CN103053010B - 硅晶片加工液及硅晶片加工方法 - Google Patents
硅晶片加工液及硅晶片加工方法 Download PDFInfo
- Publication number
- CN103053010B CN103053010B CN201180040687.6A CN201180040687A CN103053010B CN 103053010 B CN103053010 B CN 103053010B CN 201180040687 A CN201180040687 A CN 201180040687A CN 103053010 B CN103053010 B CN 103053010B
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- China
- Prior art keywords
- silicon wafer
- working fluid
- mass
- containing compound
- wafer working
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 106
- 239000010703 silicon Substances 0.000 title claims abstract description 106
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 95
- 238000003672 processing method Methods 0.000 title claims abstract description 17
- 239000007788 liquid Substances 0.000 title abstract description 4
- -1 nitrogen-containing compound Chemical class 0.000 claims abstract description 51
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000006061 abrasive grain Substances 0.000 claims abstract description 27
- 239000003607 modifier Substances 0.000 claims abstract description 14
- 150000002391 heterocyclic compounds Chemical class 0.000 claims abstract description 9
- 239000012530 fluid Substances 0.000 claims description 102
- 150000003376 silicon Chemical class 0.000 claims description 11
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 9
- 239000012964 benzotriazole Substances 0.000 claims description 9
- 239000000654 additive Substances 0.000 claims description 5
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 4
- BAXOFTOLAUCFNW-UHFFFAOYSA-N 1H-indazole Chemical compound C1=CC=C2C=NNC2=C1 BAXOFTOLAUCFNW-UHFFFAOYSA-N 0.000 claims description 4
- 241001597008 Nomeidae Species 0.000 claims description 4
- 230000000844 anti-bacterial effect Effects 0.000 claims description 4
- 239000013530 defoamer Substances 0.000 claims description 4
- 239000002270 dispersing agent Substances 0.000 claims description 4
- 239000003002 pH adjusting agent Substances 0.000 claims description 4
- 239000003755 preservative agent Substances 0.000 claims description 4
- 230000002335 preservative effect Effects 0.000 claims description 4
- 239000002562 thickening agent Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 239000004034 viscosity adjusting agent Substances 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005299 abrasion Methods 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 38
- 238000005520 cutting process Methods 0.000 description 11
- 239000000843 powder Substances 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 7
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 229920002521 macromolecule Polymers 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 150000002334 glycols Chemical class 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 229920003169 water-soluble polymer Polymers 0.000 description 3
- 229920002125 Sokalan® Polymers 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- PGRHXDWITVMQBC-UHFFFAOYSA-N dehydroacetic acid Chemical compound CC(=O)C1C(=O)OC(C)=CC1=O PGRHXDWITVMQBC-UHFFFAOYSA-N 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- TVIDDXQYHWJXFK-UHFFFAOYSA-N dodecanedioic acid Chemical compound OC(=O)CCCCCCCCCCC(O)=O TVIDDXQYHWJXFK-UHFFFAOYSA-N 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 2
- FBUKVWPVBMHYJY-UHFFFAOYSA-N nonanoic acid Chemical compound CCCCCCCCC(O)=O FBUKVWPVBMHYJY-UHFFFAOYSA-N 0.000 description 2
- 239000004584 polyacrylic acid Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 239000008399 tap water Substances 0.000 description 2
- 235000020679 tap water Nutrition 0.000 description 2
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- XQIOBBHIEUGFCI-UHFFFAOYSA-N 3,4-dihydropyrido[1,2-a]pyrimidin-2-one Chemical compound C1=CC=CC2=NC(=O)CCN21 XQIOBBHIEUGFCI-UHFFFAOYSA-N 0.000 description 1
- 208000019901 Anxiety disease Diseases 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 239000004287 Dehydroacetic acid Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 241000196435 Prunus domestica subsp. insititia Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 229960004365 benzoic acid Drugs 0.000 description 1
- 235000008429 bread Nutrition 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 235000019258 dehydroacetic acid Nutrition 0.000 description 1
- 229940061632 dehydroacetic acid Drugs 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000011549 displacement method Methods 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- BEFDCLMNVWHSGT-UHFFFAOYSA-N ethenylcyclopentane Chemical compound C=CC1CCCC1 BEFDCLMNVWHSGT-UHFFFAOYSA-N 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- ZHPNWZCWUUJAJC-UHFFFAOYSA-N fluorosilicon Chemical compound [Si]F ZHPNWZCWUUJAJC-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- MTNDZQHUAFNZQY-UHFFFAOYSA-N imidazoline Chemical compound C1CN=CN1 MTNDZQHUAFNZQY-UHFFFAOYSA-N 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 229940083082 pyrimidine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 235000010199 sorbic acid Nutrition 0.000 description 1
- 239000004334 sorbic acid Substances 0.000 description 1
- 229940075582 sorbic acid Drugs 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 210000001138 tear Anatomy 0.000 description 1
- 150000004867 thiadiazoles Chemical class 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 1
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M133/00—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing nitrogen
- C10M133/02—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing nitrogen having a carbon chain of less than 30 atoms
- C10M133/38—Heterocyclic nitrogen compounds
- C10M133/44—Five-membered ring containing nitrogen and carbon only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
- B23D61/00—Tools for sawing machines or sawing devices; Clamping devices for these tools
- B23D61/18—Sawing tools of special type, e.g. wire saw strands, saw blades or saw wire equipped with diamonds or other abrasive particles in selected individual positions
- B23D61/185—Saw wires; Saw cables; Twisted saw strips
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M133/00—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing nitrogen
- C10M133/02—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing nitrogen having a carbon chain of less than 30 atoms
- C10M133/22—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing nitrogen having a carbon chain of less than 30 atoms containing a carbon-to-nitrogen double bond, e.g. guanidines, hydrazones, semicarbazones
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M133/00—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing nitrogen
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- C10M133/38—Heterocyclic nitrogen compounds
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M133/00—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing nitrogen
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- C10M133/38—Heterocyclic nitrogen compounds
- C10M133/40—Six-membered ring containing nitrogen and carbon only
- C10M133/42—Triazines
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M133/00—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing nitrogen
- C10M133/02—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing nitrogen having a carbon chain of less than 30 atoms
- C10M133/38—Heterocyclic nitrogen compounds
- C10M133/44—Five-membered ring containing nitrogen and carbon only
- C10M133/46—Imidazoles
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M173/00—Lubricating compositions containing more than 10% water
- C10M173/02—Lubricating compositions containing more than 10% water not containing mineral or fatty oils
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/016—Diazonium salts or compounds
- G03F7/021—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
- C10M2207/02—Hydroxy compounds
- C10M2207/021—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2207/022—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms containing at least two hydroxy groups
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2215/00—Organic non-macromolecular compounds containing nitrogen as ingredients in lubricant compositions
- C10M2215/22—Heterocyclic nitrogen compounds
- C10M2215/221—Six-membered rings containing nitrogen and carbon only
- C10M2215/222—Triazines
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2215/00—Organic non-macromolecular compounds containing nitrogen as ingredients in lubricant compositions
- C10M2215/22—Heterocyclic nitrogen compounds
- C10M2215/223—Five-membered rings containing nitrogen and carbon only
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2215/00—Organic non-macromolecular compounds containing nitrogen as ingredients in lubricant compositions
- C10M2215/22—Heterocyclic nitrogen compounds
- C10M2215/223—Five-membered rings containing nitrogen and carbon only
- C10M2215/224—Imidazoles
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
- C10N2030/06—Oiliness; Film-strength; Anti-wear; Resistance to extreme pressure
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2040/00—Specified use or application for which the lubricating composition is intended
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials Engineering (AREA)
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Abstract
用于硅晶片加工方法的硅晶片加工液,其掺混有含有含氮化合物的摩擦调节剂,含氮化合物在将与水的质量比(含氮化合物/水)设为1/99时pH为2以上且8以下。含氮化合物优选为杂环化合物。硅晶片加工液可抑制锯丝上固定有的磨料颗粒的磨损和氢的产生。
Description
技术领域
本发明涉及硅晶片加工液及硅晶片加工方法。
背景技术
在制备硅晶片时,进行硅锭的切断和硅晶片的研磨等加工。例如,一边将加工液灌(掛け流し)到锯丝(wire)上,一边进行硅锭的切断。在这里,在硅锭的切断方面,有如下方式:在将磨料颗粒分散于加工液中的状态下切断硅锭的游离磨料颗粒方式,和在预先将磨料颗粒固定于锯丝表面的状态下切断硅锭的固定磨料颗粒方式。
作为用于游离磨料颗粒方式的加工液,例如有含有摩擦系数降低剂和防锈助剂等的水溶性加工液。作为该加工液中含有的摩擦系数降低剂,使用不饱和脂肪酸,作为防锈助剂,使用苯并三唑(参照专利文献1)。
作为用于固定磨料颗粒方式的加工液,例如有含有二醇类、羧酸、烷醇胺等的水溶性加工液(参照专利文献2)。
现有技术文献
专利文献
专利文献1:日本特开平8-57848号公报
专利文献2:日本特开2003-82334号公报。
发明内容
发明所要解决的课题
在这里,在如专利文献1的游离磨料颗粒方式下,由于当锯丝粗时,切割宽度(切代)变大,所以产生大量切粉,硅锭的切断中成品率恶化。另一方面,由于锯丝随着使用而被逐渐削减,所以使锯丝本身变细有着限制。因此,在期待今后大幅增产的太阳电池用等硅晶片的制备中,在游离磨料颗粒方式下生产能力不如所要求的那样良好。
因此,根据专利文献2之类的固定磨料颗粒方式,由于预先将磨料颗粒固定于锯丝上,所以可使锯丝变细,能减少切粉。但是,在这样的固定磨料颗粒方式下,磨料颗粒也随着锯丝的使用而磨损或脱落。从而存在因锯丝断线或加工效率和切断精度降低而造成成品率降低的问题。另外,还存在切粉与水反应而产生氢,加工液从加工液罐溢出等问题。
因此,本发明的目的在于:提供可抑制磨料颗粒的磨损和氢的产生的硅晶片加工液和硅晶片加工方法。
解决课题的手段
为解决上述课题,本发明提供如下所示的硅晶片加工液和硅晶片加工方法。
(1)硅晶片加工液,其特征在于,所述硅晶片加工液为掺混含有含氮化合物的摩擦调节剂而成的硅晶片加工液,所述含氮化合物在将与水的质量比(所述含氮化合物/所述水)设为1/99时pH为2以上且8以下。
(2)上述本发明的硅晶片加工液,其特征在于,所述含氮化合物为杂环化合物。
(3)上述本发明的硅晶片加工液,其特征在于,所述杂环化合物为苯并三唑、3,4-二氢-3-羟基-4-氧代-1,2,3-苯并三嗪、吲唑、苯并咪唑和它们的衍生物中的至少任一种。
(4)上述本发明的硅晶片加工液,其特征在于,该硅晶片加工液的pH为3以上且9以下。
(5)上述本发明的硅晶片加工液,其特征在于,以加工液总量为基准,所述含氮化合物的含量为0.05质量%以上且10质量%以下。
(6)上述本发明的硅晶片加工液,其特征在于,以加工液总量为基准,该硅晶片加工液含有50质量%以上且99.95质量%以下的水。
(7)上述本发明的硅晶片加工液,其特征在于,在利用固定有磨料颗粒的锯丝的硅晶片加工中使用。
(8)硅晶片加工方法,其特征在于,所述硅晶片加工方法为使用掺混含有含氮化合物的摩擦调节剂而成的硅晶片加工液,利用固定有磨料颗粒的锯丝加工硅晶片的硅晶片加工方法,所述含氮化合物在将与水的质量比(所述含氮化合物/所述水)设为1/99时pH为2以上且8以下。
根据本发明,提供可抑制磨料颗粒的磨损和氢的产生的硅晶片加工液和硅晶片加工方法。
具体实施方式
本发明的硅晶片加工液(以下有时简称为“加工液”。)在利用锯丝加工硅晶片时使用。在这里,对本发明的加工液在通过固定磨料颗粒方式切断硅锭时使用的情况进行说明,但也可为在游离磨料颗粒方式中使用的情况。
本发明的加工液掺混摩擦调节剂而成。摩擦调节剂含有含氮化合物,该含氮化合物在将与水的质量比(含氮化合物/水)设为1/99时,pH为2以上且8以下。
当pH低于2时,有腐蚀锯丝、线锯、硅等之虞。另一方面,当pH超过8时,切断硅锭时的摩擦系数增加,摩擦增大。因此,pH优选为3以上且7以下,进一步优选为4以上且6以下。
作为具有这样的特定pH的氮化合物,例如为杂环化合物,具体而言,可列举出苯并三唑、3,4-二氢-3-羟基-4-氧代-1,2,3-苯并三嗪、吲唑、苯并咪唑和它们的衍生物等。在它们之中,优选苯并三唑和3,4-二氢-3-羟基-4-氧代-1,2,3-苯并三嗪。
通过本发明的含氮化合物,使得锯丝的润滑性良好,抑制锯丝上固定有的磨料颗粒的磨损,可防止磨料颗粒从锯丝脱落。因此,可防止锯丝断线,提高加工效率和切断精度,所以可提高成品率。另外,通过这样的含氮化合物,可抑制硅锭的切粉与水反应而产生氢。从而可防止加工液从加工液罐溢出。
另外,本发明的加工液优选pH为3以上且9以下,进一步优选为5以上且7以下。由于pH为中度酸性至弱碱性的范围,所以可进一步抑制氢的产生。此外,也可防止锯丝、硅等的腐蚀。
而且,以加工液总量为基准,本发明的含氮化合物的含量优选为0.05质量%以上且10质量%以下,进一步优选为0.1质量%以上且5质量%以下。由于含量为0.05质量%以上,所以可进一步抑制磨料颗粒的磨损和氢的产生,防止锯丝、硅等的腐蚀。另一方面,由于含量为10质量%以下,所以可抑制成本。
本发明的加工液含有水,作为水,无特殊限制,可为自来水、纯化水。水的含量优选为50质量%以上且99.95质量%以下,进一步优选为60质量%以上且95质量%以下。通过设为50质量%以上,与以往用作主要成分的乙二醇等相比,可减小环境负担。另外,由于以水为主要成分,所以可降低易燃性。
接着,对本发明的硅晶片加工方法进行说明。
本发明的硅晶片加工方法例如为固定磨料颗粒方式,预先将磨料颗粒固定于锯丝上。
在实施本发明的硅晶片加工方法时,将硅锭导入围有锯丝的线锯的加工室内。
随即,一边将本发明的加工液灌到锯丝上,一边切断硅锭。
本发明的加工液由于含有具有特定pH的含氮化合物,所以可防止磨料颗粒磨损。另外,虽然产生硅锭的切粉,但通过本发明的含氮化合物,可抑制切粉与水反应。
需说明的是,本发明的加工液可在违反不本发明目的的范围内含有摩擦调节剂、消泡剂、金属钝化剂、杀菌剂(防腐剂)、粘度调节剂、pH调节剂、增稠剂、分散剂等公知的添加剂。
摩擦调节剂用以抑制磨料颗粒的磨损。作为摩擦调节剂,可使用各种表面活性剂、水溶性高分子。作为表面活性剂,可列举出二醇类等非离子表面活性剂。作为水溶性高分子,可列举出聚丙烯酸等羧酸类高分子化合物、聚乙二醇等亚烷基二醇类高分子化合物。
消泡剂用以防止加工液从设置于加工室内的加工液罐溢出。作为消泡剂,例如可列举出硅油、氟硅油、氟烷基醚等。
作为金属钝化剂,可列举出咪唑啉、嘧啶衍生物、噻二唑、苯并三唑等。
杀菌剂(防腐剂)用以防止锯丝等腐蚀。作为杀菌剂(防腐剂),可列举出对羟基苯甲酸酯类(尼泊金类)、苯甲酸、水杨酸、山梨酸、脱氢醋酸、对甲苯磺酸及它们的盐类、苯氧乙醇等。
pH调节剂用以将本发明的加工液的pH调整为3以上且9以下的范围。pH调节剂分为酸性调节剂和碱性调节剂。作为酸性调节剂,可列举出聚丙烯酸、异壬酸等酸性化合物。作为碱性调节剂,可列举出N-甲基二乙醇胺、环己基二乙醇胺等碱性化合物。
增稠剂用以提高本发明的加工液的粘度,提高在锯丝上的附着性。由此可抑制磨料颗粒的磨损。作为增稠剂,可列举出与摩擦调节剂同样的羧酸类高分子化合物、亚烷基二醇类高分子化合物等。
分散剂用以抑制切粉在线锯上的堆积。作为分散剂,可列举出与上述摩擦调节剂同样的各种表面活性剂、水溶性高分子等。
这些添加剂的含量只要根据目的适当设定即可,以加工液总量为基准,这些添加剂的合计量通常为0.01质量%以上至30质量%左右。
需说明的是,本发明的加工液虽然示出了在切断硅锭时使用的组成,但也可用于硅晶片的研磨。
另外,本发明的加工液的制备方法无特殊限定。从易于运输、销售的观点出发,例如可制备处于水的含量少的浓缩状态的加工液,在使用前加入水调整浓度。
而且,本发明的加工液虽然说明了以水为主要成分的组成,但也可以二醇类为主要成分。
实施例
接着,通过实施例对本发明进行更详细的说明,但本发明并不因这些实例而受到任何限定。
[实施例1~3、比较例1~5]
制备如表1所示组成的加工液,实施各种试验而进行评价。以下示出加工液所含有的成分和各种试验项目。表1中一并示出评价结果和加工液的pH。
<加工液的成分>
(1)水:自来水
(2)丙二醇
(3)含氮化合物:苯并三唑(ジプロ化成(株)制シーテックBT)
(4)含氮化合物:3,4-二氢-3-羟基-4-氧代-1,2,3-苯并三嗪
(5)含氮化合物:咪唑
(6)含氮化合物:3,4-二氢-2H-吡啶并(1,2-a)嘧啶-2-酮
(7)含氮化合物:N-甲基二乙醇胺(日本乳化剂(株)制氨基醇MDA)
(8)十二烷二酸(インビスタジャパン(株)制注册商标CorfreeM1)
<试验项目>
(1)往复运动摩擦试验
1.评价方法
根据以下试验条件,通过测定摩擦系数来进行评价。
2.试验条件
试验机:(株)オリエンテック制F-2100
球:3/16英寸SUJ2
试验板:多晶硅
滑动速度:20mm/s
滑动距离:2cm
负重:200g。
(2)氢产生试验
1.评价方法
一边将1600g的加工液灌到镀Ni金刚石锯丝(丝径为0.12mm,粒度为12μm以上且25μm以下)上,一边根据下列切断条件切断多晶硅(□156mm)。循环使用加工液,进行4次切断。由此制备含有活性硅切粉的加工液。将100g的含有切粉的加工液静置,通过水上置换法将产生的气体回收于量筒中,根据下列试验条件进行定量。需说明的是,对于比较例1、2,因摩擦系数大而未进行试验。
2.切断条件
线锯:DWT公司制CS810(单线锯)
锯丝使用量:30m(通过往复运动重复使用)
锯丝移动速度:平均值340m/min
锯丝挠曲设定:5°
3.试验条件
试验时间:3日
静置的加工液量:100g
量筒容量:200ml。
(3)节约资源性试验
1.评价方法
根据下列评价标准,通过加工液中含有的水的含量评价加工液。
2.评价标准
水的含量为80%以上:A
水的含量为70%以上且不足80%:B
水的含量为60%以上且不足70%:C
水的含量为不足60%:D。
[表1]
<评价结果>
根据表1中的实施例1~3的结果,本发明的加工液因含有所规定的含氮化合物而可降低摩擦系数。可知由此可抑制磨料颗粒的磨损,防止磨料颗粒的脱落。另外,可知本发明的加工液可降低氢的产生量,也可防止加工液从加工液罐溢出。此外,本发明的加工液由于以水为主要成分,所以环境负担小,节约资源性优异。
另一方面,在比较例1~5中,由于不含本发明中为必须的具有所规定pH的含氮化合物作为摩擦调节剂,所以无法抑制摩擦系数和氢产生量的增大两者。另外,在比较例4中,由于以丙二醇为主要成分,所以环境负担大,节约资源性不足。
产业上的可利用性
本发明的硅晶片加工液和硅晶片加工方法适用于利用固定有磨料颗粒的锯丝来切断硅锭。
Claims (19)
1.硅晶片加工液,其特征在于,所述硅晶片加工液为掺混含有含氮化合物的摩擦调节剂而成的硅晶片加工液,
所述含氮化合物在将与水的质量比(所述含氮化合物/所述水)设为1/99时pH为2以上且8以下,
所述含氮化合物为杂环化合物,
所述杂环化合物为苯并三唑、3,4-二氢-3-羟基-4-氧代-1,2,3-苯并三嗪、吲唑、苯并咪唑和它们的衍生物中的至少任一种,
所述硅晶片加工液的pH为3以上且9以下,
以该硅晶片加工液总量为基准,所述含氮化合物的含量为0.05质量%以上且10质量%以下,在利用固定有磨料颗粒的锯丝的硅晶片加工中使用。
2.权利要求1的硅晶片加工液,其特征在于,
所述杂环化合物为苯并三唑和3,4-二氢-3-羟基-4-氧代-1,2,3-苯并三嗪中的至少任一种。
3.权利要求1的硅晶片加工液,其特征在于,
所述硅晶片加工液的pH为5以上且7以下。
4.权利要求1的硅晶片加工液,其特征在于,
所述硅晶片加工液的pH为3以上且7以下。
5.权利要求1的硅晶片加工液,其特征在于,
所述硅晶片加工液的pH为5以上且9以下。
6.权利要求1的硅晶片加工液,其特征在于,
以该硅晶片加工液总量为基准,所述含氮化合物的含量为0.1质量%以上且5质量%以下。
7.权利要求1的硅晶片加工液,其特征在于,
以该硅晶片加工液总量为基准,所述含氮化合物的含量为0.05质量%以上且5质量%以下。
8.权利要求1的硅晶片加工液,其特征在于,
以该硅晶片加工液总量为基准,所述含氮化合物的含量为0.1质量%以上且10质量%以下。
9.权利要求1或2的硅晶片加工液,其特征在于,
以该硅晶片加工液总量为基准,所述硅晶片加工液含有50质量%以上且99.95质量%以下的水。
10.权利要求9的硅晶片加工液,其特征在于,
以该硅晶片加工液总量为基准,所述硅晶片加工液含有60质量%以上且95质量%以下的水。
11.权利要求9的硅晶片加工液,其特征在于,
以该硅晶片加工液总量为基准,所述硅晶片加工液含有60质量%以上且99.95质量%以下的水。
12.权利要求9的硅晶片加工液,其特征在于,
以该硅晶片加工液总量为基准,所述硅晶片加工液含有50质量%以上且95质量%以下的水。
13.权利要求1或2的硅晶片加工液,其特征在于,
所述含氮化合物在将与水的质量比(所述含氮化合物/所述水)设为1/99时pH为3以上且7以下。
14.权利要求8的硅晶片加工液,其特征在于,
所述含氮化合物在将与水的质量比(所述含氮化合物/所述水)设为1/99时pH为4以上且6以下。
15.权利要求8的硅晶片加工液,其特征在于,
所述含氮化合物在将与水的质量比(所述含氮化合物/所述水)设为1/99时pH为3以上且6以下。
16.权利要求8的硅晶片加工液,其特征在于,
所述含氮化合物在将与水的质量比(所述含氮化合物/所述水)设为1/99时pH为4以上且7以下。
17.权利要求1或2的硅晶片加工液,其特征在于,
所述硅晶片加工液中配合有摩擦调节剂、消泡剂、金属钝化剂、杀菌剂、防腐剂、粘度调节剂、pH调节剂、增稠剂和分散剂中的至少任一种作为添加剂。
18.权利要求17的硅晶片加工液,其特征在于,
以硅晶片加工液总量为基准,所述添加剂的总含量为0.01质量%以上且30质量%以下。
19.硅晶片加工方法,其特征在于,所述硅晶片加工方法为使用掺混含有含氮化合物的摩擦调节剂而成的硅晶片加工液,利用固定有磨料颗粒的锯丝来加工硅晶片的硅晶片加工方法,
所述含氮化合物在将与水的质量比(所述含氮化合物/所述水)设为1/99时pH为2以上且8以下,
所述含氮化合物为杂环化合物,
所述杂环化合物为苯并三唑、3,4-二氢-3-羟基-4-氧代-1,2,3-苯并三嗪、吲唑、苯并咪唑和它们的衍生物中的至少任一种,
所述硅晶片加工液的pH为3以上且9以下,
以该硅晶片加工液总量为基准,所述含氮化合物的含量为0.05质量%以上且10质量%以下。
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PCT/JP2011/068899 WO2012026437A1 (ja) | 2010-08-24 | 2011-08-23 | シリコンウェハ加工液およびシリコンウェハ加工方法 |
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