CN103000619A - 具有低的互连寄生的有高功率芯片和低功率芯片的系统 - Google Patents

具有低的互连寄生的有高功率芯片和低功率芯片的系统 Download PDF

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CN103000619A
CN103000619A CN2012103302841A CN201210330284A CN103000619A CN 103000619 A CN103000619 A CN 103000619A CN 2012103302841 A CN2012103302841 A CN 2012103302841A CN 201210330284 A CN201210330284 A CN 201210330284A CN 103000619 A CN103000619 A CN 103000619A
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power
chip
low
power chip
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亚伯拉罕·F·叶
乔·格雷科
尤恩·翟
约瑟夫·米纳卡佩利
约翰·Y·陈
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Nvidia Corp
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Nvidia Corp
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Abstract

一种IC系统包括位于靠近例如逻辑芯片的一个或多个较高功率芯片的例如存储器芯片的低功率芯片，而不经受过热结果。IC系统可以包括布置在封装基板上的高功率芯片和嵌入在封装基板中的低功率芯片来形成堆叠。因为封装基板的部分热绝缘低功率芯片与高功率芯片，因此低功率芯片能够嵌入在IC系统中与高功率芯片紧密靠近，而不会由高功率芯片使其过热。低功率芯片和高功率芯片之间的这样的紧密靠近有利地缩短了其间的互连路径长度，这提高了装置性能并且减小了IC系统中的互连寄生。

Description

具有低的互连寄生的有高功率芯片和低功率芯片的系统
技术领域
本发明的实施例总体上涉及集成电路芯片封装，更具体地，涉及具有高功率芯片和低功率芯片的系统。
背景技术
在集成电路（IC）芯片的封装中，通常要在包含在封装中芯片和其他装置的热管理和所述装置的性能之间进行权衡。具体地，通过将IC封装的存储器芯片、无源装置和其他低功率组件尽可能靠近IC封装中中央处理单元（CPU）和其他的高功率装置，来加速IC封装中的装置之间的通信并且减小封装寄生。然而，已知由较高功率的芯片所生成的热量不利地影响定位在附近的存储器芯片和其他装置。因此，当存储器芯片和无源装置合并到单个IC封装中时，将其直接堆叠在CUP或其他高功率芯片之上或之下，从发热方面来说是不可行的；这样的配置必然限制高功率芯片的功率或者冒了危害和/或者影响存储器芯片的性能的风险。通过在IC封装中将这样的芯片定位在高功率芯片旁边来将低功率芯片包括在单个IC封装中也是不可取的，因为这样水平分布的配置导致IC封装具有不实用的大的覆盖区（footprint）并且在低功率芯片和高功率芯片之间具有更长的互连路径。如前所述，本技术领域需要用于布置为彼此紧密靠近的高功率芯片和低功率芯片的IC封装，该IC封装防止低功率芯片过热。
发明内容
本发明的一个实施例阐述了一种IC系统，其中例如存储器芯片的低功率芯片位于靠近例如逻辑芯片的一个或多个较高功率芯片，而不经受过热结果。IC系统包括嵌入在封装基板中的低功率芯片和布置在封装基板上的高功率逻辑芯片来形成堆叠。因为封装基板的部分将嵌入的低功率芯片与高功率芯片热绝缘，所以低功率芯片能够定位为与高功率芯片靠近而不会过热。
本发明的一个优点在于，存储器芯片和其他低功率装置能够定位为与相同的IC系统中的高功率装置紧密靠近，而不会由高功率装置使其过热。这种紧密靠近有利地缩短了高功率和低功率装置之间的互连路径长度，这提高了装置性能并减小了IC系统中的互连寄生。
附图说明
因此，可以详细地理解本发明的上述特征，并且可以参考实施例得到对上面所简要概括的本发明的更具体的描述，其中一些实施例在附图中示出。然而，应当注意的是，附图仅用于示意本发明的典型实施例，由于本发明可以具有其他等效的实施例，因此附图不应被认为是对本发明范围的限制。
图1是根据本发明一个实施例的、集成电路（IC）系统的示意横剖面视图；
图2是根据本发明的一个实施例的、具有与高功率芯片部分重叠的多个低功率芯片的IC系统的示意横剖面视图；
图3是根据本发明的一个实施例的、具有多个高功率芯片的IC封装的示意横剖面视图；
图4是根据本发明实施例的、具有布置为与低功率芯片邻近的热分配层的IC封装的示意横剖面视图；以及
图5是根据本发明实施例的、具有布置在封装基板的一侧上的高功率芯片和以堆叠配置设置并嵌入在封装基板中的两个低功率芯片的IC封装的示意横剖面视图。
为了清楚，在适合的情况下，使用相同的参考数字表示附图之间共同的相同元素。这是考虑到，一个实施例的特征可结合到其他实施例中，而不需要进一步的复述。
具体实施方式
图1是根据本发明一个实施例的，集成电路（IC）系统100的示意横剖面视图。IC系统100包括多个IC芯片和/或其他独立的微电子组件，并且配置为将所述芯片和组件电和机械地连接至印刷电路板190。IC系统100包括纵向组合，即，高功率芯片101和低功率芯片102的堆叠配置，其中低功率芯片102与高功率芯片101热绝缘，并且因此不会被高功率芯片101显著地影响。
IC系统100包括高功率芯片101、低功率芯片102、封装基板110和多个封装引线180。高功率芯片101安装在封装基板110的一侧，并且低功率芯片102嵌入在封装基板110中，从而低功率芯片102与高功率芯片101热绝缘。因为封装基板110的部分作为热绝缘层，低功率芯片102能够定位为与高功率芯片101的大部分重叠而不被高功率芯片101所生成的热量不利地影响。封装引线180提供IC系统100和印刷电路板（PCB）190之间的电连接，并且可以是本领域已知的任意技术上可行的芯片封装电连接，包括球栅阵列（BGA）、针脚栅格阵列（PGA）等等。
高功率芯片101是高功率芯片，诸如中央处理单元（CPU）、图形处理单元（GPU）、应用处理器或其他逻辑装置、或在操作期间生成足以不利地影响位于IC系统100中的低功率芯片102或无源装置的性能的热量的任意IC芯片。“高功率芯片”如本文所限定的，是在正常操作期间生成至少10W或更多的热量的任意IC芯片。高功率芯片101是未包含在芯片载体或封装中的未密封的裸芯。高功率芯片101安装在封装基板110的表面118上，并电连接至封装基板110的表面118上的电连接。高功率芯片101和封装基板110之间的电连接可使用本领域已知的任意技术上可行的方法实现，包括焊接布置在高功率芯片101的表面115上的微焊点（microbump）105至形成在封装基板110的表面118上的键合点113。可替代地，通过将高功率芯片101上的PGA机械按压到形成在封装基板110中的通孔或插座中来实现这样的电连接。在图1中示意的实施例中，高功率芯片101配置为具有微焊点105，该微焊点105将高功率芯片101电和机械地耦合至封装基板110。底部填充106（垂直交叉线）、成型（overmold）、或任意技术上可行的封装技术均可用于保护高功率芯片101至封装基板110的电连接。
如所示，高功率芯片101的侧115安装为靠着封装基板110，以及高功率芯片101的相对侧116面朝远离封装基板110的方向并且可用于附着于此的散热件或其他冷却机制。在图1中示意的实施例中，高功率芯片101热耦合至冷却机制130，其包括散热器131来加强IC系统100的热传输。
低功率芯片102是在操作期间不会生成足以不利地影响邻近IC芯片或装置的性能的热量的低功率IC芯片。“低功率芯片”如本文所限定，是在正常操作期间生成大约1W量级的热量（即不超出大约5W）的任意IC芯片。低功率芯片102可以是位于IC系统100中的无源装置、诸如RAM、闪存等的存储器装置、I/O芯片或在正常操作中不生成超过5W的热量的任意其他芯片。低功率芯片102可以是未密封的或“裸硅（bare silicon）”存储器芯片；或在优选实施例中，可以是密封的且经测试的存储器芯片，该存储器芯片是完全封装。在后一种情况下，包含低功率芯片102的封装是足够薄以嵌入在封装基板110中的“低外形（low-profile）”封装。在堆叠配置中低功率芯片102安装为与高功率芯片101相对，并经由形成在封装基板110中的导电线路114电连接至PCB 190和高功率芯片101。低功率芯片102和封装基板110之间的电连接可使用本领域已知的任意技术上可行的方法实现。在图1中示意的实施例中，低功率芯片102和封装基板110中的导线迹线114之间的电连接可以使用铜系过孔123来实现，该铜系过孔123在从核119构建封装基板110的过程期间形成。
在一些实施例中，低功率芯片102包括硅通孔（through-silicon viaTSV）125来帮助低功率芯片102、高功率芯片101和PCB 190之间的电连接。具体地，TSV 125有效提供了低功率芯片102面对PCB 190的表面和低功率芯片102面对高功率芯片101的表面之间的非常短的电连接。这是因为，布置在低功率芯片102上的诸如键合点等的电连接典型地在低功率芯片102的单个侧面上制造，而对于低功率芯片102，期望电连接至在两个侧面上的组件，即至封装基板110以及至PCB 190。因此，如图1中所示，经由TSV 125，低功率芯片102能够嵌入IC系统100中，并且电连接能够直接实现至PCB 190和封装基板110上的导线迹线114两者，从而形成低功率芯片102和高功率芯片101之间的非常短路径长度的互连。TSV125是穿过低功率芯片102形成的并且用导电材料压得的“微过孔”，所述导电材料诸如用于经由导线迹线114实现直接至低功率芯片102的电连接的焊料。
封装基板110为IC系统100提供结构刚性以及电接口，该电接口用于在高功率芯片101、低功率芯片102和印刷电路板109之间路由输入和输出信号及功率。封装基板110是刚性且热绝缘的基板，高功率芯片101安装于其上，并且低功率芯片102嵌入其中。在一些实施例中，封装基板110是层压基板并且包括绝缘层117的堆叠或构建在核119的顶和底表面上的层压件。如所示，在绝缘层压层之间形成互连层111和过孔112，来产生低功率芯片102和PCB 110之间以及低功率芯片102和高功率芯片101之间的导线迹线114。在互连层111和过孔112形成之前，在核119中形成孔并且低功率芯片102定位于其中。然后在低功率芯片102的周围形成过孔123和封装基板110的外层，即互连层111和绝缘层117。
存在许多本领域众所周知的用于制造本发明的实施例中使用的层压基板的合适的材料，其拥有必备的机械强度、电性质和理想的低的导热率。这样的材料包括作为传统的环氧层压件的FR-2和FR-4和来自于三菱瓦斯化学公司的树脂基双马来酰亚胺三（Bismaleimide-Triazine BT）。
FR-2是具有在大约0.2W/（K-m）范围内的导热率的合成树脂粘合板。FR-4是具有在大约0.35W/（K-m）范围内的导热率的环氧树脂粘接剂的编织玻璃纤维布。BT/环氧层压基板还具有大约0.35W/（K-m）范围内的导热率。还可以使用导热率低于大约0.5W/（K-m）的其他合适刚性、电隔离、热绝缘的材料，并且仍然在本发明的范围内。
除了用作IC系统100的结构基础外，封装基板110还经由导线迹线114路由电源信号、地信号以及至和来自高功率芯片101、低功率芯片102和PCB 190的输入/输出（I/O）信号。因此，封装基板110配置为具有金属导体来执行该路由功能，即互连层111和过孔112。在一些实施例中，互连层111是从接合至封装基板110的一个或多个层压件的铜箔所蚀刻的迹线，通孔112是利用金和/或无电镀镍层电镀或完成。
因为封装基板110的部分布置在高功率芯片101和低功率芯片102之间，因此低功率芯片102能够定位为与高功率芯片101部分或完全地重叠而不会过热。由于电路之间互连的较短路由线路导致较快的信号传播和噪声、串扰（cross-talk）和其他寄生的减少，因此定位低功率芯片102为与高功率芯片101部分或完全地重叠导致高功率芯片101和低功率芯片102的较好的电性能。在电路设计中，寄生是无意的电效应，包括由电路的各种组件和布线结构的电交互造成的电阻、电容和电感。在IC封装领域，寄生由芯片至例如IC键合点、接合线、封装引线、导线迹线等的外部组件的互连所造成。如图1中所示意，通过在重叠配置中堆叠高功率芯片101和低功率芯片102，高功率芯片101和低功率芯片102之间互连的长度最小化，并且大大减少这样的寄生。另外，如所示通过堆叠高功率芯片101和低功率芯片102来最小化IC系统100的总的“覆盖区”，IC系统100有利小于将高功率芯片101和低功率芯片102在封装基板的相同侧并排式定位的IC封装。
在图1所示意的实施例中，高功率芯片101和低功率芯片102定位为高功率芯片101和低功率芯片102完全重叠，因此形成芯片的堆叠。在其他实施例中，当低功率芯片102与高功率芯片101仅部分重叠时，实现将低功率芯片102和高功率芯片101定位为紧密靠近的优点。图2是根据本发明的一个实施例的、具有与高功率芯片101部分重叠的多个低功率芯片102的IC系统200的示意横剖面视图。如所示，在IC系统200中，低功率芯片102的每一个均偏离高功率芯片101的中心并且与高功率芯片101的边缘211重叠。因为低功率芯片102的每一个布置为靠近高功率芯片101并且仅通过封装基板110与其分离，因此低功率芯片102和高功率芯片101之间的互连的路径长度非常短。具体地，能够直接通过低功率芯片102的TSV 125和封装基板110的导线迹线114来延伸互连。注意，在常规PoP芯片载体中，由于逻辑装置的高功率和大量热量生成不利地影响低功率芯片102的性能和可靠性，因此定位一个或多个低功率芯片102与高功率逻辑装置（诸如CPU或GPU）大致重叠通常从发热方面是不可行的。
在一个实施例中，低功率芯片102被间隙250分离或偏离高功率芯片101，从而电互连260能够从PCB 190直接延伸至高功率芯片101并且穿过封装基板110。电互连260可用于提供电源和/或地信号给高功率芯片101。在另一个实施例中，I/O信号线270布置在间隙250中并将低功率芯片102连接至高功率芯片101，代替低功率芯片102中TSV 125的使用或作为低功率芯片102中TSV 125的使用的附加使用。
根据一些实施例，IC系统包括两个或更多个高功率逻辑芯片。图3是根据本发明一个实施例的，具有多个高功率芯片301、302的IC系统300的示意横剖面视图。除了IC系统300包括两个高功率逻辑芯片301、302和插入件（interposer）350之外，IC系统300在组织和操作上与IC系统100大致类似。高功率芯片301、302的每一个可以是诸如CPU或GPU的逻辑装置，其在操作期间生成足以不利地影响IC系统300中附近的低功率芯片102A、102B和/或无源装置的热量。由于高功率逻辑芯片301、302的每一个的显著的热传输要求，不将高功率逻辑芯片301、302堆叠。相反，高功率逻辑芯片301、302定位在并排配置中，因此如所示有助于冷却机制130直接放置于其上。在一些实施例中，低功率芯片102A配置为与高功率逻辑芯片301一起使用，以及低功率芯片102B配置为与高功率逻辑芯片302一起使用。在一些实施例中，除高功率芯片301、302之外，IC系统300可以包括布置在插入件350上的一个或多个附加的IC芯片。例如，这种附加的IC芯片可以包括全球定位系统（GPS）芯片、射频（RF）收发器芯片、Wi-Fi芯片等等中的一个或多个。
高功率逻辑芯片301、302耦合至插入件350，该插入件350是提供高功率逻辑芯片301、302、低功率芯片102A、102B和PCB 190之间的电互连的中间层或结构。在一些实施例中，插入件350由硅或玻璃基板形成，并且配置为具有多个金属互连层和过孔来提供所述电连接。在一些实施例中，插入件350包括在结构上类似于图1中所描述的低功率存储器芯片102中的TSV 125的硅通孔351。硅通孔351提供高功率芯片101和封装基板110之间的非常短的电连接。插入件350可以利用C4焊料凸块352、所布置的微焊点或在封装基板110上焊接至键合点113的焊料球电和机械地耦合至封装基板110。
在图3中示意的实施例中，插入件350提供高功率逻辑芯片301、302和低功率芯片102A、102B之间的附加的热绝缘。因此，插入件350的使用有助于高功率逻辑芯片301和302之间的信号的高速传播，并且加强低功率芯片102A、102B与高功率逻辑芯片301、302的热隔离。
根据一些实施例，IC系统包括嵌入在封装基板中并且布置为与IC系统中的低功率芯片邻近的热分配层，来增加低功率芯片的热传输。图4是根据本发明实施例的、具有潜入在封装基板中的热分配层401的IC系统400的示意横剖面视图。如所示，热分配层401形成为封装基板410的层并且定位为与低功率芯片102接触。热分配层401也称之为“热管（heatpipe）”，包括诸如铜或铝的具有高热导率的材料。热分配层401配置为从低功率芯片102将由低功率芯片102所生成的热能导离，因此减少在IC系统400的操作期间低功率芯片102过热的风险。在一些实施例中，热分配层401由一个或多个金属箔层形成，考虑到IC系统400的覆盖区和低功率芯片102和高功率芯片101的热量生成，本技术领域的技术人员能够容易地确定该金属箔层的厚度。在一些实施例中，热分配层401包括通孔405来允许互连在低功率芯片102和高功率芯片101之间延伸而不接触热分配层401。在一些实施例中，一个或多个低功率芯片102可以布置在IC系统400的边缘附近，来增强热量从低功率芯片102散除。
在本发明另一个实施例中，IC系统包括多个存储器芯片的堆叠，其定位为大致重叠高功率逻辑芯片，因此当IC系统包括多个存储器芯片时，减小IC系统的覆盖区。图5是根据本发明实施例的、具有布置在封装基板110的一侧上的高功率芯片101和设置在堆叠配置中并且嵌入在封装基板110中的两个低功率芯片102的IC系统500的示意横剖面视图。如所示因为低功率芯片102是堆叠的，多个低功率芯片102可以包括在IC系统500中而不增大IC系统500的覆盖区。
在这样的实施例中，一个或多个热分配层401可以定位为与一个或多个低功率芯片102接触。在一些实施例中，热分配层401可以布置为邻近并且接触低功率芯片102的每一个和/或布置为在低功率芯片102之间。在一些实施例中，在构建封装基板110的过程期间，热分配层401形成为布置至核119或者以其他方式接附至核119的一层。热分配层401包括通孔405，其允许互连在低功率芯片102和封装基板110之间延伸。如结合图1的上述描述，TSV 125提供低功率芯片102和高功率芯片101之间具有非常短的路径长度的互连，因此最小化互连寄生并且最大化IC系统500中的信号传播。另外，低功率芯片102不经受IC系统500中的过热，首先因为封装基板110提供低功率芯片102与高功率芯片101的大量的热绝缘，以及第二，因为热分配层401增大从低功率芯片102的热传输来消除由低功率芯片102生成的热量。
总的来说，本发明的实施例阐述了一种IC系统，其中低功率芯片位于靠近相同IC系统中的一个或多个高功率芯片，而不经受过热结果。此外，这种紧密靠近有利地缩短了高功率和低功率装置之间的互连路径长度，这提高了装置性能并较小了IC系统中的互连寄生。
虽然上述内容针对本发明的实施例，可设计发明的其他的和进一步的实施例，而不超出本发明的基本范围以及由以下权利要求所确定的本发明的范围。

Claims (10)

1.一种系统，包括：
布置在芯片封装基板的第一侧上的第一高功率芯片；以及
嵌入在所述芯片封装基板中并且电连接至所述第一高功率芯片的第一低功率芯片，
其中所述高功率芯片在正常操作期间生成至少10W的热量，并且所述低功率芯片在正常操作期间生成少于5W的热量。
2.根据权利要求1所述的系统，其中所述第一低功率芯片由形成在所述第一低功率芯片中的硅通孔电连接至所述第一高功率芯片。
3.根据权利要求1所述的系统，进一步包括布置在所述芯片封装基板的所述第一侧上与所述第一高功率芯片邻近的第二高功率芯片。
4.根据权利要求1所述的系统，其中所述芯片封装基板包括具有低于大约0.5W/（°C-m）热导率的热绝缘材料。
5.根据权利要求1所述的系统，进一步包括嵌入在所述芯片封装基板中并且与所述第一低功率芯片邻近的热分配层。
6.一种系统，包括
具有第一侧的插入件，所述第一侧耦合至芯片封装基板的第一侧；
布置在所述插入件的第二侧上的多个芯片，其中所述插入件的所述第二侧不耦合至所述芯片封装基板；以及
嵌入在所述芯片封装基板中的第一低功率芯片。
7.根据权利要求6所述的系统，其中所述多个芯片包括全球定位系统（GPS）芯片、射频（RF）收发器芯片或Wi-Fi芯片。
8.根据权利要求6所述的系统，进一步包括布置在所述多个芯片的至少一个上的散热件，所述多个芯片布置在所述插入件上。
9.根据权利要求8所述的系统，其中所述多个芯片包括中央处理单元（CPU）和图形处理单元（GPU）。
10.根据权利要求9所述的系统，其中通道布置在所述第一低功率芯片和所述第二低功率芯片之间，并且所述通道中布置有以下至少一个：（a）从所述系统之外的源至所述多个芯片之一的电源连接和（b）在所述第一低功率芯片或者所述第二低功率芯片与所述多个芯片之一之间的电互连。
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