CN103401438B - 表面贴装桥式整流器及其制造方法 - Google Patents

表面贴装桥式整流器及其制造方法 Download PDF

Info

Publication number
CN103401438B
CN103401438B CN201310349903.6A CN201310349903A CN103401438B CN 103401438 B CN103401438 B CN 103401438B CN 201310349903 A CN201310349903 A CN 201310349903A CN 103401438 B CN103401438 B CN 103401438B
Authority
CN
China
Prior art keywords
lead frame
frame unit
welding
lower lead
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201310349903.6A
Other languages
English (en)
Other versions
CN103401438A (zh
Inventor
朱艳玲
Original Assignee
SUZHOU INDUSTRIAL PARK KAIZHONGTONG MICRO-ELECTRONIC TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUZHOU INDUSTRIAL PARK KAIZHONGTONG MICRO-ELECTRONIC TECHNOLOGY Co Ltd filed Critical SUZHOU INDUSTRIAL PARK KAIZHONGTONG MICRO-ELECTRONIC TECHNOLOGY Co Ltd
Priority to CN201310349903.6A priority Critical patent/CN103401438B/zh
Publication of CN103401438A publication Critical patent/CN103401438A/zh
Application granted granted Critical
Publication of CN103401438B publication Critical patent/CN103401438B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4007—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8434—Bonding interfaces of the connector
    • H01L2224/84345—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)

Abstract

本发明揭示了一种表面贴装桥式整流器及其制造方法。所述整流器包括4个组成桥式整流电路的整流芯片、输入端子、输出端子、塑封体、上引线框架单元以及下引线框架单元。其中，多个上、下引线框架单元呈阵列排布而分别组成上、下引线框架；下引线框架单元采用弯折的整流芯片焊接平面结构；输入端子和输出端子均从塑封体的底部向两侧平直伸出，不作任何弯折，各个端子共面。其制造方法为：涂焊接材料——放置整流芯片——组装——焊接——塑封——切筋——电镀。本发明具有布局更合理，可靠性更好，散热性能更好，生产效率更高等特点，在同类产品外形尺寸相同的情况下，可以封装更大功率的桥式整流器件。

Description

表面贴装桥式整流器及其制造方法
技术领域
本发明涉及一种半导体器件，尤其涉及一种表面贴装桥式整流器及其制造方法。
背景技术
针对一个小电流由交流到直流的变换几乎在所有的设备中是必需的。这个过程称为整流，其目的是为了提供一个供该设备工作之用的直流稳定电源。实现整流途径有两个：一是利用分立器件在PCB板上组成整流电路实现整流变换，这种方式电路复杂，不利于微型化；二是使用集成化的具有整流功能的器件直接实现整流变换，这种器件的微型化程度依赖于器件封装过程中芯片在空间上的排列密度以及器件内的整流芯片在微空间上的精确定位。随着对小功率的设备的微型化要求的逐步提高，一方面PCB上的表面贴装器件的密度越来越大，另一方面表面贴装器件的封装体积越来越小。不仅要板上面积占用小，而且要求在高度方向对空间的占用也越来越小，以适应设备越来越薄的要求。
专利第200710071019.5号以及专利第201210575976.2号分别公开了两种微型表面贴装整流器。其中，专利200710071019.5中上引线框架和下引线框架采用单排结构以及整流芯片外轮廓线布局呈平行四边形，于是造成了在实际应用中上、下引线框架组合在一起的产品数量较少，一般不会超过50个，并且内部芯片排布不合理，占据空间大。而专利201210575976.2在生产时，整流芯片先放置在框架凸台上，再放置桥接片，并且完成一次引线框架的产品，桥接片需要单独多次放置。于是造成了由于整流芯片在凸点上平稳度不好，在高温回流中，容易造成整流芯片和桥接片的旋转和移位，产生质量问题，并且产品内部焊接点较多，整理芯片、桥接片和输出端之间总共有10个焊接点，不仅造成了由于焊接点多增加传导热阻，降低了散热性能，而且还造成了空间的浪费，使器件不能做的更小。
发明内容
本发明的目的在于针对现有技术中的上述缺陷，提供一种布局更合理，可靠性更好，散热性能更好，生产效率更高的表面贴装桥式整流器及其制造方法。
为实现上述发明目的，本发明采用了如下技术方案：一种表面贴装桥式整流器，包括4个组成桥式整流电路的整流芯片，输入端子、输出端子塑封体、上引线框架单元以及下引线框架单元。上引线框架单元包括2个金属片，在每个金属片上分别设置1个焊接平面和1个焊接凸台，2个整流芯片的负极分别与2个焊接平面连接；
下引线框架单元包括2个金属片，其中一个金属片上设置1个焊接平面，另一个金属片上设置1个焊接凸台和1个焊接平面，另2个整流芯片的负极同时与焊接平面连接；
上引线框架单元上的2个焊接凸台与置于下引线框架单元焊接平面上的整流芯片的正极连接，下引线框架单元上的焊接凸台和焊接平面与置于上引线框架单元焊接平面上的整流芯片的正极连接，输入端子从上引线框架单元引出，输出端子从下引线框架单元引出。
一种制造表面贴装桥式整流器的制造方法，其特征在于其包括如下步骤：
a、涂焊接材料：分别在每个上引线框架单元和下引线框架单元上的焊接平面以及焊接凸台上沾涂焊接材料，
b、放置整流芯片：将整流芯片分别放置在每个上引线框架单元和下引线框架单元上的焊接平面上并且使整流芯片的正极朝上，
c、组装：把由多个上引线框架单元阵列而成的上引线框架平放在专用的定位治具上，并把由多个下引线框架单元阵列而成的下引线框架翻转后，按照设定的位置，放置在下引线框架上，
d、焊接：把载有上引线框架和下引线框架的定位治具送入高温回流炉中，使得上、下引线框架焊接组合在一起，
e、塑封：用塑封材料把组合在一起的上、下引线框架进行塑封成型，
f、切筋：按照设定的尺寸，把成型后的整流器从上、下引线框架上分离，
g、电镀：对成型后的整流器上的四个引出端子进行电镀。
此外，本发明还提供如下附属技术方案：
输入端子和输出端子均从塑封体的底部向两侧平直伸出，不作任何弯折，其上述四个端子共面。
金属片还设置有位于焊接凸台和焊接平面之间的主体部，焊接凸台是由主体部部分向外凸起延伸而形成的一个凸起平台，焊接平面由主体部的另一端斜向上弯折而成，焊接凸台与焊接平面处于同一平面。
焊接凸台的形状为圆形或方形。
整流芯片为玻璃钝化普通整流芯片、玻璃钝化快恢复整流芯片或肖特基整流芯片之一种。
上、下引线框架包括连接件和筋，其中，连接件连接多个上、下引线框架单元，筋连接多个连接件。
连接件连接的上引线框架单元或下引线框架单元数量可超过300个。
相比于现有技术，本发明的优势在于：(一)是由于上、下引线框架单元的排布结构为阵列排布，使得上、下引线框架组合在一起的产品数量较多，可超过了300个，高于现有技术的产品数量；(二)是在同类产品外形尺寸相同的情况下，本发明的产品可以封装更大功率的桥式整流器件，若在同等功率条件下，本发明可以把桥式整流器尺寸做得更小；(三)是下引线框架采用折弯的整流芯片焊接平面结构，节省了空间，使得输出端子和输出端子可以做得更宽，大大提高了散热效率。
附图说明
图1是本发明表面贴装桥式整流器的结构示意图。
图2是本发明表面贴装桥式整流器的俯视内部整流芯片排列结构示意图。
图3是本发明表面贴装桥式整流器的上引线框架结构示意图。
图4是本发明表面贴装桥式整流器的上引线框架单元主视结构示意图。
图5是本发明表面贴装桥式整流器的上引线框架单元俯视结构示意图。
图6是本发明表面贴装桥式整流器的上引线框架单元的俯视内部整流芯片排列结构示意图。
图7是本发明表面贴装桥式整流器的下引线框架结构示意图。
图8是本发明表面贴装桥式整流器的下引线框架单元主视结构示意图。
图9是本发明表面贴装桥式整流器的下引线框架单元俯视结构示意图。
图10是图9中沿I-I线的截面图。
图11是本发明表面贴装桥式整流器的下引线框架单元的俯视内部整流芯片排列结构示意图。
具体实施方式
以下结合较佳实施例及其附图对本发明技术方案作进一步非限制性的详细说明。
实施例1：参照图1和图2所示，表面贴装桥式整流器，包括4个组成桥式整流电路的整流芯片31，输入端子5、输出端子6、塑封体50、上引线框架单元10以及下引线框架单元20。其中，整流芯片31轮廓外部组成规则的矩形或正方形，并且其通过焊接材料40与上、下引线框架单元10、20连接。
参照图3至图6所示，上引线框架单元10包括2个金属片9a、9b，在金属片9a、9b上分别设置1个第一焊接平面12和1个焊接凸台11，2个整流芯片31的负极分别与2个第一焊接平面12连接。
参照图7至图11所示，下引线框架单元20包括2个金属片9c和9d，其中金属片9c上设置1个第二焊接平面23，该第二焊接平面23可同时连接2个整流芯片31。另一个金属片9d上设置1个焊接凸台21和1个第三焊接平面22。具体地，金属片9d还设置有位于焊接凸台21和第三焊接平面22之间的主体部26，焊接凸台21是由主体部26部分向外凸起延伸而形成的一个凸起平台，第三焊接平面22由主体部26的另一端斜向上弯折而成，焊接凸台21与第三焊接平面22处于同一平面。剩余的2个整流芯片31的负极同时与第二焊接平面23连接。
上引线框架单元10上的2个焊接凸台11与置于下引线框架单元20第二焊接平面23上的整流芯片31的正极连接，下引线框架单元20上的焊接凸台21和第三焊接平面22与置于上引线框架单元10第一焊接平面12上的整流芯片31的正极连接，输入端子5从上引线框架单元10引出，输出端子6从下引线框架单元20引出，输入端子5和输出端子5均从塑封体50的底部向两侧平直伸出，不作任何弯折，其上述四个端子共面，4个组成桥式整流电路的整流芯片31为玻璃钝化普通整流芯片，焊接凸台11、21的形状为圆形。
实施例2：4个组成桥式整流电路的整流芯片31为玻璃钝化快恢复整流芯片或肖特基整流芯片，焊接凸台11、21的形状为方形，其余同实施例1。
实施例3：一种制造表面贴装桥式整流器的方法为：a、涂焊接材料：分别在每个上引线框架单元10和下引线框架单元20上的焊接平面12、22、23以及焊接凸台11、21上沾涂焊接材料40，b、放置整流芯片：将整流芯片31分别放置在每个上引线框架单元10和下引线框架单元20上的焊接平面12、23上并且使整流芯片31的正极朝上，c、组装：把由多个上引线框架单元10阵列而成的上引线框架1平放在专用的定位治具上，并把由多个下引线框架单元20阵列而成的下引线框架2翻转后，按照设定的位置，放置在上引线框架1上，d、焊接：把载有上引线框架1和下引线框架2的定位治具送入高温回流炉中，使得上、下引线框架1、2焊接组合在一起，e、塑封：用塑封材料50把组合在一起的上、下引线框架1、2进行塑封成型，f、切筋：按照设定的尺寸，把成型后的整流器从上、下引线框架1、2上分离，g、电镀：对成型后的整流器上的四个引出端子5、6进行电镀。
上引线框架1或下引线框架1包括连接件34和筋36，其中，连接件34连接多个上引线框架单元10或下引线框架单元20，筋36连接多个连接件34。连接件34连接的上引线框架单元10或下引线框架单元20数量可超过300个。
需要指出的是，上述较佳实施例仅为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施，并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围之内。

Claims (8)

1.一种表面贴装桥式整流器，包括4个组成桥式整流电路的整流芯片(31)、输入端子(5)、输出端子(6)以及塑封体(50)，其特征在于其还包括上引线框架单元(10)以及下引线框架单元(20)；上引线框架单元(10)包括2个金属片9a、9b，在每个金属片9a、9b上分别设置1个第一焊接平面(12)和1个焊接凸台(11)，2个整流芯片(31)的负极分别与2个第一焊接平面(12)连接；
下引线框架单元(20)包括2个金属片9c、9d，其中一个金属片9c上设置1个第二焊接平面(23)，另一个金属片9d上设置1个焊接凸台(21)和1个第三焊接平面(22)，另2个整流芯片(31)的负极同时与第二焊接平面(23)连接；
上引线框架单元(10)上的2个焊接凸台(11)与置于下引线框架单元(20)第二焊接平面(23)上的整流芯片(31)的正极连接，下引线框架单元(20)上的焊接凸台(21)和第三焊接平面(22)与置于上引线框架单元(10)第一焊接平面(12)上的整流芯片(31)的正极连接，输入端子(5)从上引线框架单元(10)引出，输出端子(6)从下引线框架单元(20)引出。
2.根据权利要求1所述的表面贴装桥式整流器，其特征在于：两个输入端子(5)和两个输出端子(6)均从塑封体(50)的底部向两侧平直伸出，不作任何弯折，其上述两个输入端子(5)和两个输出端子(6)共面。
3.根据权利要求1所述的表面贴装桥式整流器，其特征在于：金属片9d还设置有位于焊接凸台(21)和第三焊接平面(22)之间的主体部(26)，焊接凸台(21)是由主体部(26)部分向外凸起延伸而形成的一个凸起平台，第三焊接平面(22)由主体部(26)的另一端斜向上弯折而成，焊接凸台(21)与第三焊接平面(22)处于同一平面。
4.根据权利要求1所述的表面贴装桥式整流器，其特征在于：焊接凸台(11、21)的形状为圆形或方形。
5.根据权利要求1所述的表面贴装桥式整流器，其特征在于：整流芯片(31)为玻璃钝化普通整流芯片、玻璃钝化快恢复整流芯片或肖特基整流芯片之一种。
6.一种如权利要求1至5任一项所述的表面贴装桥式整流器的制造方法，其特征在于其包括如下步骤：
a、涂焊接材料：分别在每个上引线框架单元(10)和下引线框架单元(20)上的第一、二、三焊接平面(12、22、23)以及焊接凸台(11、21)上沾涂焊接材料(40)，
b、放置整流芯片：将整流芯片(31)分别放置在每个上引线框架单元(10)和下引线框架单元(20)上的第一、二焊接平面(12、23)上并且使整流芯片(31)的正极朝上，
c、组装：把由多个上引线框架单元(10)阵列而成的上引线框架(1)平放在专用的定位治具上，并把由多个下引线框架单元(20)阵列而成的下引线框架(2)翻转后，按照设定的位置，放置在下引线框架(1)上，
d、焊接：把载有上引线框架(1)和下引线框架(2)的定位治具送入高温回流炉中，使得上、下引线框架(1、2)焊接组合在一起，
e、塑封：用塑封材料(50)把组合在一起的上、下引线框架(1、2)进行塑封成型，
f、切筋：按照设定的尺寸，把成型后的整流器从上、下引线框架(1,2)上分离，
g、电镀：对成型后的整流器上的四个引出端子(5、6)进行电镀。
7.根据权利要求6所述的表面贴装桥式整流器的制造方法，其特征在于：上、下引线框架(1、2)包括连接件(34)和筋(36)，其中，连接件(34)连接多个上、下引线框架单元(10、20)，筋(36)连接多个连接件(34)。
8.根据权利要求7所述的表面贴装桥式整流器的制造方法，其特征在于：连接件(34)连接的上引线框架单元(10)或下引线框架单元(20)数量可超过300个。
CN201310349903.6A 2013-08-13 2013-08-13 表面贴装桥式整流器及其制造方法 Expired - Fee Related CN103401438B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310349903.6A CN103401438B (zh) 2013-08-13 2013-08-13 表面贴装桥式整流器及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310349903.6A CN103401438B (zh) 2013-08-13 2013-08-13 表面贴装桥式整流器及其制造方法

Publications (2)

Publication Number Publication Date
CN103401438A CN103401438A (zh) 2013-11-20
CN103401438B true CN103401438B (zh) 2015-11-11

Family

ID=49565007

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310349903.6A Expired - Fee Related CN103401438B (zh) 2013-08-13 2013-08-13 表面贴装桥式整流器及其制造方法

Country Status (1)

Country Link
CN (1) CN103401438B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465594A (zh) * 2014-11-21 2015-03-25 朱艳玲 带内嵌式散热片的整流元器件及其制造方法
CN108807302A (zh) * 2015-10-08 2018-11-13 苏州固锝电子股份有限公司 整流桥式半导体器件
CN107887353B (zh) * 2015-10-08 2020-03-24 苏州固锝电子股份有限公司 高可靠性整流桥堆器件
CN106449537A (zh) * 2016-03-25 2017-02-22 苏州固锝电子股份有限公司 散热片结构超薄型表面贴装整流桥器件
CN105789168A (zh) * 2016-05-11 2016-07-20 山东迪电子科技有限公司 半导体器件芯片焊接用的跳线框架
CN205911308U (zh) * 2016-08-05 2017-01-25 苏州固锝电子股份有限公司 紧凑设计型整流桥结构
CN107331628A (zh) * 2017-08-07 2017-11-07 山东晶导微电子有限公司 一种电子元器件焊接装置和工艺
CN107316859A (zh) * 2017-08-07 2017-11-03 捷捷半导体有限公司 一种双芯片横向串联型的二极管封装结构和制造方法
WO2019210651A1 (zh) * 2018-05-03 2019-11-07 扬州虹扬科技发展有限公司 一种超薄微型桥堆整流器
CN111463177A (zh) * 2020-04-09 2020-07-28 深圳基本半导体有限公司 一种功率模块及其应用方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5642276A (en) * 1995-02-08 1997-06-24 Lucent Technologies Inc. High frequency surface mount transformer-diode power module
CN201118457Y (zh) * 2007-08-25 2008-09-17 绍兴旭昌科技企业有限公司 微型表面贴装单相全波桥式整流器
CN201142329Y (zh) * 2008-01-14 2008-10-29 乐山希尔电子有限公司 塑封型整流模块
CN101373932A (zh) * 2007-08-25 2009-02-25 绍兴旭昌科技企业有限公司 微型表面贴装单相全波桥式整流器及其制造方法
CN201413823Y (zh) * 2009-05-21 2010-02-24 绍兴旭昌科技企业有限公司 表面贴装双芯片二极管整流器件
CN201937484U (zh) * 2010-11-02 2011-08-17 上海上斯电子有限公司 超薄型表面贴装桥式整流器
CN102931174A (zh) * 2012-10-30 2013-02-13 南通康比电子有限公司 一种微型表面贴装单相全波桥式整流器及其制造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5642276A (en) * 1995-02-08 1997-06-24 Lucent Technologies Inc. High frequency surface mount transformer-diode power module
CN201118457Y (zh) * 2007-08-25 2008-09-17 绍兴旭昌科技企业有限公司 微型表面贴装单相全波桥式整流器
CN101373932A (zh) * 2007-08-25 2009-02-25 绍兴旭昌科技企业有限公司 微型表面贴装单相全波桥式整流器及其制造方法
CN201142329Y (zh) * 2008-01-14 2008-10-29 乐山希尔电子有限公司 塑封型整流模块
CN201413823Y (zh) * 2009-05-21 2010-02-24 绍兴旭昌科技企业有限公司 表面贴装双芯片二极管整流器件
CN201937484U (zh) * 2010-11-02 2011-08-17 上海上斯电子有限公司 超薄型表面贴装桥式整流器
CN102931174A (zh) * 2012-10-30 2013-02-13 南通康比电子有限公司 一种微型表面贴装单相全波桥式整流器及其制造方法

Also Published As

Publication number Publication date
CN103401438A (zh) 2013-11-20

Similar Documents

Publication Publication Date Title
CN103401438B (zh) 表面贴装桥式整流器及其制造方法
CN101373932B (zh) 微型表面贴装单相全波桥式整流器及其制造方法
CN105261459B (zh) 电子元件及其制造方法
CN101859755B (zh) 一种功率mosfet封装体及其封装方法
CN102646606B (zh) Ic卡模块的封装方法
US20120273932A1 (en) Power supply module and packaging and integrating method thereof
CN102263094A (zh) 非互联型多芯片封装二极管
CN201413823Y (zh) 表面贴装双芯片二极管整流器件
CN102832139B (zh) 四侧无引脚扁平封装体的封装方法及封装体
CN109273375B (zh) 一种融合smt的mcm集成电路封装方法
CN201118457Y (zh) 微型表面贴装单相全波桥式整流器
CN208336200U (zh) 芯片封装体
JP2008294390A (ja) モジュール構成
CN202084542U (zh) 贴片直列式小型桥堆
CN106098649A (zh) 大功率贴片元件及其加工工装、制作方法
CN203026496U (zh) 一种多电源ic芯片封装件
CN105513977A (zh) 一种智能功率模块及其封装方法
CN108962844A (zh) 芯片封装体及封装方法
CN100446230C (zh) 半导体封装结构及其制法
CN201657457U (zh) 小功率单向全波桥式整流器
CN202495446U (zh) 一种新型结构晶闸管
CN204332941U (zh) 一种三维叠层封装结构
CN210429794U (zh) 一种半导体模块及封装结构
CN104600047A (zh) 功率模块及其封装方法
CN212412077U (zh) 一种led倒装芯片封装器件

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20170914

Address after: 1202 room 74, new garden, new garden, Suzhou Industrial Park, Jiangsu, 215000

Patentee after: Zhu Yanling

Address before: 215000, No. 18, cross spring road, Jiangsu Town, Suzhou Industrial Park, China

Patentee before: Suzhou Industrial Park Kaizhongtong Micro-Electronic Technology Co., Ltd.

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20151111

Termination date: 20190813

CF01 Termination of patent right due to non-payment of annual fee