CN102906888B - 带有沟槽和顶部接触的发光装置 - Google Patents
带有沟槽和顶部接触的发光装置 Download PDFInfo
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- CN102906888B CN102906888B CN201180021561.4A CN201180021561A CN102906888B CN 102906888 B CN102906888 B CN 102906888B CN 201180021561 A CN201180021561 A CN 201180021561A CN 102906888 B CN102906888 B CN 102906888B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 37
- 239000004020 conductor Substances 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 144
- 229910052751 metal Inorganic materials 0.000 description 32
- 239000002184 metal Substances 0.000 description 32
- 239000000758 substrate Substances 0.000 description 19
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 229910002059 quaternary alloy Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- 241000167857 Bourreria Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910001199 N alloy Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001258 titanium gold Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/770550 | 2010-04-29 | ||
US12/770,550 US8154042B2 (en) | 2010-04-29 | 2010-04-29 | Light emitting device with trenches and a top contact |
US12/770,550 | 2010-04-29 | ||
PCT/IB2011/051417 WO2011135471A2 (en) | 2010-04-29 | 2011-04-01 | Light emitting device with trenches and a top contact |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102906888A CN102906888A (zh) | 2013-01-30 |
CN102906888B true CN102906888B (zh) | 2016-08-17 |
Family
ID=44262844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180021561.4A Active CN102906888B (zh) | 2010-04-29 | 2011-04-01 | 带有沟槽和顶部接触的发光装置 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8154042B2 (zh) |
EP (1) | EP2564436B1 (zh) |
JP (1) | JP6338371B2 (zh) |
KR (1) | KR20130064748A (zh) |
CN (1) | CN102906888B (zh) |
TW (2) | TWI616001B (zh) |
WO (1) | WO2011135471A2 (zh) |
Families Citing this family (33)
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US7573074B2 (en) | 2006-05-19 | 2009-08-11 | Bridgelux, Inc. | LED electrode |
US8716723B2 (en) | 2008-08-18 | 2014-05-06 | Tsmc Solid State Lighting Ltd. | Reflective layer between light-emitting diodes |
US9293656B2 (en) | 2012-11-02 | 2016-03-22 | Epistar Corporation | Light emitting device |
KR101007139B1 (ko) * | 2009-09-10 | 2011-01-10 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
US9287452B2 (en) | 2010-08-09 | 2016-03-15 | Micron Technology, Inc. | Solid state lighting devices with dielectric insulation and methods of manufacturing |
US10243121B2 (en) | 2011-06-24 | 2019-03-26 | Cree, Inc. | High voltage monolithic LED chip with improved reliability |
CN104040734B (zh) | 2012-01-10 | 2018-07-20 | 亮锐控股有限公司 | 通过选择性区域粗糙化控制的led光输出 |
KR101956084B1 (ko) | 2012-08-07 | 2019-03-11 | 엘지이노텍 주식회사 | 발광소자 |
TWI597863B (zh) * | 2013-10-22 | 2017-09-01 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
US9601641B1 (en) * | 2013-12-10 | 2017-03-21 | AppliCote Associates, LLC | Ultra-high pressure doping of materials |
US9768345B2 (en) * | 2013-12-20 | 2017-09-19 | Apple Inc. | LED with current injection confinement trench |
KR20150121306A (ko) * | 2014-04-18 | 2015-10-29 | 포항공과대학교 산학협력단 | 질화물 반도체 발광소자 및 이의 제조방법 |
JP6720472B2 (ja) * | 2014-06-13 | 2020-07-08 | 日亜化学工業株式会社 | 発光素子の製造方法 |
WO2016073678A1 (en) * | 2014-11-06 | 2016-05-12 | Koninklijke Philips N.V. | Light emitting device with trench beneath a top contact |
US10658546B2 (en) * | 2015-01-21 | 2020-05-19 | Cree, Inc. | High efficiency LEDs and methods of manufacturing |
WO2016165983A1 (en) * | 2015-04-15 | 2016-10-20 | Koninklijke Philips N.V. | Light emitting device with reflector and a top contact |
DE102015120323A1 (de) | 2015-11-24 | 2017-05-24 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip mit einer reflektierenden Schichtenfolge |
EP3474337A4 (en) * | 2016-06-20 | 2019-06-12 | LG Innotek Co., Ltd. | SEMICONDUCTOR DEVICE |
EP3490012B1 (en) * | 2016-07-20 | 2023-09-06 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor device |
US10340415B2 (en) | 2016-09-01 | 2019-07-02 | Lg Innotek Co., Ltd. | Semiconductor device and semiconductor device package including the same |
WO2018048275A1 (ko) | 2016-09-10 | 2018-03-15 | 엘지이노텍 주식회사 | 반도체 소자 |
US10910519B2 (en) | 2016-09-13 | 2021-02-02 | Lg Innotek Co., Ltd. | Semiconductor device having layers including aluminum and semiconductor device package including same |
US10903395B2 (en) | 2016-11-24 | 2021-01-26 | Lg Innotek Co., Ltd. | Semiconductor device having varying concentrations of aluminum |
DE102017104719A1 (de) * | 2017-03-07 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterkörper und Halbleiterchip |
KR102390828B1 (ko) | 2017-08-14 | 2022-04-26 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
CN111684611B (zh) | 2017-12-14 | 2024-02-06 | 亮锐有限责任公司 | 防止led管芯污染的方法 |
US10522708B2 (en) | 2017-12-14 | 2019-12-31 | Lumileds Llc | Method of preventing contamination of LED die |
CN108400216A (zh) * | 2018-03-16 | 2018-08-14 | 扬州乾照光电有限公司 | 一种led芯片及其制备方法 |
CN211980634U (zh) * | 2019-03-21 | 2020-11-20 | 晶元光电股份有限公司 | 发光元件及含该发光元件的封装结构和光电系统 |
KR20210052626A (ko) | 2019-10-29 | 2021-05-11 | 삼성전자주식회사 | Led 모듈 및 제조방법 |
US11476387B2 (en) | 2019-11-22 | 2022-10-18 | Tectus Corporation | Ultra-dense array of LEDs with half cavities and reflective sidewalls, and hybrid bonding methods |
US11127881B2 (en) * | 2019-11-22 | 2021-09-21 | Tectus Corporation | Ultra-dense array of LEDs with half cavities and reflective sidewalls |
CN114639763B (zh) * | 2022-05-12 | 2022-09-06 | 南昌凯捷半导体科技有限公司 | 一种具有嵌入式电极的反极性红外led及其制备方法 |
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CN1592974A (zh) * | 2000-08-08 | 2005-03-09 | 奥斯兰姆奥普托半导体有限责任公司 | 用于光电子学的半导体芯片及其制造方法 |
CN101615648A (zh) * | 2008-06-24 | 2009-12-30 | 三星电子株式会社 | 发光元件、发光器件及制造发光元件和发光器件的方法 |
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JPS61121373A (ja) | 1984-11-17 | 1986-06-09 | Oki Electric Ind Co Ltd | 面発光素子及びその製造方法 |
JP3312049B2 (ja) * | 1993-03-12 | 2002-08-05 | シャープ株式会社 | 半導体発光装置 |
JP2927158B2 (ja) | 1993-09-29 | 1999-07-28 | サンケン電気株式会社 | 半導体発光素子 |
US5789768A (en) | 1997-06-23 | 1998-08-04 | Epistar Corporation | Light emitting diode having transparent conductive oxide formed on the contact layer |
JP2002164622A (ja) * | 2000-11-22 | 2002-06-07 | Toshiba Electronic Engineering Corp | 半導体光素子 |
US6748724B1 (en) * | 2003-04-16 | 2004-06-15 | Src Innovations, Llc | Adjustable density control means for a bagging machine |
DE102004021175B4 (de) * | 2004-04-30 | 2023-06-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchips für die Optoelektronik und Verfahren zu deren Herstellung |
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JP2007103725A (ja) * | 2005-10-05 | 2007-04-19 | Toshiba Corp | 半導体発光装置 |
DE102009018603B9 (de) * | 2008-04-25 | 2021-01-14 | Samsung Electronics Co., Ltd. | Leuchtvorrichtung und Herstellungsverfahren derselben |
JP5123269B2 (ja) * | 2008-09-30 | 2013-01-23 | ソウル オプト デバイス カンパニー リミテッド | 発光素子及びその製造方法 |
-
2010
- 2010-04-29 US US12/770,550 patent/US8154042B2/en active Active
-
2011
- 2011-03-31 TW TW105114597A patent/TWI616001B/zh active
- 2011-03-31 TW TW100111433A patent/TWI546982B/zh active
- 2011-04-01 WO PCT/IB2011/051417 patent/WO2011135471A2/en active Application Filing
- 2011-04-01 CN CN201180021561.4A patent/CN102906888B/zh active Active
- 2011-04-01 EP EP11717031.6A patent/EP2564436B1/en active Active
- 2011-04-01 KR KR1020127031189A patent/KR20130064748A/ko active Search and Examination
- 2011-04-01 JP JP2013506776A patent/JP6338371B2/ja active Active
-
2012
- 2012-01-12 US US13/348,736 patent/US8415656B2/en active Active
Patent Citations (2)
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CN1592974A (zh) * | 2000-08-08 | 2005-03-09 | 奥斯兰姆奥普托半导体有限责任公司 | 用于光电子学的半导体芯片及其制造方法 |
CN101615648A (zh) * | 2008-06-24 | 2009-12-30 | 三星电子株式会社 | 发光元件、发光器件及制造发光元件和发光器件的方法 |
Also Published As
Publication number | Publication date |
---|---|
US20110266568A1 (en) | 2011-11-03 |
US8154042B2 (en) | 2012-04-10 |
WO2011135471A3 (en) | 2012-03-22 |
JP6338371B2 (ja) | 2018-06-06 |
TW201631807A (zh) | 2016-09-01 |
TW201208122A (en) | 2012-02-16 |
KR20130064748A (ko) | 2013-06-18 |
TWI616001B (zh) | 2018-02-21 |
JP2013526051A (ja) | 2013-06-20 |
US8415656B2 (en) | 2013-04-09 |
US20120112161A1 (en) | 2012-05-10 |
TWI546982B (zh) | 2016-08-21 |
EP2564436A2 (en) | 2013-03-06 |
EP2564436B1 (en) | 2019-06-12 |
WO2011135471A2 (en) | 2011-11-03 |
CN102906888A (zh) | 2013-01-30 |
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Address after: Eindhoven, Netherlands Co-patentee after: LUMILEDS LLC Patentee after: KONINKLIJKE PHILIPS N.V. Address before: Eindhoven, Netherlands Co-patentee before: Philips Ramildes Lighting Equipment Co.,Ltd. Patentee before: KONINKLIJKE PHILIPS ELECTRONICS N.V. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200828 Address after: Holland Schiphol Patentee after: KONINKLIJKE PHILIPS NV Address before: Eindhoven, Netherlands Co-patentee before: LUMILEDS LLC Patentee before: KONINKLIJKE PHILIPS N.V. |