CN102916042A - 逆导igbt器件结构及制造方法 - Google Patents
逆导igbt器件结构及制造方法 Download PDFInfo
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- CN102916042A CN102916042A CN2012103724010A CN201210372401A CN102916042A CN 102916042 A CN102916042 A CN 102916042A CN 2012103724010 A CN2012103724010 A CN 2012103724010A CN 201210372401 A CN201210372401 A CN 201210372401A CN 102916042 A CN102916042 A CN 102916042A
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014206174A1 (zh) * | 2013-06-24 | 2014-12-31 | 无锡华润上华半导体有限公司 | 非穿通型反向导通绝缘栅双极型晶体管的制造方法 |
CN104282552A (zh) * | 2013-07-03 | 2015-01-14 | 无锡华润上华半导体有限公司 | 一种igbt的制造方法 |
WO2015024502A1 (zh) * | 2013-08-23 | 2015-02-26 | 无锡华润上华半导体有限公司 | 反向导通绝缘栅双极型晶体管制造方法 |
CN104681431A (zh) * | 2013-12-03 | 2015-06-03 | 江苏中科物联网科技创业投资有限公司 | 半导体器件制作方法 |
CN104992968A (zh) * | 2015-06-01 | 2015-10-21 | 电子科技大学 | 一种绝缘栅双极型晶体管及其制造方法 |
CN106409895A (zh) * | 2016-06-27 | 2017-02-15 | 电子科技大学 | 一种绝缘栅双极晶体管及其制造方法 |
CN108899362A (zh) * | 2018-08-22 | 2018-11-27 | 江苏中科君芯科技有限公司 | 平面栅igbt器件 |
Citations (5)
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US4857983A (en) * | 1987-05-19 | 1989-08-15 | General Electric Company | Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication |
US5702961A (en) * | 1995-12-30 | 1997-12-30 | Samsung Electronics Co., Ltd. | Methods of forming insulated gate bipolar transistors having built-in freewheeling diodes and transistors formed thereby |
JP2002190596A (ja) * | 2000-12-21 | 2002-07-05 | Toshiba Corp | 半導体装置の製造方法 |
CN1439172A (zh) * | 2000-05-05 | 2003-08-27 | 国际整流器公司 | 用于穿通非外延型绝缘栅双极型晶体管的缓冲区的氢注入 |
JP4746927B2 (ja) * | 2005-07-01 | 2011-08-10 | 新電元工業株式会社 | 半導体装置の製造方法 |
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2012
- 2012-09-28 CN CN201210372401.0A patent/CN102916042B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US4857983A (en) * | 1987-05-19 | 1989-08-15 | General Electric Company | Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication |
US5702961A (en) * | 1995-12-30 | 1997-12-30 | Samsung Electronics Co., Ltd. | Methods of forming insulated gate bipolar transistors having built-in freewheeling diodes and transistors formed thereby |
CN1439172A (zh) * | 2000-05-05 | 2003-08-27 | 国际整流器公司 | 用于穿通非外延型绝缘栅双极型晶体管的缓冲区的氢注入 |
JP2002190596A (ja) * | 2000-12-21 | 2002-07-05 | Toshiba Corp | 半導体装置の製造方法 |
JP4746927B2 (ja) * | 2005-07-01 | 2011-08-10 | 新電元工業株式会社 | 半導体装置の製造方法 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014206174A1 (zh) * | 2013-06-24 | 2014-12-31 | 无锡华润上华半导体有限公司 | 非穿通型反向导通绝缘栅双极型晶体管的制造方法 |
CN104282552A (zh) * | 2013-07-03 | 2015-01-14 | 无锡华润上华半导体有限公司 | 一种igbt的制造方法 |
WO2015024502A1 (zh) * | 2013-08-23 | 2015-02-26 | 无锡华润上华半导体有限公司 | 反向导通绝缘栅双极型晶体管制造方法 |
US9673193B2 (en) | 2013-08-23 | 2017-06-06 | Csmc Technologies Fab1 Co., Ltd. | Manufacturing method for reverse conducting insulated gate bipolar transistor |
CN104681431A (zh) * | 2013-12-03 | 2015-06-03 | 江苏中科物联网科技创业投资有限公司 | 半导体器件制作方法 |
CN104992968A (zh) * | 2015-06-01 | 2015-10-21 | 电子科技大学 | 一种绝缘栅双极型晶体管及其制造方法 |
CN104992968B (zh) * | 2015-06-01 | 2018-03-02 | 电子科技大学 | 一种绝缘栅双极型晶体管及其制造方法 |
CN106409895A (zh) * | 2016-06-27 | 2017-02-15 | 电子科技大学 | 一种绝缘栅双极晶体管及其制造方法 |
CN106409895B (zh) * | 2016-06-27 | 2019-05-10 | 电子科技大学 | 一种绝缘栅双极晶体管及其制造方法 |
CN108899362A (zh) * | 2018-08-22 | 2018-11-27 | 江苏中科君芯科技有限公司 | 平面栅igbt器件 |
CN108899362B (zh) * | 2018-08-22 | 2024-04-12 | 江苏中科君芯科技有限公司 | 平面栅igbt器件 |
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