CN102885632B - 放射线检测装置和包括该放射线检测装置的检测系统 - Google Patents

放射线检测装置和包括该放射线检测装置的检测系统 Download PDF

Info

Publication number
CN102885632B
CN102885632B CN201210250693.0A CN201210250693A CN102885632B CN 102885632 B CN102885632 B CN 102885632B CN 201210250693 A CN201210250693 A CN 201210250693A CN 102885632 B CN102885632 B CN 102885632B
Authority
CN
China
Prior art keywords
film transistor
thin film
circuit
unit
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210250693.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN102885632A (zh
Inventor
大藤将人
望月千织
渡边实
横山启吾
川锅润
藤吉健太郎
和山弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN102885632A publication Critical patent/CN102885632A/zh
Application granted granted Critical
Publication of CN102885632B publication Critical patent/CN102885632B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/779—Circuitry for scanning or addressing the pixel array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201210250693.0A 2011-07-20 2012-07-19 放射线检测装置和包括该放射线检测装置的检测系统 Active CN102885632B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-159011 2011-07-20
JP2011159011A JP5847472B2 (ja) 2011-07-20 2011-07-20 検出装置及び検出システム

Publications (2)

Publication Number Publication Date
CN102885632A CN102885632A (zh) 2013-01-23
CN102885632B true CN102885632B (zh) 2014-09-24

Family

ID=46980707

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210250693.0A Active CN102885632B (zh) 2011-07-20 2012-07-19 放射线检测装置和包括该放射线检测装置的检测系统

Country Status (4)

Country Link
US (1) US8680478B2 (https=)
EP (1) EP2549299B1 (https=)
JP (1) JP5847472B2 (https=)
CN (1) CN102885632B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014192320A (ja) * 2013-03-27 2014-10-06 Sony Corp 撮像装置および撮像表示システム
FR3013546B1 (fr) * 2013-11-15 2017-05-19 Trixell Mise en commun de deux colonnes de pixels d'un detecteur d'images
JP6339853B2 (ja) * 2014-05-01 2018-06-06 キヤノン株式会社 放射線撮像装置および放射線撮像システム
KR102509203B1 (ko) * 2014-08-29 2023-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
US10163948B2 (en) * 2015-07-23 2018-12-25 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US10356027B2 (en) * 2016-10-03 2019-07-16 HYP3R Inc Location resolution of social media posts
US10527728B2 (en) * 2017-01-27 2020-01-07 Samsung Electronics Co., Ltd Apparatus and method for range measurement
KR102462071B1 (ko) * 2017-12-27 2022-11-01 엘지디스플레이 주식회사 시프트 레지스터, 게이트 구동 회로, 엑스선 탐지 패널 및 엑스선 탐지 장치
JP7088686B2 (ja) * 2018-02-15 2022-06-21 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イメージセンサ及びイメージセンサの駆動方法
CN110853591A (zh) * 2019-11-11 2020-02-28 福建华佳彩有限公司 一种gip驱动电路及其控制方法
JP7596386B2 (ja) * 2020-08-03 2024-12-09 株式会社半導体エネルギー研究所 半導体装置、及び電子機器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0474238A2 (en) * 1990-09-05 1992-03-11 Nec Corporation Semiconductor memory circuit
CN1276535A (zh) * 1999-06-07 2000-12-13 株式会社东芝 射线探测器
CN101311785A (zh) * 2007-05-21 2008-11-26 爱普生映像元器件有限公司 电光装置、电光装置的驱动电路以及电子设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6449381A (en) * 1987-08-20 1989-02-23 Fuji Photo Film Co Ltd Solid-state image pickup device
JPH09163244A (ja) * 1995-12-05 1997-06-20 Olympus Optical Co Ltd 固体撮像装置
JP2001273785A (ja) * 2000-03-29 2001-10-05 Casio Comput Co Ltd シフトレジスタ及び電子装置
JP4991459B2 (ja) * 2007-09-07 2012-08-01 キヤノン株式会社 撮像装置及び放射線撮像システム
JP5188221B2 (ja) * 2008-03-14 2013-04-24 キヤノン株式会社 固体撮像装置
JP5392533B2 (ja) * 2008-10-10 2014-01-22 ソニー株式会社 固体撮像素子、光学装置、信号処理装置及び信号処理システム
JP5248396B2 (ja) * 2009-04-01 2013-07-31 浜松ホトニクス株式会社 固体撮像素子及びその製造方法、放射線撮像装置及びその製造方法、並びに固体撮像素子の検査方法
JP2011015158A (ja) * 2009-07-01 2011-01-20 Toshiba Corp 固体撮像装置
JP5436121B2 (ja) * 2009-09-28 2014-03-05 キヤノン株式会社 撮像装置および放射線撮像システム
US8054935B2 (en) * 2009-11-13 2011-11-08 Au Optronics Corporation Shift register with low power consumption

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0474238A2 (en) * 1990-09-05 1992-03-11 Nec Corporation Semiconductor memory circuit
CN1276535A (zh) * 1999-06-07 2000-12-13 株式会社东芝 射线探测器
CN101311785A (zh) * 2007-05-21 2008-11-26 爱普生映像元器件有限公司 电光装置、电光装置的驱动电路以及电子设备

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
15.2: 2.0 inch a-Si:H TFT-LCD with Low Noise Integrated Gate Driver;Jae Hwan Oh et.al.;《SID 05 DIGEST》;20051231;942-945 *
Jae Hwan Oh et.al..15.2: 2.0 inch a-Si:H TFT-LCD with Low Noise Integrated Gate Driver.《SID 05 DIGEST》.2005,942-945.
JP昭64-49381A 1989.02.23

Also Published As

Publication number Publication date
CN102885632A (zh) 2013-01-23
EP2549299A2 (en) 2013-01-23
US20130020494A1 (en) 2013-01-24
JP2013026780A (ja) 2013-02-04
EP2549299B1 (en) 2019-10-30
JP5847472B2 (ja) 2016-01-20
US8680478B2 (en) 2014-03-25
EP2549299A3 (en) 2015-04-01

Similar Documents

Publication Publication Date Title
CN102885632B (zh) 放射线检测装置和包括该放射线检测装置的检测系统
JP5963551B2 (ja) アクティブマトリクスパネル、検出装置、及び、検出システム
CN102569318B (zh) 矩阵衬底、检测设备、检测系统和驱动检测设备的方法
US9396813B2 (en) Shift register cell, shift register, gate driver and display panel
CN105282462B (zh) 图像传感器及其驱动方法
US20130342514A1 (en) Detection apparatus, detection system, and detection apparatus drive method
JP4686972B2 (ja) シフトレジスタ回路、基本回路および表示装置
US20130100327A1 (en) Image pickup unit and image pickup display system
JP6555609B2 (ja) イメージセンサ
CN103650477B (zh) 用于对有源检测矩阵的控制电路的线寻址的设备
CN103067668B (zh) 图像拍摄单元和图像拍摄显示系统
JP5429815B2 (ja) シフトレジスタ回路
CN114615445A (zh) 一种光电晶体管及其感光方法
CN103219349B (zh) 矩阵基板、检测装置和检测系统
JP6138319B2 (ja) 検出装置、及び、検出システム
US20130075621A1 (en) Radiation detection apparatus and detection system including same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant