JP5511156B2 - 半導体デバイスの実装方法、半導体素子モジュールおよび電子情報機器 - Google Patents
半導体デバイスの実装方法、半導体素子モジュールおよび電子情報機器 Download PDFInfo
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- JP5511156B2 JP5511156B2 JP2008171815A JP2008171815A JP5511156B2 JP 5511156 B2 JP5511156 B2 JP 5511156B2 JP 2008171815 A JP2008171815 A JP 2008171815A JP 2008171815 A JP2008171815 A JP 2008171815A JP 5511156 B2 JP5511156 B2 JP 5511156B2
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- 238000002844 melting Methods 0.000 claims description 3
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- 239000007924 injection Substances 0.000 claims description 2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
Landscapes
- Wire Bonding (AREA)
- Die Bonding (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
図1は、本発明の実施形態1に係る撮像素子モジュールの構成例を模式的に示す斜視図である。図2は、図1の撮像素子モジュールの要部縦断面図である。図3は、図1の撮像素子モジュールの要部の拡大縦断面図である。
(実施形態2)
上記実施形態1では、マウント基板2の各配線パターン2a上にペイスト状半田材料6aを載置し、そのペイスト状半田材料6a上にパールボール5を載置し、マウント基板2の各配線パターン2aとセンサデバイス4の各金属接合端子4aとを半田により接合すると同時に、パールボール5によりマウント基板2とセンサデバイス4との距離を一定の目標距離に高さ制御したが、本実施形態2では、マウント基板2の各配線パターン2aとは別に、マウント基板2上の左右の各配線パターン2a間の中央部分に、後述する熱硬化型ペイスト状樹脂材料としての熱硬化型ペイスト状接着剤7を4箇所配置して、その上にパールボール5を載置し、更にその上にセンサデバイス4を置き、マウント基板2の各配線パターン2aとセンサデバイス4の各金属接合端子4aとの電気的な接続を、別途、ハンダ付けにより行う場合について説明する。
(実施形態3)
図9は、本発明の実施形態3に係る撮像素子モジュールの要部構成例を模式的に示す縦断面図である。図1と同様の作用効果を奏する部材には同一の部材番号を付して説明することにする。
(実施形態4)
図10は、本発明の実施形態4として、本発明の実施形態1〜3の固体撮像モジュール1または1Aまたは10を含む固体撮像装置を撮像部に用いた電子情報機器の概略構成例を示すブロック図である。
2 マウント基板(基板)
2a 配線パターン
3 固体撮像素子
4 センサデバイス
4a 接続端子(端子)
5 パールボール(ボール)
6 半田接合部
6a ペイスト状半田材料
7 熱硬化型ペイスト状接着剤(熱硬化型ペイスト状樹脂材料)
11 集光レンズ
12 ホルダー部材
13 ガラス基板
90、90A 電子情報機器
91 固体撮像装置
91A ピックアップ装置
20 電子素子モジュール(半導体素子モジュール)
92 メモリ部
93 表示手段
94 通信手段
95 画像出力手段
Claims (6)
- 基板上に半導体素子を有する半導体デバイスを実装する半導体デバイスの実装方法において、
該基板と該半導体デバイスとの間に、目標間隔保持用のボールを介在させた状態で、該基板の配線パターンのランド部と該半導体デバイスの各端子とを接合部により接合する半導体デバイス実装工程を有し、
該半導体デバイス実装工程は、
該配線パターンの各ランド部上にそれぞれ、各ペイスト状半田材料をそれぞれ配置する半田材料配置工程と、
該各ペイスト状半田材料上の全部にそれぞれ、該ボールを載置するボール載置工程と、
該半導体デバイスを、該半導体デバイスの各端子と該配線パターンの各ランド部とをそれぞれ位置合せして、該ボール上に載置する半導体デバイス載置工程と、
該各ペイスト状半田材料を溶融させて、該半導体デバイスの各端子と該配線パターンの各ランド部とをそれぞれ接合する半導体デバイス接合工程とを有し、
該ボールが樹脂製球体の表面に金属めっきが施された球体であって、該金属めっきの金属材料が該半田材料と同じ材料である半導体デバイスの実装方法。 - 前記半田材料はペイスト状半田材料である請求項1に記載の半導体デバイスの実装方法。
- 前記半導体デバイス実装工程の後に、前記基板と前記半導体デバイスとの間の隙間内に充填樹脂を注入する充填樹脂注入工程をさらに有する請求項1に記載の半導体デバイスの実装方法。
- 前記ボールの直径は、前記半田材料の厚さよりも大きく設定されている請求項1に記載の半導体デバイスの実装方法。
- 前記ボールの直径は0.2〜0.8mmである請求項1に記載の半導体デバイスの実装方法。
- 前記目標間隔は、前記基板の配線パターンのランド部と前記半導体デバイスの各端子とを接合する接合部が所定の集中熱応力条件により接合不良にならない程度の間隔である請求項1に記載の半導体デバイスの実装方法。
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JP2010016013A JP2010016013A (ja) | 2010-01-21 |
JP5511156B2 true JP5511156B2 (ja) | 2014-06-04 |
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JP2012028433A (ja) * | 2010-07-21 | 2012-02-09 | Nec Network Products Ltd | 電子部品の実装方法 |
JP6756357B2 (ja) * | 2018-11-29 | 2020-09-16 | 株式会社ニコン | 撮像装置 |
WO2021038631A1 (ja) * | 2019-08-23 | 2021-03-04 | 株式会社Fuji | 電子回路装置及びその製造方法 |
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JPH08139097A (ja) * | 1994-11-10 | 1996-05-31 | World Metal:Kk | フリップチップ用接続ボール及び半導体チップの接合方法 |
JP3425903B2 (ja) * | 1999-09-21 | 2003-07-14 | Necエレクトロニクス株式会社 | Bga実装方法およびその実装構造 |
JP3334693B2 (ja) * | 1999-10-08 | 2002-10-15 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2009283628A (ja) * | 2008-05-21 | 2009-12-03 | Tamura Seisakusho Co Ltd | 半導体素子実装方法 |
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