CN103107156A - 晶圆焊垫的凸块结构及其制造方法 - Google Patents
晶圆焊垫的凸块结构及其制造方法 Download PDFInfo
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- CN103107156A CN103107156A CN2011103563391A CN201110356339A CN103107156A CN 103107156 A CN103107156 A CN 103107156A CN 2011103563391 A CN2011103563391 A CN 2011103563391A CN 201110356339 A CN201110356339 A CN 201110356339A CN 103107156 A CN103107156 A CN 103107156A
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- Prior art keywords
- bump
- protective layer
- wafer
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Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 64
- 238000003466 welding Methods 0.000 title abstract 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 222
- 239000011241 protective layer Substances 0.000 claims abstract description 135
- 239000010410 layer Substances 0.000 claims abstract description 121
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 111
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052802 copper Inorganic materials 0.000 claims abstract description 59
- 239000010949 copper Substances 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 68
- 229910052737 gold Inorganic materials 0.000 claims description 68
- 239000010931 gold Substances 0.000 claims description 68
- 230000015572 biosynthetic process Effects 0.000 claims description 49
- 239000003054 catalyst Substances 0.000 claims description 49
- 239000000243 solution Substances 0.000 claims description 29
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 28
- 229910052725 zinc Inorganic materials 0.000 claims description 28
- 239000011701 zinc Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 26
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- 238000004064 recycling Methods 0.000 claims description 24
- 150000002815 nickel Chemical class 0.000 claims description 14
- 239000007864 aqueous solution Substances 0.000 claims description 13
- 238000005470 impregnation Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 8
- 239000012266 salt solution Substances 0.000 claims description 8
- 150000003751 zinc Chemical class 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910000159 nickel phosphate Inorganic materials 0.000 description 2
- JOCJYBPHESYFOK-UHFFFAOYSA-K nickel(3+);phosphate Chemical compound [Ni+3].[O-]P([O-])([O-])=O JOCJYBPHESYFOK-UHFFFAOYSA-K 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (25)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110356339.1A CN103107156B (zh) | 2011-11-11 | 2011-11-11 | 晶圆焊垫的凸块结构及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110356339.1A CN103107156B (zh) | 2011-11-11 | 2011-11-11 | 晶圆焊垫的凸块结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103107156A true CN103107156A (zh) | 2013-05-15 |
CN103107156B CN103107156B (zh) | 2016-02-10 |
Family
ID=48314898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110356339.1A Active CN103107156B (zh) | 2011-11-11 | 2011-11-11 | 晶圆焊垫的凸块结构及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103107156B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW518700B (en) * | 2002-01-07 | 2003-01-21 | Advanced Semiconductor Eng | Chip structure with bumps and the manufacturing method thereof |
CN1674242A (zh) * | 2004-03-26 | 2005-09-28 | 精工爱普生株式会社 | 半导体芯片、半导体装置、半导体装置的制造方法 |
US20060060970A1 (en) * | 2004-07-30 | 2006-03-23 | Samsung Electronics Co., Ltd. | Interconnection structure of integrated circuit chip |
CN101764113A (zh) * | 2008-12-25 | 2010-06-30 | 俞宛伶 | 半导体元件的线路面的连接垫上的金属凸块结构及形成方法 |
CN102222629A (zh) * | 2010-04-16 | 2011-10-19 | 台湾积体电路制造股份有限公司 | 半导体装置及其制造方法 |
-
2011
- 2011-11-11 CN CN201110356339.1A patent/CN103107156B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW518700B (en) * | 2002-01-07 | 2003-01-21 | Advanced Semiconductor Eng | Chip structure with bumps and the manufacturing method thereof |
CN1674242A (zh) * | 2004-03-26 | 2005-09-28 | 精工爱普生株式会社 | 半导体芯片、半导体装置、半导体装置的制造方法 |
US20060060970A1 (en) * | 2004-07-30 | 2006-03-23 | Samsung Electronics Co., Ltd. | Interconnection structure of integrated circuit chip |
CN101764113A (zh) * | 2008-12-25 | 2010-06-30 | 俞宛伶 | 半导体元件的线路面的连接垫上的金属凸块结构及形成方法 |
CN102222629A (zh) * | 2010-04-16 | 2011-10-19 | 台湾积体电路制造股份有限公司 | 半导体装置及其制造方法 |
Also Published As
Publication number | Publication date |
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CN103107156B (zh) | 2016-02-10 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191127 Address after: 11, Lane 17, section 3, Nanshan Road, Luzhu Township, Taoyuan County, Taiwan, China Co-patentee after: XIAMEN MSSB TECHNOLOGY CO.,LTD. Patentee after: MAO BANG ELECTRONIC CO.,LTD. Address before: Taoyuan County, Taiwan, China Patentee before: MAO BANG ELECTRONIC CO.,LTD. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210712 Address after: 361101 room e502b, Taiwan Science and technology enterprise cultivation center, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Fujian Province Patentee after: XIAMEN MSSB TECHNOLOGY Co.,Ltd. Address before: 11, Lane 17, section 3, Nanshan Road, Luzhu Township, Taoyuan County, Taiwan, China Patentee before: MAO BANG ELECTRONIC Co.,Ltd. Patentee before: XIAMEN MSSB TECHNOLOGY Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 361101 room e502b, Taiwan Science and technology enterprise cultivation center, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Fujian Province Patentee after: Jingwang Semiconductor (Xiamen) Co.,Ltd. Address before: 361101 room e502b, Taiwan Science and technology enterprise cultivation center, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Fujian Province Patentee before: XIAMEN MSSB TECHNOLOGY CO.,LTD. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230727 Address after: 361101 room e502b, Taiwan Science and technology enterprise cultivation center, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Fujian Province Patentee after: Jingwang Semiconductor (Xiamen) Co.,Ltd. Patentee after: Jingwang Semiconductor (Shandong) Co.,Ltd. Address before: 361101 room e502b, Taiwan Science and technology enterprise cultivation center, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Fujian Province Patentee before: Jingwang Semiconductor (Xiamen) Co.,Ltd. |