CN102931174B - 一种微型表面贴装单相全波桥式整流器及其制造方法 - Google Patents

一种微型表面贴装单相全波桥式整流器及其制造方法 Download PDF

Info

Publication number
CN102931174B
CN102931174B CN201210423400.4A CN201210423400A CN102931174B CN 102931174 B CN102931174 B CN 102931174B CN 201210423400 A CN201210423400 A CN 201210423400A CN 102931174 B CN102931174 B CN 102931174B
Authority
CN
China
Prior art keywords
pad
bridge rectifier
phase full
rectifier
wave bridge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210423400.4A
Other languages
English (en)
Other versions
CN102931174A (zh
Inventor
曹孙根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nantong Hornby Electronic Co ltd
Original Assignee
Nantong Hornby Electronic Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantong Hornby Electronic Co ltd filed Critical Nantong Hornby Electronic Co ltd
Priority to CN201210423400.4A priority Critical patent/CN102931174B/zh
Publication of CN102931174A publication Critical patent/CN102931174A/zh
Application granted granted Critical
Publication of CN102931174B publication Critical patent/CN102931174B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/3701—Shape
    • H01L2224/37011—Shape comprising apertures or cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)

Abstract

本发明公开了一种微型表面贴装单相全波桥式整流器及其制造方法，由单片框架单元及下引脚单元构成；其单片框架单元和下引脚单元包括5个组成桥式整流电路的整流芯片的部件：输入端子两个一组、输出端子两个一组，连接跳线两个一组、芯片四个一组、及塑封体。本发明与现有技术相比具有以下优点：由于整流器的机构与已有技术相比其总厚度可减少一半的同时，还做到了杜绝因制作工序中材料切割的硬度对实现的芯片影响；当微型单相全波桥式整流器焊接到PCB板上后，由于从芯片（热源）到PCB板上焊点的垂直距离、横向距离非常短，故其间的热阻也会非常小，这将大大提高散热效率，使其工作得更加可靠。

Description

一种微型表面贴装单相全波桥式整流器及其制造方法
技术领域
本发明涉及一种微型半导体器件，尤其与微型单相全波桥式整流器及其制作方法有关。
背景技术
针对一个小电流（一般≦ 1A）的由交流到直流的变换几乎在所有的微型设备中是必需的。这个过程称为整流，其目的是为了提供一个供该设备工作之用的直流稳定电源。实现整流途径有两个：一是利用分立器件在PCB 板上组成整流电路实现整流变换，这种方式电路复杂，不利于微型化；二是使用集成化的具有整流功能的器件直接实现整流变换，这种器件的微型化程度依赖于器件封装过程中芯片在空间上的排列密度以及器件内的整流芯片在微空间上的精确定位。随着对小功率的设备的微型化要求的逐步提高，一方面PCB 上的表面贴装器件的密度越来越大，另一方面表面贴装器件的封装体积越来越小。不仅要板上面积占用小，而且要求在高度方向对空间的占用也越来越小，以适应设备越来越薄的要求。
已有技术的实现方法是将芯片叠放，从上到下形成焊盘+ 芯片+ 焊盘+ 芯片+ 焊盘的五层结构。由最上层连接两个芯片正极的焊盘引出作为整流桥的负极端子；由中间层分别连接上下两个芯片的两个焊盘引出作为整流桥的两个交流输入端子；由最下层连接两个芯片负极的焊盘引出作为整流桥的正极端子。四个端子均从塑封体的中间引出并向两边弯曲成欧翅形。虽然此种结构的整流桥的安装高度太高从而不能满足某些微型设备对一些表面贴装器件的薄封装的要求；引出端子太长在制造、使用过程中容易变形；芯片到PCB 版的散热路经太长会引入较大的热阻从而影响使用中的散热。
与本发明最接近的技术是专利号为200710071019.5，专利名称为：微型表面贴装单相全波桥式整流器及其制造方法的公开文献。该技术是通过将四个整流芯片进行菱形排列，形成相对紧凑的结构，并且将引线从塑封的底部直线引出，形成薄尺度的安装要求。但是该存在以
下缺点：1、菱形排列：由于塑封为方形结构，菱形排列的四个芯片均分布在塑封的四条边上，顶角非常接近塑封的边缘，受塑封胶料保护受限，芯片受损率提高，导致材料品质失效；
2、该文献公开的结构为两部分，在制作时，存在上下铜材切割，引起温度变化，增加横向剪切力，众所周知，芯片硅材料耐压但不耐剪切力，因此对芯片产生的硬力将严重影响产品的最终性能。
发明内容
本发明的目的是提供一种结构紧凑，芯片保护可靠性好，散热效率高，硬力影响小、适合于高密度、薄尺寸安装要求的微型表面贴装单相全波桥式整流器及制造方法。
为达到上述目的，本发明是通过以下技术方案实现的。微型表面贴装单相全波桥式整流器，由单片框架单元及下引脚单元构成；其单片框架单元和下引脚单元包括5 个组成桥式整流电路的整流芯片的部件：输入端子两个一组、输出端子两个一组，连接跳线两个一组、芯片四个一组、及塑封体；所述单片框架单元包括两个平焊盘、两个带凸点的焊盘、大框架、小框架，输出端子及连接跳线；大框架为端部与输出端子结合的部位带有梯度，整体为倒L 型，在水平的横面上设有两个平焊盘，小框架为端部与输出端子结合的部位带有梯度，整体为倒L 型，在水平的横面上设有两个带凸点的焊盘，大框架包在小框架的外侧，大小框架相对放置，平焊盘和带凸点的焊盘围成的空间形成一个方形；所述两个平焊盘为常规结构，两个带凸点的焊盘也为常规结构；所述下引脚单元和单片框架单元相对布置，所述下引脚单元上设有两个一组的输入端子；所述上下框架的连接方式：输入端子通过两个连接跳线分别与单片框架单元焊接；具体如下：连接跳线为两条，其中一条连接在同一垂直面上的平焊盘和一个带凸点的焊盘，另一条连接在另一同一垂直面上的平焊盘和一个带凸点的焊盘，两条连接跳线平行，端部均与输入端子连接；所述连接焊盘的连接跳线的结构为：与输入端子连接的端部为台阶状，连接跳线的本体为平直的板材，为了防止两条平行的连接跳线因间隔距离不够发生碰在一起形成短路，在平焊盘与带凸点的焊盘之间的连接体宽度变窄至以绝对不会引起连接为准；封装后，输入端子和输出端子均从塑封体的底部下延伸段处向两侧平直伸出，不作任何弯折，且上述四个端子共面。
进一步地，所述4 个组成桥式整流电路的整流芯片为玻璃钝化普通整流芯片、玻璃钝化快恢复整流芯片或肖特基整流芯片之一种。
进一步地，所述单片框架单元的平焊盘的形状多边形或圆形。
进一步地，所述下引脚单元和单片框架单元的连接筋为铜片。
本发明与现有技术相比具有以下优点：（一）是由于整流器的机构为：通过框架实现内部互联的四个整流芯片基本上在同一个平面内平铺，下框架仅为输出端子，其他部件集中在单片框架单元上，( 二)、是由于整流器的机构为：通过框架实现内部互联的四个整流芯片基本上在同一个平面内平铺，下框架仅为输出端子，其他部件集中在单片框架单元上，输入、输出端子由器件的底部引出并向两侧平直伸出，不作任何弯折，四个端子共面，与已有技术相比其总厚度可减少一半的同时，还做到了杜绝因制作工序中材料切割的硬度对实现的芯片影响；（三）是当微型单相全波桥式整流器焊接到PCB 板上后，由于从芯片（热源）到PCB 板上焊点的垂直距离、横向距离非常短，故其间的热阻也会非常小，这将大大提高散热效率，使其工作的更加可靠；（四）是在制造、使用过程中输入端子和输出端子从底部延伸出伸出，不易变形，在贴装过程中更易定位。（五）、芯片的排列采用P 型或N 型正列，比最接近的技术----- 菱形排列更能得到有效的保护，因为塑封胶料是方形，菱形列阵就使得芯片处于塑封的四边，芯片外围的胶料相对较少，影响保护。本结构通过排列方阵的不同解决该问题。
附图说明
图1 是本发明微型表面贴装单相全波桥式整流器的仰视结构示意图；
图2 是本发明微型表面贴装单相全波桥式整流器的俯视内部整流芯片排列结构示意图；
图3 是本发明微型表面贴装单相全波桥式整流器的下引脚单元侧视机构示意图；
图4 是本发明微型表面贴装单相全波桥式整流器的下引脚单元立体结构示意图。
具体实施方式
下面结合附图对本发明的实施例作进一步详细的描述。
实施例1 ：
如图1-4 所示，微型表面贴装单相全波式整流器，由单片框架单元 及下引脚单元构成；其单片框架单元和下引脚单元包括5个组成桥式整流电路的整流芯片的部件：输入端子1 两个一组、输出端子2 两个一组，连接跳线3 两个一组、芯片4 四个一组、及塑封体5。
单片框架单元包括两个平焊盘、两个带凸点的焊盘、大框架6c、小框架，输出端子2 及连接跳线3。大框架6c 为端部与输出端子结合的部位带有梯度，整体为倒L 型，在水平的横面上设有两个平焊盘，小框架为端部与输出端子结合的部位带有梯度，整体为倒L 型，在水平的横面上设有两个带凸点的焊盘，大框架6c 包在小框架的外侧，大小框架相对放置，平焊盘和带凸点的焊盘围成的空间形成一个方形。所述两个平焊盘为常规结构，两个带凸点的焊盘也为常规结构。
所述下引脚单元和单片框架单元相对布置，所述下引脚单元上设有两个一组的输入端子。
所述下引脚单元和单片框架单元 的连接筋为铜片。
所述上下框架的连接方式：输入端子通过两个连接跳线3分别与单片框架单元焊接；具体如下：
如图1 或2 所示，连接跳线3 为两条，其中一条连接在同一垂直面上的平焊盘和一个带凸点的焊盘，另一条连接在另一同一垂直面上的平焊盘和一个带凸点的焊盘，两条连接跳线3平行，端部均与输入端子1 连接。
连接焊盘的连接跳线3 的结构为：与输入端子1 连接的端部为台阶状，连接跳线3的本体为平直的板材，为了防止两条平行的连接跳线3 因间隔距离不够发生碰在一起形成短路，在平焊盘与带凸点的焊盘之间的连接体宽度变窄至以绝对不会引起连接为准。
将上述部件制作成成品，结构如图1-4 所示：
二条输出端子2 分别与大框架6c 和小框架为一个整体，在大框架6c 和小框架的平焊盘和带凸点的焊盘上分别用焊片按常规的焊接方式焊接正极或负极芯片，并在同一垂直平面的平焊盘和带凸点的焊盘上的芯片4上用焊片再焊接连接跳线3，并将连接跳线3 的端部与输入端子焊接，使整个机体形成通路。并且将输入端子1 和输出端子2 均从塑封体5的底部下延伸段处向两侧平直伸出，不作任何弯折，且上述四个端子共面。4 个组成桥式整流电路的整流芯片A 为玻璃钝化普通整流芯片。
本结构的优点：
1）芯片平行矩阵排列与环氧树脂保护黑胶边缘距离基本均等，有效降低外部机械力对芯片损伤；
2）芯片平行矩阵排列与环氧树脂保护黑胶边缘距离基本均等，可以实现器件工作时均匀的散热；
3）引脚对应芯片P 面（负极）使用内向135 度的折弯既保证了整流桥安装尺寸（横向2.5mm），又减缓了引脚所承受的外力对芯片影响。
实施例2 ：
4 个组成桥式整流电路的整流芯片A 为玻璃钝化快恢复整流芯片或肖特基整流芯片，平焊盘的形状为圆形，其余同实施例1。

Claims (4)

1.一种微型表面贴装单相全波桥式整流器，其特征在于：由单片框架单元及下引脚单元构成；其单片框架单元和下引脚单元包括5 个组成桥式整流电路的整流芯片的部件：输入端子（1）两个一组、输出端子（2）两个一组，连接跳线（3）两个一组、整流芯片（4）四个一组、及塑封体（5）；所述单片框架单元包括两个平焊盘、两个带凸点的焊盘、大框架、小框架，输出端子（2）及连接跳线（3）；大框架（6c）为端部与输出端子结合的部位带有梯度，整体为倒L 型，在水平的横面上设有两个平焊盘，小框架为端部与输出端子结合的部位带有梯度，整体为倒L 型，在水平的横面上设有两个带凸点的焊盘，大框架(6c) 包在小框架的外侧，大小框架相对放置，平焊盘和带凸点的焊盘围成的空间形成一个方形；所述两个平焊盘为常规结构，两个带凸点的焊盘也为常规结构；所述下引脚单元和单片框架单元相对布置，所述下引脚单元上设有两个一组的输入端子；所述的输入端子与单片框架单元的连接方式：输入端子通过两个连接跳线（3）分别与单片框架单元焊接；具体如下：连接跳线（3）为两条，其中一条连接在同一垂直面上的平焊盘和一个带凸点的焊盘，另一条连接在另一同一垂直面上的平焊盘和一个带凸点的焊盘，两条连接跳线（3）平行，端部均与输入端子（1）连接；所述连接焊盘的连接跳线（3）的结构为：与输入端子（1）连接的端部为台阶状，连接跳线（3）的本体为平直的板材，为了防止两条平行的连接跳线（3）因间隔距离不够发生碰在一起形成短路，在平焊盘与带凸点的焊盘之间的连接体宽度变窄至以绝对不会引起连接为准；封装后，输入端子（1）和输出端子（2）均从塑封体（5）的底部下延伸段处向两侧平直伸出，不作任何弯折，且上述四个端子共面。
2.根据权利要求1 所述的微型表面贴装单相全波桥式整流器，其特征在于：4个组成桥式整流电路的整流芯片(4) 为玻璃钝化普通整流芯片、玻璃钝化快恢复整流芯片或肖特基整流芯片之一种。
3.根据权利要求1 所述的微型表面贴装单相全波桥式整流器，其特征在于：所述单片框架单元的平焊盘的形状多边形或圆形。
4.根据权利要求1 所述的微型表面贴装单相全波桥式整流器，其特征在于：所述下引脚单元和单片框架单元的连接筋为铜片。
CN201210423400.4A 2012-10-30 2012-10-30 一种微型表面贴装单相全波桥式整流器及其制造方法 Active CN102931174B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210423400.4A CN102931174B (zh) 2012-10-30 2012-10-30 一种微型表面贴装单相全波桥式整流器及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210423400.4A CN102931174B (zh) 2012-10-30 2012-10-30 一种微型表面贴装单相全波桥式整流器及其制造方法

Publications (2)

Publication Number Publication Date
CN102931174A CN102931174A (zh) 2013-02-13
CN102931174B true CN102931174B (zh) 2015-03-25

Family

ID=47645941

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210423400.4A Active CN102931174B (zh) 2012-10-30 2012-10-30 一种微型表面贴装单相全波桥式整流器及其制造方法

Country Status (1)

Country Link
CN (1) CN102931174B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103474359B (zh) * 2013-09-10 2015-06-17 南通康比电子有限公司 D2pak整流二极管生产焊接工艺

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103401438B (zh) * 2013-08-13 2015-11-11 苏州工业园区凯众通微电子技术有限公司 表面贴装桥式整流器及其制造方法
CN107887353B (zh) * 2015-10-08 2020-03-24 苏州固锝电子股份有限公司 高可靠性整流桥堆器件
CN105185757B (zh) * 2015-10-08 2018-06-29 苏州固锝电子股份有限公司 散热片结构表面贴装整流桥器件
CN106449537A (zh) * 2016-03-25 2017-02-22 苏州固锝电子股份有限公司 散热片结构超薄型表面贴装整流桥器件
CN207781591U (zh) * 2017-10-31 2018-08-28 苏州固锝电子股份有限公司 高强度整流桥器件
CN109727938A (zh) * 2017-10-31 2019-05-07 苏州固锝电子股份有限公司 整流桥式半导体器件
CN108155180B (zh) * 2018-01-02 2024-04-09 敦南微电子（无锡）有限公司 一种大功率薄型贴片式桥堆整流器
CN108598073B (zh) * 2018-07-09 2024-02-23 山东晶导微电子股份有限公司 一种带输入保护的直插式整流桥器件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101373932A (zh) * 2007-08-25 2009-02-25 绍兴旭昌科技企业有限公司 微型表面贴装单相全波桥式整流器及其制造方法
CN201466022U (zh) * 2009-04-27 2010-05-12 绍兴旭昌科技企业有限公司 微型贴片二极管封装的引线框架与芯片连接结构
CN201515315U (zh) * 2009-09-24 2010-06-23 南通康比电子有限公司 一种桥式整流器df框架
CN201820754U (zh) * 2010-09-14 2011-05-04 南通康比电子有限公司 一种片式整流桥堆mbf封装结构
CN201937484U (zh) * 2010-11-02 2011-08-17 上海上斯电子有限公司 超薄型表面贴装桥式整流器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6329714B1 (en) * 1999-11-01 2001-12-11 General Semiconductor, Inc. Hybrid S.C. devices and method of manufacture thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101373932A (zh) * 2007-08-25 2009-02-25 绍兴旭昌科技企业有限公司 微型表面贴装单相全波桥式整流器及其制造方法
CN201466022U (zh) * 2009-04-27 2010-05-12 绍兴旭昌科技企业有限公司 微型贴片二极管封装的引线框架与芯片连接结构
CN201515315U (zh) * 2009-09-24 2010-06-23 南通康比电子有限公司 一种桥式整流器df框架
CN201820754U (zh) * 2010-09-14 2011-05-04 南通康比电子有限公司 一种片式整流桥堆mbf封装结构
CN201937484U (zh) * 2010-11-02 2011-08-17 上海上斯电子有限公司 超薄型表面贴装桥式整流器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103474359B (zh) * 2013-09-10 2015-06-17 南通康比电子有限公司 D2pak整流二极管生产焊接工艺

Also Published As

Publication number Publication date
CN102931174A (zh) 2013-02-13

Similar Documents

Publication Publication Date Title
CN102931174B (zh) 一种微型表面贴装单相全波桥式整流器及其制造方法
US8426963B2 (en) Power semiconductor package structure and manufacturing method thereof
CN101373932B (zh) 微型表面贴装单相全波桥式整流器及其制造方法
CN106997871B (zh) 一种功率模块的封装结构
CN102244066B (zh) 一种功率半导体模块
US9054040B2 (en) Multi-die package with separate inter-die interconnects
KR102041645B1 (ko) 전력반도체 모듈
US8217503B2 (en) Package structure for DC-DC converter
CN218730911U (zh) 一种内绝缘的双面散热封装结构
CN102983114A (zh) 具有超薄封装的高性能功率晶体管
CN204067352U (zh) 一种桥式整流器内部封装结构
CN104681525A (zh) 一种多芯片叠层的封装结构及其封装方法
CN106298724B (zh) 塑封型功率模块
CN202695428U (zh) 一种igbt功率模块
CN201118457Y (zh) 微型表面贴装单相全波桥式整流器
CN108281406B (zh) 一种功率器件封装结构及其制造方法
CN201985771U (zh) 超声波焊接机专用超大功率整流电力电子器件模块
CN204144239U (zh) 一种等面积大功率裸芯片的叠层装配结构
CN203398100U (zh) 新型散热结构的半导体芯片
TW201822322A (zh) 具有多晶粒層疊的覆晶封裝整流／保護型二極體元件
CN203746841U (zh) 功率半导体模块
CN207637790U (zh) 一种系统集成智能功率模块
CN202394862U (zh) 一种功率模块
CN209658160U (zh) 一种功率模块
CN216213374U (zh) 一种半导体器件堆叠封装结构

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant