CN103105711B - 布线构造和具备其的薄膜晶体管阵列基板以及显示装置 - Google Patents

布线构造和具备其的薄膜晶体管阵列基板以及显示装置 Download PDF

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Publication number
CN103105711B
CN103105711B CN201210446168.6A CN201210446168A CN103105711B CN 103105711 B CN103105711 B CN 103105711B CN 201210446168 A CN201210446168 A CN 201210446168A CN 103105711 B CN103105711 B CN 103105711B
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CN
China
Prior art keywords
film
conductive film
wiring
transparent conductive
conducting film
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CN201210446168.6A
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English (en)
Chinese (zh)
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CN103105711A (zh
Inventor
永野慎吾
岛村武志
外德仁
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201210446168.6A 2011-11-09 2012-11-09 布线构造和具备其的薄膜晶体管阵列基板以及显示装置 Active CN103105711B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-245103 2011-11-09
JP2011245103A JP5907697B2 (ja) 2011-11-09 2011-11-09 配線構造及びそれを備える薄膜トランジスタアレイ基板並びに表示装置

Publications (2)

Publication Number Publication Date
CN103105711A CN103105711A (zh) 2013-05-15
CN103105711B true CN103105711B (zh) 2016-04-06

Family

ID=48223149

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CN201210446168.6A Active CN103105711B (zh) 2011-11-09 2012-11-09 布线构造和具备其的薄膜晶体管阵列基板以及显示装置

Country Status (3)

Country Link
US (1) US8928122B2 (enExample)
JP (1) JP5907697B2 (enExample)
CN (1) CN103105711B (enExample)

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JP5520897B2 (ja) * 2011-08-11 2014-06-11 株式会社ジャパンディスプレイ 液晶表示装置
JP2015012048A (ja) * 2013-06-27 2015-01-19 三菱電機株式会社 アクティブマトリクス基板およびその製造方法
JP6278633B2 (ja) * 2013-07-26 2018-02-14 三菱電機株式会社 薄膜トランジスタアレイ基板およびその製造方法、並びに、液晶表示装置およびその製造方法
JP6405196B2 (ja) * 2013-12-18 2018-10-17 キヤノン株式会社 半導体装置の製造方法
US9927658B2 (en) * 2014-08-07 2018-03-27 Sharp Kabushiki Kaisha Active matrix substrate, liquid crystal panel, and method for manufacturing active matrix substrate
WO2016021320A1 (ja) * 2014-08-07 2016-02-11 シャープ株式会社 アクティブマトリクス基板およびその製造方法
US20170219899A1 (en) * 2014-08-07 2017-08-03 Sharp Kabushiki Kaisha Active matrix substrate, liquid crystal panel, and method for manufacturing active matrix substrate
WO2018003633A1 (ja) * 2016-06-28 2018-01-04 シャープ株式会社 アクティブマトリクス基板、光シャッタ基板、表示装置、アクティブマトリクス基板の製造方法
TWI625847B (zh) * 2016-09-09 2018-06-01 友達光電股份有限公司 畫素結構及其製作方法
WO2018051878A1 (ja) * 2016-09-14 2018-03-22 シャープ株式会社 実装基板及び表示パネル
JP6978243B2 (ja) * 2017-07-26 2021-12-08 三菱電機株式会社 アレイ基板と当該アレイ基板を有する液晶表示装置
CN208422916U (zh) 2018-08-07 2019-01-22 京东方科技集团股份有限公司 阵列基板及显示装置
JP7680240B2 (ja) * 2021-03-30 2025-05-20 ローム株式会社 半導体装置
CN115793337B (zh) * 2022-12-19 2025-08-08 福州京东方光电科技有限公司 一种显示基板及显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW460731B (en) * 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
TW505813B (en) * 1999-12-28 2002-10-11 Nec Corp Active matrix substrate plate and manufacturing method therefor
CN1905166A (zh) * 2006-08-16 2007-01-31 广辉电子股份有限公司 薄膜晶体管阵列基板及其制作方法
CN101078841A (zh) * 2006-05-22 2007-11-28 三菱电机株式会社 液晶显示装置及其制造方法

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JP3281167B2 (ja) * 1994-03-17 2002-05-13 富士通株式会社 薄膜トランジスタの製造方法
JP2555987B2 (ja) 1994-06-23 1996-11-20 日本電気株式会社 アクティブマトリクス基板
KR100276442B1 (ko) * 1998-02-20 2000-12-15 구본준 액정표시장치 제조방법 및 그 제조방법에 의한 액정표시장치
JP3288637B2 (ja) * 1998-08-28 2002-06-04 富士通株式会社 Ｉｔｏ膜接続構造、ｔｆｔ基板及びその製造方法
KR100482468B1 (ko) 2000-10-10 2005-04-14 비오이 하이디스 테크놀로지 주식회사 프린지 필드 구동 액정 표시 장치
KR100695303B1 (ko) * 2000-10-31 2007-03-14 삼성전자주식회사 제어 신호부 및 그 제조 방법과 이를 포함하는 액정 표시장치 및 그 제조 방법
JP4974500B2 (ja) * 2004-09-15 2012-07-11 株式会社半導体エネルギー研究所 半導体装置、モジュール及び電子機器
JP4321557B2 (ja) 2006-07-06 2009-08-26 エプソンイメージングデバイス株式会社 電気光学装置、電気光学装置の製造方法及び電子機器
WO2008015813A1 (en) * 2006-08-02 2008-02-07 Sharp Kabushiki Kaisha Active matrix substrate and display device with same
US8218116B2 (en) 2007-08-01 2012-07-10 Sony Corporation Liquid crystal display panel and manufacturing method thereof
JP5154298B2 (ja) 2007-08-01 2013-02-27 株式会社ジャパンディスプレイウェスト 液晶表示パネル、その製造方法
JP2009117620A (ja) * 2007-11-07 2009-05-28 Casio Comput Co Ltd 画像読取装置およびその製造方法
JP5646162B2 (ja) 2009-01-23 2014-12-24 三菱電機株式会社 薄膜トランジスタアレイ基板、その製造方法、及び液晶表示装置
JP5671948B2 (ja) 2010-11-04 2015-02-18 三菱電機株式会社 薄膜トランジスタアレイ基板、及び液晶表示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW460731B (en) * 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
TW505813B (en) * 1999-12-28 2002-10-11 Nec Corp Active matrix substrate plate and manufacturing method therefor
CN101078841A (zh) * 2006-05-22 2007-11-28 三菱电机株式会社 液晶显示装置及其制造方法
CN1905166A (zh) * 2006-08-16 2007-01-31 广辉电子股份有限公司 薄膜晶体管阵列基板及其制作方法

Also Published As

Publication number Publication date
JP2013101232A (ja) 2013-05-23
JP5907697B2 (ja) 2016-04-26
US20130113109A1 (en) 2013-05-09
CN103105711A (zh) 2013-05-15
US8928122B2 (en) 2015-01-06

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