CN103098176A - 切割膜 - Google Patents
切割膜 Download PDFInfo
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- CN103098176A CN103098176A CN2011800436087A CN201180043608A CN103098176A CN 103098176 A CN103098176 A CN 103098176A CN 2011800436087 A CN2011800436087 A CN 2011800436087A CN 201180043608 A CN201180043608 A CN 201180043608A CN 103098176 A CN103098176 A CN 103098176A
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- film
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- styrene
- copolymer
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- 229920001577 copolymer Polymers 0.000 claims abstract description 30
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229920001971 elastomer Polymers 0.000 claims abstract description 17
- 239000000806 elastomer Substances 0.000 claims abstract description 17
- 229920000800 acrylic rubber Polymers 0.000 claims abstract description 7
- 238000005520 cutting process Methods 0.000 claims description 101
- 239000000463 material Substances 0.000 claims description 80
- 238000012360 testing method Methods 0.000 claims description 27
- 239000000853 adhesive Substances 0.000 claims description 17
- 230000001070 adhesive effect Effects 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 125000005250 alkyl acrylate group Chemical group 0.000 claims description 12
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 12
- 238000011156 evaluation Methods 0.000 claims description 9
- VSKJLJHPAFKHBX-UHFFFAOYSA-N 2-methylbuta-1,3-diene;styrene Chemical compound CC(=C)C=C.C=CC1=CC=CC=C1.C=CC1=CC=CC=C1 VSKJLJHPAFKHBX-UHFFFAOYSA-N 0.000 claims description 8
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 7
- 238000005381 potential energy Methods 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 125000000217 alkyl group Chemical group 0.000 abstract 2
- 239000012790 adhesive layer Substances 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 39
- 239000011347 resin Substances 0.000 description 15
- 229920005989 resin Polymers 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 206010052428 Wound Diseases 0.000 description 14
- 208000027418 Wounds and injury Diseases 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 241001050985 Disco Species 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000007767 bonding agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
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- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
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- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- PZWQOGNTADJZGH-SNAWJCMRSA-N (2e)-2-methylpenta-2,4-dienoic acid Chemical compound OC(=O)C(/C)=C/C=C PZWQOGNTADJZGH-SNAWJCMRSA-N 0.000 description 1
- 229940044192 2-hydroxyethyl methacrylate Drugs 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 206010013786 Dry skin Diseases 0.000 description 1
- 229920000219 Ethylene vinyl alcohol Polymers 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- -1 Polypropylene Polymers 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000002174 Styrene-butadiene Substances 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- FACXGONDLDSNOE-UHFFFAOYSA-N buta-1,3-diene;styrene Chemical compound C=CC=C.C=CC1=CC=CC=C1.C=CC1=CC=CC=C1 FACXGONDLDSNOE-UHFFFAOYSA-N 0.000 description 1
- MTAZNLWOLGHBHU-UHFFFAOYSA-N butadiene-styrene rubber Chemical compound C=CC=C.C=CC1=CC=CC=C1 MTAZNLWOLGHBHU-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000004715 ethylene vinyl alcohol Substances 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
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- RZXDTJIXPSCHCI-UHFFFAOYSA-N hexa-1,5-diene-2,5-diol Chemical compound OC(=C)CCC(O)=C RZXDTJIXPSCHCI-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229940063557 methacrylate Drugs 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920006146 polyetheresteramide block copolymer Polymers 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000011115 styrene butadiene Substances 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 229920000468 styrene butadiene styrene block copolymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
- C08L25/02—Homopolymers or copolymers of hydrocarbons
- C08L25/04—Homopolymers or copolymers of styrene
- C08L25/08—Copolymers of styrene
- C08L25/14—Copolymers of styrene with unsaturated esters
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- C08L53/02—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers of vinyl-aromatic monomers and conjugated dienes
- C08L53/025—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers of vinyl-aromatic monomers and conjugated dienes modified
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
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Abstract
根据本发明,提供切割时的切屑和基材须的产生少、而且具有适合的强度和良好的外观的切割膜。本发明的切割膜,在基材膜的至少一个面具有粘接层,上述基材膜包含:(甲基)丙烯酸烷基酯的至少2种和苯乙烯的共聚物(A);和苯乙烯类弹性体(B)。上述(甲基)丙烯酸烷基酯的至少2种和苯乙烯的共聚物(A)为苯乙烯-甲基丙烯酸烷基酯-丙烯酸烷基酯共聚物。
Description
技术领域
本发明涉及切割膜。
本申请基于2010年9月13日在日本申请的特愿2010-204062号、和2010年9月30日在日本申请的特愿2010-220410号主张优选权,在此援用其内容。
背景技术
在制造半导体装置的工序中,在切断半导体晶片或封装等半导体部件时使用切割膜。切割膜用于通过粘贴半导体部件,进行切割(切断、单片化),再对该切割膜进行扩展等,来拾取上述半导体晶片等。
一般而言,切割膜包括基材膜和粘接层。以往,作为基材膜大多使用聚氯乙烯(PVC)树脂膜。然而,由于防止由PVC树脂膜中含有的增塑剂的附着所造成的半导体部件的污染和对环境问题的意识的提高,所以最近开发了使用烯烃类树脂以及、乙烯-乙烯醇类树脂和乙烯甲基丙烯酸丙烯酸酯类树脂等非PVC树脂类材料的基材膜(例如参照专利文献1)。
另外,近年来,在半导体部件的小型化和薄型化的发展中,产生了在切割膜的厚度精度存在偏差的情况下,在切割工序中切割刀片的接触的方式产生差别容易发生半导体晶片破裂的问题。另外,当膜厚精度存在偏差时,还会发生产生半导体部件的切割残留或切割时的切屑和基材须(从基材膜的切割线延伸的须状的切割残渣)并附着于半导体器件的问题。特别是在切断半导体封装时,大多使用厚度大的切割刀片,因此,与切断半导体晶片时相比,产生基材须的问题显著出现。另外,在将半导体部件粘贴于切割膜进行切割后,为了扩大切断后的半导体部件彼此的间隔,进行切割膜的扩展。此时,如果基材没有充分的韧性则还会发生切割膜断裂的问题。因此,需要在切割时能够抑制基材须、并且在扩展时基材不断裂的切割膜。
现有技术文献
专利文献
专利文献1:日本特开2003-257893
发明内容
发明要解决的技术问题
本发明的目的在于提供在制造半导体时的切割工序中切屑和基材须的产生少、而且具有适合的扩展性的切割膜。
用于解决技术问题的手段
本发明的切割膜为在基材膜的至少一个面具有粘接层的切割膜,其中,上述基材膜包含:(甲基)丙烯酸烷基酯的至少2种和苯乙烯的共聚物(A);和苯乙烯类弹性体(B)。
在本发明的切割膜中,上述(甲基)丙烯酸烷基酯的至少2种和苯乙烯的共聚物(A)可以为苯乙烯-甲基丙烯酸烷基酯-丙烯酸烷基酯共聚物。
在本发明的切割膜中,上述苯乙烯类弹性体(B)可以为选自氢化乙烯基(苯乙烯-异戊二烯-苯乙烯)共聚物、苯乙烯-乙烯-丁烯-苯乙烯共聚物和它们的混合物中的至少1种苯乙烯类弹性体。
在本发明的切割膜中,上述基材膜中的苯乙烯-甲基丙烯酸烷基酯-丙烯酸烷基酯共聚物(A)与上述苯乙烯类弹性体(B)的重量比率(A/B)可以为A/B=65/35~45/55。
在本发明的切割膜中,以下的断裂能评价试验中的基材膜的断裂能可以为15mJ以上。
<断裂能评价试验>
在作为试验片的基材膜的一个面以下述切创制作条件制作十字切创。
将制作了切创的面朝向下侧,以下述的落锤试验条件对十字切创的交差点实施落锤试验。以基材膜断裂时的落锤前的锤的势能作为断裂能。
<切创制作条件>
使用刀片在厚度150μm的基材膜呈十字制作深度80μm、长度40mm以上的切创。
<落锤试验条件>
锤:1.02kg
锤前端形状:直径20mm的半球状
试验片固定形状:直径40mm的圆形状
发明效果
根据本发明,能够提供在制造半导体时的切割工序中切屑和基材须的产生少、而且具有适合的扩展性的切割膜。
附图说明
图1为表示本发明的切割膜的一个例子的概略截面图。
图2为本发明的断裂能评价试验中使用的十字切创制作后的试验用膜。
具体实施方式
本发明的切割膜,主要在制造半导体的工序中,切割(切断)半导体晶片或半导体封装等半导体部件时使用。上述切割膜,例如,用于通过粘贴于半导体晶片或半导体封装等,对半导体晶片等进行切割,然后进行扩展,来拾取切断半导体晶片而得到的半导体元件。
本发明在切割膜的基材膜的构成成分中使用:(甲基)丙烯酸烷基酯的至少2种和苯乙烯的共聚物(A);和苯乙烯类弹性体(B)。由此,能够实现在降低由基材膜的树脂引起的基材须的产生的同时,重视切割膜的扩展性的设计。以下,使用附图对本发明的构成要件进行说明。
<基材膜>
本发明的切割膜10,如图1例示的那样,至少具有基材膜1和粘接层2。上述基材膜1包含:(甲基)丙烯酸烷基酯的至少2种和苯乙烯的共聚物(A);和苯乙烯类弹性体(B)。优选上述(甲基)丙烯酸烷基酯的至少2种和苯乙烯的共聚物(A)为苯乙烯-甲基丙烯酸烷基酯-丙烯酸烷基酯共聚物。通过使用苯乙烯-甲基丙烯酸烷基酯-丙烯酸烷基酯共聚物,能够进一步减少切割时的切屑和基材须的产生。
作为上述苯乙烯类弹性体(B),例如能够列举苯乙烯-丁二烯共聚物、苯乙烯-丁二烯-苯乙烯共聚物、苯乙烯-丁二烯-丁烯-苯乙烯共聚物、苯乙烯-异戊二烯共聚物、苯乙烯-异戊二烯-苯乙烯共聚物、苯乙烯-乙烯-异戊二烯-苯乙烯共聚物、氢化乙烯基(苯乙烯-异戊二烯-苯乙烯)共聚物、苯乙烯-乙烯-丁烯-苯乙烯共聚物。其中特别优选为氢化乙烯基(苯乙烯-异戊二烯-苯乙烯)共聚物。通过使用氢化乙烯基(苯乙烯-异戊二烯-苯乙烯)共聚物,能够使基材膜的断裂强度更加优异,另外,能够进一步减少切割时的切屑和基材须的产生。另外,从提高基材层的断裂强度、并且降低切割时的切屑和须的同样的观点出发,优选为苯乙烯-乙烯-丁烯-苯乙烯共聚物或其与氢化乙烯基(苯乙烯-异戊二烯-苯乙烯)共聚物的混合物,特别优选为苯乙烯-乙烯-丁烯-苯乙烯共聚物。
优选上述基材膜1中的(甲基)丙烯酸烷基酯的至少2种和苯乙烯的共聚物(A)与苯乙烯类弹性体(B)的重量比率(A/B)为A/B=65/35~45/55。通过将(甲基)丙烯酸烷基酯的至少2种和苯乙烯的共聚物(A)的重量比率设为上述范围下限值以上,抑制基材膜的基材须的效果变得优异,通过设为上述范围上限值以下,基材膜的断裂强度变得合适。
如上述那样并用(甲基)丙烯酸烷基酯的至少2种和苯乙烯的共聚物(A)与苯乙烯类弹性体(B)的切割膜,在抑制基材须方面优异,适合在半导体部件加工工序中使用。
除此之外,在使用包含(甲基)丙烯酸烷基酯的至少2种和苯乙烯的共聚物(A)与苯乙烯类弹性体(B)的基材膜1的切割膜10中,利用了苯乙烯的硬且脆的性质,因此可得到如下效果。第1,苯乙烯类基材由于基材膜的模量高,所以能够通过扩展工序进一步扩大芯片间隔。由此,拾取时芯片彼此碰撞的风险减少,可防止芯片缺损。其结果,半导体元件的可靠性提高。第2,从切割线的剥离(delamination)得到改善。苯乙烯类基材脆,因此存在断裂时的应力小的趋势。当断裂应力小时,切割刀片对基材膜施加的压力变小,因此,从切割线起20~30μm左右剥离,具有减轻水从该剥离的部分浸入的效果。当发生剥离时,会造成芯片端面的污染。通过减轻剥离,半导体元件的可靠性提高。
另外,在本发明的切割膜的基材膜中,能够在不损害本发明的效果的范围内根据目的添加各种树脂或添加剂等。例如,为了赋予抗静电性,能够添加聚醚/聚烯烃嵌段聚合物或聚醚酯酰胺嵌段聚合物等高分子型抗静电剂或炭黑等。特别地,在赋予防静电效果时,从与烯烃类树脂的相容性的观点出发,优选使用聚醚/聚烯烃共聚物的离子导电型抗静电剂。另外,通过赋予弹性体能够提高断裂伸长率。
切割膜的基材膜的厚度,在用于切割半导体晶片时,优选为50μm以上150μm以下,更优选为70μm以上100μm以下。另外,在用于切割半导体封装等特殊部件时,优选为100μm以上300μm以下,更优选为150μm以上200μm以下。通过设为上述范围下限值以上,扩展时的基材膜会变得难以断裂,通过设为上述范围上限值以下,能够抑制切割时的基材须的产生。
根据本发明的切割膜,为了能够容易地拾取切割后的半导体部件,通过将粘贴有切割后的半导体部件的切割膜扩展(拉伸)来扩大半导体部件(芯片)彼此的间隔。为了得到合适的扩展性,优选以下的断裂能评价试验中的基材膜的断裂能为15mJ以上。通过设为上述下限值以上,能够抑制扩展时的断裂。断裂能能够通过改变基材膜中的弹性体的配合比率来适当调整。例如能够通过配合弹性体来增大断裂能。
<断裂能评价试验>
在作为试验片的基材膜的一个面以下述切创制作条件制作十字切创。
将制作了切创的面朝向下侧,以下述的落锤试验条件对十字切创的交差点实施落锤试验。以基材膜断裂时的落锤前的锤的势能作为断裂能。
<切创制作条件>
使用刀片在厚度150μm的基材膜呈十字制作深度80μm、长度40mm以上的切创。
<落锤试验条件>
锤:1.02kg
锤前端形状:直径20mm的半球状
试验片固定形状:直径40mm的圆形状
(粘接层)
如图1例示的那样,在本发明的切割膜10的基材膜1的至少一个面设置有粘接层2。作为粘接层2中使用的树脂组合物,可以列举丙烯酸酯类粘接剂、UV固化性聚氨酯丙烯酸酯树脂、异氰酸酯类交联剂等。其中,为了抑制半导体部件固定件、端材飞散和碎屑,优选使用含有极性基团的丙烯酸酯类粘接剂。作为丙烯酸酯类粘接剂,例如优选含有羧基的丙烯酸丁酯等。通过使用含有羧基的丙烯酸丁酯,会特别适合于抑制半导体部件固定件、端材飞散和碎屑。
粘接层2的厚度优选为3μm以上100μm以下。在切割膜用于切割半导体晶片时,优选为3μm以上10μm以下。另外,在用于切割封装等特殊部件时,优选为10μm以上30μm以下。通过将粘接层2的厚度设为上述范围下限值以上,可得到对被粘接体的保持力优异的切割膜,另外通过设为上述范围上限值以下,可得到切割时的加工性优异的切割膜。
<切割膜的制造方法的一个例子>
在本发明的切割膜10的粘接层2的形成中,使用将作为粘接层2使用的树脂溶解或分散于适当溶剂中得到的涂敷液。通过辊涂或凹版涂敷等公知的涂敷法将上述涂敷液涂敷在基材膜1或包含基材膜1的树脂膜上,并进行干燥,由此形成粘接层2。
在本发明的切割膜中,能够在不损害本发明的效果的范围内根据目的设置其他树脂层。
实施例
根据实施例更详细地说明本发明。但是,这些仅为例示,本发明并不限定于此。
<基材膜的制作>
以表1和2所示的重量配合比将下述原料通过干式混合进行混合后,以Φ50mm挤出机(L/D=25UNIMELT销钉螺杆螺杆压缩比=2.9)、300mm宽的衣架型模头(模唇间隙=0.5mm)、挤出温度=220℃(螺杆前端)的条件进行挤出制膜,得到了厚度150μm的片(基材膜)。
<实施例/比较例的基材膜中使用的原料>
·苯乙烯-甲基丙烯酸烷基酯-丙烯酸烷基酯共聚物
SX100(PS日本株式会社(PS Japan Corporation)制造)
·聚苯乙烯 HF77 (PS日本株式会社制造)
·聚丙烯 FS2011C (住友化学株式会社制造)
·氢化乙烯基(苯乙烯-异戊二烯-苯乙烯)共聚物
HYBRAR7125(株式会社可乐丽(Kuraray Co.,Ltd.)制造)
·苯乙烯-乙烯-丁烯-苯乙烯共聚物
SEPTON8007(株式会社可乐丽制造)<粘接层的制作>
使30重量%的丙烯酸-2-乙基己酯、69重量%的乙酸乙烯酯和1重量%的甲基丙烯酸-2-羟乙酯在甲苯溶剂中进行溶液聚合,得到重均分子量150,000的原料树脂。相对于该原料树脂100重量份,将作为能量射线固化型树脂的2官能聚氨酯丙烯酸酯100重量份(三菱丽阳株式会社(Mitsubishi Rayon Co.,Ltd.)制造、重均分子量11,000)、作为交联剂的甲苯二异氰酸酯的多元醇加成物(CORONATE L、日本聚氨酯株式会社制造)15重量份和作为能量射线聚合引发剂的2,2-二甲氧基-2-苯基苯乙酮5重量份溶解于乙酸乙酯。将该溶解后的树脂,以干燥后的粘接层的厚度为20μm的方式涂敷于剥离处理后的聚酯膜(厚度38μm),在80℃干燥5分钟得到粘接层。
<切割膜的制作>
在以表1和2的重量配合比得到的厚度150μm的基材膜上,将上述的粘接层在30℃使用层压辊(laminate roll)进行层压,得到切割膜。
通过以下的项目实施所得到的切割膜的评价。
<1>基材须的产生
将通过上述得到的切割膜粘贴于硅镜晶片(silicon mirror wafer)(粘贴于镜面)。粘贴后放置20分钟,以下述切割条件1实施切割。将切割后的切割膜以下述UV照射条件1进行UV照射,将硅镜晶片剥离后,用显微镜观察切割后的切割线。对任意相邻的10个芯片(5×2),用显微镜(25倍)观察其切割线的各边的切屑(基材须)。其结果,将基材须的合计数为2个以下的评价为◎,3个以上5个以下的评价为○,6个以上10个以下的评价为△,11个以上的评价为×。
<切割条件1>
切割刀片:NBC-ZH2050-SE27HEDD
(株式会社Disco(Disco Corporation)制造)
刀片转速:30000rpm
切割速度:50mm/sec
样品切割尺寸:5mm×5mm四方形
刀片高度:75μm
使用6英寸环/半导体晶片(厚度:400μm)
<UV照射条件1>
照度:65mW/cm2
累计光量:200mJ/cm2
UV灯:高压水银灯H03-L21 80W/cm
(Eye Graphics株式会社(Eye Graphics Co.,Ltd.)制造)
UV照度计:UV-PFA1(Eye Graphics株式会社制造)
<2>扩展性
使用以上述条件制作的切割膜,以下述切割条件2进行切割。然后,以下述UV照射条件2进行UV照射后以下述扩展条件1实施扩展。其结果,将膜不断裂的评价为○,将膜断裂的评价为×。
<切割条件2>
切割刀片:NBC-ZH2050-SE27HEDD
(株式会社Disco制造)
刀片转速:30000rpm
切割速度:50mm/sec
样品切割尺寸:5mm×5mm四方形
刀片高度:75μm
使用6英寸环/半导体晶片(厚度:400μm)
<UV照射条件2>
照度:65mW/cm2
累计光量:200mJ/cm2
UV灯:高压水银灯H03-L2180W/cm
(Eye Graphics株式会社制造)
UV照度计:UV-PFA1(Eye Graphics株式会社制造)
<扩展条件1>
扩展量:5mm
使用8英寸环
<3>断裂能
在基材膜上以下述切割条件3呈十字实施切割后,使切割线向下,从基材膜的背面对切割线十字的交差部以下述落锤试验条件1实施落锤试验。测定基材膜断裂时的落锤前的锤的势能,作为断裂能。
<切割条件3>
切割刀片:NBC-ZH2050-SE27HEDD
(株式会社Disco制造)
刀片转速:40000rpm
切割速度:100mm/sec
刀片高度:80μm
样品切割尺寸:70mm×60mm四方形
使用6英寸环
<落锤试验条件1>
锤:1.02kg
锤前端形状:直径20mm的半球状
试验片固定形状:直径40mm的圆形状
<4>扩展时的芯片间距离
将实施例1和比较例5的切割膜粘贴于4英寸晶片以下述切割条件4进行切割后,以下述UV照射条件3进行UV照射。然后,以下述扩展条件2进行扩展。在扩展后的状态下,测定5个任意的芯片间距离,将其平均值作为芯片间距离。
<切割条件4>
切割刀片:NBC-ZH2050-SE27HEDD
(株式会社Disco制造)
刀片转速:40000rpm
切割速度:50m/min
基材切入量:距离粘接剂层35μm
样品切割尺寸:10mm×10mm
<UV照射条件3>
照度:65mW/cm2
累计光量:200mJ/cm2
UV灯:高压水银灯H03-L2180W/cm
(Eye Graphics株式会社制造)
UV照度计:UV-PFA1(Eye Graphics株式会社制造)
<扩展条件2>
扩展量:5mm
<5>芯片切割线部分的剥离
将实施例1和比较例5的切割膜粘贴于4英寸晶片以下述切割条件5进行切割后,以下述UV照射条件4进行UV照射。然后,在将芯片从基材膜剥离后,用显微镜观察切割线,测定从切割线端部的剥离部分的大小。
<切割条件5>
切割刀片:NBC-ZH2050-SE27HEDD
(株式会社Disco制造)
刀片转速:40000rpm
切割速度:50m/min
基材切入量:距离粘接剂层35μm
样品切割尺寸:10mm×10mm
<UV照射条件4>
照度:65mW/cm2
累计光量:200mJ/cm2
UV灯:高压水银灯H03-L2180W/cm
(Eye Graphics株式会社制造)
UV照度计:UV-PFA1(Eye Graphics株式会社制造)
将上述实施例和比较例的评价结果示于表1和表2。实施例1~6全部抑制了基材须的产生,为良好。另外,关于基材膜的扩展性也为良好的结果。另一方面,比较例2、4、5不能抑制基材须的产生,关于比较例1、3,结果为不能得到具有充分的扩展性的基材膜。另外,在实施例1中,与比较例5相比,扩展时的芯片间距离增大。另外,在实施例1中,对于芯片的切割线部分没有确认到剥离,但在比较例5中结果确认到了剥离。
[表1]
[表2]
产业上的可利用性
本发明的切割膜,切割时的切屑和基材须的产生少,作为切割膜具有适合的强度和良好的外观,因此,适合在制造半导体装置的切割工序中作为半导体部件固定用的膜使用。
符号说明
1···基材膜
2···粘接层
3···切创
10···切割膜
Claims (5)
1.一种切割膜,其为在基材膜的至少一个面具有粘接层的切割膜,其特征在于:
所述基材膜包含:(甲基)丙烯酸烷基酯的至少2种和苯乙烯的共聚物(A);和苯乙烯类弹性体(B)。
2.如权利要求1所述的切割膜,其特征在于:
所述(甲基)丙烯酸烷基酯的至少2种和苯乙烯的共聚物(A)为苯乙烯-甲基丙烯酸烷基酯-丙烯酸烷基酯共聚物。
3.如权利要求1或2所述的切割膜,其特征在于:
所述苯乙烯类弹性体(B)为选自氢化乙烯基(苯乙烯-异戊二烯-苯乙烯)共聚物、苯乙烯-乙烯-丁烯-苯乙烯共聚物和它们的混合物中的至少1种苯乙烯类弹性体。
4.如权利要求1~3中任一项所述的切割膜,其特征在于:
所述基材膜中的(甲基)丙烯酸烷基酯的至少2种和苯乙烯的共聚物(A)与苯乙烯类弹性体(B)的重量比率(A/B)为A/B=65/35~45/55。
5.如权利要求1~4中任一项所述的切割膜,其特征在于:
以下的断裂能评价试验中的所述基材膜的断裂能为15mJ以上,
<断裂能评价试验>
在作为试验片的基材膜的一个面以下述切创制作条件制作十字切创,
将制作了切创的面朝向下侧,以下述的落锤试验条件对十字切创的交差点实施落锤试验,以基材膜断裂时的落锤前的锤的势能作为断裂能,
<切创制作条件>
使用刀片在厚度150μm的基材膜呈十字制作深度80μm、长度40mm以上的切创,
<落锤试验条件>
锤:1.02kg,
锤前端形状:直径20mm的半球状,
试验片固定形状:直径40mm的圆形状。
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JP2010-204062 | 2010-09-13 | ||
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106133095A (zh) * | 2014-03-26 | 2016-11-16 | 汉高股份有限及两合公司 | 热熔压敏粘合剂 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2690146A4 (en) * | 2011-03-24 | 2014-08-20 | Sumitomo Bakelite Co | ADHESIVE TAPE FOR THE PROCESSING OF SEMICONDUCTOR WAFERS AND SIMILAR |
JP2013193786A (ja) * | 2012-03-22 | 2013-09-30 | Sumitomo Bakelite Co Ltd | 電子部品包装用カバーテープおよび電子部品包装体 |
MY168738A (en) * | 2012-09-25 | 2018-11-29 | Sumitomo Bakelite Co | Dicing film |
JP6133069B2 (ja) * | 2013-01-30 | 2017-05-24 | デクセリアルズ株式会社 | 加熱硬化型接着フィルム |
JP6330468B2 (ja) * | 2014-05-13 | 2018-05-30 | 住友ベークライト株式会社 | ダイシングフィルム用基材フィルムおよびダイシングフィルム |
JP6616558B1 (ja) * | 2018-06-26 | 2019-12-04 | リンテック株式会社 | 半導体加工用粘着テープおよび半導体装置の製造方法 |
CN112400216A (zh) * | 2018-06-26 | 2021-02-23 | 琳得科株式会社 | 半导体加工用粘着胶带及半导体装置的制造方法 |
WO2020003920A1 (ja) | 2018-06-26 | 2020-01-02 | リンテック株式会社 | 半導体加工用粘着テープおよび半導体装置の製造方法 |
TWI653676B (zh) | 2018-08-31 | 2019-03-11 | 翊聖企業股份有限公司 | 切割片膠膜用基膜及其製作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004035644A (ja) * | 2002-07-01 | 2004-02-05 | Sumitomo Bakelite Co Ltd | 半導体基板加工用粘着シート |
JP2005248018A (ja) * | 2004-03-04 | 2005-09-15 | Furukawa Electric Co Ltd:The | 半導体ウェハー固定用粘着テープ |
WO2009063793A1 (ja) * | 2007-11-15 | 2009-05-22 | The Furukawa Electric Co., Ltd. | 半導体ウエハ加工用粘着テープ |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY111332A (en) * | 1991-06-28 | 1999-11-30 | Furukawa Electric Co Ltd | Semiconductor wafer-securing adhesive tape. |
US5538771A (en) * | 1991-06-28 | 1996-07-23 | Furukawa Electric Co., Ltd. | Semiconductor wafer-securing adhesive tape |
US5539030A (en) * | 1992-03-10 | 1996-07-23 | The Dow Chemical Company | Polycarbonate compositions modified with poly(phenylene ether) |
JP3984075B2 (ja) | 2002-02-27 | 2007-09-26 | 日東電工株式会社 | ダイシング用粘着シート |
JPWO2003095499A1 (ja) * | 2002-05-10 | 2005-09-15 | Psジャパン株式会社 | スチレン系重合体樹脂とその組成物 |
JP2004079916A (ja) * | 2002-08-21 | 2004-03-11 | Kuraray Co Ltd | 半導体ウエハダイシング用粘着シート |
JP5133522B2 (ja) * | 2006-01-19 | 2013-01-30 | 東洋製罐株式会社 | メタノール燃料電池カートリッジ用弾性部材 |
US8282754B2 (en) * | 2007-04-05 | 2012-10-09 | Avery Dennison Corporation | Pressure sensitive shrink label |
JP5207660B2 (ja) * | 2007-05-22 | 2013-06-12 | グンゼ株式会社 | ダイシング用基体フイルム及びダイシングフイルム |
WO2009078440A1 (ja) * | 2007-12-18 | 2009-06-25 | The Furukawa Electric Co., Ltd. | ウエハ貼着用粘着シートおよびウエハの加工方法 |
JP5663302B2 (ja) * | 2008-03-26 | 2015-02-04 | リンテック株式会社 | 粘着シート |
EP2690146A4 (en) * | 2011-03-24 | 2014-08-20 | Sumitomo Bakelite Co | ADHESIVE TAPE FOR THE PROCESSING OF SEMICONDUCTOR WAFERS AND SIMILAR |
TWI671799B (zh) * | 2011-03-30 | 2019-09-11 | Sumitomo Bakelite Co., Ltd. | 半導體晶圓等加工用黏著帶 |
-
2011
- 2011-09-12 JP JP2011198713A patent/JP2012094834A/ja active Pending
- 2011-09-13 EP EP11825151.1A patent/EP2590207A4/en not_active Withdrawn
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004035644A (ja) * | 2002-07-01 | 2004-02-05 | Sumitomo Bakelite Co Ltd | 半導体基板加工用粘着シート |
JP2005248018A (ja) * | 2004-03-04 | 2005-09-15 | Furukawa Electric Co Ltd:The | 半導体ウェハー固定用粘着テープ |
WO2009063793A1 (ja) * | 2007-11-15 | 2009-05-22 | The Furukawa Electric Co., Ltd. | 半導体ウエハ加工用粘着テープ |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106133095A (zh) * | 2014-03-26 | 2016-11-16 | 汉高股份有限及两合公司 | 热熔压敏粘合剂 |
CN106133095B (zh) * | 2014-03-26 | 2019-03-22 | 汉高股份有限及两合公司 | 热熔压敏粘合剂 |
US10604682B2 (en) | 2014-03-26 | 2020-03-31 | Henkel Ag & Co. Kgaa | Hot-melt pressure-sensitive adhesive |
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US9570335B2 (en) | 2017-02-14 |
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MY172400A (en) | 2019-11-22 |
EP2590207A4 (en) | 2014-08-20 |
TWI523929B (zh) | 2016-03-01 |
US20130171449A1 (en) | 2013-07-04 |
TW201217486A (en) | 2012-05-01 |
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EP2590207A1 (en) | 2013-05-08 |
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