CN204067352U - 一种桥式整流器内部封装结构 - Google Patents

一种桥式整流器内部封装结构 Download PDF

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CN204067352U
CN204067352U CN201420461295.8U CN201420461295U CN204067352U CN 204067352 U CN204067352 U CN 204067352U CN 201420461295 U CN201420461295 U CN 201420461295U CN 204067352 U CN204067352 U CN 204067352U
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wire jumper
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framework
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pad
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邱和平
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YANGXIN JINXIN ELECTRONICS Co Ltd
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Abstract

本实用新型涉及一种桥式整流器内部封装结构，包括封装本体，封装本体内设有若干对框架引脚和框架焊盘，其特征是：所述框架焊盘上设有框架焊盘凸点，框架焊盘上设有框架焊盘凸点的一面与下芯片的P面焊接，另一面与上芯片的N面焊接，下芯片的N面与下跳线焊接，上芯片的P面与上跳线焊接，上跳线上冲压有上跳线凸点。本实用新型的有益效果是：缓解了焊接交变应力，释放成型过程中出现的封装应力，而且匹配性好、本体高度减薄，散热性好，框架结构采用平面单片设计、跳线拼片焊接、平面单片设计利于焊接、成型过程中应力的释放，而且框架延展及表面平滑性好，本体高度减薄利于散热，封装尺寸范围广扩大至60Mil，芯片焊盘尺寸增加到1.6mm。

Description

一种桥式整流器内部封装结构
（一）        技术领域
    本实用新型涉及一种桥式整流器，特别涉及一种桥式整流器内部封装结构。
（二）        背景技术
 电子封装结构不仅关系到电路性能的可靠性和稳定性，而且对电路的电性能和热性能、整机的小型化和集成化，都有重要的作用。封装体保护芯片表面以及连接引线等，使芯片免受外力损坏及外部环境的影响，过高的温度会缩短芯片的寿命并导致芯片的损坏，可以通过封装，增加芯片的散热途径,提高其散热能力。同时，使芯片的热膨胀系数与基板、框架、连线等热膨胀系数相匹配，缓解由于热等外部环境的变化而产生的应力以及由于芯片自发热而产生的应力，从而防止芯片损坏失效。
现有的MINI桥式普通封装类型，有五片叠加、上下合片等封装结构形式，外形尺寸基本没有做出改进和变型，高度一般在2.5mm范围，其内部结构采用延伸引出铜引脚打弯后合片封装完成，局限于外形尺寸和内部结构，芯片封装尺寸大小受限，按照原有设计芯片尺寸仅能封到50 Mil，若需要继续大芯片封装，只能不断增加产品本体外形尺寸，致使散热性不好匹配；相应封装以后在固化交流交联过程中的热收缩及热膨胀系数、热导率、弹性模量和成本等变得不易控制，而且在焊接过程中由于引脚打弯导致合片以后凸点与芯片，芯片与焊盘在焊接过程中出现的交变应力无法避免，以及在塑封过程中本体与内部结构间存在的封装应力不易释放，芯片受到应力作用出现失效或者潜在失效，影响产品良率及可靠性。
（三）        发明内容
    本实用新型为了弥补现有技术的不足，提供了一种缓解焊接交变应力、释放成型过程中出现的封装应力、匹配性好、本体高度薄、散热性好、框架延展及表面平滑性好的桥式整流器内部封装结构。
本实用新型是通过如下技术方案实现的： 
一种桥式整流器内部封装结构，包括封装本体，封装本体内设有若干对框架引脚和框架焊盘，其特征是：所述框架焊盘上设有框架焊盘凸点，框架焊盘上设有框架焊盘凸点的一面与下芯片的P面焊接，另一面与上芯片的N面焊接，下芯片的N面与下跳线焊接，上芯片的P面与上跳线焊接，上跳线上冲压有上跳线凸点。
所述框架焊盘尺寸为1.6mm×1.6mm，框架焊盘凸点高度为0.1mm，框架焊盘的引脚尺寸为0.8mm×1.4mm，封装本体高度为2.0mm，上跳线凸点直径为0.3mm，框架引脚宽度为0.7mm，厚度为0.2mm，框架焊盘的引出引脚宽度为0.7mm，厚度为0.2mm。
所述框架焊盘、框架引脚、上跳线和下跳线与上芯片或下芯片之间用锡膏焊料焊接。
本实用新型的有益效果是：缓解了焊接交变应力，释放成型过程中出现的封装应力，而且匹配性好、本体高度减薄，散热性好，框架结构采用平面单片设计、跳线拼片焊接、平面单片设计利于焊接、成型过程中应力的释放，而且框架延展及表面平滑性好，本体高度减薄利于散热，封装尺寸范围广扩大至60Mil，芯片焊盘尺寸增加到1.6mm。 
（四）        附图说明
下面结合附图对本实用新型作进一步的说明。
附图1为本实用新型的俯视结构示意图；
附图2为本实用新型的后视结构示意图；
附图3为本实用新型的主视结构示意图；
附图4为本实用新型的上跳线的主视结构示意图；
附图5为本实用新型的上跳线的侧视结构示意图；
附图6为本实用新型的下跳线的主视结构示意图；
附图7为本实用新型的下跳线的侧视结构示意图；
图中，1封装本体，2框架引脚，3框架焊盘，4框架焊盘凸点，5下芯片，6上芯片，7下跳线,8上跳线,9上跳线凸点。
（五）        具体实施方式
附图为本实用新型的一种具体实施例。该实施例包括封装本体1，封装本体1内设有若干对框架引脚2和框架焊盘3，框架焊盘3上设有框架焊盘凸点4，框架焊盘3上设有框架焊盘凸点4的一面与下芯片5的P面焊接，另一面与上芯片6的N面焊接，下芯片5的N面与下跳线7焊接，上芯片6的P面与上跳线8焊接，上跳线8上冲压有上跳线凸点9。框架焊盘3尺寸为1.6mm×1.6mm，框架焊盘凸点4高度为0.1mm，框架焊盘3的引脚尺寸为0.8mm×1.4mm，封装本体1高度为2.0mm，上跳线凸点9直径为0.3mm，框架引脚2宽度为0.7mm，厚度为0.2mm，框架焊盘3的引出引脚宽度为0.7mm，厚度为0.2mm。框架焊盘3、框架引脚2、上跳线8和下跳线7与上芯片6或下芯片5之间用锡膏焊料焊接。
采用本实用新型的一种桥式整流器内部封装结构，结构为四颗芯片两上、两下焊接于平面单片框架焊盘3上、下；平面单片框架焊盘3尺寸为1.6mm×1.6mm，冲压高度0.1mm凸点，对面引脚尺寸面积为0.8mm×1.4mm，拼片使用的上跳线8、下跳线7与0.8mm×1.4mm两只引脚焊接，焊盘引脚2两个凸点突出面与芯片P面焊接，凹面与芯片N面焊接，上跳线8冲压有凸点，上跳线8与框架上结构两颗芯片P面焊接，上跳线8折弯部与焊盘对面引脚焊接，下跳线7与下结构两颗芯片N面焊接，跳线折弯部与焊盘对面另一只引脚焊接，塑封成型完毕后，将四只伸出引脚用模具冲压分离为“海鸥”脚型，塑封本体高度为2.0mm。封装上结构芯片由上跳线8与芯片焊接，上跳线7设有直径为0.3mm凸点，上跳线凸点9垂线位置与平面框架冲压之凸点位置相重合，上跳线7折弯后平面与框架引脚2焊接，框架引脚2宽度为0.7mm，厚度为0.2mm，框架焊盘3引出引脚宽度为0.7mm，厚度为0.2mm；封装下结构芯片由下跳线7与芯片焊接，下跳线7为平面性，跳线中心位置与与平面框架冲压之凸点垂线位置相重合，下跳线7折弯后平面与框架另一只引脚焊接，下跳线7平面与芯片N面焊接，框架引脚2宽度为0.7mm，厚度为0.2mm，框架焊盘3引出引脚宽度为0.7mm，厚度为0.2mm；
采用本实用新型的一种桥式整流器内部封装结构， 上芯片6两颗焊接于框架焊盘3之上，上芯片6的N面与焊盘凹面焊接，上跳线8被冲压出的上跳线凸点9与上芯片6的P面用锡膏焊料焊接，上跳线8折弯后平面与框架引脚2焊接，结构上部焊接完毕；翻转框架180°，下芯片5的P面与框架焊盘3冲压出的框架焊盘凸点4用锡膏焊料焊接，下芯片5的N面与下跳线7焊接，下跳线7折弯后平面与框架引脚2焊接；结构焊接完毕。框架引脚2，框架焊盘3引脚延伸引出封装本体1之外，塑封成型后，使用成型模具将引出之引脚弯脚成型为“海鸥”脚型；封装本体1高度为2.0mm，引脚跨距为6.8mm，引脚中心距为2.5mm，引脚宽0.7mm，框架厚度0.2mm。     
采用本实用新型的一种桥式整流器内部封装结构，采用上跳线8、下跳线7与平面框架拼片焊接设计，上、下跳线压弯后与平面框架引脚用焊料焊接时预留出焊接应力余量，有效缓解跳线、框架、芯片之间的交变应力，免除了在焊接中出现漂移、偏位弊端；而且在跳线打弯后的平面设计中增大平面与框架引脚的焊接面积满足了焊接条件的要求；采用超薄式0.2mm厚度低应力纯铜框架，铜带高温性能好，引脚设计为0.7mm，增加了散热面积，利于芯片和工作时的热量消散，与锡膏焊料粘接性好，耐高温，匹配性好，平面框架在焊接、成型过程中膨胀、收缩率小且尺寸稳定，减小应力影响，采用本实用新型封装结构框架焊盘尺寸可以设计为1.6×1.6mm，封装芯片尺寸增大至60Mil，本体2.0mm厚度更能满足导电导热性能，封装后强度好，以其小型化、薄型化封装,提高Ｔj温度、扁平“海鸥”外形引脚内部引出的封装方式都是为了提高封装的散热性能。 

Claims (3)

1.一种桥式整流器内部封装结构，包括封装本体（1），封装本体（1）内设有若干对框架引脚（2）和框架焊盘（3），其特征是：所述框架焊盘（3）上设有框架焊盘凸点（4），框架焊盘（3）上设有框架焊盘凸点（4）的一面与下芯片（5）的P面焊接，另一面与上芯片（6）的N面焊接，下芯片（5）的N面与下跳线（7）焊接，上芯片（6）的P面与上跳线（8）焊接，上跳线（8）上冲压有上跳线凸点（9）。
2.根据权利要求1所述的一种桥式整流器内部封装结构，其特征是：所述框架焊盘（3）尺寸为1.6mm×1.6mm，框架焊盘凸点（4）高度为0.1mm，框架焊盘（3）的引脚尺寸为0.8mm×1.4mm，封装本体（1）高度为2.0mm，上跳线凸点（9）直径为0.3mm，框架引脚（2）宽度为0.7mm，厚度为0.2mm，框架焊盘（3）的引出引脚宽度为0.7mm，厚度为0.2mm。
3.根据权利要求1所述的一种桥式整流器内部封装结构，其特征是：所述框架焊盘（3）、框架引脚（2）、上跳线（8）和下跳线（7）与上芯片（6）或下芯片（5）之间用锡膏焊料焊接。
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CN105514056A (zh) * 2016-01-15 2016-04-20 中山芯达电子科技有限公司 一种利于热量散逸的芯片封装结构
CN105679737A (zh) * 2016-01-15 2016-06-15 中山芯达电子科技有限公司 一种多芯片封装结构
CN107275306A (zh) * 2016-04-07 2017-10-20 达尔科技股份有限公司 封装中的堆叠整流器
CN108736743A (zh) * 2018-07-09 2018-11-02 山东晶导微电子股份有限公司 一种带输出保护的直插式整流桥器件
CN110098128A (zh) * 2019-05-16 2019-08-06 强茂电子(无锡)有限公司 半导体桥式整流器的制作方法
CN110289217A (zh) * 2019-06-11 2019-09-27 扬州扬杰电子科技股份有限公司 一种功率模块的封装工艺

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105514056A (zh) * 2016-01-15 2016-04-20 中山芯达电子科技有限公司 一种利于热量散逸的芯片封装结构
CN105679737A (zh) * 2016-01-15 2016-06-15 中山芯达电子科技有限公司 一种多芯片封装结构
CN107275306A (zh) * 2016-04-07 2017-10-20 达尔科技股份有限公司 封装中的堆叠整流器
CN107275306B (zh) * 2016-04-07 2019-06-28 达尔科技股份有限公司 封装中的堆叠整流器
CN108736743A (zh) * 2018-07-09 2018-11-02 山东晶导微电子股份有限公司 一种带输出保护的直插式整流桥器件
CN108736743B (zh) * 2018-07-09 2024-05-24 山东晶导微电子股份有限公司 一种带输出保护的直插式整流桥器件
CN110098128A (zh) * 2019-05-16 2019-08-06 强茂电子(无锡)有限公司 半导体桥式整流器的制作方法
CN110289217A (zh) * 2019-06-11 2019-09-27 扬州扬杰电子科技股份有限公司 一种功率模块的封装工艺

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