CN103003364B - 可固化的有机聚硅氧烷组合物及光学半导体器件 - Google Patents

可固化的有机聚硅氧烷组合物及光学半导体器件 Download PDF

Info

Publication number
CN103003364B
CN103003364B CN201180028769.9A CN201180028769A CN103003364B CN 103003364 B CN103003364 B CN 103003364B CN 201180028769 A CN201180028769 A CN 201180028769A CN 103003364 B CN103003364 B CN 103003364B
Authority
CN
China
Prior art keywords
sio
component
methyl
composition
ingredient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201180028769.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN103003364A (zh
Inventor
吉武诚
山川美惠子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dupont Dongli Special Materials Co ltd
Original Assignee
Dow Corning Toray Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Toray Co Ltd filed Critical Dow Corning Toray Co Ltd
Publication of CN103003364A publication Critical patent/CN103003364A/zh
Application granted granted Critical
Publication of CN103003364B publication Critical patent/CN103003364B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/20Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/296Organo-silicon compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/854Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/12Polysiloxanes containing silicon bound to hydrogen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/14Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Led Device Packages (AREA)
CN201180028769.9A 2010-06-29 2011-06-28 可固化的有机聚硅氧烷组合物及光学半导体器件 Active CN103003364B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010147690A JP5534977B2 (ja) 2010-06-29 2010-06-29 硬化性オルガノポリシロキサン組成物および光半導体装置
JP2010-147690 2010-06-29
PCT/JP2011/065247 WO2012002560A1 (en) 2010-06-29 2011-06-28 Curable organopolysiloxane composition and optical semiconductor device

Publications (2)

Publication Number Publication Date
CN103003364A CN103003364A (zh) 2013-03-27
CN103003364B true CN103003364B (zh) 2014-10-08

Family

ID=44477657

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180028769.9A Active CN103003364B (zh) 2010-06-29 2011-06-28 可固化的有机聚硅氧烷组合物及光学半导体器件

Country Status (7)

Country Link
US (1) US8772812B2 (enExample)
EP (1) EP2588538B1 (enExample)
JP (1) JP5534977B2 (enExample)
KR (1) KR101722089B1 (enExample)
CN (1) CN103003364B (enExample)
TW (1) TWI512044B (enExample)
WO (1) WO2012002560A1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5680889B2 (ja) 2010-06-29 2015-03-04 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および光半導体装置
JP5693063B2 (ja) * 2010-07-01 2015-04-01 積水化学工業株式会社 光半導体装置用封止剤及びそれを用いた光半導体装置
JP5817377B2 (ja) * 2011-09-20 2015-11-18 住友ベークライト株式会社 シリコーンゴム系硬化性組成物、シリコーンゴムの製造方法、シリコーンゴム、成形体および医療用チューブ
JP6057503B2 (ja) * 2011-09-21 2017-01-11 東レ・ダウコーニング株式会社 光半導体素子封止用硬化性シリコーン組成物、樹脂封止光半導体素子の製造方法、および樹脂封止光半導体素子
JP5706357B2 (ja) * 2012-02-24 2015-04-22 富士フイルム株式会社 基板モジュールおよびその製造方法
US9200795B2 (en) * 2012-06-01 2015-12-01 Citizen Holdings Co., Ltd. Lighting device
WO2014050318A1 (ja) * 2012-09-27 2014-04-03 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 光半導体素子封止用シリコーン組成物および光半導体装置
JP6081774B2 (ja) * 2012-10-30 2017-02-15 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
EP2918638B1 (en) 2012-11-09 2017-09-06 Sumitomo Seika Chemicals Co. Ltd. Silicone resin composition, cured silicone resin, and sealed optical semiconductor element
US9470395B2 (en) 2013-03-15 2016-10-18 Abl Ip Holding Llc Optic for a light source
CA2911523C (en) 2013-05-10 2018-10-02 Abl Ip Holding Llc Silicone optics
JP6467125B2 (ja) * 2013-06-27 2019-02-06 株式会社カネカ 硬化性樹脂組成物、該組成物を硬化させてなる硬化物
KR102189563B1 (ko) * 2013-08-19 2020-12-11 스미또모 세이까 가부시키가이샤 부가 경화형 실리콘 수지 조성물, 부가 경화형 실리콘 수지 경화물 및 광 반도체 소자 봉지체
CN105555873B (zh) 2013-08-20 2018-09-14 住友精化株式会社 缩合固化型有机硅树脂组合物、缩合固化型有机硅树脂固化物和光半导体元件密封体
WO2015083446A1 (ja) * 2013-12-06 2015-06-11 住友精化株式会社 付加硬化型シリコーン樹脂組成物、付加硬化型シリコーン樹脂硬化物、及び、光半導体素子封止体
JP6258048B2 (ja) * 2014-01-28 2018-01-10 信越化学工業株式会社 有機変性シリコーン樹脂組成物
WO2015129140A1 (ja) * 2014-02-28 2015-09-03 住友精化株式会社 付加硬化型シリコーン樹脂組成物、付加硬化型シリコーン樹脂硬化物、及び、光半導体素子封止体
TWI506058B (zh) 2014-03-18 2015-11-01 Benq Materials Corp 可固化矽樹脂組成物
CN106715591A (zh) * 2014-06-03 2017-05-24 道康宁东丽株式会社 可固化有机硅组合物及光半导体装置
JP6592438B2 (ja) * 2014-07-30 2019-10-16 住友精化株式会社 シリコーン樹脂組成物、シリコーン樹脂硬化物、及び、光半導体素子封止体
EP3133105B1 (en) 2015-07-31 2020-12-09 Shin-Etsu Chemical Co., Ltd. Hydrosilyl-containing organopolysiloxane, making method, addition curable silicone composition, and semiconductor package
TWI705582B (zh) * 2016-01-15 2020-09-21 日商西鐵城時計股份有限公司 縮合反應型晶粒接合劑、led發光裝置及其製造方法
JP6776954B2 (ja) * 2016-04-15 2020-10-28 信越化学工業株式会社 付加硬化性シリコーン樹脂組成物
JP6702224B2 (ja) 2017-02-17 2020-05-27 信越化学工業株式会社 付加硬化性シリコーン樹脂組成物及び光半導体装置用ダイアタッチ材
JP6884458B2 (ja) 2017-02-27 2021-06-09 デュポン・東レ・スペシャルティ・マテリアル株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
TWI762649B (zh) 2017-06-26 2022-05-01 日商杜邦東麗特殊材料股份有限公司 黏晶用固化性矽組合物
TWI791554B (zh) * 2017-07-31 2023-02-11 美商陶氏有機矽公司 可固化有機聚矽氧烷組成物及光學半導體裝置
CN109749461A (zh) * 2018-12-30 2019-05-14 苏州桐力光电股份有限公司 一种光学透明硅树脂
JP7562201B2 (ja) * 2019-07-30 2024-10-07 デュポン・東レ・スペシャルティ・マテリアル株式会社 ホットメルト性硬化性シリコーン組成物、封止剤、フィルム、光半導体素子
JP7094926B2 (ja) 2019-09-02 2022-07-04 信越化学工業株式会社 熱硬化性シリコーン樹脂組成物及び光半導体装置用ダイアタッチ材
JPWO2022004464A1 (enExample) 2020-06-30 2022-01-06
TWI898121B (zh) * 2021-03-23 2025-09-21 日商陶氏東麗股份有限公司 有機聚矽氧烷組成物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6124407A (en) * 1998-10-28 2000-09-26 Dow Corning Corporation Silicone composition, method for the preparation thereof, and silicone elastomer
CN101300305A (zh) * 2005-11-09 2008-11-05 陶氏康宁东丽株式会社 可固化的有机硅组合物
CN101796139A (zh) * 2007-07-31 2010-08-04 道康宁东丽株式会社 可固化的硅氧烷组合物

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5126399A (ja) * 1974-08-28 1976-03-04 Toray Silicone Co Garasusenishoryoekijoshirikoonsoseibutsu
EP1706428B1 (en) * 2004-01-22 2009-09-23 MERCK PATENT GmbH Anti-cancer antibodies with reduced complement fixation
JP4648099B2 (ja) 2005-06-07 2011-03-09 信越化学工業株式会社 ダイボンディング用シリコーン樹脂組成物
JP2007063538A (ja) 2005-08-03 2007-03-15 Shin Etsu Chem Co Ltd 発光ダイオード用付加硬化型シリコーン樹脂組成物
US7592399B2 (en) * 2005-12-19 2009-09-22 Shin-Etsu Chemical Co., Ltd. Epoxy/silicone hybrid resin composition and optical semiconductor device
JP2008120843A (ja) 2006-11-08 2008-05-29 Momentive Performance Materials Japan Kk 光透過性シリコーンレジンと光透過性シリコーンレジン組成物および光半導体装置
JP5273856B2 (ja) 2008-12-17 2013-08-28 西日本電信電話株式会社 Ip電話通信装置、ip電話通信中継装置およびip電話通信方法
JP5526823B2 (ja) * 2009-02-24 2014-06-18 信越化学工業株式会社 シリコーン樹脂で封止された光半導体装置
JP5680889B2 (ja) 2010-06-29 2015-03-04 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および光半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6124407A (en) * 1998-10-28 2000-09-26 Dow Corning Corporation Silicone composition, method for the preparation thereof, and silicone elastomer
CN101300305A (zh) * 2005-11-09 2008-11-05 陶氏康宁东丽株式会社 可固化的有机硅组合物
CN101796139A (zh) * 2007-07-31 2010-08-04 道康宁东丽株式会社 可固化的硅氧烷组合物

Also Published As

Publication number Publication date
KR101722089B1 (ko) 2017-03-31
CN103003364A (zh) 2013-03-27
WO2012002560A1 (en) 2012-01-05
JP2012012434A (ja) 2012-01-19
EP2588538B1 (en) 2014-04-30
JP5534977B2 (ja) 2014-07-02
US20130134609A1 (en) 2013-05-30
KR20130112712A (ko) 2013-10-14
EP2588538A1 (en) 2013-05-08
TW201213443A (en) 2012-04-01
TWI512044B (zh) 2015-12-11
US8772812B2 (en) 2014-07-08

Similar Documents

Publication Publication Date Title
CN103003364B (zh) 可固化的有机聚硅氧烷组合物及光学半导体器件
CN102959015B (zh) 可固化的有机聚硅氧烷组合物及光学半导体器件
CN102131874B (zh) 可固化的有机基聚硅氧烷组合物,光学半导体元件密封剂,和光学半导体器件
JP5769622B2 (ja) 硬化性オルガノポリシロキサン組成物、光半導体素子封止剤および光半導体装置
EP2958961B1 (en) Curable silicone composition, cured product threreof, and optical semiconductor device
KR20160013872A (ko) 반도체 장치 및 반도체 소자 밀봉용 경화성 실리콘 조성물
EP3662006B1 (en) Curable organopolysiloxane composition and optical semiconductor device
EP3587498B1 (en) Curable organopolysiloxane composition and semiconductor device
KR20230133239A (ko) 경화성 실리콘 조성물
CN110862802A (zh) 加成固化型有机硅组合物及半导体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 2-11-1 Chiyoda cho, Chiyoda ku, Tokyo, Japan

Patentee after: DuPont Dongli special materials Co.,Ltd.

Country or region after: Japan

Address before: Tokyo, Japan

Patentee before: DOW CORNING TORAY Co.,Ltd.

Country or region before: Japan