such as aluminum nitride (Aluminum Nitride), semiconductors, ceramics, etc. There is a problem of increased cost.

1 is a view for explaining the structure of a typical lead frame in which a light emitting diode chip is mounted on a PCB. 1, in a lead frame structure in which an electrode lead is formed along the side of a PCB with epoxy as an insulator to the rear side, a chip is attached on one electrode lead and molded with a transparent resin, When the chip is driven, heat generated from the chip is facilitated to dissipate heat through the electrode lead and the substrate formed along the side surface. However, when heat is generated about 40 degrees or more, the performance and efficiency of the chip are greatly reduced due to the thermal resistance.

In addition, although not shown in the drawings, various lead frame structures that facilitate heat dissipation have been developed. For example, the structure of Citizen, which has a chip mounted on an electrode lead formed up to the back side of the PCB, an aperture connecting the back metal layer and the front metal layer, and a plating formed thereon. Form the structure of this Illant (chip) to mount the chip, the metal slug and the structure of Lumirez (chip) to mount the chip on it, and form several through holes in the PCB on which AlN heat dissipation material is laminated. There are structures of Kyoritsu and Kyocera, which fill metals in a dispensing form and then mount chips thereon.

However, such a conventional lead frame structure does not sufficiently disperse heat generated in a chip or increases raw material costs. In other words, the conventional lead frame structure is poor in heat transfer path, conduction distance, structure, etc., and thus does not efficiently dissipate heat when driving a large power, poor heat resistance characteristics, deteriorates the performance and efficiency of the device, and eventually worsens the lifetime characteristics. There is a problem. In addition, when used at high power, the silicon molding around the light emitting diode chip or a resin material containing the same does not radiate or conduct heat properly, so that the chip is separated by a difference in thermal expansion coefficient and the like from the surrounding high temperature material. There is a problem that occurs.

In addition, in a lead frame structure that obtains high brightness by applying a large current to a small number of small chips, many packaging operations and raw materials have to be used, and thus the practicality is reduced due to an increase in manufacturing price, and molding operations using molds when molding after chip mounting are performed. This difficulty has a problem in that the productivity is poor and the production yield is also poor.

As described above, the conventional lead frame structure has a poor structure for dissipating heat generated when driving a large power, has a limitation in heat dissipation, and is difficult to generate demand for a huge display light emitting lamp market due to its complicated and expensive manufacturing. Because of the limitations, there is a need for a lead frame having an optimized structure and a heat dissipation chip that can quickly dissipate heat generated in a chip and is easy to manufacture.

Accordingly, the present invention is to solve the above-described problems, the object of the present invention, in the fabrication of semiconductor electronic devices such as SMD-type LED lamp, a structure that can emit heat inexpensively and effectively with a simple structure and manufacturing process To provide a lead frame.

In addition, another object of the present invention, the heat generated from the chip to be mounted has a shortest heat dissipation path to improve the heat dissipation characteristics, and thus a good heat resistance characteristics lead frame that can greatly improve the efficiency of the device To provide.

Another object of the present invention is to provide a structure in which a chip is bonded to a metal substrate and a chip is mounted on a metal layer on the PCB connected to the metal substrate through a through hole and molded to improve light utilization efficiency and light diffusion. An object of the present invention is to provide a lead frame capable of realizing advantageous characteristics such as improved performance of a power chip, improved production yield in manufacturing, solution to peeling problem, and lowered price.

First, to summarize the features of the present invention, an electronic device according to an aspect of the present invention for achieving the object of the present invention, a PCB formed with at least two electrode leads and at least one through hole and at least the A chip is mounted on the metal plate in the at least one through hole area by using a lead frame in which a metal plate having a larger area than at least one through hole is bonded. The electronic device includes an SMD type LED. The peripheral part of the chip may be molded with a transparent resin mixed with a predetermined fluorescent agent to improve light utilization efficiency or light diffusion.

According to another aspect of the present invention, a lead frame for mounting a chip includes a PCB formed with at least two electrode leads and at least one chip mounting through hole, and a metal plate having a larger area than at least the chip mounting through hole. The area of the chip mounting through hole is greater than at least the area of the chip to be mounted.

A metal coating layer may be included on the metal plate of the through hole region for chip mounting, and the chip may be mounted on the metal coating layer.

The metal plate includes a heat dissipation portion and two or more electrode portions electrically separated from the heat dissipation portion. The heat dissipation part may include a cross shape, and the electrode part may include a total of four around the heat dissipation part.

The PCB includes a through hole for electrical connection in a region of each of the two or more electrode leads, and each electrode lead is electrically connected to an electrode portion of the metal plate through the through hole for electrical connection. . Each electrode lead may be electrically connected to the electrode portion of the metal plate through a sequential process of first plating, metal filling, and second plating in the region including the through hole for electrical connection. The chip may be mounted on the metal plate of the through hole region for chip mounting on the metal coating layer through the first plating and the second plating.

The PCB includes a first metal layer of the same material as the electrode leads electrically separated from the electrode leads around the chip mounting through hole, and the first plating and the second order on the first metal layer. The metal coating layer may be formed through plating.

The electrode leads and the first metal layer may be filled with an insulator having a predetermined light reflectance.

The PCB is electrically separated from the electrode leads and the first metal layer and includes a second metal layer made of the same material as the electrode leads, wherein the second metal layer is patterned along each edge of left and right sides of the PCB. The first plating and the second plating may be electrically connected to the electrode portion of the metal plate along the side surface from the second metal layer.

According to another aspect of the present invention, a method of manufacturing a lead frame for mounting a chip includes: (A1) patterning two or more electrode leads on a PCB; (A2) machining at least one through hole for chip mounting in the patterned PCB; (A3) joining the PCB and the metal plate on which the at least two electrode leads and the chip mounting through hole are formed; And (A4) etching the metal plate to form a pattern having a larger area than at least the chip mounting through hole, wherein the area of the chip mounting through hole is at least larger than the area of the chip to be mounted.

Before the step (A1), the PCB may include a single-sided metal layer on the insulator or a double-sided metal layer interposed between the insulators.

Before the step (A3), (A5) comprises the step of processing the through-hole for the electrical connection in each of the two or more electrode leads, wherein step (A4), the heat radiation portion and the etching by the etching of the metal plate Forming at least two electrode portions electrically separated from the heat dissipating portion, and after the step (A4), (A6) the first plating, the metal filling, and the second secondary in the area including the electrical connection through hole. Electrically connecting each electrode lead to each electrode portion of the metal plate through a sequential process of plating, wherein the first plate and the second plate are formed on the metal plate of the through hole region for chip mounting. The chip may be mounted on the metal coating layer.

In the step (A1), the first metal layer of the same material as the electrode leads and the electrode leads and the first metal layer are electrically separated from the electrode leads around the chip mounting through hole. Forming a second metal layer of the same material as the electrode leads, and before the step (A6), (A7) by completely separating and etching the PCB and the metal plate joined before the first plating between the adjacent left and right lead frames Patterning a second metal layer along each edge of left and right sides of the PCB, wherein the second metal layer is formed through the first plating and the second plating along a side of the lead frame by the fully separated etching. May be electrically connected to the electrode portion of the metal plate.

After the step (A4), (A8) may include filling the insulator having a predetermined light reflectivity between the electrode leads and the first metal layer.

According to the lead frame of the structure according to the present invention, heat dissipation characteristics are greatly improved when driving a large power, compared to the conventional SMD-related LED lamp products, it is possible to improve the chip performance, light utilization efficiency and light diffusion significantly. have.

In addition, according to the lead frame of the structure according to the present invention, even in the case of producing a small amount compared to the method using the conventional dispensing method uniformity, yield, mass production, price reduction, large chip and multiple chip mounting, phosphor and diffuser production It is very advantageous in management. In particular, despite the high-power light source products, the raw material cost is reduced, which can greatly contribute to the practical use and activation of the huge lighting market, such as a display light emitting lamp.

And, according to the lead frame of the structure according to the present invention, compared to the case of using a conventional PCB, including Igilent (C) and Citizen (C), improve the bending problem of the PCB to improve the yield and effective heat dissipation The problem of peeling can be solved, and the manufacturing cost can be reduced according to the reduction of the price, and the light utilization efficiency and light diffusion can be greatly improved by the installation of the metal layer having the reflectance.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. Like reference numerals in the drawings denote like elements.

2 is a plan view for explaining the structure of a lead frame according to an embodiment of the present invention. 2, in the lead frame according to the exemplary embodiment of the present invention, the front PCB 10 and the rear metal plate 31 are basically bonded to each other. In FIG. 2, a detailed drawing is illustrated with respect to one lead frame in which three chips 90 may be mounted to fabricate an electronic device. However, in the drawing, several lead frames may be simultaneously manufactured in the same manner. In addition, the side of the region that is completely separated and etched left and right in the drawings may be manufactured at the same time by the same method repeatedly. Here, the lead frame according to an embodiment of the present invention will be described by taking an example in which a SMD type LED device can be manufactured by mounting a high power LED chip as the chip 90. However, the present invention is not limited thereto, and various semiconductor chips requiring effective heat dissipation, light utilization efficiency, light diffusion, and the like may be mounted at the location of the chip 90. Reference is now made to FIG. 3, which is a cross-sectional view of AA ′ shown in FIG. 2.

Two or more (for example, 4 as shown in FIG. 2) electrode leads 12 and at least one (for example, 3 as shown in FIG. 2) are penetrated in the PCB 10 on the front side. The hole 21 is formed, and the metal plate 31 of a larger area than the chip mounting through-hole 21 is joined to the back metal plate. In the case where a plurality of chips 90 are mounted, for example, three, for example, there are three through holes 21 for chip mounting, and the metal plate 31 is joined sufficiently wide to cover the whole. It is preferable to make the area of the chip mounting through-hole 21 at least larger than the area of the chip 90 to be mounted. Before joining the metal plate 31, the heat dissipation portion 33 of the metal plate 31 will be visible through the chip mounting through hole 21, but as described below, the heat dissipation portion of the chip mounting through hole 21 region. (33) The above includes a metal coating layer coated by a method such as primary plating, secondary plating, and the like, wherein a chip 90 such as an LED chip is mounted on the metal coating layer to fabricate an SMD type electronic device. Can be. In plan view, each of the electrode leads 12 includes a through hole 22 for electrical connection, and a through hole 22 for electrical connection is formed between the primary plating and the secondary plating. The electrode leads 12 may be electrically connected to the electrode portions 34 of the metal plate 31 by filling with metal.

As described below, in the top view as shown in FIG. 2, the periphery of the chip mounting through hole 21 is surrounded by a metal layer 13 patterned with a metal layer such as Cu formed when the PCB is made, which is the same material. And the other metal layers 14 of the same material electrically separated from the electrode leads 12 of the electrode leads 12 and the metal layers 13. Patterned along the edges. As described above, the first plating and the second plating may also be formed on the metal layers 13 and 14 and the electrode leads 12 to form plating metal layers thereon, which may reduce reflection efficiency when the LED chip 90 operates. Can be improved.

In addition, as shown in FIG. 3, after the chip 90 is mounted, the peripheral part of the chip 90 is molded with an adhesive transparent resin 80 such as a silicone-based resin in which a predetermined fluorescent agent is mixed, and then the LED 90 or the like. It is possible to improve the light utilization efficiency or the light diffusion with respect to the emitted light.

4 is a diagram for describing a process of manufacturing the lead frame of FIG. 2.

First, the PCB 10 is prepared (S1). The PCB may be in the form of a cross-sectional metal layer in which a metal layer of Cu or the like is formed on the epoxy FR-4 insulator about 180 micrometers, but is not limited thereto. A metal layer such as Cu is formed above and below a FR-4 insulator of 0.2 mm thickness. It may be a substrate having one double-sided metal layer.

Next, the upper metal layer of the PCB 10 is patterned (S2). At this time, the electrode leads 12, the metal layer 13 to be electrically separated from the electrode leads 12 and formed around the through hole for chip mounting, and the metal layer around the electrode leads 12 and the through hole for chip mounting The remaining portion is etched so that the metal layer 14 to be electrically separated from the (13) and to be formed at the left and right edges of the lead frame is patterned.

After such patterning, the chip mounting through-hole 21 and the electrical connection through-hole 22 are processed using NCs (S3). The chip mounting through hole 21 may have an inverted trapezoidal cross section narrowing downward, and when viewed from above, the area of the chip mounting through hole 21 is larger than the area of the chip 90 to be mounted.

Next, a metal plate 31 to be bonded to the back surface of the PCB 10 patterned and NC processed as described above is prepared (S4). The back metal plate 31 is made of a material having excellent electrical conductivity such as a Cu material, and has a sufficient thickness of about 150 micrometers or more, for example, about 200 micrometers, so that the degree of freedom of thermal conductivity can be ensured.

The prepared metal plate 31 is bonded to the rear surface of the PCB 10 (S5). At this time, the adhesive 32 of the predetermined heat conductor may be used. The adhesive 32 has a low thermal conductivity so that heat generated from the chip 90 as shown in FIG. 3 is not easily transferred to the resin-based molding material 80, thereby protecting the molding material 80 having low heat resistance and improving life. To solve the problem of peeling.

After the metal plate 31 is bonded to the back surface of the PCB 10, the metal plate 31 is etched to pattern the heat radiating portion 33 in a cross-radial manner as shown in FIG. 5, and at the same time, the electrode lead 12 as shown in FIG. The electrode portion 34 to be connected to and patterned together (S6). The heat dissipation portion 33 of the cross radial pattern is patterned in a larger area than the through hole 21 for chip mounting. The heat dissipation portion 33 is patterned to have a large enough area to cover the whole even when there are several chip mounting through holes 21. A total of four electrode portions 34 may be formed, one at each corner around the heat dissipation portion 33 for the rectangular lead frame. Accordingly, in the case where the chip 90 is mounted on the chip mounting through-hole 21, a large amount of heat generated in the chip 90 having a small area in accordance with the effective heat dissipation of the heat dissipation portion 33 is applied to the lower layer PCB. It can be efficiently dispersed in (10), and can have a sufficient thermal capacity to have a thermal conductivity of several hundred mK / W, it is possible to make a very small thermal resistance in the lower mother PCB (10). .

Next, before the plating of the subsequent S8 step, the fully bonded and patterned PCB 10 and the metal plate 31 as described above are etched completely between neighboring left and right lead frames, along each edge of both left and right sides of the PCB 10. The metal layer 14 is partially patterned on the PCB 10 (S7). Here, it is completely separated from the left and right lead frames by completely separating etching so as to penetrate to the bottom of the metal plate 31 from the top of the PCB 10 in a straight groove shape. There is no. According to such a fully separated etching, a routing for soldering with the metal layer 14 along the etched surface, that is, the side surface, is formed. The metal layer 14 may be used as a mold support for the mold (molding) process of the substrate.

Next, the first plating step S8, the metal filling step S9, and the second plating step S10 are performed.

In the first plating process S8, a Cu material 51 is formed on the electrode leads 12, the metal layer 13 formed around the chip mounting through hole 21, and the metal layer 14 formed on the left and right edges of the lead frame. Is coded as In addition, the portion exposed through the chip mounting through hole 21 of the heat dissipation portion 33 of the metal plate 31 and the through hole 22 for electrical connection among the electrode portions 34 of the metal plate 31 are exposed. The part which is also plated with Cu material 51 is coded by the thin film 51 to a predetermined thickness. At this time, since the FR-4 insulator of the PCB is in a very thin state of about 0.2 mm, the plated metal layer is also placed on the FR-4 insulator between the heat radiating portion 33 or the electrode portion 34 of each hole 21/22 and the metal plate 31. 51 may be formed, and the plating metal layer 51 may also be formed on the FR-4 insulator between the metal layer 14 formed at the left and right edges of the lead frame and the electrode portion 34 of the metal plate 31.

In the metal filling step (S9), the through hole 22 for electrical connection is filled with a metallic material 61 having excellent electrical conductivity such as Ag (S9). Accordingly, each electrode lead 12 is electrically connected to each electrode portion 34 of the metal plate 31.

Next, the secondary plating process (S10) is made of a material 52, such as Cu or Ag, to supplement the electrical connection and supplement the adhesion of the plating metal layer. Here, the plating metal layer may be formed at a portion similar to that of the first plating process S8, and in particular, the plating metal layer 52 may be cleanly formed on the filling metal 61 of the through hole 22 for electrical connection.

Accordingly, the first plating and the second order as described above are applied not only to the metal layer 13 formed around the chip mounting through hole 21, but also to the electrode leads 12 and the metal layer 14 formed at the left and right edges of the lead frame. Through plating, a metal coating layer 51/52 made of a plating metal film is formed. In addition, through the first plating and the second plating as described above, the metal layer 14 formed at the left and right edges of the lead frame is electrically connected to the electrode portion 34 of the metal plate 31 along the left and right sides of the lead frame. Accordingly, the electrical connection through the through hole 22 for electrical connection can be complemented.

After these processes are completed, although not shown in FIG. 4, the electrode leads 12 and the metal layer 13 formed around the chip mounting through hole 21 (71 in FIG. 3) have a constant light reflectance. Can be filled with insulators. This improves the light utilization efficiency and light diffusion of the chip 90 to be mounted. The chip 90 such as an LED has a metal coating layer formed on the metal plate 31 in the region of the chip mounting through hole 21, that is, the heat dissipation portion 33 formed through the first and second platings as described above. Can be mounted on

After the chip 90 is mounted, as shown in FIG. 3, wire bonding is appropriately performed between the electrode leads 12 and the pad of the chip 90 where necessary, and a predetermined fluorescent substance is mixed around the chip 90. Molding with an adhesive transparent resin 80, such as a silicone-based resin, to further improve the light utilization efficiency or light diffusion with respect to the light emitted from the LED chip (90). At this time, before molding with transparent resin 80, if necessary, forming a joint structure engaging part pattern for hermetic sealing in the molding joint around the chip 90, and using acrylic printing, epoxy, silicone Resin molding, or the like, or mixing a fluorescent agent (for example, zinc sulfide, barium sulfide, radium, etc.) to perform a molding process for better electrical insulation and light reflection to improve light utilization efficiency or light diffusion. Will be more advantageous.

Thereafter, the chip 90 mounted on each lead frame may be separated from the whole substrate by dicing one by one to be used as a light emitting lamp for display of various electronic devices such as an automobile instrument panel, a taillight, a keyboard, a signal lamp, and the like. . When the chip 90 is mounted on the lead frame and the electronic element is applied in the form of SMD in an electronic device or the like, the lead is formed from the metal layers 14 formed on the left and right edges of the lead frame by the above first and second platings. The metal coating layer on the side formed to electrically connect with the electrode portion 34 of the metal plate 31 along the left and right sides of the frame further expands the heat radiation area by elevating during soldering. Release can be further improved.

The lead frame structure of the present invention can be modified in various forms. For example, another PCB or metal plate having the chip mounting through hole 21 region removed from the PCB 10 above the lead frame may be joined. Accordingly, it is possible to improve the heat directivity of the chip 90 by improving the light directivity or extending the heat dissipation surface area. In addition, for example, using a different PCB under the metal plate 31 under the lead frame, or by joining other metal plates or heat pipes having a high thermal conductivity property, such as heat pipes to dissipate heat in high power operation. It is possible to further improve the properties.

As described above, the present invention has been described by way of limited embodiments and drawings, but the present invention is not limited to the above embodiments, and those skilled in the art to which the present invention pertains various modifications and variations from such descriptions. This is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined not only by the claims below but also by the equivalents of the claims.

1 is a view for explaining the structure of a typical lead frame in which a light emitting diode chip is mounted on a circuit board.

2 is a plan view for explaining the structure of a lead frame according to an embodiment of the present invention.

3 is a cross-sectional view of AA ′ shown in FIG. 2.

4 is a diagram for describing a process of manufacturing the lead frame of FIG. 2.

5 is a view for explaining the cross-radiation heat dissipation pattern of the metal plate bonded to the lower part of the lead frame of FIG.

6 is a view for explaining a heat dissipation pattern of the metal plate bonded to the lower part of the lead frame of FIG. 2 and an electrode pattern connected to the electrode lead.

Claims (19)

By using a lead frame in which a through hole and a PCB on which a plurality of electrode leads are formed and a metal plate having a larger area than the through hole are bonded to each other, A chip is mounted on the metal plate exposed in the through hole area, The PCB includes a through hole for electrical connection in each of the plurality of electrode leads, And each electrode lead is electrically connected to the electrode portion of the metal plate through the through hole for electrical connection. The electronic device of claim 1, wherein the electronic device comprises an SMD type LED. The electronic device according to claim 1, wherein the periphery of the chip is molded with a transparent resin mixed with a predetermined fluorescent agent. In the lead frame for mounting the chip, A PCB having a through hole for chip mounting and a plurality of electrode leads and a metal plate having a larger area than the through hole for chip mounting are joined. The area of the chip mounting through hole is larger than that of the chip to mount the chip on the metal plate exposed in the chip mounting through hole area. The PCB, A through hole for electrical connection in each of the plurality of electrode leads; And each electrode lead is electrically connected to an electrode portion of the metal plate through the through hole for electrical connection. The method of claim 4, wherein A metal coating layer on the metal plate of the through hole region for chip mounting; The lead frame, characterized in that the chip is mounted on the metal coating layer. The method of claim 4, wherein the metal plate, A plurality of electrode portions electrically separated from the heat dissipation portion and the heat dissipation portion Lead frame comprising a. The lead frame according to claim 6, wherein the heat dissipation part is a patterned part of the metal plate etched in a cross shape. The lead frame according to claim 6, wherein the electrode part includes a total of four around the heat dissipation part. delete The method of claim 4, wherein in the region including the through hole for electrical connection, And each electrode lead is electrically connected to the electrode portion of the metal plate through a sequential process of first plating, metal filling, and second plating. The method of claim 10, And a metal coating layer is formed on the metal plate in the through hole region for chip mounting through the first plating and the second plating, and the chip is mounted on the metal coating layer. The method of claim 10, wherein the PCB, A first metal layer of the same material as the electrode leads electrically separated from the electrode leads around the chip mounting through hole, And a metal coating layer formed on the first metal layer through the first plating and the second plating. 13. The lead frame according to claim 12, wherein between the electrode leads and the first metal layer is filled with an insulator. The method of claim 12, wherein the PCB, A second metal layer electrically separated from the electrode leads and the first metal layer and made of the same material as the electrode leads, The second metal layer is patterned along each edge of left and right sides of the PCB, And the electrode part of the metal plate is electrically connected from the second metal layer along the side surface through the first plating and the second plating. In the manufacturing method of the lead frame for mounting the chip, (A1) patterning the plurality of electrode leads on the PCB; (A2) processing a chip mounting through hole in the patterned PCB; (A2-1) processing through holes for electrical connection in regions of the plurality of electrode leads; (A3) bonding the PCB and the metal plate on which the chip mounting through hole and the electrical connection through hole are formed; (A4) etching the metal plate to form a pattern having a larger area than the through hole for chip mounting; And (A4-1) electrically connecting each electrode lead with the electrode portion of the metal plate through the through hole for electrical connection; And the area of the chip mounting through hole is larger than the area of the chip in order to mount the chip on the metal plate exposed in the chip mounting through hole area. The method of claim 15, The PCB comprises a single-sided metal layer or a double-sided metal layer with an insulator interposed therebetween. The method of claim 15, Step (A4) is, (A5) forming a plurality of electrode portions electrically separated from the heat dissipation portion and the heat dissipation portion, Step (A4-1), (A6) electrically connecting each electrode lead to each electrode portion of the metal plate through a sequential process of first plating, metal filling, and second plating in an area including the through hole for electrical connection. Including, And after the metal coating layer is formed on the metal plate of the through hole region for chip mounting through the first plating and the second plating, the chip is mounted on the metal coating layer. The method of claim 17, wherein the step (A1), A first metal layer made of the same material as the electrode leads electrically separated from the electrode leads around the chip mounting through hole; Electrically isolated from the electrode leads and the first metal layer to form a second metal layer of the same material as the electrode leads, Before step (A6), (A7) patterning the second metal layer along each edge of left and right sides of the PCB by completely separating and etching the PCB and the metal plate, which are bonded before the first plating, between adjacent left and right lead frames, And electrically connecting the second metal layer to the electrode portion of the metal plate through the first plating and the second plating along side surfaces of the lead frame by the fully separated etching. The method of claim 18, wherein after step (A4), (A8) filling the insulator between the electrode leads and the first metal layer Lead frame manufacturing method comprising a.

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