CN103050467A - 封装结构及其制造方法 - Google Patents

封装结构及其制造方法 Download PDF

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Publication number
CN103050467A
CN103050467A CN2012103876475A CN201210387647A CN103050467A CN 103050467 A CN103050467 A CN 103050467A CN 2012103876475 A CN2012103876475 A CN 2012103876475A CN 201210387647 A CN201210387647 A CN 201210387647A CN 103050467 A CN103050467 A CN 103050467A
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lead frame
transport element
metal substrate
encapsulating structure
structure according
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CN103050467B (zh
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吕保儒
李正人
江凯焩
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Cyntec Co Ltd
Qiankun Science and Technology Co Ltd
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Qiankun Science and Technology Co Ltd
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Abstract

本发明揭示一种由金属基板和导线架结合组成的封装结构。在一具体实施中，在该金属基板中形成一凹洞，且具有至少一第一输入/输出端子的一第一传导元件于该凹洞中接合。在该金属基板上形成一导线架，且此导线架包含复数个电性连接端用来连接该第一传导元件的至少一第一输入/输出端子。在另一具体实施中，在该导线架的空隙中设置另一传导元件。本发明也揭示一种由金属基板和导线架结合组成的封装结构的制造方法。

Description

封装结构及其制造方法
技术领域
本发明涉及一种封装结构，特别指一种由金属基板和导线架结合组成的封装结构。
背景技术
导线架(lead frame)是一种被应用在集成电路(IC)封装的材料，其具有不同的型式，例如四边接脚扁平式封装(QFP)、薄小外型封装(TSOP)、小外型晶体管(SOT)或J型接脚小外型封装(SOJ)。凭借组装和互相连结一半导体元件至一导线架来构成封胶(molding)的半导体元件，此结构常常使用塑性材料封胶。一导线架由金属带状物(metal ribbon)构成，且具有一桨状物(paddle)(也为已知的晶粒桨状物(die paddle)，晶粒附加标签(die-attach tab)，或者岛状物(island))，一半导体元件设置在该桨状物上。前述导线架具有复数个导线(lead)不与该桨状物重叠排列。
传统上，集成电路晶片使用晶粒结合(die bond)的方式设置在导线架上。前述晶粒结合的制造程序包含很多步骤：打线(wire bond)、集成电路晶片封胶、切单后测试等等。凭借整合或封装导线架和其他元件，例如电感或电容，可以制造不同的产品。因为制程容易、成熟且信赖性良好，为目前最主要制程之一。然而，这种传统制程有很多的缺点，其包含：a.制程成本高，且须使用模具来完成封胶，因此增加模具开发的成本；b.设计面积只能平面而缺乏设计弹性，产品无法缩小；c.只能封装成单颗元件，并不具模块化的能力；d.散热表现不佳。
因此，本发明提出了一个封装结构及其制造方法来克服上述的缺点。
发明内容
针对现有技术的不足，本发明的目的在于：提供一种封装结构及其制造方法，解决现有结构与方法存在的成本高、不具模块化的能力以及散热表现不佳等问题。
为实现上述目的，本发明采用的技术方案是：
一种封装结构，其特征在于，包含：
一金属基板；
一凹洞，形成在该金属基板上；
一第一传导元件，设在该凹洞内，且具有至少一第一输入/输出端；以及
一第一导线架，设在该金属基板上，其中该第一导线架包含复数个第一电性连接端用来连接该第一传导元件的该至少一第一输入/输出端。
该金属基板具有复数个接脚。
在较佳的技术方案中，进一步包含：
一空隙，形成在该第一导线架中；
一第二传导元件，设在该空隙中，且具有至少一第二输入/输出端，其中该金属基板包含复数个第二电性连接端用来连接该第二传导元件的该至少一第二输入/输出端。
在较佳的技术方案中，该第二传导元件是一电阻。
在较佳的技术方案中，进一步包含一第二导线架，其中该第一导线架与第二导线架设于该金属基板的相对面。
在较佳的技术方案中，该金属基板具有至少一第一空隙，且一第一填充层填入该至少一第一空隙。
在较佳的技术方案中，该第一导线架具有至少一第二空隙，且一第二填充层填入该至少一第二空隙。
在较佳的技术方案中，该第二填充层为一绝缘层。
在较佳的技术方案中，该第一填充层与第二填充层由单一层形成。
在较佳的技术方案中，进一步包含：
一第二传导元件置于该第一导线架上，该第二传导元件具有至少一第二输入/输出端，其中该第一导线架进一步包含复数个第二电性连接端用来连接该第二传导元件的该至少一第二输入/输出端。
在较佳的技术方案中，该金属基板由铜、银或锡其中至少一个所组成。
在较佳的技术方案中，该第一传导元件包含集成电路晶片、金属氧化层场效晶体管、绝缘栅双极晶体管、二极管、电感、电容或电阻其中至少一个。
在较佳的技术方案中，该金属基板是复数个次金属基板所组成。
在较佳的技术方案中，该第一导线架是复数个次导线架所组成。
在较佳的技术方案中，进一步包含一传导层，其设在该第一导线架上。
为实现上述目的，本发明采用的技术方案是：
一种封装结构的制造方法，其特征在于，该方法包含了下列步骤：
a.提供一金属基板；
b.在该金属基板上形成一凹洞；
c.在该凹洞中设置一第一传导元件，该第一传导元件具有至少一第一输入/输出端子；以及
d.在该金属基板上形成一导线架，其中该导线架包含复数个电性连接端用来连接该第一传导元件的该至少一第一输入/输出端。
在较佳的技术方案中，该金属基板具有复数个接脚。
在较佳的技术方案中，该导线架包含一空隙，且步骤d进一步包含在该空隙中设置一第二传导元件。
在较佳的技术方案中，该第二传导元件是一电阻。
在较佳的技术方案中，该导线架包含一空隙，该方法进一步包含下列步骤：
e.在该导线架上形成一绝缘层，该绝缘层填入该空隙。
与现有技术相比较，本发明具有的有益效果是：
1.本发明提供一个封装结构，其包含在金属基板上形成一凹洞，使具有至少一第一输入/输出端子的一第一传导元件于该凹洞中接合；在该金属基板上形成一导线架(例如：向下设置(down set))，在该导线架上设一第二传导元件，该第二传导元件包含至少一第二输入/输出端子，其中该导线架包含复数个电性连接端用来连接该第一传导元件的至少一第一输入/输出端子和该第二传导元件的至少一第二输入/输出端子。由于基板为金属材质，因此具有更佳的散热以及电传导。再者，因为金属基板与导线架直接结合，所以不需复杂的制程。
第一传导元件主要封入在金属基板中，而不是用塑性材料封胶；且凭借表面粘着技术(SMT)的技术，在金属基板上放置一第二传导元件。前述第一传导元件和第二传导元件可以是主动元件，例如集成电路晶片(IC chip)、金属氧化层场效晶体管、绝缘栅双极晶体管(IGBT)或二极管等等，或是被动元件，例如电阻、电容或电感等等。第一传导元件和第二传导元件与金属基板(或接脚)直接电性连结，所以不需要额外的印刷电路板作为连结用。另外，利用点胶(dispensing)或涂胶(gluing)取代封胶用来保护第一传导元件。因此，不需要额外的模具开发进而可以节省时间和成本，也较容易设计。因此和在传统集成电路封装结构中使用的导线架和封胶比较，本发明的结构可以制作元件间最短的电路路径，故结构整体的阻抗降低且电性效率增加。
2.本发明提供一个封装结构，其包含在金属基板上形成一凹洞，使具有至少一第一输入/输出端子的一第一传导元件于该凹洞中接合；在该金属基板上形成一导线架(例如：向下设置(down set))，在该导线架上形成一第二凹洞，一第二传导元件具有至少一第二输入/输出端子设于该第二凹洞；一第三传导元件具有至少一第三输入/输出端子设于该导线架上，其中该导线架包含复数个第一电性连接端用来连接该第一传导元件的至少一第一输入/输出端子和该第二传导元件的至少一第二输入/输出端子；其中该金属基板包含复数个第二电性连接端用来连接该第三传导元件的至少一第三输入/输出端子。
3.本发明提供一封装结构的制造方法：提供一金属基板，在该金属基板形成一凹洞；在该凹洞中设置一传导元件，该传导元件具有至少一输入/输出端子；在该金属基板上形成一导线架，其中该导线架包含复数个电性连接端用来连接该传导元件的至少一输入/输出端。
附图说明
图1A为此封装结构的剖面示意图；
图1B为图1A的结构上具有一传导元件的一产品结构示意图；
图1C为图1A的结构上具有一传导元件的另一产品结构示意图；
图1D为另一封装结构的剖面示意图
图2A-图2F为制造图1B的封装结构流程剖面示意图；
图3A-图3H为制造图1C的另一封装结构流程剖面示意图。
附图标记说明：10、20封装结构；11、111、211金属基板；12、112、212导线架；13、113、213填充层；14、114、214绝缘层；15、115、215第一传导元件；16、116、216凹洞；17、41金属基板上表面；18、42金属基板下表面；19、119、151、219空隙；21、121、221第一垫片；22、122、222第二垫片；23、123、224第二传导元件；24、223第三传导元件；25、225薄绝缘层；226开孔。
具体实施方式
本发明的详细说明于随后描述，这里所描述的较佳实施例是作为说明和描述的用途，并非用来限定本发明的范围。
本发明揭示一种由金属基板和导线架结合组成的封装结构。图1A为此封装结构10的剖面示意图。此结构10包含一金属基板11、一导线架12、一填充层13、一绝缘层14以及一第一传导元件15。
金属基板11具有复数个接脚(未示之)可做为输入/输出端子，在接脚的下方放置有复数个垫片(pad)22用来外部电性连结。该金属基板11可以是具有至少一个空隙19的金属架，该金属架由移除金属基板11一个或多个部分而形成。该金属基板11也可以是导线架或是任何其他相等的结构。该金属基板11可由铜、银或锡至少其中一个组成。在一个具体实施中，该金属基板11可以无空隙存在或是具有至少一个空隙19。该空隙19可填入任何适合的填充层13，例如涂胶层(gluing layer)。金属基板11的外观和形状依垫片22的布局(layout)而定，且金属基板11的接脚经由垫片22电性连结至印刷电路板或另一个传导元件(未示之)，例如集成电路晶片(IC chip)、金属氧化层场效晶体管、绝缘栅双极晶体管(IGBT)、二极管、电阻、扼流线圈(choke)或电容等。
在该金属基板11上形成一凹洞16，并利用一般技术(例如：银胶)将传导元件15(例如：集成电路晶片(IC chip)、金属氧化层场效晶体管、绝缘栅双极晶体管(IGBT)、二极管、电阻、扼流线圈(choke)或电容)结合于凹洞16中。前述的凹洞16以不同的形式实现，例如，在一个具体实施中，该凹洞16形成于该金属基板11内部，在另一个具体实施中，该凹洞16具有一边和金属基板11的一边对齐，在更另一个具体实施中，该凹洞16具有两边和金属基板11的两边对齐。在一具体实施中，前述金属基板11是复数个次金属基板结合构成，然后在该金属基板11上形成该凹洞16。在一具体实施中，至少一个第一传导元件15结合于凹洞16中。在一具体实施中，该第一传导元件15的输入/输出端子凭借已知的技术，例如打线、金球结合、导线(凭借薄膜制程、印刷制程或电镀)或其结合，电性连接该导线架12。在一个具体实施中，该第一传导元件15的上表面17和金属基板11的上表面18位于同一水平面。
于金属基板11之上形成一导线架12(例如：向下设置(down set))。该导线架12包含复数个电性连接端用来连接该第一传导元件15的复数个接脚和输入/输出端子。在一个具体实施中，为了得到较佳的电性连接，在金属基板11上会设置至少一导线架12。该导线架12具有至少一空隙(未示之)。绝缘层14形成于导线架12之上，且填充该导线架12的空隙。在一个具体实施中，该填充层13与绝缘层14可为同一层。
图1B为图1A的结构10上具有一第二传导元件23的一产品结构20示意图。与结构10相比，该产品结构20进一步包含一第二传导元件23。凭借已知技术例如薄膜制程、印刷制程或其结合，在导线架12上形成复数个第一垫片21，然后在该第一垫片21上放置该第二传导元件23(例如：集成电路晶片(IC chip)、金属氧化层场效晶体管、绝缘栅双极晶体管(IGBT)、二极管、电阻、扼流线圈(choke)或电容)。在一个具体实施中，为了得到较佳的电性连接，可在第一垫片21和导线架12之间设置至少一传导层(未示之)。金属基板11下方可设置复数个第二垫片22(或接脚)用来外部电性连接。该第二垫片22可由任何导电的材料组成，例如锡、镍/金合金或其类似物等。该结构20可放置于印刷电路板或与另一传导元件(未示之)(例如：集成电路晶片(IC chip)、金属氧化层场效晶体管、绝缘栅双极晶体管(IGBT)、二极管、电阻、扼流线圈(choke)或电容)电性连接，如此该第二传导元件23可经由包含该第一垫片21、该导线架12、该金属基板11(或接脚)和该第二垫片22等传导路径，与该印刷电路板或另一传导元件电性连接。值得说明的是，电性连接方式并不仅局限于前述方式，其根据不同种类的产品和金属基板的制程而有不同的电性连接变化。电性连接方式包含很多方法，但不局限于上面所述，而现有技术者易了解该电性连接方式，在此不进一步描述。
在一个具体实施中，如图1C所示，设置一第三传导元件24于该导线架12的空隙。该第三传导元件凭借一薄绝缘层25与该导线架12隔离。于另一个具体实施如图1D所示，该些导线架12可置于该金属基板11的上表面41及下表面42。
图2A-图2F为制造图1B的封装结构20流程剖面示意图。
如图2A所示，一金属基板111具有至少一空隙119，且至少一凹洞116形成于该金属基板111。如图2B所示，在凹洞116中设置一具有至少一第一输入/输出端子(未示之)的第一传导元件115。然后于凹洞116的剩余部分填充任何适合的材料。如图2C所示，填充一填充层113于该金属基板111的空隙119，例如一涂胶层。如图2D所示，在金属基板111上形成一导线架112(例如：向下设置(down set))。该导线架112可电性连结该第一传导元件115的输入/输出端子和一部分该金属基板111。该导线架112具有至少一空隙151。如图2E所示，绝缘层114形成于导线架112之上，且填充该导线架112的空隙151。该绝缘层114可完整保护该导线架112。该绝缘层114的高度超过该导线架112的高度，如此可在该绝缘层114之上进行后续制程，例如薄膜制程或印刷制程。在一具体实施中，形成图2D中的导线架112和形成一绝缘层114的次序是任意的。在一具体实施中，该填充层113和该绝缘层114可以是相同的或者在同一制程步骤中一并形成。接着，如图2F所示，该绝缘层114可形成开孔(未示之)用来放置复数个第一垫片121，且在该第一垫片121设置至少一第二传导元件123。复数个第二垫片122放置于该金属基板111(或接脚)的下，用来达成上面所述的外部电性连接。该第二传导元件123可经由包含该第一垫片121、该导线架112、该金属基板111(或接脚)和该第二垫片122等传导路径，与该印刷电路板或另一传导元件电性(未示之)连接。
图3A-图3F为制造图1C的另一封装结构30流程剖面示意图。
如图3A所示，一金属基板211具有至少一空隙219，且至少一凹洞216形成于该金属基板211。如图3B所示，在凹洞216中设置一具有至少一第一输入/输出端子(未示之)的第一传导元件215。然后，于凹洞216的剩余部分填充任何适合的材料。如图3C所示，填充一填充层213于该金属基板211的空隙219，例如一涂胶层。如图3D所示，在金属基板211上设置一第二传导元件224。如图3E所示，为了隔离该第二传导元件224与导线架212，沈积一薄绝缘层225覆盖该第二传导元件224，此将于后续描述。为了改善电性，该第二传导元件224与该金属基板211电性连接。该第二传导元件224可以是主动元件或是被动元件，例如金属氧化层场效晶体管、绝缘栅双极晶体管(IGBT)二极管、电阻、扼流线圈(choke)或电容等等。在一个较佳实施中，该第二传导元件224是一电阻。然后，在该薄绝缘层225形成开孔226以曝露该第一传导元件215的输入/输出端子和一部分的金属基板211。如图3F所示，形成一导线架212(例如：向下设置(down set))覆盖于第二传导元件224上，使得该导线架212可经由该开孔226电性连接该第一传导元件215的输入/输出端子和一部分的金属基板211。如图3G所示，形成一厚绝缘层214覆盖该第二传导元件224和一部分该薄绝缘层225。该绝缘层214可完整保护该导线架212。该绝缘层214的高度超过该导线架212的高度，如此可在该绝缘层214之上进行后续制程，例如薄膜制程或印刷制程。在一具体实施中，该填充层213和该绝缘层214可以是相同的或者在同一制程步骤中一并形成。接着，如图3H所示，该绝缘层214可形成开孔(未示之)用来放置复数个第一垫片221，且在该第一垫片221上设置一第三传导元件223。复数个第二垫片222放置于该金属基板211(或接脚)的下，用来外部电性连接。该第三传导元件223可经由包含该第一垫片221、该导线架212、该金属基板211(或接脚)和该第二垫片222等传导路径，与该印刷电路板或另一传导元件电性连接。
从上述实施例描述而知本发明的结构和制造方法可以提供很多的优点，包含：
1.基板由金属构成且其有较佳的散热和电传导的特性。
2.不需使用嵌入式树脂，不需开发额外的模具，节省时间和成本。
3.因为金属基板与导线架直接结合，制程简单。
4.与一般导线架和集成电路封装结构相比，由于本发明的结构可以最短电性路径连接各组成元件，所以能降低总阻抗和增进电性效率，因此有较佳的电性表现。
以上说明对本发明而言只是说明性的，而非限制性的，本领域普通技术人员理解，在不脱离权利要求所限定的精神和范围的情况下，可作出许多修改、变化或等效，但都将落入本发明的保护范围之内。

Claims (20)

1.一种封装结构，其特征在于，包含：
一金属基板；
一凹洞，形成在该金属基板上；
一第一传导元件，设在该凹洞内，且具有至少一第一输入/输出端；以及
一第一导线架，设在该金属基板上，其中该第一导线架包含复数个第一电性连接端用来连接该第一传导元件的该至少一第一输入/输出端。
2.根据权利要求1所述的封装结构，其特征在于：该金属基板具有复数个接脚。
3.根据权利要求1所述的封装结构，其特征在于，进一步包含：
一空隙，形成在该第一导线架中；
一第二传导元件，设在该空隙中，且具有至少一第二输入/输出端，其中该金属基板包含复数个第二电性连接端用来连接该第二传导元件的该至少一第二输入/输出端。
4.根据权利要求3所述的封装结构，其特征在于：该第二传导元件是一电阻。
5.根据权利要求1所述的封装结构，其特征在于：进一步包含一第二导线架，其中该第一导线架与第二导线架设于该金属基板的相对面。
6.根据权利要求1所述的封装结构，其特征在于：该金属基板具有至少一第一空隙，且一第一填充层填入该至少一第一空隙。
7.根据权利要求6所述的封装结构，其特征在于：该第一导线架具有至少一第二空隙，且一第二填充层填入该至少一第二空隙。
8.根据权利要求7所述的封装结构，其特征在于：该第二填充层为一绝缘层。
9.根据权利要求7所述的封装结构，其特征在于：该第一填充层与第二填充层由单一层形成。
10.根据权利要求1所述的封装结构，其特征在于，进一步包含：
一第二传导元件置于该第一导线架上，该第二传导元件具有至少一第二输入/输出端，其中该第一导线架进一步包含复数个第二电性连接端用来连接该第二传导元件的该至少一第二输入/输出端。
11.根据权利要求1所述的封装结构，其特征在于：该金属基板由铜、银或锡其中至少一个所组成。
12.根据权利要求1所述的封装结构，其特征在于：该第一传导元件包含集成电路晶片、金属氧化层场效晶体管、绝缘栅双极晶体管、二极管、电感、电容或电阻其中至少一个。
13.根据权利要求1所述的封装结构，其特征在于：该金属基板是复数个次金属基板所组成。
14.根据权利要求1所述的封装结构，其特征在于：该第一导线架是复数个次导线架所组成。
15.根据权利要求1所述的封装结构，其特征在于：进一步包含一传导层，其设在该第一导线架上。
16.一种封装结构的制造方法，其特征在于，该方法包含了下列步骤：
a.提供一金属基板；
b.在该金属基板上形成一凹洞；
c.在该凹洞中设置一第一传导元件，该第一传导元件具有至少一第一输入/输出端子；以及
d.在该金属基板上形成一导线架，其中该导线架包含复数个电性连接端用来连接该第一传导元件的该至少一第一输入/输出端。
17.根据权利要求16所述的方法，其特征在于：该金属基板具有复数个接脚。
18.根据权利要求16所述的方法，其特征在于：该导线架包含一空隙，且步骤d进一步包含在该空隙中设置一第二传导元件。
19.根据权利要求18所述的方法，其特征在于：该第二传导元件是一电阻。
20.根据权利要求16所述的方法，其特征在于：该导线架包含一空隙，该方法进一步包含下列步骤：
e.在该导线架上形成一绝缘层，该绝缘层填入该空隙。
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