CN102956603A - 半导体设备、半导体设备的制造方法以及电子设备 - Google Patents

半导体设备、半导体设备的制造方法以及电子设备 Download PDF

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Publication number
CN102956603A
CN102956603A CN2012102857034A CN201210285703A CN102956603A CN 102956603 A CN102956603 A CN 102956603A CN 2012102857034 A CN2012102857034 A CN 2012102857034A CN 201210285703 A CN201210285703 A CN 201210285703A CN 102956603 A CN102956603 A CN 102956603A
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Prior art keywords
stud bumps
semiconductor
semiconductor device
flip
chip
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CN2012102857034A
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胁山悟
尾崎裕司
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Sony Corp
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Sony Corp
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Publication of CN102956603A publication Critical patent/CN102956603A/zh
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Abstract

本发明提供半导体设备、半导体设备的制造方法以及电子设备。该半导体设备包括：半导体部件；Cu柱形凸块，形成在半导体部件上；以及焊料凸块，构造为电连接到Cu柱形凸块。

Description

半导体设备、半导体设备的制造方法以及电子设备
技术领域
本公开涉及构造为利用柱形凸块而被连接的半导体设备，该半导体设备的制造方法以及电子设备。
背景技术
作为半导体设备的倒装芯片连接技术，存在将Au柱形凸块连接到SnAg焊料凸块的方法或者将Au柱形凸块连接到涂布有Pd的Sn焊料凸块的方法（日本专利特开第2009-218442号及2009-239278号公报）。
存在用于将Au柱形凸块连接到半导体芯片的Cu电极的倒装芯片连接技术（日本专利特开第2001-60602号公报）或者用于将Au柱形凸块连接到镀覆Sn的Cu电极的倒装芯片连接技术（日本专利特开第2005-179099号公报）。
而且，已经提出了用Cu柱形凸块代替Au柱形凸块（日本专利特开第2011-23568号公报）。
发明内容
在采用上述柱形凸块的倒装芯片连接技术中，需要改善半导体设备的连接可靠性。
本公开提供了具有高的连接可靠性的半导体设备和电子设备以及该半导体设备的制造方法。
本公开中的半导体设备包括：半导体部件；Cu柱形凸块，形成在半导体部件上；以及焊料凸块，电连接到Cu柱形凸块。
此外，本公开中的半导体设备的制造方法包括：在半导体部件上形成Cu柱形凸块；以及将Cu柱形凸块倒装芯片连接到焊料凸块。
此外，本公开中的电子设备包括半导体设备及构造为处理半导体设备的输出信号的信号处理电路。
根据半导体设备及半导体设备的制造方法，采用Cu柱形凸块进行倒装芯片连接，从而即使在低温连接过程中也不会在Cu和焊料之间的连接部分处产生低强度的合金。因此，可以避免Cu柱形凸块与焊料凸块之间的连接部分处的连接缺陷，并且可以改善连接可靠性。
根据本公开，可以提供具有高连接可靠性的半导体设备和电子设备。
通过下面对附图所示的本公开优选实施例的详细描述，本公开的上述及其他目标、特征和优点将更加清楚明了。
附图说明
图1A是示出倒装芯片连接之前的柱形凸块和焊料凸块的构造的示意图，图1B是示出倒装芯片连接之后的柱形凸块和焊料凸块的构造的示意图；
图2A是示出倒装芯片连接之前的柱形凸块和焊料凸块的构造的另一示意图，图2B是示出倒装芯片连接之后的柱形凸块和焊料凸块的构造的另一示意图；
图3是示出根据第一实施例的半导体设备的构造的截面图；
图4是示出倒装芯片连接之前Cu柱形凸块的构造的示意图；
图5是示出倒装芯片连接之后Cu柱形凸块和焊料凸块的构造的示意图；
图6是示出根据第一实施例的半导体设备的工艺流程的示意图；
图7A至7C是Cu柱形凸块的制造工艺示意图；
图8A至8D是焊料凸块的制造工艺示意图；
图9A至9C是采用Cu柱形凸块和焊料凸块的倒装芯片连接的工艺示意图；
图10是示出根据第一实施例的半导体设备的工艺流程的修改示例的示意图；
图11A至11C是采用Cu柱形凸块和焊料凸块的倒装芯片连接的工艺示意图；
图12是示出根据第一实施例的半导体设备的修改示例的构造的示意图；
图13是示出根据第二实施例的半导体设备的构造的截面图；
图14是示出根据第二实施例的半导体设备的工艺流程的示意图；
图15是示出根据第二实施例的半导体设备的工艺流程的修改示例的示意图；以及
图16是示出电子设备的构造的示意图。
具体实施方式
下面，将描述实施本公开的实施例的示例。然而，本公开并不局限于下面的示例。
应该注意的是，将按照下面的顺序给出描述。
1、半导体设备的概要
2、半导体设备的第一实施例
3、第一实施例的半导体设备的制造方法
4、半导体设备的第二实施例
5、第二实施例的半导体设备的制造方法
6、电子设备
1.半导体设备的概要
将描述半导体设备的倒装芯片连接的概要。
图1示出了采用现有技术的通用Au柱形凸块的倒转芯片连接的构造。图1A是示出连接之前的Au柱形凸块11和Sn凸块12的构造的示意图，而图1B是示出连接之后的Au柱形凸块11和Sn凸块12的构造的示意图。
图1A所示的Au柱形凸块11是Au配线形成的Au凸块。Au柱形凸块11形成在电极14上，电极14形成在半导体部件13上。除了在其上形成有Au柱形凸块11的电极14上之外，半导体部件13被保护层15涂覆。
此外，图1A所示的Sn凸块12包括Sn族焊料，诸如SnAg焊料凸块。Sn凸块12包括形成在配线基板16上的电极17以及形成在电极17上的凸块下金属（UBM，under bump metal）18。除了在其上形成有UBM 18的电极上之外，配线基板16被保护层19涂覆。
如图1B所示，半导体部件13通过Au柱形凸块11和Sn凸块12被倒装芯片连接到配线基板16上。
此时，需要在300°C以上的温度下连接Au柱形凸块11和Sn凸块12，以改善连接可靠性。
如图1B所示，在300°C以下的连接中，强度低的金属间化合物（IMC，intermetallic compound），诸如SnAu4合金，由于Au到Sn的扩散而在连接部分处产生。因此，裂缝24等的产生将降低连接性和可靠性。此外，由于Au柱形凸块11被插入到Sn凸块12中，所以难以防止Au到Sn的扩散。因此，难以防止在连接部分处产生IMC 20。
如上所述，在通过Au柱形凸块11和Sn凸块12进行的倒装芯片连接中，需要在300°C以上的温度下进行高温连接，因此从连接可靠性的角度来看难以进行低温连接。
而且，代替采用Sn凸块，如图2所示，考虑了用低熔点的In族焊料凸块来倒装芯片连接Au柱形凸块11。图2A是示出连接之前的Au柱形凸块21和In凸块22的构造的示意图，而图2B是示出连接之后的Au柱形凸块21和In凸块22的构造的示意图。
图2A所示的Au柱形凸块21具有与上述图1A相同的构造。此外，In凸块由In族焊料构成。在该方法中，不产生低强度的合金，诸如，SnAu4合金，从而可以在200°C以下进行低温倒装芯片连接。
然而，在通过采用Au柱形凸块21和In凸块22进行的连接中，Au与In之间的扩散系数大，从而难以控制AuIn合金的生长。结果，如图2B所示，In凸块由于AuIn合金23的生长而被吸取（suck）。因此，在通过Au柱形凸块21和In凸块22进行的倒装芯片连接中，难以保证连接性。
如上所述，在采用柱形凸块的倒装芯片连接中，从连接可靠性的角度来看难以进行低温加工。因此，在耐热性低的材料安装到半导体部件等的情况下，难以实施具有高的连接可靠性的倒装芯片连接。因此，需要一种倒装芯片连接方法，其在低温下能够稳定地连接采用耐热性低的材料形成的半导体设备等并且具有高的连接可靠性。
2.半导体设备的第一实施例
[图像传感器：构造]
下文，将描述半导体设备的第一实施例。图3是示出根据第一实施例的半导体设备的构造的截面图。在第一实施例中，将以图像传感器作为半导体设备的示例来进行描述。图3是由安装在玻璃基板上的图像传感器形成的半导体设备30的截面图。
半导体设备30包括含图像传感器的半导体部件31和玻璃基板32。半导体部件31包括形成在半导体部件31上的电极45和形成在电极45上的Cu柱形凸块41。
此外，玻璃基板32包括形成在玻璃基板32上的用于倒装芯片连接的电极47、形成在电极47上的凸块下金属（UBM）48以及形成在UBM 48上的低熔点焊料凸块44。此外，制备：形成在玻璃基板32上的配线层34、涂覆配线层34的保护层49、连接到配线层34的用于外部连接的电极35以及形成在用于外部连接的电极35上的焊料球36。
此外，密封Cu柱形凸块41和焊料凸块44之间的连接部分的下填充树脂（under-fill resin）33设置在半导体部件31和玻璃基板32之间。
半导体部件31是通常用作图像传感器的元件，并且是诸如CCD（电荷耦合器件）图像传感器和CMOS（互补金属氧化物半导体）图像传感器的半导体元件。半导体部件31设置为使得光接收面面对玻璃基板32侧。
此外，在与光接收面相同的表面上且连接到玻璃基板32的电极45形成在半导体部件31上。然后，用于倒装芯片连接的Cu柱形凸块41形成在电极45上。合金层43形成在Cu柱形凸块41与焊料凸块44之间的接触表面上。此外，Cu柱形凸块41在不与焊料凸块44接触的表面上包括镀覆层42。
玻璃基板32例如由用于图像传感器的盖板玻璃（cover glass）构成。然后，用于倒装芯片连接的电极47和用于外部连接的电极35通过配线层34而在玻璃基板32上连接。用于连接到外部器件的焊料球36形成在电极35上。焊料球36采用Sn族的二元或三元焊料等。例如，采用SnBi、SnIn、SnAgCu、SnZn以及SnAg等。应该注意的是，玻璃基板32可以通过采用Au配线的配线接合代替焊料球36而被连接。
[Cu柱形凸块：构造]
接下来，在上述的半导体设备30中，图4示出了形成在半导体部件31上的Cu柱形凸块41的构造。图4所示的Cu柱形凸块41处在连接前的状态。此外，图5示出了连接半导体部件31和玻璃基板32之后的Cu柱形凸块41和焊料凸块44的构造。
如图4所示，Cu柱形凸块41形成在半导体部件31上的电极45上。除了在其上形成有Cu柱形凸块41的电极45上之外，半导体部件31被保护层46涂覆。
此外，Cu柱形凸块41的表面被镀覆层42涂覆。
镀覆层42是用于防止Cu柱形凸块41氧化的保护层。此外，当Cu柱形凸块41被倒装芯片连接时，镀覆层42由使表面的镀覆层在焊料凸块44中快速扩散的材料形成。
作为镀覆层42，采用例如通过无电镀方法由闪镀的Ni镀覆层和闪镀的Au镀覆层构成的镀覆层，或者采用无电镀的Co镀覆层。
例如，镀覆层42的厚度形成为从0.01μm到0.1μm。
此外，设置在玻璃基板32上的焊料凸块44由低熔点焊料形成。作为低熔点焊料，例如采用In的一元焊料材料，诸如Sn-Bi、Sn-In、Bi-In的低熔点二元焊料材料以及通过将其他金属添加到二元焊料材料行形成的焊料材料。作为低熔点焊料，例如采用熔点为200°C或更低的焊料材料。
然后，形成在半导体部件31上的Cu柱形凸块41压接玻璃基板32的焊料凸块44，由此使Cu柱形凸块41的顶端进入焊料凸块44。随后，在Cu柱形凸块插入焊料凸块44的状态下进行加热，从而形成图5所示的倒装芯片连接。
如图5所示，当进行倒装芯片连接时，Cu柱形凸块41和焊料凸块44之间的接触表面处的镀覆层42扩散到焊料凸块44中。此外，Cu和焊料的合金层43形成在Cu柱形凸块41和焊料凸块44之间的接触表面上。此时，合适的是：焊料凸块44未完全合金化，且未合金化的焊料凸块44留在UBM 48上。
在上述构造中，通过采用Cu作为倒装芯片连接的柱形凸块材料，可以防止在低熔点焊料凸块44的界面上产生机械强度低的合金。此外，通过采用低熔点焊料作为焊料凸块44，可以在低温下进行倒装芯片连接。
例如，在焊料凸块44由In制成的情况下，In3Cu7等的金属间化合物形成在Cu柱形凸块41和焊料凸块44之间的界面上。In3Cu7的金属间化合物具有足够的机械强度。因此，即使在低温倒装芯片连接中，也不产生强度低且导致连接可靠性降低的合金。此外，即使在Cu柱形凸块与低熔点二元焊料材料等的组合中，也不会在界面上产生机械强度低的合金层。因此，即使在具有热敏感构造的半导体部件31中，也可以进行倒装芯片连接。
因此，在倒装芯片连接中，可以进行低温连接并且进一步地可以改善半导体设备的连接可靠性。
3.第一实施例的半导体设备的制造方法
将描述第一实施例的半导体设备的制造方法。应该注意的是，在下面的描述中，将仅仅描述在柱形凸块附近形成到半导体设备的构造。其他构造可以通过现有技术的已知方法来制造。
[制造方法：后UF树脂工艺流程]
图6示出了图3所示的半导体设备30的工艺流程。
如图6所示，构成半导体部件31的诸如光电二极管及各种晶体管的元件及配线等通过已知的方法形成在半导体基底上。此时，用于外部连接的电极45被形成，用于进行倒装芯片连接。
Cu柱形凸块41形成在用于连接到半导体部件31的外部装置的电极45上。
镀覆层42通过无电镀覆方法形成在所形成的Cu柱形凸块41上。
半导体基底的用于形成各种元件的表面的相反面（背面）被切削（背研磨：BG），且形成构成背面照射型的固态成像装置的半导体部件31。
半导体基底被切割（DC），且半导体部件31被分成单独的芯片。
此外，配线层34及电极47等通过已知的方法形成在玻璃基板32上。然后，UBM 48形成在电极47上。
焊料凸块44采用低熔点焊料形成在UBM 48上。
接下来，Cu柱形凸块41压接（接合）至焊料凸块44，由此将分成单独芯片的半导体部件31倒装芯片连接到玻璃基板32。连接之后，下填充（UF）树脂33注入到Cu柱形凸块41和焊料凸块44之间的连接部分周围。然后，注入的UF树脂33被加热，UF树脂硬化（固化）。
通过上述工艺，可以制造半导体设备30。
[制造方法：Cu柱形凸块]
将参考图7所示的制造工艺示意图描述上述半导体设备30的工艺流程中的Cu柱形凸块形成工艺。
如图7A所示，Cu配线51采用毛细管（capillary）52接合在半导体部件31的电极45上。然后，如图7B所示，Cu柱形凸块41通过切断Cu配线51而形成。在Cu柱形凸块41的形成工艺中，例如，采用直径为15到35μm的Cu配线51来形成直径为30到70μm的Cu柱形凸块41。
接着，如图7C所示，镀覆层42形成在所形成的Cu柱形凸块41的表面上。镀覆层42通过无电镀覆方法形成。例如，通过无电镀覆方法在Cu柱形凸块41的表面上进行Ni的闪镀。然后，在闪镀的Ni镀覆层上进行Au的闪镀。由此，形成由Ni镀覆层和Au镀覆层形成的镀覆层42。
例如，在镀覆层42中，Ni镀覆层和Au镀覆层形成为分别具有0.01到0.1μm的厚度。
此外，例如，通过无电镀覆方法在Cu柱形凸块41的表面上进行Co镀覆以作为镀覆层42。在此情况下，包括Co镀覆层的镀覆层42形成为具有0.01到0.1μm的厚度。
通过上述工艺，Cu柱形凸块41形成在半导体部件31上。
[制造方法：焊料凸块]
接着，将参考图8所示的制造工艺示意图描述半导体设备30的工艺流程中的焊料凸块形成工艺。
如图8A所示，阻挡金属层53形成在电极47和保护层49的表面上。
在形成阻挡金属层53之前，电极47的表面上的氧化物膜通过反溅射（reverse-sputtering）被去除。随后，Ti层通过溅射方法形成在电极47上。然后，Cu层通过溅射方法形成为涂覆Ti层。由此，由Ti层和Cu层构成的阻挡金属层53被形成。
接着，如图8B所示，抗蚀剂层54形成在阻挡金属层53上。然后，抗蚀剂层54通过光掩模55而经受曝光处理。在光掩模55中，采用用于将曝光光照射到用于形成电极47的部分上的图案。
接着，如图8C所示，凸块下金属（UBM）48和焊料凸块44通过电镀覆方法形成在通过去除抗蚀剂层54的曝光部分而形成的开口中。UBM 48采用Ni、Ti、TiW、W及Cu等通过电镀覆方法形成。此外，通过采用In的一元焊料材料、诸如Sn-Bi，Sn-In及Bi-In的低熔点二元焊料材料等，通过电镀覆方法形成焊料凸块44。
接下来，如图8D所示，在去除抗蚀剂层54之后，暴露到表面的阻挡金属层53被去除。此外，焊料凸块44通过回流熔融成球形。
通过上述工艺，在玻璃基板32上形成焊料凸块44。
[制造方法：倒装芯片连接]
接着，将参考图9所示的制造工艺示意图描述上述半导体设备30的工艺流程中的倒装芯片连接工艺和UF树脂密封工艺。
首先，如图9A所示，通过使形成Cu柱形凸块41的表面面向形成焊料凸块44的表面，半导体部件31和玻璃基板32被对齐。
接着，如图9B所示，在Cu柱形凸块41与焊料凸块44对齐的同时，半导体部件31和玻璃基板32被压接并被倒装芯片连接。此时，根据倒装芯片连接，压接和加热同时进行。Cu柱形凸块41的表面上的镀覆层42通过热处理扩散到焊料凸块44中。此外，合金层43通过热处理而在Cu柱形凸块41和焊料凸块44之间的连接表面上产生并生长。
在上述倒装芯片连接时，在压接期间施加到每单位凸块的压力（接合力）例如为0.01gf/凸块到10gf/凸块。此外，在倒装芯片连接期间加热温度设定到200°C或更低。此外，加热温度设定到等于或大于所采用的焊料凸块44的熔点的温度。例如，在固态In焊料用于焊料凸块44的情况下，焊料被加热到156°C或更高，156°C是In的熔点。
接着，如图9C所示，下填充（UF）树脂33施加到Cu柱形凸块44与焊料凸块44之间的连接部分。然后，UF树脂33被加热并硬化。在UF树脂33中，半导体部件33与玻璃基板32接合，由此改善了半导体设备的粘合表面的机械连接可靠性。
通过上述工艺，半导体部件31可倒装芯片连接到玻璃基板32。
在上述倒装芯片连接中，通过采用低熔点焊料用于焊料凸块44，可以在200°C或更低的温度下进行连接。此外，通过采用Cu柱形凸块41，即使在低温倒装芯片连接中也不会产生强度低的合金。
应该注意，在上述制造工艺中，在倒装芯片连接的同时不需要进行使合金层生长的热处理。例如，在压接并倒装芯片连接半导体部件31和玻璃基板32的工艺之后，可在不同的工艺中进行退火。此时，退火在200°C或更低的温度下进行。
[修改示例：先UF树脂工艺流程]
接着，将描述上述半导体设备30的制造方法的修改示例。在该修改示例中，通过UF树脂密封倒装芯片连接部分与上述制造方法不同。
图10示出了UF树脂密封工艺改变的工艺流程。
如图10所示，构成半导体部件31的诸如光电二极管及各种晶体管的元件及配线等通过已知的方法形成在半导体基底上。此时，用于外部连接的电极45形成为用于进行倒装芯片连接。
Cu柱形凸块41形成在用于连接到半导体部件31的外部装置的电极45上。
镀覆层42通过无电镀覆方法形成在所形成的Cu柱形凸块41上。
下填充（UF）树脂33层叠在所形成的Cu柱形凸块41上。
半导体基底的用于形成各种元件的表面的相反面（背面）被切削（背研磨：BG），且形成构成背面照射型的固态成像装置的半导体部件31。
半导体基底被切割（DC），且半导体部件31被分成单独的芯片。
此外，配线层34及电极47等通过已知的方法形成在玻璃基板32上。然后，UBM 48形成在电极47上。
焊料凸块44采用低熔点焊料形成在UBM 48上。
接下来，Cu柱形凸块41压接（接合）至焊料凸块44，由此将分成单独芯片的半导体部件31倒装芯片倒装连接到玻璃基板32。连接之后，UF树脂33被加热并硬化（固化）。
通过上述工艺，可以制造半导体设备30。
接着，将参考图11所示的制造工艺示意图描述上述半导体设备30的工艺流程中的UF树脂形成工艺和UF树脂密封工艺。应该注意，在下面的描述中，将仅仅描述与上述半导体设备制造方法不同的工艺。
首先，镀覆层42通过上述工艺（图7C）形成在Cu柱形凸块41上，然后覆盖Cu柱形凸块41的下填充（UF）树脂33形成为如图11A所示。例如，通过采用包括下填充树脂的涂覆液的旋涂法或通过下填充树脂的干膜层叠，形成下填充（UF）树脂33。
接着，如图11B所示，通过使形成Cu柱形凸块41的表面面向形成焊料凸块44的表面，半导体部件31和玻璃基板32被对齐。然后，如图11C所示，半导体部件31和玻璃基板32被压接并被倒装芯片连接。此外，合金层43生长在Cu柱形凸块41和焊料凸块44之间的连接表面上，且UF树脂33通过热处理被硬化。
通过上述工艺，在倒装芯片连接之前形成覆盖Cu柱形凸块41的UF树脂33，且半导体设备30可以通过在倒装芯片连接之后硬化UF树脂33的方法而制造。
[半导体设备的修改示例]
在第一实施例的半导体设备中，可以采用配线基板代替玻璃基板。图12示出了采用配线基板的半导体设备的构造。
图12所示的半导体设备包括构成图像传感器的半导体部件31和配线基板37。半导体部件31包括形成在半导体部件31上的电极45和形成在电极45上的Cu柱形凸块41。
此外，配线基板37包括形成在配线基板37上的用于倒装芯片连接的电极47、形成在电极47上的凸块下金属（UBM）48以及形成在UBM 48上的低熔点焊料凸块44。此外，配线基板37还包括：形成在配线基板37上的配线层34、涂覆配线层34的保护层49、连接到配线层34的用于外部连接的电极35以及形成在用于外部连接的电极35上的焊料球36。
例如，配线基板37包括在半导体部件31的光接收表面上的透光的光学部件38，诸如玻璃。然后，电极47、UBM 48及焊料凸块44沿着光学部件38的周围形成在配线基板37上。
应该注意，图12所示的半导体部件31及半导体部件31的Cu柱形凸块41等的构造与第一实施例相同。此外，形成在配线基板37上的焊料凸块44、电极47及配线层34等的构造与第一实施例相同。
作为上述修改示例，与包括Cu柱形凸块41的半导体部件31倒装芯片连接的部件不作具体限制，只要采用包括与倒装芯片连接对应的电极和形成在电极上的焊料凸块的电子部件。与半导体部件倒装芯片连接的电子部件例如可以是除上述玻璃基板和配线基板之外的半导体元件等。
4.半导体设备的第二实施例
接着，将描述半导体设备的第二实施例。图13示出了第二实施例的半导体设备。
图13所示的半导体设备60包括第一半导体部件61和第二半导体部件62。第一半导体部件61通过倒装芯片连接安装在第二半导体部件62上。
第一半导体部件61包括形成在第一半导体部件61上的电极45和形成在电极45上的Cu柱形凸块41。应该注意，第一半导体部件61的构造与上述图3所示的第一实施例的第一半导体部件31相同，从而其详细描述被省略。
第二半导体部件62包括用于倒装芯片连接的电极47、形成在电极47上的凸块下金属（UBM）48以及形成在UBM 48上的低熔点焊料凸块44。此外，第二半导体部件62的端部包括用于配线接合的焊垫电极63以用于外部连接。采用第二半导体部件62的用于配线接合的焊垫电极63，半导体设备60通过配线接合电连接到外部电子设备。此外，除了在用于倒装芯片连接的电极47上及用于配线接合的焊垫电极63上之外，保护层49设置在第二半导体部件62的表面上。
Cu柱形凸块41的表面被镀覆层42涂覆。作为镀覆层42，采用例如通过无电镀方法由闪镀（flash）的Ni镀覆层和闪镀的Au镀覆层构成的镀覆层，或者采用无电镀的Co镀覆层。
焊料凸块44由低熔点焊料形成。作为低熔点焊料，采用In的一元焊料材料、诸如Sn-Bi、Sn-In、Bi-In的低熔点二元焊料材料以及通过将其他金属添加到二元焊料材料形成的焊料材料。
Cu和焊料的合金层43形成在Cu柱形凸块41与焊料凸块44之间的接触表面上。
此外，在图13所示的半导体设备60中，密封半导体部件间的整个连接表面的下填充（UF）树脂33设置在第一半导体部件61和第二半导体部件62之间。第一半导体部件61和第二半导体部件62通过下填充（UF）树脂33而机械连接。然后，Cu柱形凸块41和焊料凸块44之间的连接部分形成到下填充（UF）树脂33中。由此，在半导体设备60中，填充在第一半导体部件61和第二半导体部件62之间的下填充树脂33形成了嵌条（fillet）。
5.第二实施例的半导体设备的制造方法
[第一制造方法：后UF树脂工艺流程]
图14示出了图13所示的半导体设备60的工艺流程。
如图14所示，构成第一半导体部件61的诸如各种晶体管的元件及配线等通过已知的方法形成在半导体基底上。此时，用于外部连接的电极45形成为用于进行倒装芯片连接。
Cu柱形凸块41形成在用于连接到第一半导体部件61的外部器件的电极上。
镀覆层42通过无电镀覆方法形成在所形成的Cu柱形凸块41上。
半导体基底的用于形成各种元件的表面的相反面（背面）被切削（背研磨：BG）。然后，半导体基底被切割（DC），第一半导体部件61被分成单独的芯片。
此外，构成第二半导体部件62的诸如各种晶体管的元件及配线等通过已知的方法形成在半导体基底上。此时，形成用于安装第一半导体部件61的电极47，UBM 48形成在电极47上。
焊料凸块44采用低熔点焊料形成在UBM 48上。
然后，半导体基底的用于形成各种元件的表面的相反面（背面）被切削（背研磨：BG）。然后，半导体基底被切割（DC），第二半导体部件62被分成单独的芯片。
接着，Cu柱形凸块41压接（接合）至焊料凸块44，由此倒装芯片连接第一半导体部件61和第二半导体部件62。
在倒装芯片连接之后，Cu柱形凸块41和焊料凸块44之间的连接部分被覆盖，下填充（UF）树脂33注入到第一半导体部件61和第二半导体部件62之间。然后，注入的UF树脂33被加热并硬化（固化）。
通过上述工艺，可以制造第二实施例的半导体设备60。
应该注意，Cu柱形凸块41的形成、焊料凸块44的形成及倒装芯片连接可以通过与上述图7至图9所示的第一实施例相同的方法来进行。
[第二制造方法：先UF树脂工艺流程]
接着，将描述第二实施例的半导体设备60的制造方法的修改示例。在修改示例中，通过UF树脂密封两个半导体部件与上述制造方法有所不同。
图15示出了UF树脂密封工艺被改变的工艺流程。
如图15所示，构成第一半导体部件61的诸如各种晶体管的元件及配线等通过已知的方法形成在半导体基底上。此时，用于外部连接的电极45形成为用于进行倒装芯片连接。
Cu柱形凸块41形成在用于连接到第一半导体部件61的外部器件的电极上。
镀覆层42通过无电镀覆方法形成在所形成的Cu柱形凸块41上。
所形成的Cu柱形凸块41被覆盖，下填充（UF）树脂33层叠在第一半导体部件61的整个表面上。
半导体基底的用于形成各种元件的表面的相反面（背面）被切削（背研磨：BG）。然后，半导体基底被切割（DC），且第一半导体部件61被分成单独的芯片。
此外，构成第二半导体部件62的诸如各种晶体管的元件及配线等通过已知的方法形成在半导体基底上。此时，形成用于安装第一半导体部件61的电极47，UBM 48形成在电极47上。
焊料凸块44采用低熔点焊料形成在UBM 48上。
然后，半导体基底的用于形成各种元件的表面的相反面（背面）被切削（背研磨：BG）。然后，半导体基底被切割（DC），第二半导体部件62被分成单独的芯片。
接着，Cu柱形凸块41压接（接合）至焊料凸块44，由此倒装芯片连接第一半导体部件61和第二半导体部件62。连接之后，注入的UF树脂被加热并硬化。
通过上述工艺，可以制造第二实施例的半导体设备60。
6.电子设备
[照相机]
上述实施例的半导体设备可以应用到包括半导体存储器、诸如数码照相机和视频照相机的照相机系统、具有摄像功能的移动电话或者其他具有图像功能的装置等的电子设备。下面，将以照相机作为电子设备的构造示例来进行描述。
图16示出了能拍摄静止图像或运动图像的视频照相机的构造示例。
该示例的照相机70包括固态成像装置71、将入射光引导到固态成像装置71的光接收传感器单元的光学系统72、提供在固态成像装置71和光学系统72之间的快门装置73以及驱动固态成像装置71的驱动电路74。此外，照相机70包括处理固态成像装置71的输出信号的信号处理电路75。
采用被倒装连接包括上述Cu柱形凸块的固态成像装置的半导体设备来制造固态成像装置71。
光学系统（光学透镜）72将来自目标的图像光（入射光）聚焦在固态成像装置71的成像面（未示出）上。结果，信号电荷在固态成像装置71中累计预定的时间段。应该注意，光学系统72可以由包括多个光学透镜的光学透镜组形成。此外，快门装置73控制入射光到固态成像装置71的光照射时间和光遮挡时间。
驱动电路74将驱动信号供应至固态成像装置71和快门装置73。然后，驱动电路74通过供应的驱动信号控制固态成像装置71到信号处理电路75的信号输出操作及快门装置73的快门操作。也就是，在该示例中，基于驱动电路74供应的驱动信号（时序信号），进行从固态成像装置71到信号处理电路75的信号传输操作。
信号处理电路75对从固态成像装置71传输的信号进行各种信号处理。然后，经受了各种信号处理的信号（图像信号）存储在诸如存储器的存储介质（未示出）或者输出到监视器（未示出）。
应该注意，本公开可以采用下面的构造。
（1）半导体设备，包括：半导体部件；Cu柱形凸块，形成在半导体部件上；以及焊料凸块，构造为电连接到Cu柱形凸块。
（2）根据（1）的半导体设备，还包括：镀覆层，形成在Cu柱形凸块的表面上。
（3）根据（1）或（2）的半导体设备，其中焊料凸块包括选择In、SnBi、SnIn及BiIn的至少一种。
（4）根据（2）或（3）的半导体设备，其中镀覆层包括Ni和Au的镀覆层及Co镀覆层中的一种。
（5）半导体设备的制造方法，包括：在半导体部件上形成Cu柱形凸块；以及将Cu柱形凸块倒装芯片连接到焊料凸块。
（6）根据（5）的半导体设备的制造方法，还包括：通过无电镀覆方法在Cu柱形凸块的表面上形成镀覆层。
（7）根据（5）或（6）的半导体设备的制造方法，其中在倒装芯片连接期间或在倒装芯片连接之后在200°C或更低的温度下进行加热。
（8）电子设备，包括：
上述（1）至（4）中任一个所描述的半导体设备；以及
信号处理电路，构造为处理半导体设备的输出信号。
本申请包含2011年8月17日提交至日本专利局的日本优先权专利申请JP2011-178390中公开的相关主题事项，其全部内容通过引用结合于此。
本领域的技术人员应当理解的是，在所附权利要求或其等同方案的范围内，根据设计需要和其他因素，可以进行各种修改、结合、部分结合和替换。

Claims (8)

1.一种半导体设备，包括：
半导体部件；
Cu柱形凸块，形成在所述半导体部件上；以及
焊料凸块，构造为电连接到所述Cu柱形凸块。
2.根据权利要求1所述的半导体设备，还包括：
镀覆层，形成在所述Cu柱形凸块的表面上。
3.根据权利要求1所述的半导体设备，其中
所述焊料凸块包括选自In、SnBi、SnIn及BiIn中的至少一种。
4.根据权利要求2所述的半导体设备，其中
所述镀覆层包括Ni和Au的镀覆层及Co镀覆层中的一种。
5.一种半导体设备的制造方法，包括：
在半导体部件上形成Cu柱形凸块；以及
将所述Cu柱形凸块倒装芯片连接到焊料凸块。
6.根据权利要求5所述的半导体设备的制造方法，还包括：
通过无电镀覆方法在所述Cu柱形凸块的表面上形成镀覆层。
7.根据权利要求5所述的半导体设备的制造方法，其中
在所述倒装芯片连接期间或在所述倒装芯片连接之后在200°C或更低的温度下进行加热。
8.一种电子设备，包括：
半导体设备，包括半导体部件、形成在所述半导体部件上的Cu柱形凸块及构造为电连接到所述Cu柱形凸块的焊料凸块；以及
信号处理电路，构造为处理所述半导体设备的输出信号。
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